IRFR1N60A [KERSEMI]
Power MOSFET; 功率MOSFET
| 型号： | IRFR1N60A |
| 厂家： | 
Kersemi Electronic Co., Ltd. |
| 描述： | Power MOSFET |
| 文件： | 总7页 (文件大小：2674K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A
Power MOSFET
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
PRODUCT SUMMARY
VDS (V)
600
Available
RDS(on) (Max.) (Ω)
Qg (Max.) (nC)
VGS = 10 V
7.0
RoHS*
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
14
2.7
COMPLIANT
Q
Q
gs (nC)
gd (nC)
8.1
• Fully Characterized Capacitance and Avalanche Voltage
and Current
Configuration
Single
• Lead (Pb)-free Available
D
APPLICATIONS
DPAK
IPAK
(TO-252)
(TO-251)
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• Power Factor Correction
G
TYPICAL SMPS TOPOLOGIES
S
• Low Power Single Transistor Flyback
N-Channel MOSFET
ORDERING INFORMATION
Package
DPAK (TO-252)
IRFR1N60APbF
SiHFR1N60A-E3
IRFR1N60A
DPAK (TO-252)
IRFR1N60ATRLPbFa
SiHFR1N60ATL-E3a
DPAK (TO-252)
IRFR1N60ATRPbFa
SiHFR1N60AT-E3a
IRFR1N60ATRa
SiHFR1N60ATa
DPAK (TO-252)
IRFR1N60ATRRPbFa IRFU1N60APbF
SiHFR1N60ATR-E3a
IPAK (TO-251)
Lead (Pb)-free
SiHFU1N60A-E3
IRFU1N60A
-
-
-
-
SnPb
SiHFR1N60A
SiHFU1N60A
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
600
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
30
TC = 25 °C
C = 100 °C
1.4
Continuous Drain Current
VGS at 10 V
ID
T
0.89
5.6
A
Pulsed Drain Currenta
IDM
Linear Derating Factor
0.28
93
W/°C
mJ
A
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
1.4
EAR
3.6
mJ
W
Maximum Power Dissipation
TC = 25 °C
PD
36
Peak Diode Recovery dV/dtc
dV/dt
TJ, Tstg
3.8
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
- 55 to + 150
300d
°C
for 10 s
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1
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
RthJA
-
110
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
RthJC
-
-
50
°C/W
Maximum Junction-to-Case (Drain)
3.5
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
600
-
-
-
-
-
-
-
-
V
2.0
4.0
100
25
250
7.0
-
VGS
VDS = 600 V, VGS = 0 V
DS = 480 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 0.84 Ab
=
30 V
-
nA
µA
-
Zero Gate Voltage Drain Current
IDSS
V
-
-
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
Ω
VDS = 50 V, ID = 0.84 A
0.88
S
Input Capacitance
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
-
-
229
32.6
2.4
320
11.5
130
-
-
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
Output Capacitance
-
Reverse Transfer Capacitance
-
pF
VDS = 1.0 V, f = 1.0 MHz
-
Output Capacitance
Coss
V
GS = 0 V
V
DS = 480 V, f = 1.0 MHz
VDS = 0 V to 480 Vc
-
-
Effective Output Capacitance
Total Gate Charge
Coss eff.
Qg
14
2.7
8.1
-
ID = 1.4 A, VDS = 400 V,
see fig. 6 and 13b
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
td(on)
tr
VGS = 10 V
-
nC
ns
-
Turn-On Delay Time
Rise Time
9.8
14
-
V
DD = 250 V, ID = 1.4 A,
RG = 2.15 Ω, RD = 178 Ω, see fig. 10b
Turn-Off Delay Time
Fall Time
td(off)
tf
18
-
20
-
Drain-Source Body Diode Characteristics
D
MOSFET symbol
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
-
-
-
-
1.4
5.6
showing the
integral reverse
p - n junction diode
A
G
ISM
S
Body Diode Voltage
VSD
trr
TJ = 25 °C, IS = 1.4 A, VGS = 0 Vb
-
-
-
-
1.6
440
760
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
290
510
ns
µC
TJ = 25 °C, IF = 1.4 A, dI/dt = 100 A/µsb
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
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IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
10
VGS
15V
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
°
T = 150 C
J
1
1
°
T = 25 C
J
0.1
0.01
4.5V
20μs PULSE WIDTH
V
= 100V
DS
20μs PULSE WIDTH
°
T = 25 C
J
0.1
0.1
1
10
100
4.0
5.0
6.0
7.0 8.0
9.0
V
, Drain-to-Source Voltage (V)
V
, Gate-to-Source Voltage (V)
DS
GS
Fig. 3 - Typical Transfer Characteristics
Fig. 1 - Typical Output Characteristics
10
3.0
VGS
1.4A
=
I
D
TOP
15V
10V
8.0V
7.0V
2.5
2.0
1.5
1.0
0.5
0.0
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
4.5V
20μs PULSE WIDTH
T = 150 C
V
=10V
°
GS
J
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
1
10
100
T , Junction Temperature ( C)
V
, Drain-to-Source Voltage (V)
J
DS
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
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IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A
10000
10
V
C
C
C
= 0V,
f = 1MHz
GS
iss
rss
oss
= C + C
,
C
SHORTED
gs
gd
ds
= C
gd
= C + C
ds
gd
1000
100
10
°
T = 150 C
J
C
iss
1
C
oss
°
T = 25 C
J
C
rss
V
= 0 V
GS
1
0.1
A
0.4
0.6
0.8
1.0
1.2
1
10
100
1000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
100
I
D
= 1.4A
OPERATION IN THIS AREA LIMITED
V
V
V
= 480V
= 300V
= 120V
BY R
DS
DS
DS
DS(on)
16
12
8
10
10us
100us
1
1ms
4
°
T = 25 C
J
C
°
T = 150 C
FOR TEST CIRCUIT
SEE FIGURE 13
10ms
1000
Single Pulse
0.1
0
10
100
10000
0
2
4
6
8
10
12
14
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
Fig. 8 - Maximum Safe Operating Area
G
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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4
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A
RD
VDS
1.6
1.2
0.8
0.4
0.0
VGS
D.U.T.
RG
+
V
-
DD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
25
50
75
100
125
°
150
10 %
VGS
T , Case Temperature ( C)
C
td(on) tr
td(off) tf
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
10
D = 0.50
1
0.20
0.10
0.05
0.02
P
2
DM
SINGLE PULSE
0.01
0.1
t
(THERMAL RESPONSE)
1
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
15 V
tp
Driver
L
VDS
D.U.T
IAS
RG
+
-
V
A
DD
IAS
20 V
0.01 Ω
tp
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
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IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A
200
770
I
D
TOP
0.65A
0.9A
160
120
80
40
0
BOTTOM 1.4A
750
730
710
690
670
A
0.0
0.4
0.8
1.2
1.6
25
50
75
100
125
150
I
, Avalanche Current (A)
°
av
Starting T , Junction Temperature ( C)
J
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 12d - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
50 kΩ
QG
VGS
12 V
0.2 µF
0.3 µF
QGS
QGD
+
-
VDS
D.U.T.
VG
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Maximum Avalanche Energy vs. Drain Current
Fig. 13b - Gate Charge Test Circuit
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IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
D.U.T
• Low leakage inductance
current transformer
-
+
-
-
+
RG
• dV/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by duty factor "D"
• D.U.T. - device under test
VDD
Driver gate drive
P.W.
P.W.
Period
Period
D =
V
= 10 V*
GS
D.U.T. I waveform
SD
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. V waveform
DS
Diode recovery
dV/dt
V
DD
Re-applied
voltage
Body diode forward drop
Ripple ≤ 5 %
Inductor current
I
SD
* VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
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7
相关型号：
IRFR1N60ATRR
Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
VISHAY
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