NTHD5905T1 [ETC]
TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 8V V(BR)DSS | 3A I(D) | LLCC ; 晶体管| MOSFET |匹配对| P- CHANNEL | 8V V（ BR ） DSS | 3A I（ D） | LLCC\n
| 型号： | NTHD5905T1 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 8V V(BR)DSS | 3A I(D) | LLCC
|
| 文件： | 总8页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTHD5905T1
Power MOSFET
Dual P-Channel ChipFETt
3.0 Amps, 8 Volts
Features
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• Low R
for Higher Efficiency
DS(on)
• Logic Level Gate Drive
• Miniature ChipFET Surface Mount Package
DUAL P–CHANNEL
3.0 AMPS, 8 VOLTS
RDS(on) = 90 mW
Applications
• Power Management in Portable and Battery–Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
S
S
2
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
G
G
2
1
Steady
State
Rating
Symbol
5 secs
–8.0
"8.0
Unit
V
Drain–Source Voltage
Gate–Source Voltage
Continuous Drain Current
V
DS
V
GS
V
D
D
2
1
I
D
A
(T = 150°C) (Note 1)
J
P–Channel MOSFET
P–Channel MOSFET
T = 25°C
"4.1
"2.9
"3.0
"2.2
A
T = 85°C
A
Pulsed Drain Current
I
"10
A
A
DM
Continuous Source Current
(Diode Conduction) (Note 1)
I
S
–1.8
–0.9
Maximum Power Dissipation
(Note 1)
P
D
W
ChipFET
T = 25°C
T = 85°C
A
2.1
1.1
1.1
0.6
CASE 1206A
STYLE 2
A
Operating Junction and Storage
Temperature Range
T , T
–55 to +150
°C
J
stg
MARKING
DIAGRAM
1. Surface Mounted on 1″ x 1″ FR4 Board.
PIN CONNECTIONS
8
7
6
5
1
2
3
4
D
S
G
S
1
2
3
4
8
7
6
5
1
1
2
2
1
1
2
2
D
D
D
G
A9 = Specific Device Code
ORDERING INFORMATION
Device
NTHD5905T1
Package
Shipping
3000/Tape & Reel
ChipFET
Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
March, 2002 – Rev. 2
NTHD5905T1/D
NTHD5905T1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Maximum Junction–to–Ambient (Note 2)
R
°C/W
thJA
t v 5 sec
Steady State
50
90
60
110
Maximum Junction–to–Foot (Drain)
Steady State
R
30
40
°C/W
thJF
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
V
= V , I = –250 mA
–0.45
–
–
–
–
–
V
GS(th)
DS
GS
D
Gate–Body Leakage
I
V
DS
= 0 V, V = "8.0 V
–
–
–
"100
–1.0
–5.0
nA
mA
GSS
GS
Zero Gate Voltage Drain Current
I
V
= –6.4 V, V = 0 V
GS
DSS
DS
DS
V
= –6.4 V, V = 0 V,
GS
T = 85°C
J
On–State Drain Current (Note 3)
I
V
v –5.0 V, V = –4.5 V
–10
–
–
–
A
D(on)
DS
GS
Drain–Source On–State Resistance (Note 3)
r
V
V
V
V
= –4.5 V, I = –3.0 A
0.075
0.110
0.150
7.0
0.090
0.130
0.180
–
W
DS(on)
GS
GS
GS
DS
D
= –2.5 V, I = –2.5 A
–
D
= –1.8 V, I = –1.0 A
–
D
Forward Transconductance (Note 3)
Diode Forward Voltage (Note 3)
g
fs
= –5.0 V, I = –3.0 A
–
S
V
D
V
I
= –0.9 A, V = 0 V
–
–0.8
–1.2
SD
S
GS
Dynamic (Note 4)
Total Gate Charge
Q
–
–
–
–
–
–
–
–
5.5
0.5
1.5
10
45
30
10
30
9.0
–
nC
ns
g
V
= –4.0 V, V = –4.5 V,
GS
DS
Gate–Source Charge
Gate–Drain Charge
Turn–On Delay Time
Rise Time
Q
gs
Q
gd
I
D
= –3.0 A
–
t
15
70
45
15
60
d(on)
V
= –4.0 V, R = 4 W
L
DD
t
r
I
D
^ –1.0 A, V
= –4.5 V,
GEN
Turn–Off Delay Time
Fall Time
t
d(off)
R
= 6 W
G
t
f
I = –0.9 A, di/dt = 100 A/ms
F
Source–Drain Reverse Recovery Time
t
rr
2. Surface Mounted on 1″ x 1″ FR4 Board.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Guaranteed by design, not subject to production testing.
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2
NTHD5905T1
TYPICAL ELECTRICAL CHARACTERISTICS
10
8
10
T
C
= –55°C
2.5 V
V
= 5
GS
thru 3 V
25°C
8
2 V
125°C
6
4
2
0
6
4
1.5 V
2
1 V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
10
6
–V , Drain–to–Source Voltage (V)
–V , Gate–to–Source Voltage (V)
DS
GS
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
0.30
0.25
0.20
0.15
0.10
0.05
0
1000
800
600
400
200
0
V
GS
= 1.8 V
C
iss
V
GS
= 2.5 V
V
GS
= 4.5 V
C
oss
C
rss
2
4
6
8
0
4
8
12
16
20
–V , Drain–to–Source Voltage (V)
DS
–I , Drain Current (A)
D
Figure 3. On–Resistance vs. Drain Current
Figure 4. Capacitance
5
1.6
1.4
1.2
1.0
0.8
V
GS
= 4.5 V
= 3 A
I
D
4
3
2
1
0
0.6
–50
1
2
3
4
5
–25
0
25
50
75
100
125 150
Q
Total Gate Charge (nC)
T , Junction Temperature (°C)
J
g,
Figure 5. Gate Charge
Figure 6. On–Resistance vs.
Junction Temperature
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3
NTHD5905T1
TYPICAL ELECTRICAL CHARACTERISTICS
0.25
10
0.20
0.15
0.10
0.05
I
D
= 3 A
T = 150°C
J
T = 25°C
J
0
1
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
–V , Gate–to–Source Voltage (V)
GS
–V , Drain–to–Source Voltage (V)
DS
Figure 7. Source Diode Forward Voltage
Figure 8. On–Resistance vs. Gate–to–Source
Voltage
0.4
0.3
50
40
30
I
D
= 250 mA
0.2
0.1
20
10
0
0.0
–0.1
–0.2
–4
–3
10
–2
10
–1
–50
–25
0
25
50
75
100
125
150
10
10
1
10
100 600
T , Temperature (°C)
J
Time (sec)
Figure 9. Threshold Voltage
Figure 10. Single Pulse Power
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4
NTHD5905T1
TYPICAL ELECTRICAL CHARACTERISTICS
2
1
Duty Cycle = 0.5
Notes:
P
DM
0.2
t
1
0.1
t
2
1
2
0.1
t
0.05
0.02
1. Duty Cycle, D =
t
2. Per Unit Base = R
= 90°C/W
thJA
(t)
3. T
T = P
A
Z
JM –
DM thJA
Single Pulse
4. Surface Mounted
0.01
–4
–3
10
–2
10
–1
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance, Junction–to–Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–4
–3
10
–2
10
–1
10
10
Square Wave Pulse Duration (sec)
1
10
Figure 12. Normalized Thermal Transient Impedance, Junction–to–Foot
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5
NTHD5905T1
Notes
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6
NTHD5905T1
PACKAGE DIMENSIONS
ChipFET
CASE 1206A–03
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM
PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN
HORIZONTAL AND VERTICAL SHALL NOT EXCEED
0.08 MM.
A
M
K
8
1
7
2
6
3
5
4
5
4
6
3
7
2
8
1
S
B
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE
BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP AND
BOTTOM LEAD SURFACE.
7. 1206A-01 AND 1206A-02 OBSOLETE. NEW
STANDARD IS 1206A-03.
L
D
J
G
MILLIMETERS
INCHES
DIM MIN
MAX
MIN
0.116
MAX
0.122
0.067
0.043
0.014
A
B
C
D
G
J
2.95
1.55
1.00
0.25
3.10
STYLE 2:
1.70 0.061
1.10 0.039
0.35 0.010
PIN 1. SOURCE 1
2. GATE 1
C
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
0.65 BSC
0.025 BSC
0.05 (0.002)
0.10
0.28
0.20 0.004
0.42 0.011
0.008
0.017
0.022 BSC
K
L
0.55 BSC
5 ° NOM
1.80 2.00
M
S
5 ° NOM
0.072
0.080
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7
NTHD5905T1
ChipFET is a trademark of Vishay Siliconix.
ON Semiconductor is a trademark and
is a registered trademark of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right
to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products
for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any
and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must
be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
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For additional information, please contact your local
Sales Representative.
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NTHD5905T1/D
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