EIA1314A-4P [EXCELICS]
13.0-14.5GHz, 4W Internally Matched Power FET; 13.0-14.5GHz , 4W内部匹配功率场效应管型号: | EIA1314A-4P |
厂家: | EXCELICS SEMICONDUCTOR, INC. |
描述: | 13.0-14.5GHz, 4W Internally Matched Power FET |
文件: | 总1页 (文件大小:46K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Excelics
EIA1314A-4P
Not recommended for new designs. Contact factory. Effective 03/2003
13.0-14.5GHz, 4W Internally Matched Power FET
·
13.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT
IMPEDANCE MATCHED TO 50 OHM
·
·
·
·
FEATURES HIGH PAE (27% TYPICAL)
+36.0dBm TYPICAL P1dB OUTPUT POWER
8.5dB TYPICAL G1dB POWER GAIN
NON-HERMETIC METAL FLANGE PACKAGE
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
EIA1314A-4P
SYMBOLS
PARAMETERS/TEST CONDITIONS
UNIT
dBm
dB
MIN
TYP
MAX
Output Power at 1dB Compression f=13.0-14.5GHz
Vds=8V, Idsq=0.5 Idss
35.0
36.0
P1dB
G1dB
PAE
Gain at 1dB Compression
Vds=8V, Idsq=0.5 Idss
f=13.0-14.5GHz
7.5
8.5
27
Power Added Efficiency at 1dB compression
f=13.0-14.5GHz
Vds=8V, Idsq=0.5 Idss
%
Drain Current at 1dB Compression
1760
43
mA
Id1dB
IP3
Output 3rd Order Intercept Point
Vds=8V, Idsq=0.5 Idss
f=13.0-14.5GHz
dBm
Saturated Drain Current Vds=3V, Vgs=0V
2200
-13
2880
3000
-1.0
-15
3400
-2.5
mA
mS
V
Idss
Gm
Transconductance
Pinch-off Voltage
Vds=3V, Vgs=0V
Vds=3V, Ids=24mA
Vp
Drain Breakdown Voltage Igd=9.6mA
V
BVgd
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
4.5
oC/W
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds
Vgs
Ids
Drain-Source Voltage
Gate-Source Voltage
Drain Current
12V
-8V
8V
-3V
Idss
3120mA
60mA
Igsf
Pin
Tch
Tstg
Pt
Forward Gate Current
Input Power
360mA
35dBm
175oC
-65/175oC
30W
@ 3dB Compression
150oC
-65/150oC
Channel Temperature
Storage Temperature
Total Power Dissipation
25W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 310 De Guine Drive, Sunnyvale, CA 94085
Phone: (408) 737-1711 Fax: (408) 737-1868 Web Site: www.excelics.com
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