NTHD5902T1/D [ETC]
Power MOSFET Dual N-Channel ChipFET? ; 功率MOSFET双N沟道ChipFET ？\n
| 型号： | NTHD5902T1/D |
| 厂家： | 
ETC |
| 描述： | Power MOSFET Dual N-Channel ChipFET?
|
| 文件： | 总8页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTHD5902T1
Power MOSFET
Dual N-Channel ChipFETE
2.9 Amps, 30 Volts
Features
http://onsemi.com
• Low R
for Higher Efficiency
DS(on)
• Miniature ChipFET Surface Mount Package Saves Board Space
DUAL N–CHANNEL
2.9 AMPS, 30 VOLTS
Applications
• Power Management in Portable and Battery–Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
R
DS(on) = 85 mW
D
D
2
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Steady
State
Rating
Symbol
5 secs
Unit
V
Drain–Source Voltage
Gate–Source Voltage
Continuous Drain Current
V
DS
30
G
2
G
1
V
GS
"20
V
I
D
A
S
S
1
2
(T = 150°C) (Note 1.)
J
T = 25°C
T = 85°C
A
"3.9
"2.8
"2.9
"2.1
A
N–Channel MOSFET
N–Channel MOSFET
Pulsed Drain Current
I
"10
A
A
DM
Continuous Source Current
(Diode Conduction) (Note 1.)
I
S
1.8
0.9
Maximum Power Dissipation
(Note 1.)
P
D
W
T = 25°C
T = 85°C
A
2.1
1.1
1.1
0.6
A
ChipFET
CASE 1206A
STYLE 2
Operating Junction and Storage
Temperature Range
T , T
–55 to +150
°C
J
stg
1. Surface Mounted on 1″ x 1″ FR4 Board.
MARKING
DIAGRAM
PIN CONNECTIONS
8
7
6
5
1
2
3
4
D
D
D
D
S
1
2
3
4
8
7
6
5
1
1
2
2
1
G
S
1
2
G
2
A6 = Specific Device Code
ORDERING INFORMATION
Device
NTHD5902T1
Package
Shipping
3000/Tape & Reel
ChipFET
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
May, 2001 – Rev. 1
NTHD5902T1/D
NTHD5902T1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Maximum Junction–to–Ambient (Note 2.)
R
°C/W
thJA
t v 5 sec
Steady State
50
90
60
110
Maximum Junction–to–Foot
Steady State
R
30
40
°C/W
thJF
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
V
= V , I = 250 µA
1.0
–
–
–
–
–
–
"100
1.0
V
GS(th)
DS
GS
D
Gate–Body Leakage
I
V
DS
= 0 V, V = "20 V
nA
µA
GSS
GS
Zero Gate Voltage Drain Current
I
V
= 24 V, V = 0 V
–
DSS
DS
DS
GS
V
= 24 V, V = 0 V,
–
5.0
GS
T = 85°C
J
On–State Drain Current (Note 3.)
I
V
w 5.0 V, V = 10 V
10
–
–
–
A
D(on)
DS
GS
Drain–Source On–State Resistance (Note 3.)
r
V
= 10 V, I = 2.9 A
0.072
0.120
20
0.085
0.143
–
Ω
DS(on)
GS
GS
D
V
= 4.5 V, I = 2.2 A
–
D
Forward Transconductance (Note 3.)
Diode Forward Voltage (Note 3.)
g
fs
V
= 15 V, I = 2.9 A
–
S
V
DS
D
V
I
S
= 0.9 A, V = 0 V
–
0.8
1.2
SD
GS
Dynamic (Note 4.)
Total Gate Charge
Q
–
–
–
–
–
–
–
–
5.0
0.8
1.0
7.0
12
7.5
–
nC
ns
g
V
= 15 V, V = 10 V,
GS
DS
Gate–Source Charge
Gate–Drain Charge
Turn–On Delay Time
Rise Time
Q
gs
Q
gd
I
D
= 2.9 A
–
t
11
18
18
11
80
d(on)
V
= 15 V, R = 15 Ω
L
DD
t
r
I
D
^ 1.0 A, V
= 10 V,
GEN
Turn–Off Delay Time
Fall Time
t
12
d(off)
R
= 6 Ω
G
t
f
7.0
40
Source–Drain Reverse Recovery Time
t
rr
I = 0.9 A, di/dt = 100 A/µs
F
2. Surface Mounted on 1″ x 1″ FR4 Board.
3. Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2%.
4. Guaranteed by design, not subject to production testing.
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2
NTHD5902T1
TYPICAL ELECTRICAL CHARACTERISTICS
10
8
10
V
= 10
GS
thru 5 V
8
6
4
2
0
6
4 V
4
125°C
2
25°C
3 V
T
C
= –55°C
0
0
0.5
V
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
, Drain–to–Source Voltage (V)
V
GS
, Gate–to–Source Voltage (V)
DS
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
0.20
400
300
C
iss
0.15
0.10
0.05
0
V
= 4.5 V
GS
200
V
GS
= 10 V
C
oss
100
0
C
rss
0
2
4
6
8
10
0
4
8
12
16
20
V
DS
, Drain–to–Source Voltage (V)
I , Drain Current (A)
D
Figure 3. On–Resistance vs. Drain Current
Figure 4. Capacitance
1.8
1.6
1.4
1.2
1.0
0.8
10
V
= 10 V
= 2.9 A
GS
V
= 15 V
= 2.9 A
DS
I
D
8
6
4
2
0
I
D
0.6
–50
0
1
2
3
4
5
–25
0
25
50
75
100
125 150
Q
Total Gate Charge (nC)
T , Junction Temperature (°C)
J
g,
Figure 5. Gate Charge
Figure 6. On–Resistance vs.
Junction Temperature
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3
NTHD5902T1
TYPICAL ELECTRICAL CHARACTERISTICS
0.20
10
0.15
0.10
I
D
= 2.9 A
T = 150°C
J
T = 25°C
J
0.05
0
1
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, Gate–to–Source Voltage (V)
V
DS
, Drain–to–Source Voltage (V)
Figure 7. Source–Drain Diode Forward Voltage
Figure 8. On–Resistance vs. Gate–to–Source
Voltage
0.4
0.2
50
40
30
I
D
= 250 µA
–0.0
–0.2
–0.4
–0.6
–0.8
20
10
0
–4
–3
10
–2
10
–1
–50
–25
0
25
50
75
100
125
150
10
10
1
10
100 600
T , Temperature (°C)
J
Time (sec)
Figure 9. Threshold Voltage
Figure 10. Single Pulse Power
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4
NTHD5902T1
TYPICAL ELECTRICAL CHARACTERISTICS
2
1
Duty Cycle = 0.5
Notes:
P
DM
0.2
t
1
0.1
t
2
1
2
0.1
t
0.05
0.02
1. Duty Cycle, D =
t
2. Per Unit Base = R
= 90°C/W
thJA
(t)
3. T
T = P
A
Z
JM –
DM thJA
Single Pulse
4. Surface Mounted
0.01
–4
–3
10
–2
10
–1
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance, Junction–to–Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–4
–3
10
–2
10
–1
10
10
Square Wave Pulse Duration (sec)
1
10
Figure 12. Normalized Thermal Transient Impedance, Junction–to–Foot
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5
NTHD5902T1
Notes
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6
NTHD5902T1
PACKAGE DIMENSIONS
CHIPFET
CASE 1206A–01
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM
PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN
HORIZONTAL AND VERTICAL SHALL NOT EXCEED
0.08 MM.
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE
BURRS.
A
M
K
8
1
7
2
6
3
5
4
5
4
6
3
7
2
8
1
S
B
6. NO MOLD FLASH ALLOWED ON THE TOP AND
BOTTOM LEAD SURFACE.
L
D
J
MILLIMETERS
INCHES
G
DIM MIN
MAX
MIN
0.116
MAX
0.122
0.067
0.043
0.014
A
B
C
D
G
J
2.95
1.55
1.00
0.25
3.10
1.70 0.061
1.10 0.039
0.35 0.010
0.65 BSC
0.025 BSC
0.10
0.30
0.15 0.004
0.45 0.012
0.008
0.018
0.022 BSC
C
K
L
0.55 BSC
5 ° NOM
--- 1.80
M
S
5 ° NOM
0.05 (0.002)
---
0.071
STYLE 2:
PIN 1. SOURCE 1
2. GATE 1
3. SOURCE
4. GATE 2
5. DRAIN 1
6. DRAIN 1
7. DRAIN 2
8. DRAIN 2
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7
NTHD5902T1
ChipFET is a trademark of Vishay Siliconix
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NTHD5902T1/D
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