NTHD5903T1 [ONSEMI]
Power MOSFET Dual P-Channel ChipFET; 功率MOSFET的双P通道ChipFET
| 型号： | NTHD5903T1 |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET Dual P-Channel ChipFET |
| 文件： | 总8页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTHD5903T1
Power MOSFET
Dual P-Channel ChipFETE
2.1 Amps, 20 Volts
Features
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• Low R
for Higher Efficiency
DS(on)
• Logic Level Gate Drive
• Miniature ChipFET Surface Mount Package Saves Board Space
DUAL P–CHANNEL
2.1 AMPS, 20 VOLTS
Applications
• Power Management in Portable and Battery–Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
R
DS(on) = 155 mW
S
S
1
2
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Steady
State
G
G
2
1
Rating
Symbol
5 secs
Unit
V
Drain–Source Voltage
Gate–Source Voltage
Continuous Drain Current
V
V
–20
DS
GS
"12
"10
V
D
D
2
1
I
A
D
(T = 150°C) (Note 1)
J
P–Channel MOSFET
P–Channel MOSFET
T = 25°C
"2.9
"2.1
"2.1
"1.5
A
T = 85°C
A
Pulsed Drain Current
I
A
A
DM
Continuous Source Current
(Diode Conduction) (Note 1)
I
–1.8
–0.9
S
Maximum Power Dissipation
(Note 1)
P
D
W
ChipFET
CASE 1206A
STYLE 2
T = 25°C
2.1
1.1
1.1
0.6
A
T = 85°C
A
Operating Junction and Storage
Temperature Range
T , T
–55 to +150
°C
J
stg
MARKING
DIAGRAM
1. Surface Mounted on 1″ x 1″ FR4 Board.
PIN CONNECTIONS
8
7
6
5
1
2
3
4
D
D
D
D
S
1
1
2
3
4
8
7
6
5
1
1
2
2
G
S
1
2
G
2
A7 = Specific Device Code
ORDERING INFORMATION
Device
NTHD5903T1
Package
Shipping
3000/Tape & Reel
ChipFET
Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
March, 2002 – Rev. 2
NTHD5903T1/D
NTHD5903T1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Maximum Junction–to–Ambient (Note 2)
R
°C/W
thJA
t v 5 sec
Steady State
50
90
60
110
Maximum Junction–to–Foot (Drain)
Steady State
R
30
40
°C/W
thJF
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
V
= V , I = –250 mA
–0.6
–
–
–
–
–
V
GS(th)
DS
GS
D
Gate–Body Leakage
I
V
= 0 V, V = "12 V
–
–
–
"100
–1.0
–5.0
nA
mA
GSS
DS
GS
Zero Gate Voltage Drain Current
I
V
= –16 V, V = 0 V
GS
DSS
DS
DS
V
= –16 V, V = 0 V,
GS
T = 85°C
J
On–State Drain Current (Note 3)
I
V
v –5.0 V, V = –4.5 V
–10
–
–
–
A
D(on)
DS
GS
Drain–Source On–State Resistance (Note 3)
r
V
V
V
= –4.5 V, I = –2.1 A
0.130
0.150
0.215
5.0
0.155
0.180
0.260
–
W
DS(on)
GS
GS
GS
D
= –3.6 V, I = –2.0 A
–
D
= –2.5 V, I = –1.7 A
–
D
Forward Transconductance (Note 3)
Diode Forward Voltage (Note 3)
g
fs
V
= –10 V, I = –2.1 A
–
S
V
DS
D
V
I
= –0.9 A, V = 0 V
–
–0.8
–1.2
SD
S
GS
Dynamic (Note 4)
Total Gate Charge
Q
–
–
–
–
–
–
–
–
3.0
0.9
0.6
13
35
25
25
40
6.0
–
nC
ns
g
V
= –10 V, V = –4.5 V,
GS
DS
Gate–Source Charge
Gate–Drain Charge
Turn–On Delay Time
Rise Time
Q
gs
Q
gd
I
D
= –2.1 A
–
t
20
55
40
40
80
d(on)
V
= –10 V, R = 10 W
L
DD
t
r
I
D
^ –1.0 A, V
= –4.5 V,
GEN
Turn–Off Delay Time
Fall Time
t
d(off)
R
= 6 W
G
t
f
I = –0.9 A, di/dt = 100 A/ms
F
Source–Drain Reverse Recovery Time
t
rr
2. Surface Mounted on 1″ x 1″ FR4 Board.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Guaranteed by design, not subject to production testing.
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2
NTHD5903T1
TYPICAL ELECTRICAL CHARACTERISTICS
10
8
10
V
GS
= 4 V – 10 V
3.6 V
125°C
8
6
4
3.4 V
3 V
25°C
T
C
= –55°C
T = 25°C
J
6
2.8 V
2.6 V
2.4 V
4
V
GS
= 1.4 V
2
0
2
0
2.2 V
1.8 V
0
1
2
3
4
5
6
0
1
2
3
4
5
V
GS
, GATE–TO–SOURCE VOLTAGE (VOLTS)
–V , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
DS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
0.4
4
3
2
T = 25°C
J
I
= –2.1 A
D
0.35
0.3
T = 25°C
J
V
GS
= –2.5 V
0.25
0.2
V
= –3.6 V
= –4.5 V
GS
0.15
1
0
V
GS
0.1
0.05
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
–V , GATE–TO–SOURCE VOLTAGE (VOLTS)
GS
–I DRAIN CURRENT (AMPS)
D,
Figure 4. On–Resistance vs. Drain Current and
Gate Voltage
Figure 3. On–Resistance vs. Gate–to–Source
Voltage
1.6
1.4
1.2
1
1.0E–6
1.0E–7
I
V
= –2.1 A
V
GS
= 0 V
D
= –4.5 V
GS
T = 150°C
J
T = 100°C
J
1.0E–8
1.0E–9
T = 25°C
J
1.0E–10
1.0E–11
0.8
0.6
–50 –25
0
25
50
75
100
125 150
0
4
8
12
16
20
T , JUNCTION TEMPERATURE (°C)
J
–V , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
DS
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–to–Source Leakage Current
vs. Voltage
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3
NTHD5903T1
TYPICAL ELECTRICAL CHARACTERISTICS
600
500
400
300
200
6
6
5
4
3
2
V
DS
= 0 V
V
= 0 V
GS
C
C
T = 25°C
iss
rss
J
QT
5
4
3
2
–V
DS
–V
GS
Q1
Q2
1.5
C
oss
100
0
I
D
= –2.1 A
1
0
1
0
T = 25°C
J
–12 –8
–4
0
4
8
12
16
20
0
0.5
1
2
2.5
3
3.5
4
V
GS
V
DS
Q , TOTAL GATE CHARGE (nC)
g
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 8. Gate–to–Source and
Drain–to–Source Voltage vs. Total Charge
Figure 7. Capacitance Variation
100
5
4
3
2
V
I
= –10 V
= –1.0 A
= –4.5 V
V
GS
= 0 V
DD
t
d(off)
T = 25°C
J
D
t
f
V
GS
t
r
t
d(on)
10
1
0
1
1
10
R , GATE RESISTANCE (OHMS)
100
0
0.2
0.4
0.6
0.8
1
1.2
V
, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
G
SD
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
2
1
Duty Cycle = 0.5
0.2
Notes:
P
DM
t
1
0.1
t
2
0.1
t
0.05
0.02
1
1. Duty Cycle, D =
t
2
thJA
(t)
2. Per Unit Base = R
= 90°C/W
3. T
T = P
A
Z
JM –
DM thJA
Single Pulse
4. Surface Mounted
0.01
–4
–3
10
–2
10
–1
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance, Junction–to–Ambient
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4
NTHD5903T1
Notes
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5
NTHD5903T1
Notes
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6
NTHD5903T1
PACKAGE DIMENSIONS
ChipFET
CASE 1206A–03
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM
PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN
HORIZONTAL AND VERTICAL SHALL NOT EXCEED
0.08 MM.
A
M
K
8
1
7
2
6
3
5
4
5
4
6
3
7
2
8
1
S
B
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE
BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP AND
BOTTOM LEAD SURFACE.
7. 1206A-01 AND 1206A-02 OBSOLETE. NEW
STANDARD IS 1206A-03.
L
D
J
G
MILLIMETERS
INCHES
DIM MIN
MAX
MIN
0.116
MAX
0.122
0.067
0.043
0.014
A
B
C
D
G
J
2.95
1.55
1.00
0.25
3.10
STYLE 2:
1.70 0.061
1.10 0.039
0.35 0.010
PIN 1. SOURCE 1
2. GATE 1
C
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
0.65 BSC
0.025 BSC
0.05 (0.002)
0.10
0.28
0.20 0.004
0.42 0.011
0.008
0.017
0.022 BSC
K
L
0.55 BSC
5 ° NOM
1.80 2.00
M
S
5 ° NOM
0.072
0.080
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NTHD5903T1
ChipFET is a trademark of Vishay Siliconix.
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is a registered trademark of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right
to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products
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and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must
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NTHD5903T1/D
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