RF2416 [RFMD]
DUAL-BAND 2.7V LOW NOISE AMPLIFIER; DUAL- BAND 2.7V低噪声放大器
| 型号： | RF2416 |
| 厂家： | 
RF MICRO DEVICES |
| 描述： | DUAL-BAND 2.7V LOW NOISE AMPLIFIER |
| 文件： | 总10页 (文件大小：420K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary
RF2416
DUAL-BAND 2.7V LOW NOISE AMPLIFIER
4
Typical Applications
• GSM/DCS Dual-Band Handsets
• Cellular/PCS Dual-Band Handsets
• General Purpose Amplification
• Commercial and Consumer Systems
1.00
0.85
Product Description
4
3.00
sq.
0.80
0.65
0.65
0.30
4 PLCS
The RF2416 is a dual-band low noise amplifier with
bypass switch designed for use as a front-end for
950MHz GSM and DCS1800/PCS1900 applications. It
may also be used for dual-band cellular/PCS application.
The 900MHz LNA is a single-stage amplifier with bypass
switch; the 1800/1900 LNA is a two-stage amplifier with
bypass switch. Both amplifiers have excellent noise figure
and high linearity in both high gain and bypass/low gain
mode. The device is packaged in a 3mmx3mm, 12 pin,
leadless chip carrier.
0.60
0.24 typ
0.30
0.18
1.25
0.95
2
sq.
0.75
0.50
12°
max
0.23
0.13
0.05
0.01
0.50
4 PLCS
Dimensions in mm.
NOTES:
1
Shaded Pin is Lead 1.
Dimension applies to plated terminal and is measured between 0.02 mm and
0.25 mm from terminal end.
2
3
Pin 1 identifier must exist on top surface of package by identification mark or
feature on the package body. Exact shape and size is optional.
Package Warpage: 0.05 mm max.
4
5
Die thickness allowable: 0.305 mm max.
Optimum Technology Matching® Applied
Package Style: LCC, 12-Pin, 3x3
Si BJT
GaAs MESFET
üGaAs HBT
SiGe HBT
Si Bi-CMOS
Si CMOS
Features
• Low Noise and High Intercept Point
• Dual-Band Application GSM900 and
DCS1800/PCS1900
12
11
10
• Power Down Control
HB IN
1
2
3
9
8
7
HB OUT
• Switchable Gain
Logic
Control
HB BIAS
LB BIAS
HB SELECT
LB SELECT
4
5
6
Ordering Information
RF2416
RF2416 PCBA
Dual-Band 2.7V Low Noise Amplifier
Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Functional Block Diagram
Rev A2 010810
4-199
Preliminary
RF2416
Absolute Maximum Ratings
Parameter
Supply Voltage
Rating
-0.5 to +6.0
Unit
Caution! ESD sensitive device.
V
DC
Input RF Level
Storage Temperature
+10
-40 to +150
dBm
°C
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
Operating Range
Overall Frequency Range
800
1800
2.7
1000
2000
3.0
MHz
MHz
V
Low Band Operation
High Band Operation
VCC1 HB, VCC2 HB, VCC1 LB
4
Supply Voltage (V
)
2.8
2.8
CC
Power Down Voltage (V
)
2.7
3.0
V
V
HB BIAS, LB BIAS
BIAS
Logic Control Voltage Level
0
3.0
HB SELECT, LB SELECT
o
Operating Ambient Temperature
-40
+85
C
Input Impedance
Output Impedance
50
50
Ω
Ω
T = 25°C, RF=950MHz,
VCC1LB=VCC2LB=2.78V, LBSelect=0V,
950MHz Performance -
High Gain Mode
Z
=Z =50Ω
IN
O
Gain
14
15.5
17
+0.5
dB
dB
Gain Variation Over
Temperature Range
Gain Variation Over
Frequency Band
Noise Figure
Reverse Isolation
Input IP3
+0.5
2.0
dB
1.1
21
+5.0
-9
dB
dB
dBm
dB
15
+2.0
-12
Input P1dB
Input VSWR
Output VSWR
Total Current Draw
2:1
2:1
6.0
4.8
mA
900MHz LNA ENABLED, 1900MHz LNA
DISABLED. I + I
CC
PD
T = 25°C, RF=950MHz,
VCC1LB=VCC2LB=2.78V, LBSelect=2.7V,
950MHz Performance -
Bypass Mode
Z
=Z =50Ω
IN
O
Gain
Gain Reduction
Input IP3
Input P1dB
Input VSWR
Output VSWR
Total Current Draw
-8
-6
-3
dB
dBc
dBm
dB
21.5
15.0
+2
12.0
-1
2.5:1
2:1
See Application Notes
4-200
Rev A2 010810
Preliminary
RF2416
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
T = 25°C, RF=1850MHz, VCC1HB=2.78V,
HBSelect=0V, Z =Z =50Ω
1850MHz Performance -
High Gain Mode
IN
O
Gain
15
17.5
19
+0.5
dB
dB
Gain Variation Over
Temperature Range
Gain Variation Over
Frequency Band
Noise Figure
Reverse Isolation
Input IP3
+0.5
2.1
dB
1.5
20
+1.0
-10
dB
dB
dBm
dB
15
-2.0
-13
Input P1dB
4
Input VSWR
Output VSWR
Total Current Draw
2:1
2:1
10
8.2
mA
1900MHz LNA ENABLED, 900MHz LNA
DISABLED. I + I
CC
PD
T = 25°C, RF=1850MHz, VCC1HB=2.78V,
HBSelect=2.7V, Z =Z =50Ω
1850MHz Performance -
Bypass Mode
Gain
Gain Reduction
Input IP3
IN
O
-7
22
12.0
+5
-5
23
15.0
+8
-3
24
dB
dBc
dBm
dB
Input P1dB
Input VSWR
2:1
Output VSWR
Total Current Draw
AGC Settling Time
Rise and Fall Time
2.5:1
See Applications Notes
10
10
µs
µs
Rev A2 010810
4-201
Preliminary
RF2416
Pin
1
Function Description
Interface Schematic
DCS1800/PCS1900 RF input pin.
HB IN
To Bias
Circuit
HB IN
VCC1 HB
HB GND1
HB BIAS is set to the supply voltage at high gain mode. For bypass
mode see “Gain Select Possibility”.
2
3
HB BIAS
HB VREF/P
4
LB BIAS is set to the supply voltage at high gain mode. For bypass
mode see “Gain Select Possibility”.
LB BIAS
LB VREF/PD
GSM900 RF input pin.
4
5
LB IN
To Bias
Circuit
LB OUT
LB IN
LB GND
LNA emittance inductance. Total inductance is comprised of
package+bondwire+L2 on PCB.
LB GND
GSM900 Amplifier Output pin. This pin is an open-collector output. It
6
7
LB OUT
must be biased to V through a choke or matching inductor. This pin
CC
is typically matched to 50Ω with a shunt bias/matching inductor and
series blocking/matching capacitor. Refer to application schematics.
This pin selects high gain and bypass for GSM900.
Select < 0.8V, high gain.
LB SELECT
LB SELECT
Select > 1.8V, low gain.
This pin selects high gain and bypass for DCS1800/PCS1900.
Select < 0.8V, high gain.
Select > 1.8V, low gain.
8
9
HB SELECT
HB OUT
HB SELECT
DCS1800 Amplifier Output pin. This pin is an open-collector output. It
HB OUT
must be biased to V through a choke or matching inductor. This pin
CC
is typically matched to 50Ω with a shunt bias/matching inductor and
series blocking/matching capacitor. Refer to application schematics.
HB GND2
4-202
Rev A2 010810
Preliminary
RF2416
Pin
10
Function Description
Interface Schematic
LNA2 emittance inductance. Total inductance is comprised of
package+bondwire+L5 on PCB.
HB GND2
Open collector for first stage LNA of DCS1800/PCS1900. It must be
11
12
VCC1 HB
VCC1 HB
HB GND1
biased to V through a choke or matching inductor.
CC
4
LNA1 emittance inductance. Total inductance is comprised of
package+bondwire+L7 on PCB.
HB GND1
Rev A2 010810
4-203
Preliminary
RF2416
Application Notes
Bypass Mode Configurations
The RF2416 may be placed into either high gain or bypass mode via the HB SELECT and LB SELECT pins for high
band and low band operation, respectively. The high gain state is selected by asserting the select pin for the appropriate
band to a voltage level of less than 0.8V. For Bypass operation, there are two possible methods for placing the RF2416
into this low gain state. The table below shows the two possible Bypass states for each mode.
RF2416 Bypass Mode Possibilities
Gain Select
(HB Mode)
VCC1_HB and
VCC2_HB (V)
HB BIAS (V)
Current (mA)
2.7
2.7
0
2.78
2.78
1.4
1.9
4
2.7
Gain Select
(LB Mode)
LB BIAS (V)
VCC1_LB (V)
Current (mA)
2.7
2.7
0
2.78
2.78
0.8
1.5
2.7
For both Bypass configurations, the select pin for the appropriate band must be placed at a level greater than or equal to
1.8V. The difference between the Bypass possibilities is determined by the specific application’s ability to change the
voltage of the bias pins independently of VCC. The advantage of the ability to assert the bias pins to 0V when in Bypass
mode is shown by the decreased current draw when in this Bypass configuration.
4-204
Rev A2 010810
Preliminary
RF2416
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
VCC1 HB
VCC1 HB
C14
100 pF
C12
100 pF
C13
0.1 µF
L6
3.3 nH
C11
0.1 µF
L5
1.0 nH
L7
1.0 nH
L1
47 nH
L4
3.3 nH
C1
33 nF
12
11
10
4
50 Ω µstrip
J1
HB IN
J4
HB OUT
1
2
3
9
8
7
50 Ω µstrip
50 Ω µstrip
C10
0.7 pF
R1
0 Ω
Logic
Control
HB BIAS
HB SELECT
C2
0.1 µF
C9
0.1 µF
C8
0.1 µF
4
5
6
LB SELECT
C3
0.1 µF
J3
LB OUT
2416310, rev. 3
R2
0 Ω
50 Ω µstrip
C7
2.0 pF
L3
8.2 nH
C5
0.1 µF
LB BIAS
R3
L2
0 Ω
6.8 nH
C6
100 pF
50 Ω µstrip
J2
LB IN
C4
33 nF
VCC1 LB
P1
P2
P3
1
2
1
2
1
2
3
P1-1
P1-3
HB BIAS P2-1
GND
HB SELECT P3-1
GND
VCC1 HB
GND
LB BIAS P2-3
LB SELECT P3-3
VCC1 LB
3
3
CON3
CON3
CON3
Rev A2 010810
4-205
Preliminary
RF2416
Evaluation Board Layout
Board Size 2” x 2”
Board Thickness 0.060”, Board Material FR-4, Multi-Layer
4
4-206
Rev A2 010810
Preliminary
RF2416
Low Band Bypass Mode (S11)
Low Band Bypass Mode (S22)
Swp Max
6GHz
Swp Max
6GHz
5 GHz
0
.
4
10 MHz
10 MHz
4
950 MHz
4.5 GHz
950 MHz
5.5 GHz
4 GHz
3 GHz
1.5 GHz
4 GHz
Swp Min
0.01GHz
Swp Min
0.01GHz
Low Band High Gain Mode (S11)
Low Band High Gain Mode (S22)
Swp Max
Swp Max
6GHz
6GHz
5 GHz
0
0
.
.
4
4
5.5 GHz
4 GHz
10 MHz
5 GHz
10 MHz
4.5 GHz
3.5 GHz
500 MHz
3.5 GHz
500 MHz
950 MHz
3 GHz
950 MHz
1.5 GHz
2 GHz
Swp Min
0.01GHz
Swp Min
0.01GHz
Rev A2 010810
4-207
Preliminary
RF2416
High Band Bypass Mode (S11)
High Band Bypass Mode (S22)
Swp Max
6GHz
Swp Max
6GHz
0
.
0
.
4
4
1850 MHz
10 MHz
10 MHz
1 GHz
4
4 GHz
2 GHz
500 MHz
4.5 GHz
5 GHz
4 GHz
1.5 GHz
1850 MHz
3 GHz
1 GHz
Swp Min
0.01GHz
Swp Min
0.01GHz
High Band High Gain Mode (S11)
High Band High Gain Mode (S22)
Swp Max
6GHz
Swp Max
6GHz
0
.
0
.
4
4
4 GHz
10 MHz
4.5 GHz
10 MHz
GHz
500 MHz
2 GHz
2.5 GHz
4 GHz
3
3.5 GHz
1 GHz
1 GHz
1850 MHz
1850 MHz
1.5 GHz
Swp Min
0.01GHz
Swp Min
0.01GHz
S-Parameter Conditions:
All plots shown were taken at VCC=2.78V and Ambient Temperature=25°C.
Note:
All S11 and S22 plots shown were taken from an RF2416 while on a 2416310 evaluation board. The data was captured without the exter-
nal input or output tuning components in place, and the reference point at the HB IN and HB OUT pins for high band and LB IN and LB
OUT for low band.
4-208
Rev A2 010810
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