IRFR18N15DTRR [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 18A I(D) | TO-252AA ; 晶体管| MOSFET | N沟道| 150V V（ BR ） DSS | 18A I（ D） | TO- 252AA
| 型号： | IRFR18N15DTRR |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 18A I(D) | TO-252AA
|
| 文件： | 总10页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 93815A
IRFR18N15D
IRFU18N15D
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS
150V
RDS(on) max
ID
18A
0.125Ω
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
D-Pak
IRFR18N15D
I-Pak
IRFU18N15D
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
18
13
A
72
PD @TC = 25°C
Power Dissipation
110
W
W/°C
V
Linear Derating Factor
0.71
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 30
Peak Diode Recovery dv/dt
Operating Junction and
3.3
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Typical SMPS Topologies
l Telecom 48V input DC-DC Active Clamp Reset Forward Converter
Notes through are on page 10
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IRFR18N15D/IRFU18N15D
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
150 ––– –––
––– 0.17 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 0.125
3.0 ––– 5.5
Ω
VGS = 10V, ID = 11A
VDS = VGS, ID = 250µA
VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 150°C
VGS = 30V
V
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 50V, ID = 11A
ID = 11A
gfs
4.2
–––
–––
–––
–––
–––
–––
–––
––– –––
S
Qg
28
7.6
14
43
11
21
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 120V
VGS = 10V,
VDD = 75V
8.8 –––
25 –––
15 –––
9.8 –––
ID = 11A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.8Ω
VGS = 10V
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
––– 900 –––
––– 190 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
–––
49 –––
pF
ƒ = 1.0MHz
––– 1160 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 120V ꢀ
–––
–––
88 –––
95 –––
C
oss eff.
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
Max.
200
11
Units
mJ
EAS
IAR
–––
–––
–––
Avalanche Current
A
EAR
Repetitive Avalanche Energy
11
mJ
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
–––
–––
Max.
1.4
Units
RθJC
RθJA
RθJA
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
50
°C/W
110
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
18
72
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 130 190
––– 660 980
V
TJ = 25°C, IS = 11A, VGS = 0V
ns
TJ = 25°C, IF = 11A
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFR18N15D/IRFU18N15D
100
100
10
1
VGS
15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
VGS
15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
TOP
TOP
BOTTOM 6.0V
BOTTOM 6.0V
10
6.0V
6.0V
20µs PULSE WIDTH
T = 175 C
J
20µs PULSE WIDTH
T = 25 C
J
°
°
1
0.1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
18A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
°
T = 175 C
J
10
°
T = 25 C
J
V
= 50V
DS
20µs PULSE WIDTH
V
= 10V
GS
1
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
6
7
8
9
10 11
12
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRFR18N15D/IRFU18N15D
20
16
12
8
I
D
= 11A
10000
V
= 0V,
f = 1 MHZ
GS
V
V
V
= 120V
= 75V
= 30V
C
= C + C
,
C
ds
SHORTED
DS
DS
DS
iss
gs
gd
C
= C
gd
rss
C
= C + C
oss
ds
gd
1000
100
10
Ciss
Coss
Crss
4
FOR TEST CIRCUIT
SEE FIGURE 13
1
10
100
1000
0
0
10
20
30
40
V
, Drain-to-Source Voltage (V)
DS
Q
, Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
°
T = 175 C
10us
J
°
T = 25 C
J
100us
1ms
1
°
T = 25 C
C
J
°
T = 175 C
V
= 0 V
GS
Single Pulse
10ms
0.1
0.2
1
0.5
0.8
1.1
1.4
1
10
100
1000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFR18N15D/IRFU18N15D
RD
20
16
12
8
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
4
V
DS
90%
0
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
0.01
t
1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
x Z
+ T
thJC C
J
DM
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFR18N15D/IRFU18N15D
500
1 5V
I
D
TOP
4.4A
9.0A
11A
400
300
200
100
0
BOTTOM
DRIVER
L
V
G
DS
D.U.T
R
+
-
V
D D
I
A
AS
20V
0.01
t
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
°
Starting T , Junction Temperature ( C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
Q
G
Q
Q
GD
GS
V
G
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
V
GS
3mA
I
I
D
G
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
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IRFR18N15D/IRFU18N15D
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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IRFR18N15D/IRFU18N15D
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
2.38 (.09 4)
2.19 (.08 6)
6.73 (.265 )
6.35 (.250 )
1.14 (.045)
0.89 (.035)
- A
-
1.27 (.050 )
0.88 (.035 )
5 .46 (.215 )
5 .21 (.205 )
0.58 (.02 3)
0.46 (.01 8)
4
6.4 5 (.2 45)
5.6 8 (.2 24)
6.2 2 (.2 45)
5.9 7 (.2 35)
10 .42 (.4 10 )
9.40 (.37 0)
1.02 (.04 0)
1.64 (.02 5)
LE AD A SS IG N M E NTS
1 - G A TE
1
2
3
2 - D R A IN
0 .51 (.02 0)
M IN.
- B
-
3 - S O U R CE
4 - D R A IN
1 .5 2 (.06 0)
1 .1 5 (.04 5)
0.89 (.035 )
0.64 (.025 )
3X
0 .5 8 (.0 23)
0 .4 6 (.0 18)
1.1 4 (.0 45)
0.7 6 (.0 30)
2X
0.25 (.01 0)
M
A M B
N O TE S :
2.28 (.09 0)
1
2
3
4
D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5 M , 1 982 .
C O N TR O LL ING D IM EN SIO N : IN C H .
4 .57 (.18 0)
C O N FO R M S TO JE D E C O U TLIN E TO -252 AA .
D IM E N S IO N S SH O W N A R E B EF O R E S O LD ER D IP ,
S O LD ER D IP M A X. +0.16 (.0 06).
D-Pak (TO-252AA) Part Marking Information
8
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IRFR18N15D/IRFU18N15D
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
6 .73 (.26 5)
6 .35 (.25 0)
2.38 (.094)
2.19 (.086)
- A
-
0.58 (.023)
0.46 (.018)
1.27 (.050)
0.88 (.035)
5 .4 6 (.21 5)
5 .2 1 (.20 5)
L EAD A SSIG N M EN TS
1 - G ATE
4
2 - D RA IN
6.4 5 (.245)
5.6 8 (.224)
3 - SO U R C E
4 - D RA IN
6 .22 (.2 45)
5 .97 (.2 35)
1.52 (.060)
1.15 (.045)
1
2
3
- B
-
N O TE S:
1
2
3
4
D IM EN SIO N IN G
&
TO LER AN C IN G P ER AN SI Y14.5M , 198 2.
2.28 (.0 90)
1.91 (.0 75)
9.65 (.380)
8.89 (.350)
C O NTR OL LIN G D IM EN SIO N : IN C H .
C O NF O R MS TO JEDE C O UTLINE TO -25 2AA.
D IM EN SIO N S S HO W N A R E BE FO RE SO L DE R D IP,
SO LDE R DIP M AX. +0.16 (.006).
1.14 (.045 )
0.76 (.030 )
1 .14 (.04 5)
0 .89 (.03 5)
3X
0.89 (.0 35)
0.64 (.0 25)
3X
0.25 (.010 )
M
A M B
0.58 (.023)
0.46 (.018)
2.28 (.09 0)
2X
I-Pak (TO-251AA) Part Marking Information
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IRFR18N15D/IRFU18N15D
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED D IRECTIO N
FEED DIR ECTION
N O TES
:
1. CO NTRO LLING D IMENSIO N : M ILLIM ETER.
2. ALL D IM EN SION S ARE SHO W N IN M ILLIM ETERS ( INCHES ).
3. OU TLINE C ON FO RMS TO EIA-481 & EIA-541.
13 INCH
16 m m
NO TES :
1. OU TLINE CON FO RMS TO EIA-481.
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
Starting TJ = 25°C, L = 3.3mH
RG = 25Ω, IAS = 11A.
ꢀCoss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
ISD ≤ 11A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice. 2/00
10
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