NTB23N03RT4 [ONSEMI]
Power MOSFET 23 Amps, 25 Volts N−Channel D2PAK; 功率MOSFET 23安培， 25伏特N沟道D2PAK
| 型号： | NTB23N03RT4 |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 23 Amps, 25 Volts N−Channel D2PAK |
| 文件： | 总6页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTB23N03R
Power MOSFET
23 Amps, 25 Volts
N−Channel D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
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Features
23 AMPERES, 25 VOLTS
• Pb−Free Packages are Available
RDS(on) = 32 mW (Typ)
Typical Applications
N−CHANNEL
D
• Planar HD3e Process for Fast Switching Performance
• Low R
to Minimize Conduction Loss
DS(on)
• Low C to Minimize Driver Loss
iss
• Low Gate Charge
• Optimized for High Side Switching Requirements in
High−Efficiency DC−DC Converters
G
S
MAXIMUM RATINGS (T = 25°C unless otherwise specified)
J
Parameter
Drain−to−Source Voltage
Symbol Value Unit
MARKING DIAGRAM
& PIN ASSIGNMENTS
V
25
20
Vdc
Vdc
A
DSS
Gate−to−Source Voltage − Continuous
Drain Current
V
GS
4 Drain
4
− Continuous @ T = 25°C, Limited by Chip
I
I
23
6.0
60
A
D
D
− Continuous @ T = 25°C, Limited by Package
A
T23
N03G
AYWW
2
1
− Single Pulse (t = 10 ms)
I
p
DM
3
Total Power Dissipation @ T = 25°C
P
37.5
W
A
D
Operating and Storage Temperature Range
T , T
−55 to
150
°C
2
1
Gate
3
J
stg
D PAK
2
Source
CASE 418B
STYLE 2
Drain
Thermal Resistance − Junction−to−Case
R
q
JC
3.3
°C/W
°C
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T
260
L
T23N03 = Specific Device Code
A
Y
WW
G
= Assembly Location
= Year
= Work Week
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
August, 2005 − Rev. 2
NTB23N03R/D
NTB23N03R
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 1)
V(br)
Vdc
DSS
(V = 0 Vdc, I = 250 mAdc)
25
−
28
−
−
−
GS
D
Temperature Coefficient (Positive)
mV/°C
mAdc
Zero Gate Voltage Drain Current
I
DSS
(V = 20 Vdc, V = 0 Vdc)
−
−
−
−
1.0
10
DS
GS
(V = 20 Vdc, V = 0 Vdc, T = 150°C)
DS
GS
J
Gate−Body Leakage Current
(V 20 Vdc, V = 0 Vdc)
I
−
−
100
nAdc
GSS
=
GS
DS
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (Note 1)
V
Vdc
GS(th)
(V = V , I = 250 mAdc)
1.0
−
1.8
−
2.0
−
DS
GS
D
Threshold Temperature Coefficient (Negative)
mV/°C
mW
Static Drain−to−Source On−Resistance (Note 1)
R
DS(on)
(V = 4.5 Vdc, I = 6 Adc)
−
−
50.3
32.3
60
45
GS
D
(V = 10 Vdc, I = 6 Adc)
GS
D
Forward Transconductance (Note 1)
(V = 10 Vdc, I = 6 Adc)
g
Mhos
pF
FS
−
14
−
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
−
−
−
225
108
48
−
−
−
iss
Output Capacitance
C
oss
(V = 20 Vdc, V = 0 V, f = 1 MHz)
DS
GS
Transfer Capacitance
C
rss
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
t
−
−
−
−
−
−
−
2.0
14.9
9.9
−
−
−
−
−
−
−
ns
d(on)
t
r
(V = 10 Vdc, V = 10 Vdc,
GS
DD
I
= 6 Adc, R = 3 W)
D
G
Turn−Off Delay Time
Fall Time
t
d(off)
t
2.0
f
Gate Charge
Q
T
Q
1
Q
2
3.76
1.7
nC
(V = 4.5 Vdc, I = 6 Adc,
GS
D
V
= 10 Vdc) (Note 1)
DS
1.6
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
V
Vdc
ns
SD
(I = 6 Adc, V = 0 Vdc) (Note 1)
S
GS
−
−
0.87
0.74
1.2
−
(I = 6 Adc, V = 0 Vdc, T = 125°C)
S
GS
J
Reverse Recovery Time
t
−
−
−
−
8.7
5.2
−
−
−
−
rr
t
a
(I = 6 Adc, V = 0 Vdc,
S
GS
dI /dt = 100 A/ms) (Note 1)
S
t
3.5
b
Reverse Recovery Stored Charge
Q
0.003
mC
RR
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
†
Device
Package
Shipping
2
NTB23N03R
50 Units / Rail
50 Units / Rail
D PAK
2
NTB23N03RG
D PAK
(Pb−Free)
2
NTB23N03RT4
800 Units / Tape & Reel
800 Units / Tape & Reel
D PAK
2
NTB23N03RT4G
D PAK
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
NTB23N03R
20
10 V
20
4.5 V
V
≥ 10 V
DS
8 V
6 V
4 V
16
12
8
16
5 V
3.5 V
12
8
T = 25°C
J
3 V
4
0
4
0
T = −55°C
T = 125°C
J
J
V
= 2.5 V
GS
0
2
4
6
8
10
0
1
2
3
4
5
6
V
V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
, GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
DS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.20
0.16
0.12
0.08
0.20
0.16
0.12
0.08
V
= 4.5 V
= 10 V
GS
GS
T = 125°C
J
T = 25°C
J
T = 125°C
J
T = 25°C
J
0.04
0
0.04
0
T = −55°C
J
T = −55°C
J
0
4
8
12
16
20
0
4
8
12
16
20
I , DRAIN CURRENT (AMPS)
D
I , DRAIN CURRENT (AMPS)
D
Figure 3. On−Resistance versus Drain Current
and Temperature
Figure 4. On−Resistance versus Drain Current
and Temperature
10,000
1000
1.8
1.6
1.4
1.2
1
V
= 0 V
GS
I
V
= 6 A
D
= 10 V
GS
T = 150°C
J
T = 125°C
J
100
10
0.8
0.6
−50 −25
0
25
50
75
100
125
150
0
5
10
15
20
25
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
NTB23N03R
400
300
200
8
6
T = 25°C
V
= 0 V V = 0 V
GS
J
DS
C
iss
V
GS
Q
T
C
rss
C
C
iss
4
Q
Q
2
1
oss
100
0
2
C
rss
I
= 6 A
D
T = 25°C
J
0
V
V
DS
10
5
0
5
10
15
20
0
0.5 1.0
1.5 2.0
2.5 3.0
3.5 4.0
4.5
GS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
100
10
8
V
= 10 V
= 6 A
= 10 V
DS
GS
V
= 0 V
GS
I
D
V
6
t
r
t
10
d(off)
4
T = 150°C
J
t
2
0
d(on)
t
T = 25°C
f
J
1
1
10
R , GATE RESISTANCE (W)
100
0
0.2
0.4
0.6
0.8
1.0
V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
SD
G
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
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4
NTB23N03R
PACKAGE DIMENSIONS
D2PAK
CASE 418AA−01
ISSUE O
NOTES:
C
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
V
W
−B−
INCHES
DIM MIN MAX
MILLIMETERS
4
MIN
MAX
A
B
C
D
E
F
G
J
K
M
S
V
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.036
0.045 0.055
8.64
9.65 10.29
4.06
0.51
1.14
7.87
9.65
4.83
0.92
1.40
−−−
A
S
1
2
3
0.310
0.100 BSC
0.018 0.025
−−−
2.54 BSC
0.46
2.29
7.11
0.64
2.79
−−−
−T−
SEATING
PLANE
0.090
0.280
0.110
−−−
K
W
0.575 0.625 14.60 15.88
0.045 0.055 1.14 1.40
J
G
STYLE 2:
PIN 1. GATE
D 3 PL
2. DRAIN
3. SOURCE
4. DRAIN
M
M
0.13 (0.005)
T B
VARIABLE
CONFIGURATION
ZONE
U
M
M
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
8.38
0.33
1.016
0.04
10.66
0.42
5.08
0.20
3.05
0.12
17.02
0.67
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
NTB23N03R
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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NTB23N03R/D
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