NTHD5903T1/D [ETC]
Power MOSFET Dual P-Channel ChipFET? ; 功率MOSFET的双P通道ChipFET ？\n
| 型号： | NTHD5903T1/D |
| 厂家： | 
ETC |
| 描述： | Power MOSFET Dual P-Channel ChipFET?
|
| 文件： | 总8页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTHD5903T1
Power MOSFET
Dual P-Channel ChipFETE
2.1 Amps, 20 Volts
Features
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• Low R
for Higher Efficiency
DS(on)
• Logic Level Gate Drive
• Miniature ChipFET Surface Mount Package Saves Board Space
DUAL P–CHANNEL
2.1 AMPS, 20 VOLTS
Applications
• Power Management in Portable and Battery–Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
R
DS(on) = 155 mW
S
S
1
2
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Steady
State
G
G
2
1
Rating
Symbol
5 secs
Unit
V
Drain–Source Voltage
Gate–Source Voltage
Continuous Drain Current
V
V
–20
DS
GS
"12
"10
V
D
D
2
1
I
A
D
(T = 150°C) (Note 1.)
J
P–Channel MOSFET
P–Channel MOSFET
T = 25°C
"2.9
"2.1
"2.1
"1.5
A
T = 85°C
A
Pulsed Drain Current
I
A
A
DM
Continuous Source Current
(Diode Conduction) (Note 1.)
I
–1.8
–0.9
S
Maximum Power Dissipation
(Note 1.)
P
D
W
ChipFET
CASE 1206A
STYLE 2
T = 25°C
2.1
1.1
1.1
0.6
A
T = 85°C
A
Operating Junction and Storage
Temperature Range
T , T
–55 to +150
°C
J
stg
MARKING
DIAGRAM
1. Surface Mounted on 1″ x 1″ FR4 Board.
PIN CONNECTIONS
8
7
6
5
1
2
3
4
D
D
D
D
S
1
1
2
3
4
8
7
6
5
1
1
2
2
G
S
1
2
G
2
A7 = Specific Device Code
ORDERING INFORMATION
Device
NTHD5903T1
Package
Shipping
3000/Tape & Reel
ChipFET
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
May, 2001 – Rev. 1
NTHD5903T1/D
NTHD5903T1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Maximum Junction–to–Ambient (Note 2.)
R
°C/W
thJA
t v 5 sec
Steady State
50
90
60
110
Maximum Junction–to–Foot (Drain)
Steady State
R
30
40
°C/W
thJF
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
V
= V , I = –250 µA
–0.6
–
–
–
–
–
V
GS(th)
DS
GS
D
Gate–Body Leakage
I
V
= 0 V, V = "12 V
–
–
–
"100
–1.0
–5.0
nA
µA
GSS
DS
GS
Zero Gate Voltage Drain Current
I
V
= –16 V, V = 0 V
GS
DSS
DS
DS
V
= –16 V, V = 0 V,
GS
T = 85°C
J
On–State Drain Current (Note 3.)
I
V
v –5.0 V, V = –4.5 V
–10
–
–
–
A
D(on)
DS
GS
Drain–Source On–State Resistance (Note 3.)
r
V
V
V
= –4.5 V, I = –2.1 A
0.130
0.150
0.215
5.0
0.155
0.180
0.260
–
Ω
DS(on)
GS
GS
GS
D
= –3.6 V, I = –2.0 A
–
D
= –2.5 V, I = –1.7 A
–
D
Forward Transconductance (Note 3.)
Diode Forward Voltage (Note 3.)
g
fs
V
= –10 V, I = –2.1 A
–
S
V
DS
D
V
I
= –0.9 A, V = 0 V
–
–0.8
–1.2
SD
S
GS
Dynamic (Note 4.)
Total Gate Charge
Q
–
–
–
–
–
–
–
–
3.0
0.9
0.6
13
35
25
25
40
6.0
–
nC
ns
g
V
= –10 V, V = –4.5 V,
GS
DS
Gate–Source Charge
Gate–Drain Charge
Turn–On Delay Time
Rise Time
Q
gs
Q
gd
I
D
= –2.1 A
–
t
20
55
40
40
80
d(on)
V
= –10 V, R = 10 Ω
L
DD
t
r
I
D
^ –1.0 A, V
= –4.5 V,
GEN
Turn–Off Delay Time
Fall Time
t
d(off)
R
= 6 Ω
G
t
f
Source–Drain Reverse Recovery Time
t
rr
I = –0.9 A, di/dt = 100 A/µs
F
2. Surface Mounted on 1″ x 1″ FR4 Board.
3. Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2%.
4. Guaranteed by design, not subject to production testing.
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2
NTHD5903T1
TYPICAL ELECTRICAL CHARACTERISTICS
10
8
10
V
GS
= 4 V – 10 V
3.6 V
125°C
8
6
4
3.4 V
3 V
25°C
T
C
= –55°C
T = 25°C
J
6
2.8 V
2.6 V
2.4 V
4
V
GS
= 1.4 V
2
0
2
0
2.2 V
1.8 V
0
1
2
3
4
5
6
0
1
2
3
4
5
V
GS
, GATE–TO–SOURCE VOLTAGE (VOLTS)
–V , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
DS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
0.4
4
3
2
T = 25°C
J
I
= –2.1 A
D
0.35
0.3
T = 25°C
J
V
GS
= –2.5 V
0.25
0.2
V
= –3.6 V
= –4.5 V
GS
0.15
1
0
V
GS
0.1
0.05
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
–V , GATE–TO–SOURCE VOLTAGE (VOLTS)
GS
–I DRAIN CURRENT (AMPS)
D,
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 3. On–Resistance versus
Gate–to–Source Voltage
1.6
1.4
1.2
1
1.0E–6
1.0E–7
I
V
= –2.1 A
V
GS
= 0 V
D
= –4.5 V
GS
T = 150°C
J
T = 100°C
J
1.0E–8
1.0E–9
T = 25°C
J
1.0E–10
1.0E–11
0.8
0.6
–50 –25
0
25
50
75
100
125 150
0
4
8
12
16
20
T , JUNCTION TEMPERATURE (°C)
J
–V , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
DS
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–to–Source Leakage Current
versus Voltage
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3
NTHD5903T1
TYPICAL ELECTRICAL CHARACTERISTICS
600
500
400
300
200
6
6
5
4
3
2
V
DS
= 0 V
V
= 0 V
GS
C
C
T = 25°C
iss
rss
J
QT
5
4
3
2
–V
DS
–V
GS
Q1
Q2
1.5
C
oss
100
0
I
D
= –2.1 A
1
0
1
0
T = 25°C
J
–12 –8
–4
0
4
8
12
16
20
0
0.5
1
2
2.5
3
3.5
4
V
GS
V
DS
Q , TOTAL GATE CHARGE (nC)
g
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 8. Gate–to–Source and
Drain–to–Source Voltage versus Total Charge
Figure 7. Capacitance Variation
100
5
V
I
= –10 V
= –1.0 A
= –4.5 V
V
GS
= 0 V
DD
t
d(off)
T = 25°C
J
D
t
f
V
GS
4
3
2
t
r
t
d(on)
10
1
0
1
1
10
R , GATE RESISTANCE (OHMS)
100
0
0.2
0.4
0.6
0.8
1
1.2
V
, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
G
SD
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
2
1
Duty Cycle = 0.5
0.2
Notes:
P
DM
t
1
0.1
t
2
0.1
t
0.05
0.02
1
1. Duty Cycle, D =
t
2
thJA
(t)
2. Per Unit Base = R
= 90°C/W
3. T
T = P
A
Z
JM –
DM thJA
Single Pulse
4. Surface Mounted
0.01
–4
–3
10
–2
10
–1
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance, Junction–to–Ambient
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4
NTHD5903T1
Notes
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5
NTHD5903T1
Notes
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6
NTHD5903T1
PACKAGE DIMENSIONS
CHIPFET
CASE 1206A–01
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM
PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN
HORIZONTAL AND VERTICAL SHALL NOT EXCEED
0.08 MM.
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE
BURRS.
A
M
K
8
1
7
2
6
3
5
4
5
4
6
3
7
2
8
1
S
B
6. NO MOLD FLASH ALLOWED ON THE TOP AND
BOTTOM LEAD SURFACE.
L
D
J
MILLIMETERS
INCHES
G
DIM MIN
MAX
MIN
0.116
MAX
0.122
0.067
0.043
0.014
A
B
C
D
G
J
2.95
1.55
1.00
0.25
3.10
1.70 0.061
1.10 0.039
0.35 0.010
0.65 BSC
0.025 BSC
0.10
0.30
0.15 0.004
0.45 0.012
0.008
0.018
0.022 BSC
C
K
L
0.55 BSC
5 ° NOM
--- 1.80
M
S
5 ° NOM
0.05 (0.002)
---
0.071
STYLE 2:
PIN 1. SOURCE 1
2. GATE 1
3. SOURCE
4. GATE 2
5. DRAIN 1
6. DRAIN 1
7. DRAIN 2
8. DRAIN 2
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7
NTHD5903T1
ChipFET is a trademark of Vishay Siliconix
ON Semiconductor and
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NTHD5903T1/D
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