RF2413PCBA [RFMD]
GAIN CONTROLLED DUAL-CONVERSION QUADRATURE MODULATOR; 增益可调DUAL-转换正交调制器
| 型号： | RF2413PCBA |
| 厂家： | 
RF MICRO DEVICES |
| 描述： | GAIN CONTROLLED DUAL-CONVERSION QUADRATURE MODULATOR |
| 文件： | 总10页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RF2413
ꢀ
• Digital and Spread Spectrum Systems
• Analog Communication Systems
• GSM Systems
• CDMA Systems
• General Purpose Frequency Conversion
• Portable Battery Powered Equipment
.299
.292
.009
.005
The RF2413 is a monolithic integrated transmitter univer-
sal modulation IC capable of generating modulated AM,
PM, or compound carriers in the VHF/UHF frequency
range. The modulation is performed at VHF, then the
resulting spectrum is upconverted to a frequency range
between 100MHz and 1000MHz. Up to 60dB of power
control is possible through the use of two gain control
pins. The IC contains all of the required components to
implement the modulation function including differential
amplifiers for the baseband inputs, a 90° hybrid phase
splitter, limiting LO amplifiers, two balanced mixers, a
combining, gain-controlled differential amplifier, a second
balanced mixer, and an output gain-controlled RF ampli-
fier which will drive a 50Ω load.
1
.018
.014
5
.493
.486
.050
.413
.398
.092
8 °MAX
0°MIN
.010
.008
.050
.016
Si BJT
GaAs HBT
SiGe HBT
ꢀGaAs MESFET
Si CMOS
Si Bi-CMOS
• Single 3V to 6.5V Power Supply
• Low Broadband Noise Floor
VDD2
VDD1
PD
1
2
3
4
5
6
7
8
9
20 RF OUT
19 GND4
POWER
CONTROL
• Excellent Amplitude & Phase Balance
• Digitally Controlled Power Down
• 30MHz to 100MHz IF Frequency
• 200MHz to 1000MHz RF Frequency
18 GND3
I SIG
I REF
Q REF
Q SIG
GC1
17 LO2
16 GND2
Σ
15 MIX IN+
14 MIX IN-
13 GND1
GC2
12 MOD OUT-
11 MOD OUT+
-45°
RF2413
Gain Controlled Dual-Conversion Quadrature Modu-
+45°
lator
LO1 10
RF2413 PCBA
Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev B3 990419
5-19
RF2413
Absolute Maximum Ratings
Parameter
Supply Voltage
Rating
-0.5 to 7.0
+6
Unit
V
DC
Caution! ESD sensitive device.
Input LO and RF Levels
I and Q Modulation Levels
dBm
V
V
DD
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Operating Ambient Temperature
Storage Temperature
-40 to +85
-40 to +150
°C
°C
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
T = 25°C, V =5V, V
=2.5V,
REF
DD
BB=100kHz, LO1=70MHz, LO2=700MHz,
=3.0V , SSB, unless indicated other-
Modulation Signals (I&Q)
V
MOD
PP
wise.
5
Frequency Range
Signal Level
DC to 25
3.0
MHz
V
For 1dB compression
PP
Reference Voltage (V
)
2.0 to 3.0
V
REF
Input Impedance
Amplitude Balance
Quadrature Phase Error
3
0.1
1
kΩ
dB
°
First LO Input
Frequency Range
30 to 200
30 to 250
-5 to +6
MHz
MHz
dBm
Ω
For 30dB sideband suppression
For 20dB sideband suppression
Power Level
Input Impedance
750-j500
At 100MHz, without external 50Ω termina-
tion
IF Inputs & Outputs (MOD
OUT & MIX IN)
Output Impedance
290-j160
170-j180
6000-j2500
5200-j2800
Ω
Ω
Ω
Ω
At 100MHz
At 200MHz
At 100MHz
At 200MHz
Input Impedance
Second LO Input
Frequency Range
Power Level
100 to 1000
0 to +6
2000-j3000
MHz
dBm
Ω
Input Impedance
At 300MHz, without external 50Ω termina-
tion
600-j1400
Ω
At 1000MHz, without external 50Ω termina-
tion
RF Output
Output Power
V
=6V, LO1,2 power=0dBm, SSB
DD
+6
+2
-1
75
1.5
dBm
dBm
dBm
dB
Freq=200MHz to 500MHz
Freq=500MHz to 800MHz
Freq=800MHz to 1000MHz
Gain 1 and Gain 2
-2
+5
Total Gain Control Range
Gain Control Voltage for mini-
mum gain
V
Gain Control Voltage for maxi-
mum gain
5.0
V
Nominal Output Impedance
Output VSWR
50
1.5:1
3:1
Ω
Freq<600MHz
600MHz<Freq<1000MHz
Output Broadband Noise Power
-155
dBm/Hz
5-20
Rev B3 990419
RF2413
Single sideband modulation
Spurious
Sideband Suppression
Carrier Suppression
30
20
35
25
dBc
dBc
Unadjusted.
Unadjusted. Modulation DC offset may be
externally adjusted for maximum suppres-
sion. Suppression is then typically 40dBc.
Odd unfiltered IF
First LO Harmonics
20
30
dBc
dBc
Even unfiltered IF
Power Down
Turn On/Off Time
PD Input Resistance
Power Down “ON”
<100
>50
ns
kΩ
V
V
Threshold voltage
Threshold voltage
CC
Power Down “OFF”
Power Supply
Voltage
0
V
5
V
V
mA
Specifications
Operating limits
3 to 6.5
35
Current Consumption
50
5
Rev B3 990419
5-21
RF2413
Pin
1
Function Description
Interface Schematic
Supply Voltage for the RF Output Stage only. A 33pF external bypass
capacitor is required and an optional 0.1µF will be required if no other
low frequency bypass capacitors are nearby. The trace length between
the pin and the bypass capacitors should be minimized. The ground
side of the bypass capacitors should connect immediately to ground
plane.
VDD2
Though the part is designed to run from a 5V supply, it will work at 3V.
Gain and available output power will be reduced by 5 to 10dB. This also
means that the part is sensitive to unintended power supply variation.
Power supply voltage should be kept constant, or another way of main-
taining constant output power is required.
Supply Voltage for all circuits except the RF Output Stage. The same
comments as for VDD2 apply to this pin.
2
3
VDD1
PD
Power Down control. When this pin is 0V all circuits are turned off, and
when this pin is VDD all circuits are operating. This is a high impedance
input, internally connected to the gates of a few FETs. To minimize cur-
rent consumption in power down mode, this pin should be as close to
0V as possible. Turn-on voltage of some parts of the circuit may be as
low as 0.1V. In order to maximize output power this pin should be as
close to VDD as possible during normal operation.
VDD1
VDD2
5
PD
Baseband input to the I mixer. This pin is DC coupled. Maximum output
power is obtained when the input signal has a peak to peak amplitude
of 5V. The DC level supplied to this pin should be VDD2/2. Input imped-
ance of this pin is about 3kΩ.
4
5
6
I SIG
I REF
Q REF
I SIG
Reference voltage for the I mixer. This voltage should be the same as
the DC voltage supplied to the I SIG pin. To obtain a carrier suppres-
sion of better than 25dB it may be tuned 0.15V (relative to the I SIG
DC voltage). Without tuning it will typically be better than 25dB. Input
impedance of this pin is about 3kΩ.
I REF
Reference voltage for the Q mixer. This voltage should be the same as Same as pin 5.
the DC voltage supplied to the Q SIG pin. To obtain a carrier suppres-
sion of better than 25dB it may be tuned 0.15V (relative to the Q SIG
DC voltage). Without tuning, the carrier suppression will typically be
better than 25dB. The input impedance of this pin is about 3 kΩ.
Baseband input to the Q mixer. This pin is DC coupled. Maximum out- Same as pin 4.
put power is obtained when the input signal has a peak to peak ampli-
tude of 5V. The DC level supplied to this pin should be VDD2/2. Input
impedance of this pin is about 3kΩ.
7
8
Q SIG
GC1
Gain control of the IF input amplifier. This pin, when used as the only
gain control, will give a 30dB control range. When used together with
GCx
GC2, a 60dB range is available. When this pin is at 1.8V or lower, the
gain is set to the minimum; when this pin is at 3.8V or above, the gain is
set to the maximum; see the plot below for typical characteristics. If
fixed maximum output level is required, it is recommended to connect
this pin to VDD. There are no provisions in the chip for limiting the
bandwidth of the gain control, so very fast response times are avail-
able. If a slower response is desired, an external capacitor can be
added.
Gain control for the RF output amplifier. This pin has the same control Same as pin 8.
characteristics as GC1.
9
GC2
5-22
Rev B3 990419
RF2413
High impedance modulator LO input. A shunt 56Ω resistor can be used
for matching. This pin is NOT internally DC blocked. An external block-
ing capacitor must be provided if the pin is connected to a device with
DC present. A DC path to ground (i.e. an inductor or resistor to ground)
is, however, acceptable at this pin. If a blocking capacitor is required, a
value of 1nF is recommended.
10
11
LO1
LO1
Balanced IF output port. If no filtering is required this pin can be con-
nected directly to the MIX IN+ pin. This pin is NOT DC blocked and car-
ries DC. A blocking capacitor of 1nF is needed when this pin is
connected to a DC path. An appropriate matching network may be
needed if an IF filter is used.
MOD OUT+
MOD OUT+
MOD OUT-
Same as pin 11, except complementary output.
See pin 11.
12
13
MOD OUT-
GND1
Ground connection for all baseband circuits, modulator and the IF
buffer amplifier. Keep traces physically short and connect immediately
to ground plane for best performance.
High impedance balanced input to the gain controlled IF stage. This pin
has an internal DC blocking capacitor. If no IF filter is needed, this pin
may be connected directly to MOD OUT-. If an IF filter is used, an exter-
nal shunt resistor to ground may be needed to provide correct matching
for the filter.
14
MIX IN-
MIX IN+
MIX IN-
5
BIAS
BIAS
Same as pin 14, except complementary input.
See pin 14.
15
16
MIX IN+
GND2
Ground connection for the limiting LO2 buffer amplifier. Keep traces
physically short and connect immediately to ground plane for best per-
formance.
Mixer LO Input port. A shunt 56Ω resistor can be used for matching.
This pin has internal DC blocking,
17
LO2
LO2
BIAS
BIAS
Ground connection for the IF mixer and the RF gain control stage. Keep
traces physically short and connect immediately to ground plane for
best performance.
18
GND3
Ground connection for the RF output stage. Keep traces physically
short and connect immediately to ground plane for best performance.
19
20
GND4
50Ω output. This pin is not internally DC blocked, and an external
blocking capacitor of 100pF is required.
RF OUT
RF OUT
Rev B3 990419
5-23
RF2413
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VDD
33 pF
50 Ω µstrip
50 Ω µstrip
RF OUTPUT
LO 2 INPUT
1
2
20
19
18
17
16
15
14
13
12
11
100 nF
33 pF
POWER
CONTROL
CMOS
POWER
DOWN
3
100 nF
Q INPUT
4
Note 1
56
1 F
µ
470
Ω
Ω
VREF
5
470
470
Ω
Ω
Σ
6
470
Ω
100 nF
5
Q INPUT
7
GAIN
CONTROL 1
Note 2
8
GAIN
CONTROL 2
Note 3
9
-45°
+45°
1 nF
50 Ω µstrip
LO 1
INPUT
10
56
Ω
NOTE 1: Optional; High input impedance without resistor. SMD
resistor mounted adjacent to package pin, grounded through
via to the ground plane.
NOTE 2: If no IF filter is needed, tie pins 11, 12, 14, and 15 as shown.
Otherwise insert the filter and the matching network.
NOTE 3: Gain control pins (8 and 9) may be tied together directly.
5-24
Rev B3 990419
RF2413
ꢏꢐꢆꢃꢑꢆꢇꢄꢈꢉꢊꢒꢈꢆꢓꢔꢊꢋꢅꢌꢍꢎꢆꢇꢄꢅ
(Download Bill of Materials from www.rfmd.com.)
C5
100 pF
50 Ω µstrip
RF OUT
J5
P1-1
1
2
20
19
18
17
16
15
14
13
12
11
C1
33 pF
C6
100 nF
POWER
CONTROL
3
C4
100 pF
50 Ω µstrip
50 Ω µstrip
ISIG
J1
LO2 IN
J4
4
P1-3
5
C2
33 pF
R2
56
Σ
Ω
6
50 Ω µstrip
QSIG
J2
5
FOR 50
Ω
MATCH
7
P2-1
P2-3
8
9
-45°
C3
1 nF
+45°
Ω µ
50
strip
LO1 IN
J3
10
P1
1
P2
2413400 Rev A
1
2
3
P1-1
P1-3
VCC
P2-1
P2-3
GAIN 1
GND
R1
56
Ω
2
GND
REF
GAIN 2
3
Ω
FOR 50 MATCH
Rev B3 990419
5-25
RF2413
ꢏꢐꢆꢃꢑꢆꢇꢄꢈꢉꢊꢒꢈꢆꢓꢔꢊꢕꢆꢖꢈꢑꢇ
ꢗꢘꢀꢙꢚꢊꢛꢊꢗꢘꢀꢙꢚ
Board Size 0.039”; Board Material FR-4; Multi-Layer
5
5-26
Rev B3 990419
RF2413
Pout vs. Gain Control Voltages
10
0
-10
-20
-30
-40
-50
-60
-70
BB: 100 kHz, 1.5 Vpp
LO1: 124 MHz, 0 dBm
LO2: 569 MHz, 0 dBm
Vdd: 5.0V, Vref=2.5V
5
Vg1=Vg2=V gain
Vg1=Vdd, Vg2=V gain
Vg2=Vdd, Vg1=V gain
1.5
2
2.5
3
3.5
4
4.5
5
Vgain (Volts)
Rev B3 990419
5-27
RF2413
5
5-28
Rev B3 990419
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