TSL265 [ETC]
Optoelectronic ; 光电\n
ETC 
TSL265
HIGHĆSENSITIVITY NEARĆINFRARED
t
LIGHTĆTOĆVOLTAGE CONVERTER
TAOS016 – SEPTEMBER 1999
t
PACKAGE
(TOP VIEW)
D High Sensitivity
D Rail-to-Rail Output
D Single Voltage Supply Operation
D Monolithic Silicon IC Containing
Photodiode, Operational Amplifier, and
Feedback Components
1
2
3
D Converts NIR Light Intensity to Output
Voltage
D Compact 3-Leaded Infrared-Transmissive
Plastic Package
D Wide Supply-Voltage Range
D Low Supply Current
GND VDD OUT
Description
The TSL265 is a high-sensitivity light-to-voltage optical converter that combines a photodiode and a
transimpedance amplifier on a single monolithic CMOS integrated circuit. Output voltage is directly proportional
to near infrared (NIR) light intensity (irradiance) on the photodiode. The TSL265 has a transimpedance gain of
3.2 GΩ. Bandwidth and signal-to-noise ratio are optimized by means of a patented design that minimizes the
effects of photodiode capacitance. It uses design techniques that provide improved offset voltage stability and
low power consumption, and is supplied in a 3-lead visible-light-blocking sidelooker package with an integral
lens.
The TSL265 is intended for NIR light-sensing applications requiring ultrahigh sensitivity where a linear voltage
output is desired.
Functional Block Diagram
–
Voltage
Output
+
Terminal Functions
TERMINAL
DESCRIPTION
NAME
GND
NO.
1
Ground (substrate). All voltages are referenced to GND.
OUT
3
Output voltage
Supply voltage
V
2
DD
Copyright 2000, TAOS Inc.
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t
Texas Advanced Optoelectronic Solutions Inc.
800 Jupiter Road, Suite 205 S Plano, TX 75074 S (972) 673-0759
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TSL265
HIGHĆSENSITIVITY NEARĆINFRARED
LIGHTĆTOĆVOLTAGE CONVERTER
TAOS016 – SEPTEMBER 1999
Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)†
Supply voltage, V (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
DD
Output current, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10 mA
O
Duration of short-circuit current at (or below) 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 s
Operating free-air temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25°C to 85°C
A
Storage temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25°C to 85°C
stg
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltages are with respect to GND.
Recommended Operating Conditions
MIN
2.7
0
MAX
6
UNIT
V
Supply voltage, V
DD
Operating free-air temperature, T
70
°C
A
Electrical Characteristics at VDD = 5 V, TA = 25°C, λp = 880 nm, RL = 10 kΩ (unless otherwise noted)
(see Notes 2 and 3)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
Dark voltage
E = 0
e
100
mV
D
V
V
= 4.5 V,
= 4.5 V,
,R = 0,
4.49
4.2
2
DD
DD
L
V
V
Maximum output voltage swing
Output voltage
V
OM
R = 10 kΩ
L
4
2
E = 156 mW/cm
1.6
2.4
4.5
V
O
e
α
Temperature coefficient of output voltage (V )
T = 0°C to 70°C, See Note 2
A
TBD
12.8
32
%/°C
vo
O
2
N
Irradiance responsivity
Power supply rejection
V/(µW/cm )
e
f
f
= 100 Hz,
= 1 kHz,
1.3 V
1.3 V
dB
dB
ac
ac
O(pp)
O(pp)
19
I
Supply current
2.5
mA
DD
NOTES: 2. The input irradiance E is supplied by a GaAlAs infrared-emitting diode with λ = 880 nm.
e
p
3. Irradiance responsivity is characterized over the range V = 0.1 V to 4.5 V.
O
Switching Characteristics at VDD = 5 V, TA = 25°C, λp = 880 nm, RL = 10 kΩ (unless otherwise noted)
(see Note 3)
PARAMETER
Output pulse rise time
TEST CONDITIONS
See Notes 4 and 5
MIN
TYP
166
163
322
3.5
MAX
250
UNIT
µs
t
t
t
r
Output pulse fall time
Output settling time
See Notes 4 and 5
250
µs
f
µs
s
Integrated noise voltage
f = dc to 1 kHz
f = 10 Hz,
mV RMS
See Note 6
92
V
Output noise voltage, rms
f = 100 Hz
f = 1 Hz
86
µV/√Hz RMS
n
104
NOTES: 3. Irradiance responsivity is characterized over the range V = 0.1 V to 4.5 V.
O
4. Measured with R = 10 kΩ between output and ground.
L
5. The output waveform is monitored on an oscilloscope with Z = 1 MΩ, C < 20 pF.
i
i
6. Measured with external 1-kHz RC filter (10 kΩ/15.9 nF)
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TSL265
HIGHĆSENSITIVITY NEARĆINFRARED
LIGHTĆTOĆVOLTAGE CONVERTER
TAOS016 – SEPTEMBER 1999
PARAMETER MEASUREMENT INFORMATION
V
DD
E
e
Pulse
Generator
2
Input
–
IRED
(see Note A)
t
f
t
3
r
Output
+
90%
90%
R
L
TSL265
1
Output
(see Note B)
10%
10%
VOLTAGE WAVEFORM
TEST CIRCUIT
NOTES: A. The input irradiance is supplied by a pulsed GaAlAs infrared-emitting diode with the following characteristics: λ = 880 nm,
p
t < 1 µs, t < 1 µs.
r
f
B. The output waveform is monitored on an oscilloscope with the following characteristics: t < 100 ns, Z ≥ 1 MHz, C ≤ 20 pF.
r
i
i
Figure 1. Switching Times
TYPICAL CHARACTERISTICS
OUTPUT VOLTAGE
vs
IRRADIANCE
PHOTODIODE SPECTRAL RESPONSE
10
1
1
V
p
= 5 V
DD
T
A
= 25°C
λ
= 880 nm
0.9
No Load
= 25°C
T
A
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.01
0.1
0
0.001
1
10
100
1000
600
700
800
900
1000
1100
2
λ – Wavelength – nm
E – Irradiance – nW/cm
e
Figure 2
Figure 3
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TSL265
HIGHĆSENSITIVITY NEARĆINFRARED
LIGHTĆTOĆVOLTAGE CONVERTER
TAOS016 – SEPTEMBER 1999
TYPICAL CHARACTERISTICS
NORMALIZED OUTPUT VOLTAGE
vs
MAXIMUM OUTPUT VOLTAGE
vs
ANGULAR DISPLACEMENT
SUPPLY VOLTAGE
1
5
4
3
2
2
E = 2 mW/cm
e
p
λ
= 880 nm
R = 10 kΩ
0.8
L
A
T
= 25°C
0.6
0.4
0.2
0
1
0
3
3.5
4
4.5
5
80° 60°
40° 20°
0°
20° 40° 60°
80°
θ – Angular Displacement
V
– Supply Voltage – V
DD
Figure 4
Figure 5
POWER SUPPLY REJECTION RATIO
SUPPLY CURRENT
vs
vs
FREQUENCY
FREE-AIR TEMPERATURE
40
35
0.62
0.61
T
A
= 25°C
V
= 5.5 V
DD
No Load
30
25
0.60
0.59
0.58
0.57
0.56
20
15
10
5
0
0.55
0.54
0.01 k
0.1 k
1 k
10 k
100 k
1000 k
0
10
20
30
40
50
60
70
f – Frequency – Hz
T
A
– Free-Air Temperature – °C
Figure 6
Figure 7
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TSL265
HIGHĆSENSITIVITY NEARĆINFRARED
LIGHTĆTOĆVOLTAGE CONVERTER
TAOS016 – SEPTEMBER 1999
TYPICAL CHARACTERISTICS
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
OUTPUT VOLTAGE
vs
FREE-AIR TEMPERATURE
0.7
0.6
0.5
0.4
0.3
0.2
1.2
1
T
= 25°C
A
V
= 5V
DD
No Load
λp = 300 nm to 700 nm
0.8
0.6
0.4
0.2
0
0.1
0
2.7
3.2
3.7
4.2
4.7
5.2
5.7
0
10
20
30
40
50
60
70
V
– Supply Voltage – V
T
A
– Free-Air Temperature – °C
DD
Figure 8
Figure 9
INTEGRATED NOISE VOLTAGE
vs
MEASUREMENT BANDWIDTH FREQUENCY
OUTPUT VOLTAGE
vs
SUPPLY VOLTAGE
8000
1.001
1
V
= 5 V
DD
T
A
= 25°C
7000
6000
0.999
0.998
0.997
0.996
5000
4000
3000
2000
0.995
0.994
0.993
0.992
1000
0
0.991
0.99
10
100
1000
10000
2.5
3
3.5
4
4.5
5
5.5
6
6.5
V
– Supply Voltage – V
f – Measurement Bandwidth Frequency – Hz
DD
Figure 10
Figure 11
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TSL265
HIGHĆSENSITIVITY NEARĆINFRARED
LIGHTĆTOĆVOLTAGE CONVERTER
TAOS016 – SEPTEMBER 1999
MECHANICAL DATA
The TSL265 is implemented in a clear 3-leaded package with a large molded focusing lens.
0.072 (1,84)
0.056 (1,44)
0.189 (4,80)
0.035 (0,90)
0.173 (4,40)
0.012 (0,30)
0.165 (4,20)
0.070 (1,80)
0.029 (0,75)
0.150 (3,80)
0.070 (1,80)
1.10 (2,80)
0.189 (4,80)
0.173 (4,40)
0.016 (0,40)
R 0.035 (0,90)
0.079 (2,00)
0.039 (1,00)
0.027 (0,70)
0.025 (0,65)
0.622 (15,80)
0.543 (13,80)
1
2
3
0.018 (0,45)
0.079 (2,00)
0.018 (0,45)
0.157 (4,00)
Figure 12. Package Configuration
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. All dimensions apply before solder dip.
D. Package body is a clear nonfilled optically transparent material
E. Index of refraction of clear plastic is 1.55.
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TSL265
HIGHĆSENSITIVITY NEARĆINFRARED
LIGHTĆTOĆVOLTAGE CONVERTER
TAOS016 – SEPTEMBER 1999
PRODUCTION DATA — information in this document is current at publication date. Products conform to
specifications in accordance with the terms of Texas Advanced Optoelectronic Solutions, Inc. standard
warranty. Production processing does not necessarily include testing of all parameters.
NOTICE
Texas Advanced Optoelectronic Solutions, Inc. (TAOS) reserves the right to make changes to the products contained in this
document to improve performance or for any other purpose, or to discontinue them without notice. Customers are advised
to contact TAOS to obtain the latest product information before placing orders or designing TAOS products into systems.
TAOS assumes no responsibility for the use of any products or circuits described in this document or customer product
design, conveys no license, either expressed or implied, under any patent or other right, and makes no representation that
the circuits are free of patent infringement. TAOS further makes no claim as to the suitability of its products for any particular
purpose, nor does TAOS assume any liability arising out of the use of any product or circuit, and specifically disclaims any
and all liability, including without limitation consequential or incidental damages.
TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS, INC. PRODUCTS ARE NOT DESIGNED OR INTENDED FOR
USE IN CRITICAL APPLICATIONS IN WHICH THE FAILURE OR MALFUNCTION OF THE TAOS PRODUCT MAY
RESULT IN PERSONAL INJURY OR DEATH. USE OF TAOS PRODUCTS IN LIFE SUPPORT SYSTEMS IS EXPRESSLY
UNAUTHORIZED AND ANY SUCH USE BY A CUSTOMER IS COMPLETELY AT THE CUSTOMER’S RISK.
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