EIA1114-4 [EXCELICS]
11.0-14.0GHz 4-Watt Internally Matched Power FET; 11.0-14.0GHz 4瓦内部匹配功率场效应管
| 型号： | EIA1114-4 |
| 厂家： | 
EXCELICS SEMICONDUCTOR, INC. |
| 描述： | 11.0-14.0GHz 4-Watt Internally Matched Power FET |
| 文件： | 总1页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EIA1114-4
UPDATED 07/25/2006
11.0-14.0GHz 4-Watt Internally Matched Power FET
.060 MIN.
.060 MIN.
Excelics
FEATURES
EIA1114-4
.650±.008 .512
.319
•
•
•
•
•
•
•
•
11.0– 14.0GHz Bandwidth
GATE
DRAIN
.022
Input/Output Impedance Matched to 50 Ohms
+36.5 dBm Output Power at 1dB Compression
7.0 dB Power Gain at 1dB Compression
25% Power Added Efficiency
-36 dBc IM3 at Po = 25.5 dBm SCL
Hermetic Metal Flange Package
YYWW
SN
.045
.094
.382
.004
.070 ±.008
100% Tested for DC, RF, and RTH
.129
ALL DIMENSIONS IN INCHES
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB
PARAMETERS/TEST CONDITIONS1
MIN
TYP
MAX
UNITS
Output Power at 1dB Compression
DS = 8 V, IDSQ ≈ 1500mA
f = 11.0-14.0GHz
35.5
36.5
dBm
V
Gain at 1dB Compression
VDS = 8 V, IDSQ ≈ 1500mA
Gain Flatness
f = 11.0-14.0GHz
f = 11.0-14.0GHz
6.0
7.0
dB
dB
G1dB
±0.8
∆G
VDS = 8 V, IDSQ ≈ 1500mA
Power Added Efficiency at 1dB Compression
25
%
PAE
Id1dB
VDS = 8 V, IDSQ ≈ 1500mA
f = 11.0-14.0GHz
f = 11.0-14.0GHz
Drain Current at 1dB Compression
1700
2000
mA
Output 3rd Order Intermodulation Distortion
∆f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L2
-36
dBc
IM3
VDS = 8 V, IDSQ ≈ 65% IDSS
f = 14.0GHz
Saturated Drain Current
VDS = 3 V, VGS = 0 V
2880
-1.0
5.5
3600
-2.5
6.0
mA
V
oC/W
IDSS
VP
Pinch-off Voltage
Thermal Resistance3
VDS = 3 V, IDS = 29 mA
RTH
Note: 1) Tested with 100 Ohm gate resistor.
2) S.C.L. = Single Carrier Level.
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS
PARAMETERS
Drain-Source Voltage
ABSOLUTE1
CONTINUOUS2
8V
-3V
10
-5
Vds
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
Vgs
43.2mA
-7.2mA
35.5dBm
175 oC
14.4mA
Igsf
-2.4mA
Igsr
@ 3dB Compression
175 oC
Pin
Channel Temperature
Storage Temperature
Total Power Dissipation
Tch
-65 to +175 oC
-65 to +175 oC
Tstg
Pt
25W
25W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 1
Revised July 2006
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