EIA1414-6 [EXCELICS]
14.00-14.50 GHz 6-Watt Internally Matched Power FET; 14.00-14.50 GHz的6瓦内部匹配功率场效应管
| 型号： | EIA1414-6 |
| 厂家： | 
EXCELICS SEMICONDUCTOR, INC. |
| 描述： | 14.00-14.50 GHz 6-Watt Internally Matched Power FET |
| 文件： | 总1页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EIA1414-6
UPDATED 12/5/2005
14.00-14.50 GHz 6-Watt Internally Matched Power FET
.060 MIN.
.060 MIN.
Excelics
FEATURES
EIA1414-6
•
•
•
•
•
•
14.00– 14.50GHz Bandwidth
.650±.008 .512
.319
GATE
DRAIN
Input/Output Impedance Matched to 50 Ohms
+37.5 dBm Output Power at 1dB Compression
8.0 dB Power Gain at 1dB Compression
33% Power Added Efficiency
.022
YM
SN
.045
.094
.382
Hermetic Metal Flange Package
.004
.070 ±.008
.129
ALL DIMENSIONS IN INCHES
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
P1dB
PARAMETERS/TEST CONDITIONS1
MIN
TYP
MAX
UNITS
Output Power at 1dB Compression
DS = 8 V, IDSQ ≈ 1600mA
f = 14.00-14.50GHz
36.5
37.5
dBm
V
Gain at 1dB Compression
VDS = 8 V, IDSQ ≈ 1600mA
Gain Flatness
f = 14.00-14.50GHz
f = 14.00-14.50GHz
7.0
8.0
dB
dB
%
G1dB
∆G
±0.6
VDS = 8 V, IDSQ ≈ 1600mA
Power Added Efficiency at 1dB Compression
VDS = 8 V, IDSQ ≈ 1600mA
33
PAE
f = 14.00-14.50GHz
f = 14.00-14.50GHz
Drain Current at 1dB Compression
1800
2800
-1.0
4.5
2100
3500
-2.5
5.0
mA
mA
V
Id1dB
IDSS
VP
Saturated Drain Current
VDS = 3 V, VGS = 0 V
VDS = 3 V, IDS = 28mA
Pinch-off Voltage
Thermal Resistance3
oC/W
RTH
Note: 1) Tested with 100 Ohm gate resistor.
2) S.C.L. = Single Carrier Level.
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS
Vds
Vgs
Ids
PARAMETERS
ABSOLUTE1
12
CONTINUOUS2
Drain-Source Voltage
Gate-Source Voltage
Drain Current
8V
-3V
-5
IDSS
3.5A
Forward Gate Current
Reserve Gate Current
Input Power
43.2mA
-7.2mA
36.5dBm
175 oC
-65 to +175 oC
30W
14.4mA
Igsf
-2.4mA
Igsr
Pin
@ 3dB Compression
175 oC
Channel Temperature
Storage Temperature
Total Power Dissipation
Tch
-65 to +175 oC
Tstg
Pt
30W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 1
Revised December 2005
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