首页 |元器件品牌

EIA1415B-8P [EXCELICS]

14.9-15.1GHz, 8W Internally Matched Power FET; 14.9-15.1GHz ， 8W内部匹配功率场效应管
EIA1415B-8P
型号： EIA1415B-8P
厂家： EXCELICS SEMICONDUCTOR, INC.    EXCELICS SEMICONDUCTOR, INC.
描述：

14.9-15.1GHz, 8W Internally Matched Power FET
14.9-15.1GHz ， 8W内部匹配功率场效应管
文件： 总1页 (文件大小：46K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
Excelics  
EIA1415B-8P  
Not recommended for new designs. Contact factory. Effective 03/2003  
14.9-15.1GHz, 8W Internally Matched Power FET  
·
14.9-15.1GHz BANDWIDTH AND INPUT/OUTPUT  
IMPEDANCE MATCHED TO 50 OHM  
HIGH PAE( 20% TYPICAL)  
+39dBm TYPICAL P1dB OUTPUT POWER  
6dB TYPICAL G1dB POWER GAIN  
·
·
·
·
NON-HERMETIC METAL FLANGE PACKAGE  
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)  
EIA1415B-8P  
SYMBOLS  
PARAMETERS/TEST CONDITIONS  
UNIT  
dBm  
dB  
MIN  
TYP  
MAX  
Output Power at 1dB Compression f=14.9-15.1GHz  
Vds=8V, Idsq=0.5 Idss  
38  
39  
P1dB  
G1dB  
PAE  
Id1dB  
IP3  
Gain at 1dB Compression  
Vds=8V, Idsq=0.5 Idss  
f=14.9-15.1GHz  
5.5  
6.5  
20  
Power Added Efficiency at 1dB compression  
f=14.9-15.1GHz Vds=8V, Idsq=0.5 Idss  
%
Drain Current at 1dB Compression  
3520  
mA  
Output 3rd Order Intercept Point  
Vds=8V, Idsq=0.5 Idss  
f=14.9-15.1GHz  
dBm  
Saturated Drain Current Vds=3V, Vgs=0V  
4400  
-13  
5760  
6000  
-1.0  
-15  
6800  
-2.5  
mA  
mS  
V
Idss  
Transconductance  
Pinch-off Voltage  
Vds=3V, Vgs=0V  
Gm  
Vds=3V, Ids=48mA  
Vp  
Drain Breakdown Voltage Igd=19.2mA  
V
BVgd  
Rth  
Thermal Resistance (Au-Sn Eutectic Attach)  
2.3  
oC/W  
MAXIMUM RATINGS AT 25OC  
SYMBOLS  
PARAMETERS  
ABSOLUTE1  
CONTINUOUS2  
Vds  
Vgs  
Ids  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current  
12V  
-8V  
8V  
-3V  
Idss  
6240mA  
Igsf  
Pin  
Tch  
Tstg  
Pt  
Forward Gate Current  
Input Power  
720mA  
38dBm  
175oC  
-65/175oC  
60W  
120mA  
@ 3dB Compression  
150oC  
-65/150oC  
Channel Temperature  
Storage Temperature  
Total Power Dissipation  
50W  
Note: 1. Exceeding any of the above ratings may result in permanent damage.  
2. Exceeding any of the above ratings may reduce MTTF below design goals.  
Excelics Semiconductor, Inc., 310 De Guine Drive, Sunnyvale, CA 94085  
Phone: (408) 737-1711 Fax: (408) 737-1868 Web Site: www.excelics.com  

相关型号：

EIA1616-4P

 16.2-16.4GHz, 4W Internally Matched Power FET
EXCELICS

EIA1616-8P

 16.2-16.4GHz, 8W Internally Matched Power FET
EXCELICS

EIA1616-8P-2

 16.2-16.4GHz 8-Watt Internally Matched Power FET
EXCELICS

EIA1718-1P

 17.7-18.7GHz, 1W Internally Matched Power FET
EXCELICS

EIA1718-2P

 17.7-18.7GHz, Internally Matched Power FET
EXCELICS

EIA1718A-1P

 17.3-18.1GHz, 1W Internally Matched Power FET
EXCELICS

EIA1718A-2P

 17.3-18.1GHz, 2W Internally Matched Power FET
EXCELICS

EIA1818-1P

 18.15-18.75GHz, 1W Internally Matched Power FET
EXCELICS

EIA1818-2P

 18.15-18.75GHz, 2W Internally Matched Power FET
EXCELICS

EIA1819-1P

 18.7-19.7GHz, 1W Internally Matched Power FET
EXCELICS

EIA1819-2P

 18.7-19.7GHz, 2W Internally Matched Power FET
EXCELICS

EIA4025NPAP

 Proximity Sensors Inductive Thermoplastic Polyester Housing
ETC
©2020 ICPDF网 联系我们和版权申明