NTB25P06T4 [ONSEMI]
Power MOSFET −60 V, −27.5 A, P−Channel D2PAK; 功率MOSFET -60 V， -27.5 A， P沟道D2PAK
| 型号： | NTB25P06T4 |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET −60 V, −27.5 A, P−Channel D2PAK |
| 文件： | 总6页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTB25P06
Power MOSFET
−60 V, −27.5 A, P−Channel D2PAK
Designed for low voltage, high speed switching applications and to
withstand high energy in the avalanche and commutation modes.
Features
http://onsemi.com
• Pb−Free Packages are Available
V
R
TYP
I MAX
D
(BR)DSS
DS(on)
Typical Applications
• PWM Motor Controls
• Power Supplies
• Converters
−60 V
65 mW @ −10 V
−27.5 A
P−Channel
• Bridge Circuits
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol Value
Unit
G
Drain−to−Source Voltage
V
DSS
−60
V
Gate−to−Source Voltage
− Continuous
S
V
"15
"20
V
Vpk
GS
− Non−Repetitive (t v10 ms)
V
GSM
p
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
Drain Current
− Continuous @ T = 25°C
4
I
27.5
80
A
Apk
A
D
− Single Pulse (t v10 ms)
I
p
DM
2
3
Total Power Dissipation @ T = 25°C
P
120
W
1
A
D
Operating and Storage
Temperature Range
T , T
J
−55 to
+175
°C
stg
NTB25P06
YWW
2
D PAK
CASE 418B
STYLE 2
Single Pulse Drain−to−Source Avalanche
E
AS
600
mJ
°C/W
°C
Energy − Starting T = 25°C
J
Drain
(V = 25 V, V = 10 V,
DD
GS
I
= 20 A, L = 3 mH, R = 25 W)
G
L(pk)
Gate
NTB25P06 = Device Code
Source
Thermal Resistance
− Junction−to−Case
R
R
R
1.25
46.8
63.2
q
JC
JA
JA
Y
WW
= Year
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
q
q
= Work Week
Maximum Lead Temperature for Soldering
T
260
L
Purposes, (1/8″ from case for 10 s)
ORDERING INFORMATION
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
†
Device
Package
Shipping
2
NTB25P06
D PAK
50 Units/Rail
50 Units/Rail
2
NTB25P06G
D PAK
1. When surface mounted to an FR4 board using 1″ pad size
(Pb−Free)
2
(Cu Area 1.127 in ).
2
2. When surface mounted to an FR4 board using the minimum recommended
NTB25P06T4
D PAK
800/Tape & Reel
800/Tape & Reel
2
pad size (Cu Area 0.412 in ).
2
NTB25P06T4G
D PAK
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
August, 2004 − Rev. 2
NTB25P06/D
NTB25P06
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V = 0 V, I = −250 mA)
V
V
(BR)DSS
−60
−
−
64
−
−
GS
D
mV/°C
mA
(Positive Temperature Coefficient)
Zero Gate Voltage Drain Current
I
DSS
(V = 0 V, V = −60 V, T = 25°C)
−
−
−
−
−10
−100
GS
DS
J
(V = 0 V, V = −60 V, , T = 150°C)
GS
DS
J
Gate−Body Leakage Current (V = ±15 V, V = 0 V)
I
−
−
±100
nA
GS
DS
GSS
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(V = V = −250 mA)
V
V
mV/°C
W
GS(th)
I
GS, D
−2.0
−
−2.8
6.2
−4.0
−
DS
(Negative Threshold Temperature Coefficient)
Static Drain−Source On−State Resistance
R
DS(on)
(V = −10 V, I = −12.5 A)
−
−
0.065
0.070
0.075
0.082
GS
D
(V = −10 V, I = −25 A)
GS
D
Forward Transconductance
(V = −10 V, I = −12.5 A)
gFS
Mhos
pF
−
13
−
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
−
−
−
1200
345
90
1680
480
iss
(V = −25 V, V = 0 V,
DS
GS
Output Capacitance
C
oss
F = 1.0 MHz)
Reverse Transfer Capacitance
C
180
rss
SWITCHING CHARACTERISTICS (Notes 3 & 4)
Turn−On Delay Time
t
−
−
−
−
−
−
−
14
72
24
118
68
320
50
−
ns
ns
ns
ns
nC
d(on)
Rise Time
t
r
(V = −30 V, I = −25 A,
DD
D
V
GS
= −10 V R = 9.1 W)
G
Turn−Off Delay Time
Fall Time
t
43
d(off)
t
f
190
33
Gate Charge
Q
T
Q
1
Q
2
(V = −48 V, I = −25 A,
DS
D
6.5
15
V
GS
= −10 V)
−
BODY−DRAIN DIODE RATINGS (Note 3)
Diode Forward On−Voltage
V
SD
−
−
−1.8
−1.4
−2.5
−
V
(I = −25 A, V = 0 V)
S
GS
(I = −25 A, V = 0 V, T = 150°C)
S
GS
J
Reverse Recovery Time
t
−
−
−
−
70
50
20
0.2
−
−
−
−
ns
rr
(I = −25 A, V = 0 V,
dI /dt = 100 A/ms)
S
S
GS
t
a
t
b
Reverse Recovery Stored Charge
Q
mC
RR
3. Indicates Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
NTB25P06
50
45
50
V
= −10 V
T = 25°C
GS
V
DS
≥ 10 V
J
−7 V
−8 V
T = 25°C
J
−9 V
40
35
40
30
20
30
25
T = −55°C
J
−6 V
T = 125°C
J
−5.5 V
−5 V
20
15
10
5
10
0
−4.5 V
−4.2 V
0
0
2
4
6
8
10
2
4
6
8
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
−V , GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.2
0.15
0.1
0.095
0.085
V
GS
= −10 V
T = 25°C
J
T = 125°C
J
V
GS
= −10 V
T = 25°C
J
0.075
0.065
T = −55°C
V
GS
= −15 V
J
0.05
0
0
10
20
30
40
50
10
20
30
40
50
−I , DRAIN CURRENT (AMPS)
D
−I , DRAIN CURRENT (AMPS)
D
Figure 3. On−Resistance vs. Drain Current and
Temperature
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10000
1000
100
1.75
1.5
1.25
1
V
GS
= 0 V
I
V
= −25 A
D
= −10 V
GS
T = 150°C
J
T = 125°C
J
0.75
0.5
10
−50 −25
0
25
50
75
100 125
150
0
10
20
30
40
50
60
T , JUNCTION TEMPERATURE (°C)
J
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
3
NTB25P06
3000
2500
2000
1500
1000
10
Q
V
= 0 V
V
= 0 V
T
T = 25°C
DS
GS
J
V
DS
C
8
6
4
2
0
iss
V
GS
Q
Q
1
2
C
rss
C
C
iss
oss
500
0
I
D
= −25 A
C
rss
T = 25°C
J
−V
GS
−V
DS
10
5
0
5
10
15
20
25
0
4
10
15
20
25
30
35
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
100
10
25
20
15
10
5
V
= 0 V
GS
T = 25°C
J
t
t
r
f
t
d(off)
t
d(on)
V
DD
= −30 V
I
D
= −25 A
V
= −10 V
GS
1
0
1
10
R , GATE RESISTANCE (W)
100
0
0.25
0.5
0.75
1
1.25
1.5
1.75
−V , SOURCE−TO−DRAIN VOLTAGE (VOLTS)
SD
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
600
V
GS
= −20 V
I
D
= −25 A
SINGLE PULSE
= 25°C
500
400
T
C
100
10
dc
300
200
100
0
10 ms
1 ms
100 ms
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.1
1
10
100
25
50
75
100
125
150
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
4
NTB25P06
PACKAGE DIMENSIONS
D2PAK
CASE 418B−04
ISSUE H
C
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
E
V
W
−B−
4
INCHES
DIM MIN MAX
MILLIMETERS
MIN
MAX
A
B
C
D
E
F
G
H
J
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
8.64
9.65 10.29
4.06
0.51
1.14
7.87
9.65
A
S
1
2
3
4.83
0.89
1.40
8.89
−T−
SEATING
PLANE
K
2.54 BSC
W
0.080
0.018 0.025
0.090 0.110
0.110
2.03
0.46
2.29
1.32
7.11
5.00 REF
2.00 REF
0.99 REF
2.79
0.64
2.79
1.83
8.13
J
G
K
L
H
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
D 3 PL
M
N
P
R
S
V
M
M
0.13 (0.005)
T
B
0.575 0.625 14.60 15.88
0.045 0.055 1.14 1.40
VARIABLE
CONFIGURATION
ZONE
N
P
STYLE 2:
PIN 1. GATE
R
U
2. DRAIN
3. SOURCE
4. DRAIN
L
L
L
M
M
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
8.38
0.33
1.016
0.04
10.66
0.42
5.08
0.20
3.05
0.12
17.02
0.67
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
NTB25P06
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
NTB25P06/D
相关型号：
©2020 ICPDF网 联系我们和版权申明