EIA1616-8P-2 [EXCELICS]
16.2-16.4GHz 8-Watt Internally Matched Power FET; 16.2-16.4GHz 8瓦内部匹配功率场效应管
| 型号： | EIA1616-8P-2 |
| 厂家： | 
EXCELICS SEMICONDUCTOR, INC. |
| 描述： | 16.2-16.4GHz 8-Watt Internally Matched Power FET |
| 文件： | 总2页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EIA1616-8P-2
UPDATED 11/09/06
16.2-16.4GHz 8-Watt Internally Matched Power FET
FEATURES
•
•
•
•
•
•
•
16.2– 16.4GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+39.0 dBm Output Power at 1dB Compression
6.0 dB Min. Power Gain at 1dB Compression
30% Power Added Efficiency
EIA1616-8P-2
Non-Hermetic Metal Flange Package
100% Tested for DC, RF, and RTH
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB
PARAMETERS/TEST CONDITIONS1
MIN
TYP
MAX
UNITS
Output Power at 1dB Compression
VDS = 8 V, IDSQ ≈ 2200mA
Gain at 1dB Compression
DS = 8 V, IDSQ ≈ 2200mA
f = 16.2-16.4GHz
f = 16.2-16.4GHz
f = 16.2-16.4GHz
38.0
39.0
dBm
6.0
7.0
dB
dB
%
G1dB
∆G
V
Gain Flatness
±0.6
VDS = 8 V, IDSQ ≈ 2200mA
Power Added Efficiency at 1dB Compression
30
PAE
V
DS = 8 V, IDSQ ≈ 2200mA
f = 16.2-16.4GHz
Drain Current at 1dB Compression
f = 16.2-16.4GHz
2600
4000
-1.0
3.5
3200
6000
-2.5
4.0
mA
mA
V
Id1dB
IDSS
VP
Saturated Drain Current
Pinch-off Voltage
VDS = 3 V, VGS = 0 V
VDS = 3 V, IDS = 40 mA
Thermal Resistance2
oC/W
RTH
Note:
1. Tested with 100 Ohm gate resistor.
2. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS
Vds
Vgs
Igf
PARAMETERS
Drain-Source Voltage
ABSOLUTE1
CONTINUOUS2
8V
-3V
10V
-5V
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
86.4mA
-14.4mA
38 dBm
175 oC
28.8mA
-4.8mA
Igr
@ 3dB Compression
175 oC
Pin
Channel Temperature
Storage Temperature
Total Power Dissipation
Tch
Tstg
Pt
-65 to +175 oC
-65 to +175 oC
38W
38W
Notes:
1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2.
Bias conditions must also satisfy the following equation PT < (TCH –TPKG)/RTH; where TPKG = temperature of package,
and PT = (VDS * IDS) – (POUT – PIN).
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised November 2006
EIA1616-8P-2
UPDATED 11/09/06
DISCLAIMER
16.2-16.4GHz 8-Watt Internally Matched Power FET
EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN.
LIFE SUPPORT POLICY
EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE
SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR,
INC. AS HERE IN:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for
use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be
reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 2
Revised November 2006
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