EIA1415-5 [EXCELICS]
14.40-15.35GHz 5-Watt Internally Matched Power FET; 14.40-15.35GHz 5瓦内部匹配功率场效应管
| 型号： | EIA1415-5 |
| 厂家： | 
EXCELICS SEMICONDUCTOR, INC. |
| 描述： | 14.40-15.35GHz 5-Watt Internally Matched Power FET |
| 文件： | 总2页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EIA1415-5
UPDATED 11/17/2006
14.40-15.35GHz 5-Watt Internally Matched Power FET
.060 MIN.
.060 MIN.
Excelics
FEATURES
EIA1415-5
.650±.008 .512
.319
•
•
•
•
•
•
•
14.40– 15.35GHz Bandwidth
GATE
DRAIN
.022
Input/Output Impedance Matched to 50 Ohms
+36.5 dBm Output Power at 1dB Compression
7.0 dB Power Gain at 1dB Compression
33% Power Added Efficiency
Hermetic Metal Flange Package
100% Tested for DC, RF, and RTH
YYWW
SN
.045
.094
.382
.004
.070 ±.008
.129
ALL DIMENSIONS IN INCHES
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
P1dB
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f =14.40-5.35GHz
MIN
TYP
MAX
UNITS
35.5
36.5
dBm
VDS = 8 V, IDSQ ≈ 1400mA
Gain at 1dB Compression
DS = 8 V, IDSQ ≈ 1400mA
Gain Flatness
DS = 8 V, IDSQ ≈ 1400mA
Power Added Efficiency at 1dB Compression
f =14.40-15.35GHz
G1dB
∆G
6.0
7.0
dB
dB
%
V
f =14.40-15.35GHz
±0.6
V
PAE
33
VDS = 8 V, IDSQ ≈ 1400mA
f =14.40-15.35GHz
Id1dB
IDSS
VP
Drain Current at 1dB Compression f =14.40-15.35GHz
1700
2880
-1.0
5.5
2000
3600
-2.5
6.0
mA
mA
V
Saturated Drain Current
VDS = 3 V, VGS = 0 V
DS = 3 V, IDS = 29 mA
Pinch-off Voltage
V
RTH
Thermal Resistance2
oC/W
Note: 1) Tested with 100 Ohm gate resistor.
2) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
ABSOLUTE1
CONTINUOUS2
8V
VDS
10
-5
VGS
-3V
Igf
Forward Gate Current
Reverse Gate Current
Input Power
43.2mA
-7.2mA
35.5dBm
175 oC
14.4mA
-2.4mA
Igr
Pin
@ 3dB Compression
175 oC
Tch
Tstg
Pt
Channel Temperature
Storage Temperature
Total Power Dissipation
-65 to +175 oC
-65 to +175 oC
25W
25W
Note: 1) Exceeding any of the above ratings may result in permanent damage.
2) Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised November 2006
EIA1415-5
UPDATED 11/17/2006
DISCLAIMER
14.40-15.35GHz 5-Watt Internally Matched Power FET
EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN.
LIFE SUPPORT POLICY
EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE
SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR,
INC. AS HERE IN:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for
use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be
reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 2
Revised November 2006
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