NTB22N06LT4 [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 22A I(D) | TO-263AB ; 晶体管| MOSFET | N沟道| 60V V（ BR ） DSS | 22A I（ D） | TO- 263AB\n
| 型号： | NTB22N06LT4 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 22A I(D) | TO-263AB
|
| 文件： | 总8页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTP22N06L, NTB22N06L
Power MOSFET
22 Amps, 60 Volts, Logic Level
N–Channel TO–220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
http://onsemi.com
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
22 AMPERES
60 VOLTS
RDS(on) = 65 mΩ
N–Channel
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol Value
Unit
Drain–to–Source Voltage
V
V
60
60
Vdc
Vdc
Vdc
DSS
Drain–to–Gate Voltage (R = 10 MΩ)
G
GS
DGR
Gate–to–Source Voltage
– Continuous
4
V
V
"10
"20
GS
GS
S
– Non–Repetitive (t v10 ms)
p
4
Drain Current
1
2
– Continuous @ T = 25°C
I
22
10
66
Adc
Apk
A
D
– Continuous @ T = 100°C
I
D
3
A
– Single Pulse (t v10 µs)
I
DM
p
2
D PAK
TO–220AB
CASE 221A
STYLE 5
Total Power Dissipation @ T = 25°C
P
60
0.4
W
W/°C
A
D
CASE 418B
STYLE 2
Derate above 25°C
1
Operating and Storage Temperature Range
T , T
–55 to
+175
°C
2
J
stg
3
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Single Pulse Drain–to–Source Avalanche
E
AS
72
mJ
Energy – Starting T = 25°C
J
4
(V = 50 Vdc, V = 5.0 Vdc, L = 1.0 mH
DD
GS
4
Drain
I
= 12 A, V = 60 Vdc, R = 25 Ω)
DS G
L(pk)
Drain
Thermal Resistance
– Junction–to–Case
– Junction–to–Ambient
°C/W
°C
R
R
2.5
62.5
θ
JC
JA
θ
NTx22N06L
LLYWW
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T
260
L
NTx22N06L
LLYWW
2
1
Gate
3
1
Gate
3
Drain
Source
Source
NTx22N06L = Device Code
2
x
= P or B
Drain
LL
Y
= Location Code
= Year
WW
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTP22N06L
NTB22N06L
NTB22N06LT4
TO–220AB
50 Units/Rail
50 Units/Rail
2
D PAK
2
D PAK
800/Tape & Reel
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
August, 2001 – Rev. 0
NTP22N06L/D
NTP22N06L, NTB22N06L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (Note 1.)
(V = 0 Vdc, I = 250 µAdc)
V
Vdc
(BR)DSS
60
–
68.2
81
–
–
GS
D
Temperature Coefficient (Positive)
mV/°C
µAdc
Zero Gate Voltage Drain Current
I
DSS
(V = 60 Vdc, V = 0 Vdc)
–
–
–
–
1.0
10
DS
GS
(V = 60 Vdc, V = 0 Vdc, T = 150°C)
DS
GS
J
Gate–Body Leakage Current (V = ±15 Vdc, V = 0 Vdc)
I
–
–
±100
nAdc
Vdc
GS
DS
GSS
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage (Note 1.)
(V = V , I = 250 µAdc)
V
GS(th)
1.0
–
1.79
5.0
2.0
–
DS
GS
D
Threshold Temperature Coefficient (Negative)
mV/°C
mΩ
Static Drain–to–Source On–Resistance (Note 1.)
R
V
DS(on)
(V = 5.0 Vdc, I = 11 Adc)
–
57
65
GS
D
Static Drain–to–Source On–Voltage (Note 1.)
(V = 5.0 Vdc, I = 22 Adc)
Vdc
DS(on)
–
–
1.4
1.17
1.7
–
GS
D
(V = 5.0 Vdc, I = 11 Adc, T = 150°C)
GS
D
J
Forward Transconductance (Note 1.) (V = 7.0 Vdc, I = 11 Adc)
g
FS
–
14.6
–
mhos
pF
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
–
–
–
490
167
56
690
230
80
iss
(V = 25 Vdc, V = 0 Vdc,
DS
GS
Output Capacitance
C
oss
f = 1.0 MHz)
Transfer Capacitance
C
rss
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
t
–
–
–
–
–
–
–
10
115
21
20
230
40
120
20
–
ns
d(on)
Rise Time
t
r
(V = 30 Vdc, I = 22 Adc,
= 5.0 Vdc, R = 9.1 Ω) (Note 1.)
G
DD
D
V
GS
Turn–Off Delay Time
Fall Time
t
d(off)
t
f
56
Gate Charge
Q
T
Q
1
Q
2
10.4
2.5
7.0
nC
(V = 48 Vdc, I = 22 Adc,
DS
D
V
GS
= 5.0 Vdc) (Note 1.)
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(I = 22 Adc, V = 0 Vdc) (Note 1.)
V
SD
–
–
1.03
0.98
1.2
–
Vdc
ns
S
GS
(I = 22 Adc, V = 0 Vdc, T = 150°C)
S
GS
J
Reverse Recovery Time
t
rr
–
–
–
–
42
26
–
–
–
–
(I = 22 Adc, V = 0 Vdc,
S
GS
t
a
dI /dt = 100 A/µs) (Note 1.)
S
t
b
16
Reverse Recovery Stored Charge
Q
0.060
µC
RR
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
NTP22N06L, NTB22N06L
50
50
V
DS
≥ 10 V
8 V
V
GS
= 10 V
6 V
5.5 V
5 V
40
40
30
30
20
10
0
4.5 V
4 V
20
10
0
T = 25°C
J
3.5 V
3 V
T = 100°C
J
T = –55°C
J
0
1
2
3
4
5
6
1.8
2.6
3.4
4.2
5
5.8
6.6
V
DS
, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
V
GS
, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
0.16
0.12
0.08
0.04
0
0.16
0.12
0.08
0.04
0
V
GS
= 5 V
V
GS
= 10 V
T = 100°C
J
T = 100°C
J
T = 25°C
J
T = 25°C
J
T = –55°C
J
T = –55°C
J
0
10
20
30
40
0
10
20
30
40
50
I , DRAIN CURRENT (AMPS)
D
I , DRAIN CURRENT (AMPS)
D
Figure 3. On–Resistance versus
Gate–to–Source Voltage
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
10000
1000
2
1.8
1.6
1.4
1.2
V
GS
= 0 V
I
V
= 11 A
D
= 5 V
GS
T = 150°C
J
100
10
1
0.8
0.6
T = 100°C
J
–50 –25
0
25
50
75
100 125 150 175
0
10
20
30
40
50
60
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–to–Source Leakage Current
versus Voltage
http://onsemi.com
3
NTP22N06L, NTB22N06L
6
1600
1400
1200
1000
800
V
= 0 V
V
= 0 V
T = 25°C
DS
GS
J
Q
T
5
Q
Q
2
C
1
iss
4
V
GS
3
2
1
0
C
rss
C
iss
600
400
C
C
oss
I
D
= 22 A
200
0
rss
T = 25°C
J
V
GS
V
DS
10
5
0
5
10
15
20
25
0
2
4
6
8
10
12
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE
(VOLTS)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate–to–Source and
Drain–to–Source Voltage versus Total Charge
1000
24
20
16
12
8
V
I
= 30 V
= 22 A
= 5 V
V
GS
= 0 V
DS
T = 25°C
J
D
V
GS
t
r
100
10
1
t
f
t
d(off)
t
d(on)
4
0
0.6
1
10
R , GATE RESISTANCE (Ω)
100
0.68
0.76
0.84
0.92
1
1.08
V
SD
, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
G
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
100
10
80
60
V
= 15 V
I
D
= 12 A
GS
SINGLE PULSE
= 25°C
T
C
dc
10 ms
40
20
1 ms
100 µs
1
10 µs
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0
0.1
1
10
100
25
50
75
100
125
150
175
V
DS
, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
http://onsemi.com
4
NTP22N06L, NTB22N06L
1.0
D = 0.5
0.2
0.1
0.05
P
(pk)
0.1
R
(t) = r(t) R
θ
JC
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
0.02
SINGLE PULSE
0.0001
t
1
READ TIME AT t
1
0.01
t
2
T
J(pk)
– T = P
R
θ
(t)
JC
C
(pk)
DUTY CYCLE, D = t /t
1
2
0.01
0.00001
0.001
0.01
t, TIME (µs)
0.1
10
1
Figure 13. Thermal Response
di/dt
I
S
t
rr
t
a
t
b
TIME
0.25 I
t
p
S
I
S
Figure 14. Diode Reverse Recovery Waveform
http://onsemi.com
5
NTP22N06L, NTB22N06L
PACKAGE DIMENSIONS
TO–220 THREE–LEAD
TO–220AB
CASE 221A–09
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
–T–
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
B
F
T
S
4
1
INCHES
DIM MIN MAX
MILLIMETERS
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
A
K
Q
Z
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
2
3
U
H
G
H
J
K
L
L
R
N
Q
R
S
T
V
J
G
D
U
V
Z
N
0.080
2.04
STYLE 5:
PIN 1. GATE
2. DRAIN
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6
NTP22N06L, NTB22N06L
PACKAGE DIMENSIONS
D2PAK
CASE 418B–03
ISSUE D
C
E
V
–B–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
4
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
MILLIMETERS
A
MIN
8.64
9.65
4.06
0.51
1.14
MAX
9.65
10.29
4.83
0.89
1.40
A
B
C
D
E
G
H
J
0.340
0.380
0.160
0.020
0.045
0.380
0.405
0.190
0.035
0.055
S
1
2
3
–T–
SEATING
PLANE
K
0.100 BSC
2.54 BSC
0.080
0.018
0.090
0.575
0.045
0.110
0.025
0.110
0.625
0.055
2.03
0.46
2.79
0.64
J
G
K
S
V
2.29
14.60
1.14
2.79
15.88
1.40
H
D 3 PL
M
M
0.13 (0.005)
T B
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
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7
NTP22N06L, NTB22N06L
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
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attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
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NTP22N06L/D
相关型号：
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