2N7002W [TYSEMI]
Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance; 低导通电阻低栅极阈值电压低输入电容型号: | 2N7002W |
厂家: | TY Semiconductor Co., Ltd |
描述: | Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance |
文件: | 总1页 (文件大小:182K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TransistIoCrs
MOSFET
Product specification
2N7002W
SOT-323
■ Features
● Low On-Resistance
Unit:mm
1.3±0.1
0.65
● Low Gate Threshold Voltage
● Low Input Capacitance
1
2
● Fast Switching Speed
3
● Low Input/Output Leakage
● Ultra-Small Surface Mount Package
+0.05
0.1
0.3±0.1
2.1±0.1
-0.02
1. Gate
2. Source
3. Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source voltage
Symbol
VDS
Rating
60
Unit
V
Gate-Source Voltage
VGS
V
±20
Drain Current - Continuous
- Pulsed Note(1)
115
ID
mA
800
Power dissipation
@ TA = 25℃
PD
0.2
W
Operating and storage junction temperature range
TJ, Tstg
-55 to +150
℃
Notes: 1. Pulse width limited by maximum junction temperature.
■ Electrical Characteristics Ta = 25℃
Test conditons
Parameter
Symbol
V(BR)DSS
VGS(th)
lGSS
Min
60
1
Typ Max
Unit
V
Drain-source breakdown voltage
Gate-threshold voltage
Gate-body leakage
VGS=0 V, ID=10μA
VDS=VGS, ID=250μA
VDS=0 V, VGS=±20 V
1.76
2
±10
1
nA
μA
A
Zero gate voltage drain current
On-state drain current
IDSS
VDS=60 V, VGS=0 V
500
TC = 125℃
VGS=10 V, VDS=7.5 V
ID(ON)
0.5
80
VGS=10 V, ID=500 mA @Tj = 125℃
VGS=5 V, ID=50 mA
13.5
7.5
Drain-source on-resistance
RDS(on)
Ω
VDS=10 V, ID=200 mA
Forward tran conductance
Input capacitance
gts
ms
Ciss
22
11
2
50
25
7
VDS=25 V, VGS=0 V, f=1 MHz
pF
Output capacitance
Reverse transfer capacitance
Turn-on Time
Coss
Crss
td(on)
td(off)
VDD = 30 V, RL = 150 Ω
7.0
11
20
20
ns
ns
ID =0.2 A, VGEN = 10 V, RG = 25Ω
Turn-off Time
■ Marking
Marking
702
http://www.twtysemi.com
sales@twtysemi.com
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4008-318-123
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