IRFR1N60ATRLPBF [VISHAY]

Power MOSFET; 功率MOSFET
IRFR1N60ATRLPBF
型号: IRFR1N60ATRLPBF
厂家: VISHAY    VISHAY
描述:

Power MOSFET
功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲
文件: 总8页 (文件大小:156K)
中文:  中文翻译
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IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Low Gate Charge Qg Results in Simple Drive  
Requirement  
PRODUCT SUMMARY  
VDS (V)  
DS(on) (Max.) (Ω)  
Qg (Max.) (nC)  
600  
Available  
R
VGS = 10 V  
7.0  
RoHS*  
• Improved Gate, Avalanche and Dynamic dV/dt  
Ruggedness  
14  
2.7  
COMPLIANT  
Q
Q
gs (nC)  
gd (nC)  
8.1  
• Fully Characterized Capacitance and Avalanche Voltage  
and Current  
Configuration  
Single  
• Lead (Pb)-free Available  
D
APPLICATIONS  
DPAK  
IPAK  
(TO-252)  
(TO-251)  
• Switch Mode Power Supply (SMPS)  
• Uninterruptible Power Supply  
• Power Factor Correction  
G
TYPICAL SMPS TOPOLOGIES  
S
• Low Power Single Transistor Flyback  
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
DPAK (TO-252)  
IRFR1N60APbF  
SiHFR1N60A-E3  
IRFR1N60A  
DPAK (TO-252)  
IRFR1N60ATRLPbFa  
SiHFR1N60ATL-E3a  
DPAK (TO-252)  
IRFR1N60ATRPbFa  
SiHFR1N60AT-E3a  
IRFR1N60ATRa  
SiHFR1N60ATa  
DPAK (TO-252)  
IRFR1N60ATRRPbFa IRFU1N60APbF  
SiHFR1N60ATR-E3a  
IPAK (TO-251)  
Lead (Pb)-free  
SiHFU1N60A-E3  
IRFU1N60A  
-
-
-
-
SnPb  
SiHFR1N60A  
SiHFU1N60A  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
600  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
30  
TC = 25 °C  
C = 100 °C  
1.4  
Continuous Drain Current  
VGS at 10 V  
ID  
T
0.89  
5.6  
A
Pulsed Drain Currenta  
IDM  
Linear Derating Factor  
0.28  
93  
W/°C  
mJ  
A
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
EAS  
IAR  
1.4  
EAR  
3.6  
mJ  
W
Maximum Power Dissipation  
TC = 25 °C  
PD  
36  
Peak Diode Recovery dV/dtc  
dV/dt  
TJ, Tstg  
3.8  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
- 55 to + 150  
300d  
°C  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. Starting TJ = 25 °C, L = 95 mH, RG = 25 Ω, IAS = 1.4 A (see fig. 12).  
c. ISD 1.4 A, dI/dt 180 A/µs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91267  
S-81367-Rev. A, 21-Jul-08  
www.vishay.com  
1
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A  
Vishay Siliconix  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
TYP.  
MAX.  
UNIT  
Maximum Junction-to-Ambient  
RthJA  
-
110  
Maximum Junction-to-Ambient  
(PCB Mount)a  
RthJA  
RthJC  
-
-
50  
°C/W  
Maximum Junction-to-Case (Drain)  
3.5  
Note  
a. When mounted on 1" square PCB (FR-4 or G-10 material).  
SPECIFICATIONS TJ = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
Static  
Drain-Source Breakdown Voltage  
Gate-Source Threshold Voltage  
Gate-Source Leakage  
VDS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250 µA  
600  
-
-
-
-
-
-
-
-
V
2.0  
4.0  
100  
25  
250  
7.0  
-
VGS  
VDS = 600 V, VGS = 0 V  
DS = 480 V, VGS = 0 V, TJ = 150 °C  
VGS = 10 V  
ID = 0.84 Ab  
VDS = 50 V, ID = 0.84 A  
=
30 V  
-
nA  
µA  
-
Zero Gate Voltage Drain Current  
IDSS  
V
-
-
Drain-Source On-State Resistance  
Forward Transconductance  
Dynamic  
RDS(on)  
gfs  
Ω
0.88  
S
Input Capacitance  
Ciss  
Coss  
Crss  
-
-
-
-
-
-
-
-
-
-
-
-
-
229  
32.6  
2.4  
320  
11.5  
130  
-
-
VGS = 0 V,  
DS = 25 V,  
f = 1.0 MHz, see fig. 5  
Output Capacitance  
V
-
Reverse Transfer Capacitance  
-
pF  
VDS = 1.0 V, f = 1.0 MHz  
-
Output Capacitance  
Coss  
V
GS = 0 V  
V
DS = 480 V, f = 1.0 MHz  
VDS = 0 V to 480 Vc  
-
-
Effective Output Capacitance  
Total Gate Charge  
Coss eff.  
Qg  
14  
2.7  
8.1  
-
ID = 1.4 A, VDS = 400 V,  
see fig. 6 and 13b  
Gate-Source Charge  
Gate-Drain Charge  
Qgs  
Qgd  
td(on)  
tr  
V
GS = 10 V  
-
nC  
ns  
-
Turn-On Delay Time  
Rise Time  
9.8  
14  
-
V
DD = 250 V, ID = 1.4 A,  
R
G = 2.15 Ω, RD = 178 Ω, see fig. 10b  
Turn-Off Delay Time  
Fall Time  
td(off)  
tf  
18  
-
20  
-
Drain-Source Body Diode Characteristics  
D
MOSFET symbol  
showing the  
Continuous Source-Drain Diode Current  
Pulsed Diode Forward Currenta  
IS  
-
-
-
-
1.4  
5.6  
A
G
integral reverse  
p - n junction diode  
ISM  
S
Body Diode Voltage  
VSD  
trr  
TJ = 25 °C, IS = 1.4 A, VGS = 0 Vb  
-
-
-
-
1.6  
440  
760  
V
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
Forward Turn-On Time  
290  
510  
ns  
µC  
TJ = 25 °C, IF = 1.4 A, dI/dt = 100 A/µsb  
Qrr  
ton  
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. Pulse width 300 µs; duty cycle 2 %.  
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS  
.
www.vishay.com  
2
Document Number: 91267  
S-81367-Rev. A, 21-Jul-08  
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
10  
10  
VGS  
15V  
TOP  
10V  
8.0V  
7.0V  
6.0V  
5.5V  
5.0V  
BOTTOM 4.5V  
°
T = 150 C  
J
1
1
°
T = 25 C  
J
0.1  
0.01  
4.5V  
20μs PULSE WIDTH  
V
= 100V  
DS  
20μs PULSE WIDTH  
°
T = 25 C  
J
0.1  
0.1  
1
10  
100  
4.0  
5.0  
6.0  
7.0 8.0  
9.0  
V
, Drain-to-Source Voltage (V)  
V
, Gate-to-Source Voltage (V)  
DS  
GS  
Fig. 3 - Typical Transfer Characteristics  
Fig. 1 - Typical Output Characteristics  
10  
3.0  
VGS  
1.4A  
=
I
D
TOP  
15V  
10V  
8.0V  
7.0V  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
6.0V  
5.5V  
5.0V  
BOTTOM 4.5V  
1
4.5V  
20μs PULSE WIDTH  
T = 150 C  
V
=10V  
°
GS  
J
0.1  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
°
1
10  
100  
T , Junction Temperature ( C)  
V
, Drain-to-Source Voltage (V)  
J
DS  
Fig. 2 - Typical Output Characteristics  
Fig. 4 - Normalized On-Resistance vs. Temperature  
Document Number: 91267  
S-81367-Rev. A, 21-Jul-08  
www.vishay.com  
3
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A  
Vishay Siliconix  
10000  
10  
V
C
C
C
= 0V,  
f = 1MHz  
GS  
iss  
rss  
oss  
= C + C  
,
C
SHORTED  
gs  
gd  
ds  
= C  
gd  
= C + C  
ds  
gd  
1000  
100  
10  
°
T = 150 C  
J
C
iss  
1
C
oss  
°
T = 25 C  
J
C
rss  
V
= 0 V  
GS  
1
0.1  
A
0.4  
0.6  
0.8  
1.0  
1.2  
1
10  
100  
1000  
V
,Source-to-Drain Voltage (V)  
V
, Drain-to-Source Voltage (V)  
SD  
DS  
Fig. 7 - Typical Source-Drain Diode Forward Voltage  
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage  
20  
100  
I
D
= 1.4A  
OPERATION IN THIS AREA LIMITED  
V
V
V
= 480V  
= 300V  
= 120V  
BY R  
DS  
DS  
DS  
DS(on)  
16  
12  
8
10  
10us  
100us  
1
1ms  
4
°
T = 25 C  
J
C
°
T = 150 C  
FOR TEST CIRCUIT  
SEE FIGURE 13  
10ms  
1000  
Single Pulse  
0.1  
0
10  
100  
10000  
0
2
4
6
8
10  
12  
14  
V
, Drain-to-Source Voltage (V)  
Q , Total Gate Charge (nC)  
DS  
Fig. 8 - Maximum Safe Operating Area  
G
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage  
www.vishay.com  
4
Document Number: 91267  
S-81367-Rev. A, 21-Jul-08  
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A  
Vishay Siliconix  
RD  
VDS  
1.6  
1.2  
0.8  
0.4  
0.0  
VGS  
D.U.T.  
RG  
+
V
-
DD  
10 V  
Pulse width 1 µs  
Duty factor 0.1 %  
Fig. 10a - Switching Time Test Circuit  
VDS  
90 %  
25  
50  
75  
100  
125  
°
150  
10 %  
VGS  
T , Case Temperature ( C)  
C
td(on) tr  
td(off) tf  
Fig. 9 - Maximum Drain Current vs. Case Temperature  
Fig. 10b - Switching Time Waveforms  
10  
D = 0.50  
1
0.20  
0.10  
0.05  
0.02  
P
2
DM  
SINGLE PULSE  
0.01  
0.1  
t
(THERMAL RESPONSE)  
1
t
2
Notes:  
1. Duty factor D =  
t / t  
1
2. Peak T =P  
x Z  
+ T  
C
J
DM  
thJC  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t , Rectangular Pulse Duration (sec)  
1
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case  
VDS  
15 V  
tp  
Driver  
L
VDS  
D.U.T  
IAS  
RG  
+
-
V
A
DD  
IAS  
20 V  
0.01 Ω  
tp  
Fig. 12a - Unclamped Inductive Test Circuit  
Fig. 12b - Unclamped Inductive Waveforms  
Document Number: 91267  
S-81367-Rev. A, 21-Jul-08  
www.vishay.com  
5
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A  
Vishay Siliconix  
200  
770  
I
D
TOP  
0.65A  
0.9A  
160  
120  
80  
40  
0
BOTTOM 1.4A  
750  
730  
710  
690  
670  
A
0.0  
0.4  
0.8  
1.2  
1.6  
25  
50  
75  
100  
125  
150  
I
, Avalanche Current (A)  
°
av  
Starting T , Junction Temperature ( C)  
J
Fig. 12c - Maximum Avalanche Energy vs. Drain Current  
Fig. 12d - Basic Gate Charge Waveform  
Current regulator  
Same type as D.U.T.  
50 kΩ  
QG  
VGS  
12 V  
0.2 µF  
0.3 µF  
QGS  
QGD  
+
-
VDS  
D.U.T.  
VG  
VGS  
3 mA  
Charge  
IG  
ID  
Current sampling resistors  
Fig. 13a - Maximum Avalanche Energy vs. Drain Current  
Fig. 13b - Gate Charge Test Circuit  
www.vishay.com  
6
Document Number: 91267  
S-81367-Rev. A, 21-Jul-08  
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A  
Vishay Siliconix  
Peak Diode Recovery dV/dt Test Circuit  
+
Circuit layout considerations  
Low stray inductance  
Ground plane  
D.U.T  
Low leakage inductance  
current transformer  
-
+
-
-
+
RG  
dV/dt controlled by RG  
+
-
Driver same type as D.U.T.  
ISD controlled by duty factor "D"  
D.U.T. - device under test  
VDD  
Driver gate drive  
P.W.  
P.W.  
Period  
Period  
D =  
V
= 10 V*  
GS  
D.U.T. I waveform  
SD  
Reverse  
recovery  
current  
Body diode forward  
current  
dI/dt  
D.U.T. V waveform  
DS  
Diode recovery  
dV/dt  
V
DD  
Re-applied  
voltage  
Body diode forward drop  
Ripple 5 %  
Inductor current  
I
SD  
* VGS = 5 V for logic level devices  
Fig. 14 - For N-Channel  
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon  
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and  
reliability data, see http://www.vishay.com/ppg?91267.  
Document Number: 91267  
S-81367-Rev. A, 21-Jul-08  
www.vishay.com  
7
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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