2N7002W_07 [PANJIT]
60V N-Channel Enhancement Mode MOSFET; 60V N沟道增强型MOSFET
| 型号： | 2N7002W_07 |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | 60V N-Channel Enhancement Mode MOSFET |
| 文件： | 总5页 (文件大小：162K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N7002W
60V N-Channel Enhancement Mode MOSFET
FEATURES
• RDS(ON), VGS@10V,IDS@500mA=5Ω
• RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• In compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
• Case: SOT-323 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : 72W
Drain
Gate
Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PARAMETER
Symbol
VD S
Limit
60
Units
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
VG S
ID
+20
115
800
V
mA
1 )
Pulsed Drain Current
ID M
mA
TA =25O
TA =75O
C
C
200
120
Maximum Power Dissipation
PD
mW
O C
Operating Junction and Storage Temperature Range
Junction-to Ambient Thermal Resistance(PCB mounted)2
TJ ,TS T G
Rθ J A
-55 to + 150
625
O C/W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-JUL.26.2007
PAGE . 1
2N7002W
ELECTRICALCHARACTERISTICS
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Units
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate Body Leakage
BVD S S
VG S ( t h )
RD S ( o n )
RD S ( o n )
ID S S
VG S =0V, ID =10uA
VD S =VG S , ID =250uA
VGS =4.5V, I D =75mA
VGS =10V, I D =500mA
VD S =60V, VGS =0V
60
-
-
-
-
-
-
-
-
2.5
7.5
5
V
V
1
-
Ω
-
-
-
1
uA
nA
IG S S
VG S =+20V, VD S =0V
VD S =15V, ID =250mA
+100
-
Forward Transconductance
Dynamic
gf S
200
mS
Total Gate Charge
Qg
Qg s
Qg d
to n
-
-
-
-
-
-
-
-
0.6
0.7
-
VD S =15V, ID =500mA
Gate-Source Charge
0.1
nC
ns
V
GS =4.5V
Gate-Drain Charge
0.08
-
Turn-On Delay Time
9
21
-
15
26
50
25
5
VD D =10V , RL=20Ω
ID =500mA , VGE N=10V
RG=10Ω
Turn-Off Delay Time
to f f
Input Capacitance
Ci s s
Co s s
Cr s s
VD S =25V, VG S =0V
f=1.0MHZ
Output Capacitance
-
pF
Reverse Transfer Capacitance
Source-Drain Diode
-
Max. Diode Forward Current
Diode Forward Voltage
Is
-
-
-
-
250
1.2
mA
V
VS D
IS=250mA , VG S =0V
0.93
V
DD
VDD
Switching
Test Circuit
Gate Charge
Test Circuit
RL
RL
V
IN
VGS
V
OUT
1mA
RG
RG
STAD-JUL.26.2007
PAGE . 2
2N7002W
Typical Characteristics Curves (TA=25OC,unless otherwise noted)
1.2
1
1.2
V
DS=10V
V
GS= 10V ~ 6.0V
5.0V
1
0.8
0.6
0.4
0.2
0
4.0V
0.8
0.6
0.4
0.2
0
T
J
=25OC
3.0V
0
1
2
3
4
5
0
1
2
3
4
5
6
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
FIG.1-OutputCharacteristic
FIG.2- Transfer Characteristic
10
8
5
4
3
ID=500mA
6
V
V
GS=4.5V
GS=10V
TJ
=125OC
2
1
0
4
2
T
J
=25OC
0
2
3
4
5
6
7
8
9
10
0
0.2
0.4
0.6
0.8
1
1.2
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
FIG.3- On Resistance vs Drain Current
FIG.4- On Resistance vs Gate to Source Voltage
2
V
GS=10V
1.8
1.6
1.4
1.2
1
ID=500mA
0.8
0.6
0.4
-50 -25
0
25
50
75 100 125 150
TJ - Junction Temperature (oC)
FIG.5- On Resistance vs Junction Temperature
STAD-JUL.26.2007
PAGE . 3
2N7002W
10
8
V
DS=15V
Vgs
I
D
=500mA
Qg
6
4
2
Qsw
Vgs(th)
0
0
0.2
0.4
0.6
0.8
1
Qg(th)
Qgs
Qgd
Qg
Qg - Gate Charge (nC)
Fig.6 - Gate Charge Waveform
Fig.7 - Gate Charge
1.2
73
ID=250uA
ID=250uA
72
71
70
69
68
67
66
65
64
1.1
1
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ - Junction Temperature (oC)
TJ - Junction Temperature (oC)
Fig.8 - Threshold Voltage vs Temperature
Fig.9 - Breakdown Voltage vs Junction Temperature
10
V
GS=0V
1
0.1
TJ
=25OC
TJ
=125OC
TJ
=-55OC
0.01
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD - Source-to-Drain Voltage (V)
Fig.10 - Source-Drain Diode Forward Voltage
STAD-JUL.26.2007
PAGE . 4
2N7002W
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2007
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
STAD-JUL.26.2007
PAGE . 5
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