RF2412 [ETC]
RF Modulator ; RF调制器\n
ETC 
RF2412
BROADBAND DUAL-CONVERSION
QUADRATURE MODULATOR
5
Typical Applications
• Digital and Spread-Spectrum Systems
• Analog Communication Systems
• UHF Digital and Analog Transmitters
• GMSK, QPSK, DQPSK, QAM
• Portable Battery-Powered Equipment
• Commercial and Consumer Systems
Product Description
.299
.292
.009
.005
The RF2412 is a monolithic integrated transmitter univer-
sal modulation IC capable of generating modulated AM,
PM, or compound carriers in the VHF/UHF frequency
range. The modulation is performed at VHF, then the
resulting spectrum is upconverted to a frequency range
between 100MHz to 1000MHz. The IC contains all of the
required components to implement the modulation func-
tion including differential amplifiers for the baseband
inputs, a LO 90° hybrid phase splitter, limiting LO amplifi-
ers, two balanced mixers, a combining differential ampli-
fier, a second upconvert balanced mixer, and an output
RF amplifier which will drive a 50Ω load. Since the modu-
lation is performed at a low frequency, excellent ampli-
tude balance and phase accuracy are obtained.
1
.018
.014
5
.493
.486
.050
.413
.398
.092
8 °MAX
0°MIN
.010
.008
.050
.016
Optimum Technology Matching® Applied
Package Style: SOP-20
Si BJT
GaAs HBT
üGaAs MESFET
Si CMOS
Si Bi-CMOS
SiGe HBT
Features
• Single 3V to 6V Power Supply
• Digitally-Controlled Power Down Mode
• Dual Conversion
VDD2
VDD1
PD
1
2
3
4
5
6
7
8
9
20 RF OUT
19 GND
POWER
CONTROL
18 GND
• DC to 50MHz Modulation Frequency
• 50MHz to 150MHz IF Frequency
• 100MHz to 1000MHz RF Frequency
I SIG
I REF
Q REF
Q SIG
GND
17 LO2
16 GND
Σ
15 MIX IN+
14 MIX IN-
13 GND
Ordering Information
GND
12 MOD OUT-
11 MOD OUT+
-45°
RF2412
RF2412 PCBA
Broadband Dual-Conversion Quadrature Modulator
Fully Assembled Evaluation Board
+45°
LO1 10
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Functional Block Diagram
Rev B1 010329
5-7
RF2412
Absolute Maximum Ratings
Parameter
Supply Voltage
Rating
-0.5 to 7.5
Unit
V
DC
Caution! ESD sensitive device.
PD Voltage
V
+0.4
DD
V
DC
Input LO and RF Levels
Ambient Operating Temperature
Storage Temperature
+6
dBm
°C
°C
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
-40 to +85
-40 to +150
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
T = 25°C, V =5V, V
=2.5V,
REF
DD
BB=100kHz, LO1=70MHz, LO2=700MHz,
=3.0V , SSB, unless indicated other-
Modulation Signals (I&Q)
V
MOD
PP
wise.
5
Frequency Range
Signal Level
DC to 50
2.2
MHz
V
For 1dB compression
PP
Reference Voltage (V
)
2.0 to 3.0
V
REF
Input Impedance to GND
Amplitude Balance
Quadrature Phase Error
First LO Input
3
0.1
1
kΩ
dB
°
Frequency Range
50 to 150
30 to 225
-5 to +6
MHz
MHz
dBm
Ω
For 30dB sideband suppression
For 20dB sideband suppression
Power Level
Input Impedance
Second LO Input
Frequency Range
Power Level
750-j400
Without external 50Ω termination
100 to 1000
-5 to +6
600-j700
MHz
dBm
Ω
Input Impedance
Without external 50Ω termination
RF Output
Output Power
V
=5V, LO1,2 level=0dBm, SSB
DD
+4
0
-4
dBm
dBm
dBm
Freq=200MHz to 500MHz
Freq=500MHz to 800MHz
Freq=800MHz to 1000MHz
Output Power
V
=6V, LO1,2 power=0dBm, SSB
DD
+6
+3
-1
dBm
dBm
dBm
Ω
Freq=200MHz to 500MHz
Freq=500MHz to 800MHz
Freq=800MHz to 1000MHz
Nominal Output Impedance
Output VSWR
50
1.5:1
3:1
-155
Freq<600MHz
600MHz<Freq<1000MHz
Output Broadband Noise Power
Spurious
dBm/Hz
Single sideband modulation
Sideband Suppression
Carrier Suppression
35
25
dBc
dBc
Unadjusted. Modulation DC offset may be
externally adjusted for maximum suppres-
sion. See Pin Descriptions.
Odd unfiltered IF
First LO Harmonics
-20
-30
dBc
dBc
Even unfiltered IF
Power Supply
Voltage
Current Consumption
3 to 6.5
31
V
mA
Operating limits
35
V
=5.0V
CC
5-8
Rev B1 010329
RF2412
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
Power Down
Turn On/Off Time
PD Input Resistance
Power Down “ON”
<100
>50
ns
kΩ
V
V
Threshold voltage
Threshold voltage
CC
Power Down “OFF”
0
V
5
Rev B1 010329
5-9
RF2412
Pin
1
Function Description
Interface Schematic
Supply Voltage for the RF Output Stage only. A 33pF external bypass
capacitor is required, and an optional 0.1µF will be required if no other
low frequency bypass capacitors are nearby. The trace length between
the pin and the bypass capacitors should be minimized. The ground
side of the bypass capacitors should connect immediately to ground
plane. Though the part is designed to run from a 5V supply, it will also
work at 4V. Gain and available output power will be reduced by 5dB to
10dB. Pins 1 and 2 may share a common bypass capacitor.
VDD2
Supply Voltage for all circuits but the RF Output Stage. The same com-
ments as for VDD2 apply to this pin. Pins 1 and 2 may share a common
bypass capacitor.
2
3
VDD1
PD
Power Down control. When this pin is 0V all circuits are turned off, and
VDD1
VDD2
when connected to V , all circuits are operational. This is a high
DD
impedance input, internally connected to the parallel gates of two
switching FETs. To minimize current consumption in power down
mode, this pin should be as close to 0V as possible. Turn-on voltage of
some parts of the circuit may be as low as 0.1V. In order to maximize
5
PD
output power, the voltage on this pin should be as close to V as pos-
DD
sible during normal operation. A 33pF capacitor is recommended for
bypassing. If this pin is not used for power down control, it may be tied
to pins 1 and 2, and all three pins may share one 33pF capacitor, pro-
vided that the associated trace lengths are minimized.
Baseband input to the I mixer. This pin is DC coupled. Maximum output
power is obtained when the input signal has a peak to peak amplitude
4
5
I SIG
I SIG
of 5V. A DC reference of approximately V /2 must be supplied to this
DD
pin. The input impedance of this pin is about 3kΩ. The SIG and REF
inputs are inputs of a differential amplifier. Therefore, the REF and SIG
inputs are interchangeable. If swapping the I SIG and I REF pins, the
Q SIG and Q REF pins also need to be swapped to maintain the correct
phase. The SIG and REF pins may be driven differentially to increase
conversion gain.
Reference voltage for the I mixer. This voltage should be the same as
the DC voltage supplied to the I SIG pin. To obtain a carrier suppres-
sion of better than 25dB it may be tuned ± 0.15V (relative to the I SIG
DC voltage). Without tuning, the carrier suppression will typically be
better than 25dB. The input impedance of this pin is about 3kΩ.
I REF
I REF
Reference voltage for the Q mixer. This voltage should be the same as Same as pin 5.
the DC voltage supplied to the Q SIG pin. To obtain a carrier suppres-
sion of better than 25dB it may be tuned ±0.15V (relative to the Q SIG
DC voltage). Without tuning, the carrier suppression will typically be
better than 25dB. The input impedance of this pin is about 3 kΩ.
6
7
Q REF
Q SIG
Baseband input to the Q mixer. This pin is DC coupled. Maximum out- Same as pin 4.
put power is obtained when the input signal has a peak to peak ampli-
tude of 5V. A DC reference of approximately V /2 must be supplied to
DD
this pin. The input impedance of this pin is about 3 kΩ. Therefore, the
REF and SIG inputs are interchangeable. If swapping the I SIG and I
REF pins, the Q SIG and Q REF also need to be swapped to maintain
the correct phase. The SIG and REF pins may be driven differentially to
increase conversion gain.
Ground connection. Keep traces physically short and connect immedi-
ately to ground plane for best performance.
8
9
GND
GND
Same as pin 8.
5-10
Rev B1 010329
RF2412
Pin
10
Function Description
Interface Schematic
High impedance modulator LO input. If approximately 0dBm of LO
LO1
LO1
power is available, a shunt 56Ω resistor may be used for matching. If
the available LO power is approximately -6dBm, then a reactive match
may be required. There is an internal blocking capacitor between this
pin and the LO circuitry, but not between the pin and an internal resistor
to ground (see the functional block diagram). An external blocking
capacitor should be provided if the pin is connected to a device with DC
present. A DC path to ground (an inductor or resistor to ground) is,
however, acceptable at this pin. If a blocking capacitor is required, a
value of 1nF is recommended.
Balanced IF output port. If no filtering is required this pin can be con-
nected directly to the MIX IN+ pin. This pin is NOT DC blocked and car-
ries DC. A blocking capacitor of 1nF is needed when this pin is
connected to a DC path. An appropriate matching network may be
needed if an IF filter is used.
11
MOD OUT+
MOD OUT+
MOD OUT-
Same as pin 11, except complementary output.
Same as pin 8.
See pin 11.
12
13
14
MOD OUT-
GND
MIX IN-
5
High impedance balanced input to the IF stage. This pin has an internal
DC blocking capacitor. If no IF filter is needed this pin may be con-
nected directly to MOD OUT-. If an IF filter is used, an external shunt
resistor to ground may be needed to provide correct matching for the
filter.
MIX IN+
MIX IN-
BIAS
BIAS
Same as pin 14, except complementary input.
Same as pin 8.
See pin 14.
15
16
17
MIX IN+
GND
LO2
Mixer LO Input port. A shunt 56Ω resistor can be used for matching.
This pin has internal DC blocking,
LO2
BIAS
BIAS
Same as pin 8.
Same as pin 8.
18
19
20
GND
GND
RF OUT
50Ω output. This pin is not internally DC blocked, and an external
blocking capacitor of 33pF is required.
RF OUT
Rev B1 010329
5-11
RF2412
Application Schematic
915 MHz Operation, DC Coupled I and Q Inputs
VDD
100 nF
33 pF
33 pF
RF OUT
1
2
20
19
18
17
16
15
14
13
12
11
POWER
CONTROL
3
33 pF
I SIG
4
33 pF
VREF
56
Ω
5
5
Σ
6
100 nF
Q SIG
7
8
9
-45°
+45°
1 nF
LO1 IN
10
56
Ω
Application Schematic
915 MHz Operation, AC Coupled I and Q Inputs
VDD
100 nH
33 pF
33 pF
RF OUT
1
2
20
19
18
17
16
15
14
13
12
11
POWER
CONTROL
100 nF
33 pF
3
I SIG
33 pF
100
Ω
LO2 IN
4
VREF
56
Ω
5
100
100
Ω
Ω
Σ
100 nF
100 nF
6
100
Ω
7
Q SIG
8
9
-45°
+45°
1 nF
LO1 IN
10
56
Ω
5-12
Rev B1 010329
RF2412
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
C5
100 pF
50 Ω µstrip
RF OUT
J5
P1-1
1
2
20
19
18
17
16
15
14
13
12
11
C1
33 pF
POWER
CONTROL
3
C4
100 pF
50 Ω µstrip
50 Ω µstrip
ISIG
J1
LO2 IN
J4
4
P1-3
5
C2
33 pF
R2
56
Σ
Ω
6
50 Ω µstrip
QSIG
J2
5
FOR 50
Ω
MATCH
7
8
9
-45°
C3
1 nF
+45°
50 Ω µstrip
LO1 IN
J3
10
P1
1
2412400 Rev -
P1-1
P1-3
VCC
R1
56
Ω
2
GND
REF
3
FOR 50
Ω MATCH
Rev B1 010329
5-13
RF2412
Evaluation Board Layout
1.52” x 1.52”
5
5-14
Rev B1 010329
RF2412
Pout vs. Baseband Modulation Frequency
Pout vs. Baseband Modulation Voltage
20
10
5
0
Upper Side Band
BB: 54.5dBmV
+25C
-40C
+85C
+25C
-40C
+85C
LO1: 70 MHz, 0 dBm, 56 Res. Term.
Ω
LO2: 845 MHz, 0 dBm, 56 Res. Term.
Ω
Vdd: 5.0V, Vref=2.5V
0
-5
-10
-20
-30
-10
-15
Upper Side Band
BB: 100 kHz
LO1: 70 MHz, 0 dBm, 56 Res. Term.
Ω
LO2: 845 MHz, 0 dBm, 56 Res. Term.
Ω
Vdd: 5.0V, Vref=2.5V
5
0
10
20
30
40
50
60
45
50
55
60
65
Modulation Frequency (MHz)
Modulation Voltage (dBmV)
Pout vs. LO1 Frequency
Pout vs. LO1 Power
20
10
20
10
Upper Side Band
BB: 100 kHz, 54.5 dBmV
Upper Side Band
BB: 100 kHz, 54.5dBmV
+25C
-40C
+85C
+25C
-40C
+85C
LO1: 70 MHz, 56 Res. Term.
LO1: 0 dBm, 56 Res. Term.
Ω
Ω
LO2: 845 MHz, 0 dBm, 56 Res. Term.
LO2: 845 MHz, 0 dBm, 56 Res. Term.
Ω
Ω
Vdd: 5.0V, Vref=2.5V
Vdd: 5.0V, Vref=2.5V
0
0
-10
-20
-30
-10
-20
-30
0
50
100
150
200
250
300
-10
-8
-6
-4
-2
0
2
4
6
LO1 Frequency (MHz)
LO1 Power (dBm)
Pout vs. LO2 Frequency
Pout vs. LO2 Power
20
10
20
10
Upper Side Band
BB: 100 kHz, 54.5 dBmV
Upper Side Band
BB: 100 kHz, 54.5dBmV
+25C
-40C
+85C
+25C
-40C
+85C
LO1: 70 MHz, 0 dBm, 56 Res. Term.
LO1: 70 MHz, 0 dBm, 56 Res. Term.
Ω
Ω
LO2: 845 MHz, 56 Res. Term.
LO2: 0 dBm, 56 Res. Term.
Ω
Ω
Vdd: 5.0V, Vref=2.5V
Vdd: 5.0V, Vref=2.5V
0
0
-10
-20
-30
-10
-20
-30
100
400
700
1000
1300
1600
1900
-10
-8
-6
-4
-2
0
2
4
6
LO2 Frequency (MHz)
LO2 Power (dBm)
Rev B1 010329
5-15
RF2412
Phase Error vs. LO1 Frequency
Suppression Levels vs. LO1 Frequency
(+25C)
10.0
0
-20
-IMD3
CARR
-IMD2
+IMD2
S.B.
+IMD3
5.0
-40
0.0
-60
-5.0
-10.0
Upper Side Band
BB: 100 kHz, 54.5dBmV
+25C
-40C
+85C
Upper Side Band
BB: 100 kHz, 54.5dBmV
-80
LO1: 0 dBm, 56 Res. Term.
Ω
LO1: 0 dBm, 56 Res. Term.
Ω
LO2: 845 MHz, 0 dBm, 56 Res. Term.
Ω
LO2: 845 MHz, 0 dBm, 56 Res. Term.
Ω
Vdd: 5.0V, Vref=2.5V
Vdd: 5.0V, Vref=2.5V
5
-100
0
50
100
150
200
250
300
0
0
0
50
100
150
200
250
300
300
300
LO1 Frequency (MHz)
LO1 Frequency (MHz)
Amplitude Error vs. LO1 Frequency
Suppression Levels vs. LO1 Frequency
(-40C)
2.0
1.5
0
-20
-IMD3
CARR
-IMD2
+IMD2
S.B.
+25C
-40C
+85C
+IMD3
1.0
0.5
-40
0.0
-60
-0.5
-1.0
-1.5
-2.0
Upper Side Band
BB: 100 kHz, 54.5dBmV
Upper Side Band
BB: 100 kHz, 54.5dBmV
-80
LO1: 0 dBm, 56 Res. Term.
Ω
LO1: 0 dBm, 56 Res. Term.
Ω
LO2: 845 MHz, 0 dBm, 56 Res. Term.
Ω
LO2: 845 MHz, 0 dBm, 56 Res. Term.
Ω
Vdd: 5.0V, Vref=2.5V
Vdd: 5.0V, Vref=2.5V
-100
0
50
100
150
200
250
300
50
100
150
200
250
LO1 Frequency (MHz)
LO1 Frequency (MHz)
Pout and Idd vs. Vdd
Suppression Levels vs. LO1 Frequency
(+85C)
20
10
100
80
60
40
20
0
0
-20
Upper Side Band
BB: 100 kHz, 54.5dBmV
LO1: 70 MHz, 0 dBm, 56 Res. Term.
-IMD3
CARR
-IMD2
+IMD2
S.B.
+IMD3
Ω
LO2: 845 MHz, 0 dBm, 56 Res. Term.
Ω
Vref=2.5V
0
-40
-10
-20
-30
-60
Upper Side Band
BB: 100 kHz, 54.5dBmV
-80
LO1: 0 dBm, 56 Res. Term.
Ω
Pout, +25C
Idd, +25C
Pout, -40C
Idd, -40C
Pout, +85C
LO2: 845 MHz, 0 dBm, 56 Res. Term.
Ω
Idd, +85C
Vdd: 5.0V, Vref=2.5V
-100
4.0
4.5
5.0
5.5
6.0
6.5
50
100
150
200
250
Vdd (Volts)
LO1 Frequency (MHz)
5-16
Rev B1 010329
RF2412
Optimized Carrier Suppression vs. LO1 Frequency
(optimized at +25C and LO1=70 MHz)
0
-20
-40
-60
-80
Upper Side Band
BB: 100 kHz, 54.5dBmV
LO1: 0 dBm, 56 Res. Term.
Ω
LO2: 845 MHz, 0 dBm, 56 Res. Term.
Ω
Vdd: 5.0V, Vref=2.5V
+25C
-40C
+85C
5
0
50
100
150
200
250
300
LO1 Frequency (MHz)
Optimized Sideband Suppression vs. LO1 Frequency
(optimized at +25C and LO1=70 MHz)
0
-20
-40
-60
-80
Upper Side Band
BB: 100 kHz, 54.5dBmV
LO1: 0 dBm, 56 Res. Term.
Ω
LO2: 845 MHz, 0 dBm, 56 Res. Term.
Ω
Vdd: 5.0V, Vref=2.5V
+25C
-40C
+85C
0
50
100
150
200
250
300
LO1 Frequency (MHz)
Rev B1 010329
5-17
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