DEMO-ATF3X14-32 [ETC]
Single stage 2 GHz LNA demonstration board for ATF-3x143 series ultra low noise PHEMTs ; 单级2 GHz的低噪声放大器演示板ATF - 3x143系列超低噪声PHEMTs\n
| 型号： | DEMO-ATF3X14-32 |
| 厂家： | 
ETC |
| 描述： | Single stage 2 GHz LNA demonstration board for ATF-3x143 series ultra low noise PHEMTs
|
| 文件： | 总19页 (文件大小：473K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Low Noise Pseudomorphic HEMT
in a Surface Mount Plastic Package
Technical Data
ATF-35143
Features
Surface Mount Package
SOT-343
Description
• Low Noise Figure
Agilent’s ATF-35143 is a high
dynamic range, low noise,
PHEMT housed in a 4-lead SC-70
(SOT-343) surface mount plastic
package.
• Excellent Uniformity in
Product Specifications
• Low Cost Surface Mount
Small Plastic Package
SOT-343 (4 lead SC-70)
Based on its featured perfor-
mance, ATF-35143 is suitable for
applications in cellular and PCS
base stations, LEO systems,
MMDS, and other systems requir-
ing super low noise figure with
good intercept in the 450 MHz to
10 GHz frequency range.
• Tape-and-Reel Packaging
Option Available
Pin Connections and
Package Marking
Specifications
1.9 GHz; 2V, 15 mA (Typ.)
DRAIN
SOURCE
• 0.4 dB Noise Figure
SOURCE
GATE
• 18 dB Associated Gain
Other PHEMT devices in this
family are the ATF-34143 and the
ATF-33143. The typical specifica-
tions for these devices at 2 GHz
are shown in the table below:
• 11 dBm Output Power at
1 dB Gain Compression
• 21 dBm Output 3rd Order
Intercept
Note: Top View. Package marking
provides orientation and identification.
“5P” = Device code
“x” = Date code character. A new
character is assigned for each month, year.
Applications
• Low Noise Amplifier for
Cellular/PCS Handsets
Part No.
ATF-33143
ATF-34143
ATF-35143
Gate Width Bias Point NF (dB) Ga (dB) OIP3 (dBm)
1600 µ
800 µ
400 µ
4V, 80 mA
4V, 60 mA
2V, 15 mA
0.5
0.5
0.4
15.0
17.5
18.0
33.5
31.5
21.0
• LNA for WLAN, WLL/RLL,
LEO, and MMDS
Applications
• General Purpose Discrete
PHEMT for Other Ultra Low
Noise Applications
2
ATF-35143 Absolute Maximum Ratings[1]
Notes:
Absolute
Maximum
1. Operation of this device above any one
of these parameters may cause
permanent damage.
2. Assumes DC quiesent conditions.
3. VGS = 0V
4. Source lead temperature is 25°C.
Derate 3.2 mW/°C for TL > 67°C.
5. Thermal resistance measured using
150°C Liquid Crystal Measurement
method.
Symbol
VDS
Parameter
Drain - Source Voltage[2]
Gate - Source Voltage[2]
Gate Drain Voltage[2]
Drain Current[2]
Units
V
5.5
-5
VGS
V
VGD
V
-5
[3]
IDS
mA
mW
dBm
°C
Idss
Pdiss
Pin max
TCH
Total Power Dissipation[4]
300
14
RF Input Power
Channel Temperature
Storage Temperature
Thermal Resistance[5]
160
TSTG
θjc
°C
°C/W
-65 to 160
310
Product Consistency Distribution Charts[7, 8]
120
120
Cpk = 1.73
Std = 0.35
+0.6 V
0 V
100
100
80
60
40
20
0
80
-3 Std
+3 Std
60
40
20
0
–0.6 V
19
20
21
22
23
24
0
2
4
6
8
OIP3 (dBm)
V
(V)
DS
[6]
Figure 2. OIP3 @ 2 GHz, 2 V, 15 mA.
LSL=19.0, Nominal=20.9, USL=23.0
Figure 1. Typical Pulsed I-V Curves
(VGS = -0.2 V per step)
.
200
160
120
160
120
Cpk = 3.7
Std = 0.03
Cpk = 2.75
Std = 0.17
-3 Std
+3 Std
-3 Std
+3 Std
80
40
0
80
40
0
0.2
0.3
0.4
0.5
0.6
0.7
16
17
18
GAIN (dB)
19
20
NF (dB)
Figure 3. NF @ 2 GHz, 2 V, 15 mA.
LSL=0.2, Nominal=0.37, USL=0.7
Figure 4. Gain @ 2 GHz, 2 V, 15 mA.
LSL=16.5, Nominal=18.0, USL=19.5
Notes:
6. Under large signal conditions, VGS may
7. Distribution data sample size is 450
samples taken from 9 different wafers.
Future wafers allocated to this product
may have nominal values anywhere
within the upper and lower spec limits.
8. Measurements made on production test
board. This circuit represents a trade-off
between an optimal noise match and a
realizeable match based on production test
requirements. Circuit losses have been de-
embedded from actual measurements.
swing positive and the drain current may
exceed Idss. These conditions are
acceptable as long as the maximum Pdiss
and Pin max ratings are not exceeded.
3
ATF-35143 Electrical Specifications
TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol
Parameters and Test Conditions
Units Min. Typ.[2] Max.
[1]
Idss
Saturated Drain Current
VDS = 1.5 V, VGS = 0 V
VDS = 1.5 V, IDS = 10% of Idss
VGS = 0.45 V, VDS = 2 V
mA
V
40
-0.65
—
65
-0.5
15
80
-0.35
—
[1]
VP
Pinchoff Voltage
Id
[1]
Quiescent Bias Current
Transconductance
mA
gm
VDS = 1.5 V, gm = Idss /VP mmho
90
120
—
IGDO
Igss
Gate to Drain Leakage Current
Gate Leakage Current
VGD = 5 V
µA
µA
dB
250
150
VGD = VGS = -4 V
—
10
f = 2 GHz VDS = 2 V, IDS = 15 mA
VDS = 2 V, IDS = 5 mA
0.4
0.5
0.7
0.9
NF
Ga
Noise Figure[3]
f = 900 MHz VDS = 2 V, IDS = 15 mA
VDS = 2 V, IDS = 5 mA
dB
dB
0.3
0.4
f = 2 GHz VDS = 2 V, IDS = 15 mA
VDS = 2 V, IDS = 5 mA
16.5
14
18
16
19.5
18
Associated Gain[3]
f = 900 MHz VDS = 2 V, IDS = 15 mA
VDS = 2 V, IDS = 5 mA
dB
20
18
f = 2 GHz VDS = 2 V, IDS = 15 mA
VDS = 2 V, IDS = 5 mA
dBm
dBm
dBm
dBm
19
21
14
Output 3rd Order
OIP3
P1dB
Intercept Point[4, 5]
f = 900 MHz VDS = 2 V, IDS = 15 mA
VDS = 2 V, IDS = 5 mA
19
14
f = 2 GHz VDS = 2 V, IDSQ = 15 mA
VDS = 2 V, IDSQ = 5 mA
10
8
1 dB Compressed
Intercept Point[4]
f = 900 MHz VDS = 2 V, IDSQ = 15 mA
VDS = 2 V, IDSQ = 5 mA
9
9
Notes:
1. Guaranteed at wafer probe level
2. Typical value determined from a sample size of 450 parts from 9 wafers.
3. 2V 5 mA min/max data guaranteed via the 2V 15 mA production test.
4. Measurements obtained using production test board described in Figure 5.
5.
Pout = -10 dBm per tone
50 Ohm
Input
50 Ohm
Input
Output
Transmission
Line Including
Gate Bias T
(0.5 dB loss)
Matching Circuit
Γ_mag = 0.66
Γ_ang = 5°
Transmission
Line Including
Drain Bias T
(0.5 dB loss)
DUT
(0.4 dB loss)
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measure-
ments. This circuit represents a trade-off between an optimal noise match and a realizable match based on production test
requirements. Circuit losses have been de-embedded from actual measurements.
4
ATF-35143 Typical Performance Curves
30
25
20
15
10
5
30
25
20
15
10
5
OIP3
OIP3
P
1dB
P
1dB
2 V
3 V
4 V
2 V
3 V
4 V
0
0
10
20
30
(mA)
40
50
60
0
10
20
30
(mA)
40
50
60
I
I
DSQ
DSQ
Figure 7. OIP3 and P1dB vs. Bias at
900 MHz.[1,2]
Figure 6. OIP3 and P1dB vs. Bias at
2 GHz.[1,2]
20
2 V
3 V
4 V
2.5
2
24
2 V
3 V
4 V
2.5
2
19
G
a
22
G
a
18
17
1.5
1
20
18
1.5
1
NF
NF
16
0.5
0
16
0.5
0
15
14
0
10
20
30
(mA)
40
50
60
0
10
20
30
(mA)
40
50
60
I
I
DSQ
DSQ
Figure 8. NF and Ga vs. Bias at 2 GHz.[1]
Figure 9. NF and Ga vs. Bias at
900 MHz.[1]
25
20
15
10
20
15
10
5
5
2 V
2 V
3 V
4 V
0
0
3 V
4 V
-5
-5
0
20
40
60
80
0
20
40
60
80
I
(mA)
I
(mA)
DS
DS
Figure 10. P1dB vs. Bias (Active Bias)
Tuned for NF @ 2V, 15 mA at 2 GHz.[1]
Figure 11. P1dB vs. Bias (Active Bias)
Tuned for NF @ 2V, 15 mA at 900 MHz.[1]
Notes:
1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 2V
15 mA bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on
production test board requirements. Circuit losses have been de-embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device
is running closer to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency)
when compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS
= 4 V and IDSQ = 5 mA, Id increases to 30 mA as a P1dB of +15 dBm is approached.
5
ATF-35143 Typical Performance Curves, continued
1.50
1.25
1.00
0.75
0.50
0.25
0
25
20
15
10
5
5 mA
15 mA
30 mA
5 mA
15 mA
30 mA
0
2
4
6
8
10
0
2
4
6
8
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 12. Fmin vs. Frequency and
Current at 2V.
Figure 13. Associated Gain vs.
Frequency and Current at 2V.
1.0
0.8
0.6
0.4
0.2
0
22
20
25
20
15
10
5
18
25°C
-40°C
85°C
25°C
-40°C
85°C
16
14
12
0
2
4
6
8
0
2
4
6
8
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 14. Fmin and Ga vs. Frequency
and Temperature, VDS=2V, IDS=15 mA.
Figure 15. OIP3 and P1dB vs. Frequency
and Temperature[1,2], VDS=2V, IDS=15 mA.
2.5
2
3
25
20
15
10
5
25
20
15
10
5
2.5
2
1.5
1
1.5
1
P
P
1dB
1dB
0.5
0
0.5
0
OIP3
Gain
NF
OIP3
Gain
NF
0
-5
0
0
20
40
60
80
0
20
40
60
80
I
(mA)
I
(mA)
DS
DS
Figure 16. OIP3, P1dB, NF and Gain vs.
Bias[1] (Active Bias, 2V, 3.9 GHz).
Figure 17. OIP3, P1dB, NF and Gain vs.
Bias[1] (Active Bias, 2V, 5.8 GHz).
Notes:
1. Measurements made on a fixed tuned test fixture that was tuned for noise figure at 2V 15mA bias. This circuit represents a trade-off
between optimal noise match, maximum gain match and a realizable match based on production test requirements. Circuit losses have
been de-embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of Idsq the device is
running closer to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when
compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 4V
and IDSQ = 5 mA, Id increases to 30 mA as a P1dB of +15 dBm is approached.
6
ATF-35143 Typical Scattering Parameters, VDS = 2 V, IDS = 5 mA
Freq.
GHz
S11
S21
Mag.
S12
Mag.
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag.
Ang.
0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
0.99
0.98
0.97
0.94
0.91
0.90
0.85
0.81
-16.90 13.34
-26.37 13.29
-34.76 13.16
-50.59 12.83
-58.26 12.66
-65.74 12.44
-80.62 12.04
-95.48 11.61
4.64
4.62
4.55
4.38
4.30
4.19
4.00
3.81
3.43
3.09
2.80
2.53
2.29
2.06
1.87
1.69
1.52
1.34
166.04 -31.70 0.026
157.78 -28.18 0.039
150.72 -25.85 0.051
137.02 -22.73 0.073
130.38 -21.62 0.083
123.90 -20.72 0.092
111.27 -19.33 0.108
99.08 -18.27 0.122
75.75 -17.08 0.140
53.63 -16.48 0.150
32.77 -16.14 0.156
12.43 -16.08 0.157
-7.12 -16.31 0.153
-26.14 -16.59 0.148
-44.14 -16.89 0.143
-62.85 -17.14 0.139
77.91
71.12
65.76
54.85
49.69
44.45
34.61
25.21
6.95
0.73
0.72
0.71
0.68
0.67
0.65
0.62
0.59
0.52
0.45 -102.71
0.38 -120.16
0.31 -138.01
0.25 -157.10
0.20 -178.27
0.16
0.14
0.17
0.22
0.28
0.34
0.42
0.49
0.56
-12.47
-17.53
-23.33
-34.88
-40.49
-46.03
-56.68
-66.71
-85.11
22.52
20.83
19.50
17.78
17.13
16.58
15.69
14.94
13.89
13.13
12.53
12.07
11.75
11.19
9.63
8.81
7.87
6.79
5.86
5.89
4.84
4.62
0.72 -125.99 10.71
0.66 -156.09
9.79
8.93
8.06
7.20
6.26
5.43
4.58
3.64
2.56
1.45
0.43
-9.83
0.62
0.60
0.60
0.62
0.66
0.70
0.72
0.74
0.76
0.82
0.82
0.84
0.86
174.97
145.61
118.39
93.15
71.31
50.91
31.04
11.26
-3.08
-25.73
-41.00
-54.14
-67.05
-78.09
-88.99
157.62
121.82
82.33
53.17
27.32
6.01
-10.69
-22.32
-35.90
-81.42 -17.52 0.133 -100.38
-99.46 -18.13 0.124 -111.06
1.18 -115.94 -18.79 0.115 -119.00
1.05 -132.24 -19.25 0.109 -127.12
0.92 -149.24 -19.58 0.105 -135.42
0.81 -164.44 -19.74 0.103 -143.49
-14.26
-26.64 -0.72
-38.94 -1.83
-54.78 -3.02
0.71
179.28 -20.18 0.098 -152.36
4.04
ATF-35143 Typical Noise Parameters
VDS = 2 V, IDS = 5 mA
25
20
15
10
5
Freq.
GHz
Fmin
dB
Γopt
Rn/50
-
Ga
dB
Mag.
Ang.
MSG
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.10
0.12
0.14
0.20
0.23
0.27
0.33
0.39
0.52
0.64
0.77
0.89
1.02
1.14
1.27
0.91
0.87
0.86
0.81
0.78
0.76
0.71
0.66
0.58
0.52
0.47
0.43
0.41
0.40
0.41
6.4
15.0
17.2
28.0
33.4
38.8
50.0
61.9
87.2
114.4
143.2
173.5
-155.2
-122.9
-90.1
0.22
0.22
0.22
0.22
0.21
0.21
0.19
0.17
0.13
0.09
0.06
0.05
0.07
0.13
0.24
19.3
17.9
17.5
16.3
15.8
15.4
14.7
14.0
12.7
11.5
10.4
9.5
S
MAG
21
0
-5
0
5
10
15
20
FREQUENCY (GHz)
Figure 18. MSG/MAG and |S21|2 vs.
Frequency at 2 V, 5 mA.
8.7
8.0
7.5
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measure-
ments a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
7
ATF-35143 Typical Scattering Parameters, VDS = 2 V, IDS = 10 mA
Freq.
GHz
S11
S21
Mag.
S12
Mag.
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag.
Ang.
0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
0.99
0.97
0.95
0.91
0.89
0.86
0.81
-18.75 15.89
-29.11 15.79
-38.28 15.61
-55.52 15.17
-63.78 14.92
-71.82 14.65
-87.59 14.11
6.23
6.16
6.03
5.73
5.57
5.40
5.08
4.76
4.17
3.67
3.26
2.91
2.61
2.32
2.10
1.89
1.69
1.49
164.76 -32.40 0.024
155.98 -28.87 0.036
148.42 -26.56 0.047
133.92 -23.61 0.066
127.01 -22.62 0.074
120.27 -21.72 0.082
107.36 -20.35 0.096
95.04 -19.41 0.107
71.95 -18.27 0.122
50.43 -17.65 0.131
30.28 -17.33 0.136
10.68 -17.14 0.139
-8.09 -17.14 0.139
-26.38 -17.20 0.138
-43.90 -17.20 0.138
-61.97 -17.27 0.137
-79.90 -17.39 0.135
77.63
70.58
64.88
54.16
49.11
44.08
34.60
25.71
9.04
0.63
0.61
0.60
0.57
0.56
0.54
0.51
0.47
0.41
0.34 -110.05
0.27 -129.24
0.21 -150.49
0.17 -174.77
0.13
0.11
0.14
0.19
0.26
0.33
0.39
0.45
0.51
0.57
-14.09
-19.69
-26.10
-38.73
-44.79
-50.70
-61.95
-72.47
-91.47
24.14
22.30
21.08
19.39
18.75
18.19
17.23
16.48
15.34
14.47
13.80
13.21
12.73
10.69
9.85
9.16
8.34
7.35
6.51
6.51
5.48
5.24
4.72
0.76 -103.22 13.54
0.66 -134.81 12.40
0.61 -165.34 11.29
-5.97
0.58
0.57
0.58
0.61
0.65
0.69
0.72
0.74
0.77
0.82
0.82
0.84
0.86
165.88 10.27
-20.15
-33.84
-45.60
-57.65
-68.22
-79.30
-90.87
137.00
110.78
86.75
66.25
46.88
27.76
8.62
-5.28
-16.03
-28.32
9.27
8.33
7.32
6.44
5.54
4.56
3.45
2.33
1.29
0.19
9.00
154.01
118.18
78.36
49.57
29.95
9.45
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
-97.18 -17.79 0.129 -102.19
1.31 -112.92 -18.20 0.123 -110.80
1.16 -128.66 -18.56 0.118 -120.09
1.02 -144.87 -18.79 0.115 -129.92
0.91 -159.49 -18.79 0.115 -139.60
0.80 -175.19 -19.33 0.108 -149.17
-7.98
-22.30
-32.23
-44.43
-40.43 -0.87
-56.14 -1.99
ATF-35143 Typical Noise Parameters
VDS = 2 V, IDS = 10 mA
30
25
20
15
10
5
Freq.
GHz
Fmin
dB
Γopt
Rn/50
-
Ga
dB
Mag.
Ang.
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.10
0.11
0.12
0.17
0.20
0.23
0.29
0.34
0.46
0.58
0.69
0.81
0.92
1.04
1.16
0.88
0.84
0.83
0.77
0.74
0.71
0.66
0.60
0.52
0.45
0.40
0.37
0.35
0.35
0.37
5.0
14.0
16.0
26.0
31.9
37.3
48.6
60.6
86.8
115.3
145.8
177.7
-149.3
-115.6
-81.8
0.15
0.15
0.15
0.15
0.15
0.14
0.14
0.12
0.12
0.08
0.05
0.05
0.07
0.12
0.22
20.5
19.0
18.6
17.5
16.9
16.4
15.7
15.0
13.6
12.4
11.3
10.3
9.5
MSG
MAG
S
21
0
-5
0
5
10
15
20
FREQUENCY (GHz)
Figure 19. MSG/MAG and |S21|2 vs.
Frequency at 2 V, 10 mA.
8.8
8.3
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
based on a set of 16 noise figure measurements made at sixteen different impedances using an ATN NP5 test system. From these
measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
8
ATF-35143 Typical Scattering Parameters, VDS = 2 V, IDS = 15 mA
Freq.
GHz
S11
S21
Mag.
S12
Mag.
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag.
Ang.
0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
0.99
0.97
0.95
0.90
0.87
0.84
0.79
-19.75 17.02
-30.58 16.90
-40.15 16.69
-58.08 16.18
-66.65 15.90
-74.93 15.59
-91.13 14.97
7.10
7.00
6.83
6.44
6.23
6.02
5.61
5.21
4.51
3.93
3.47
3.08
2.75
2.44
2.20
1.98
1.76
1.55
164.04 -32.77 0.023
154.98 -29.37 0.034
147.18 -27.13 0.044
132.28 -24.15 0.062
125.22 -23.10 0.070
118.41 -22.27 0.077
105.38 -20.92 0.090
93.08 -20.00 0.100
70.17 -18.94 0.113
49.03 -18.27 0.122
29.27 -17.79 0.129
10.04 -17.59 0.132
-8.35 -17.46 0.134
-26.29 -17.39 0.135
-43.56 -17.33 0.136
-61.33 -17.27 0.137
-78.94 -17.27 0.137
-95.93 -17.59 0.132
77.60
70.54
64.80
54.23
49.25
44.36
35.36
26.85
11.15
-2.96
-16.43
-29.47
-40.80
-52.63
-63.33
-74.77
-86.46
-98.11
0.57
0.55
0.54
0.51
0.49
0.48
0.44
0.41
0.35
-14.99
-20.86
-27.61
-40.74
-46.95
-53.06
-64.59
-75.32
-94.59
24.89
23.05
21.91
20.17
19.53
18.93
17.95
17.17
16.01
15.09
14.30
13.68
12.29
10.74
9.99
9.34
8.57
7.62
6.79
6.76
5.81
5.55
5.06
0.73 -107.08 14.34
0.64 -139.07 13.09
0.59 -169.70 11.90
0.29 -113.89
0.23 -134.46
0.17 -158.65
0.56
0.56
0.57
0.60
0.64
0.68
0.72
0.74
0.77
0.82
0.82
0.84
0.86
161.74 10.81
133.19
107.56
84.16
64.19
45.46
26.66
7.70
-5.93
-16.54
-28.76
9.77
8.78
7.75
6.86
5.93
4.93
3.80
2.68
1.63
0.54
0.14
0.11
0.12
0.16
0.22
0.29
0.36
0.41
0.47
0.53
0.58
172.14
134.01
95.85
63.20
40.01
23.11
3.55
-12.09
-26.21
-35.57
-47.29
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
1.36 -111.53 -17.92 0.127 -107.51
1.21 -126.76 -18.20 0.123 -117.16
1.06 -142.70 -18.49 0.119 -127.03
0.95 -157.02 -18.49 0.119 -137.06
0.83 -172.47 -18.94 0.113 -147.50
-40.79 -0.49
-56.40 -1.60
ATF-35143 Typical Noise Parameters
VDS = 2 V, IDS = 15 mA
30
25
20
15
10
5
Freq.
GHz
Fmin
dB
Γopt
Rn/50
-
Ga
dB
Mag.
Ang.
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.10
0.13
0.14
0.19
0.22
0.23
0.29
0.34
0.45
0.56
0.67
0.79
0.90
1.01
1.12
0.88
0.83
0.82
0.76
0.72
0.70
0.64
0.58
0.49
0.42
0.37
0.34
0.33
0.34
0.36
4.5
13.1
15.3
26.1
32.6
36.9
48.5
60.9
87.9
117.4
149.0
-178.1
-144.3
-110.2
-76.3
0.19
0.17
0.16
0.15
0.15
0.14
0.12
0.07
0.13
0.07
0.05
0.05
0.07
0.13
0.23
20.9
19.4
19.2
17.9
17.3
17.0
16.2
15.4
14.1
12.8
11.7
10.8
9.9
MSG
MAG
S
21
0
-5
0
5
10
15
20
FREQUENCY (GHz)
Figure 20. MSG/MAG and |S21|2 vs.
Frequency at 2 V, 15 mA.
9.2
8.6
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these measure-
ments a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
9
ATF-35143 Typical Scattering Parameters, VDS = 2 V, IDS = 30 mA
Freq.
GHz
S11
S21
Mag.
S12
Mag.
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag.
Ang.
0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
0.99
0.96
0.94
0.88
0.85
0.82
0.76
-20.95 18.17
-32.34 18.02
-42.36 17.77
-61.09 17.18
-69.98 16.85
-78.53 16.50
-95.14 15.81
8.10
7.96
7.73
7.22
6.96
6.69
6.17
5.69
4.86
4.20
3.68
3.24
2.88
2.56
2.30
2.06
1.84
1.61
163.18 -33.56 0.021
153.79 -30.17 0.031
145.67 -27.96 0.040
130.36 -25.04 0.056
123.20 -24.01 0.063
116.28 -23.22 0.069
103.17 -21.94 0.080
90.88 -21.01 0.089
68.24 -19.83 0.102
47.48 -19.02 0.112
28.10 -18.49 0.119
9.28 -18.13 0.124
-8.75 -17.79 0.129
-26.37 -17.59 0.132
-43.37 -17.33 0.136
-60.90 -17.20 0.138
-78.22 -17.14 0.139
-94.88 -17.33 0.136
77.39
70.55
65.08
54.79
50.12
45.58
37.15
29.29
14.76
1.63
-10.98
-23.67
-34.72
-46.33
-57.43
-68.78
-81.32
-93.11
0.49
0.47
0.46
0.43
0.41
0.39
0.36
0.34
0.28
-15.99
-22.00
-29.03
-42.64
-48.96
-55.19
-66.91
-77.74
-97.29
25.87
24.10
22.86
21.11
20.42
19.86
18.87
18.06
16.78
15.74
14.90
14.17
11.98
10.82
10.15
9.51
0.70 -111.48 15.11
0.61 -143.89 13.73
0.56 -174.55 12.46
0.23 -117.24
0.17 -139.78
0.13 -169.09
0.55
0.55
0.56
0.60
0.64
0.68
0.72
0.74
0.77
0.82
0.83
0.85
0.87
157.19 11.31
129.18 10.22
104.19
81.48
62.07
43.83
25.46
6.81
-6.74
-17.21
-29.31
9.20
8.15
7.24
6.29
5.27
4.14
3.01
1.94
0.87
0.11
0.11
0.13
0.18
0.24
0.31
0.38
0.43
0.49
0.54
0.60
155.22
112.23
77.30
51.74
32.67
17.81
0.45
-15.44
-29.37
-38.55
-49.70
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
8.77
7.87
7.08
7.06
6.13
5.89
5.39
1.41 -110.07 -17.65 0.131 -103.06
1.25 -125.15 -17.86 0.128 -112.88
1.11 -140.80 -18.06 0.125 -123.55
0.98 -154.83 -18.13 0.124 -134.43
0.87 -170.03 -18.56 0.118 -144.88
-41.30 -0.15
-56.87 -1.24
ATF-35143 Typical Noise Parameters
VDS = 2 V, IDS = 30 mA
30
25
20
15
10
5
Freq.
GHz
Fmin
dB
Γopt
Rn/50
-
Ga
dB
Mag.
Ang.
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.11
0.15
0.16
0.22
0.25
0.27
0.33
0.39
0.52
0.64
0.77
0.90
1.02
1.15
1.28
0.87
0.81
0.80
0.73
0.69
0.66
0.60
0.54
0.45
0.39
0.34
0.33
0.33
0.36
0.40
2.7
12.1
14.5
26.3
33.4
38.1
50.6
64.2
94.0
126.5
160.6
-164.7
-130.3
-97.5
-67.0
0.18
0.17
0.16
0.15
0.15
0.14
0.13
0.12
0.10
0.07
0.05
0.06
0.10
0.18
0.30
21.6
20.2
19.9
18.7
18.0
17.7
17.0
16.2
14.8
13.5
12.4
11.4
10.5
9.7
MSG
MAG
S
21
0
-5
0
5
10
15
20
FREQUENCY (GHz)
Figure 21. MSG/MAG and |S21|2 vs.
Frequency at 2 V, 30 mA.
9.1
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these measure-
ments a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
10
ATF-35143 Typical Scattering Parameters, VDS = 3 V, IDS = 10 mA
Freq.
GHz
S11
S21
Mag.
S12
Mag.
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag.
Ang.
0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
0.99
0.97
0.95
0.91
0.88
0.86
0.81
-18.76 16.07
-29.12 15.97
-38.28 15.79
-55.52 15.34
-63.78 15.09
-71.79 14.82
-87.55 14.27
6.36
6.29
6.16
5.85
5.68
5.51
5.17
4.85
4.25
3.74
3.32
2.97
2.66
2.38
2.15
1.94
1.74
1.53
164.73 -32.77 0.023
155.93 -29.37 0.034
148.37 -27.13 0.044
133.87 -24.01 0.063
126.95 -22.97 0.071
120.22 -22.05 0.079
107.29 -20.82 0.091
95.00 -19.83 0.102
71.95 -18.71 0.116
50.50 -18.13 0.124
30.44 -17.79 0.129
10.91 -17.65 0.131
-7.80 -17.59 0.132
-26.05 -17.65 0.131
-43.52 -17.65 0.131
-61.59 -17.65 0.131
-79.58 -17.72 0.130
-96.96 -17.99 0.126
76.79
70.22
64.53
54.04
49.13
44.06
34.85
25.98
9.56
0.65
0.63
0.62
0.59
0.57
0.56
0.52
0.49
0.42
0.35 -105.14
0.29 -122.61
0.23 -141.22
0.18 -162.07
0.13
0.10
0.11
0.16
0.23
0.29
0.35
0.42
0.49
0.55
-13.67
-19.08
-25.28
-37.48
-43.28
-49.01
-59.84
-69.88
-87.88
24.42
22.70
21.46
19.68
19.00
18.43
17.55
16.77
15.63
14.79
14.11
13.55
12.81
10.75
9.98
9.32
8.54
7.59
6.76
6.79
5.79
5.54
5.05
0.75 -103.15 13.71
0.66 -134.65 12.56
0.60 -165.16 11.45
-5.10
0.58
0.56
0.57
0.60
0.64
0.68
0.71
0.74
0.77
0.82
0.82
0.84
0.86
166.12 10.43
-19.00
-32.32
-43.61
-55.14
-65.42
-76.27
-87.47
-98.60
137.25
111.11
87.10
66.58
47.31
28.18
9.02
-4.82
-15.65
-28.00
9.44
8.51
7.51
6.64
5.76
4.81
3.71
2.61
1.60
0.51
9.00
172.01
139.11
93.44
57.88
35.32
13.11
-4.62
-19.61
-29.62
-41.92
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
1.35 -112.95 -18.34 0.121 -107.41
1.20 -128.77 -18.56 0.118 -116.63
1.06 -145.23 -18.71 0.116 -126.02
0.94 -160.01 -18.71 0.116 -136.14
0.82 -176.05 -19.25 0.109 -146.13
-40.11 -0.55
-55.87 -1.68
ATF-35143 Typical Noise Parameters
VDS = 3 V, IDS = 10 mA
30
25
20
15
10
5
Freq.
GHz
Fmin
dB
Γopt
Rn/50
-
Ga
dB
Mag.
Ang.
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.12
0.16
0.17
0.22
0.26
0.28
0.33
0.39
0.49
0.60
0.71
0.81
0.92
1.03
1.13
0.87
0.82
0.81
0.75
0.71
0.68
0.62
0.57
0.49
0.43
0.38
0.36
0.34
0.34
0.35
4.7
13.2
15.3
25.9
32.3
36.5
47.7
59.6
85.4
113.6
143.7
175.6
-151.3
-117.3
-82.7
0.21
0.19
0.19
0.17
0.16
0.16
0.14
0.13
0.10
0.08
0.05
0.05
0.07
0.12
0.21
20.0
19.0
18.8
17.8
17.2
16.7
15.9
15.1
13.7
12.5
11.4
10.4
9.6
MSG
MAG
S
21
0
-5
0
5
10
15
20
FREQUENCY (GHz)
Figure 22. MSG/MAG and |S21|2 vs.
Frequency at 3 V, 10 mA.
8.9
8.4
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measure-
ments a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
11
ATF-35143 Typical Scattering Parameters, VDS = 3 V, IDS = 15 mA
Freq.
GHz
S11
S21
Mag.
S12
Mag.
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag.
Ang.
0.50
0.75
0.99
0.96
0.94
0.90
0.87
0.84
0.78
-19.76 17.20
-30.58 17.08
-40.14 16.86
-58.04 16.35
-66.61 16.06
-74.88 15.75
-91.02 15.13
7.24
7.14
6.97
6.57
6.35
6.13
5.71
5.31
4.59
4.00
3.53
3.14
2.81
2.50
2.26
2.03
1.82
1.60
164.03 -33.15 0.022
154.94 -29.90 0.032
147.12 -27.54 0.042
132.22 -24.58 0.059
125.16 -23.48 0.067
118.36 -22.62 0.074
105.32 -21.41 0.085
93.02 -20.45 0.102
70.17 -19.41 0.107
49.09 -18.79 0.115
29.39 -18.34 0.121
10.23 -18.06 0.125
-8.11 -17.92 0.127
-26.04 -17.86 0.128
-43.28 -17.72 0.130
-61.06 -17.59 0.132
-78.75 -17.59 0.132
-95.88 -17.79 0.129
76.95
69.88
64.59
54.00
49.23
44.39
35.29
27.00
11.47
-2.18
-15.36
-27.97
-38.89
-50.41
-60.57
-71.45
-83.32
-94.36
0.60
0.58
0.57
0.54
0.52
0.50
0.47
0.44
0.37
0.31 -107.23
0.24 -125.21
0.19 -145.42
0.14 -168.81
0.11
0.09
0.12
0.18
0.25
0.31
0.37
0.44
0.50
0.56
-14.39
-20.00
-26.48
-39.05
-45.00
-50.83
-61.71
-71.87
-89.81
25.17
23.47
22.20
20.47
19.78
19.19
18.27
17.47
16.32
15.42
14.66
14.00
12.23
10.87
10.16
9.55
8.80
7.86
7.09
7.04
6.09
5.87
5.41
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
0.73 -106.95 14.50
0.63 -138.86 13.24
0.58 -169.42 12.05
0.56
0.55
0.56
0.60
0.64
0.68
0.71
0.74
0.77
0.82
0.82
0.85
0.86
162.05 10.97
7.00
8.00
9.00
133.54
107.88
84.56
64.57
45.84
27.11
8.18
-5.58
-16.18
-28.41
9.93
8.96
7.95
7.06
6.16
5.19
4.09
2.98
1.96
0.88
158.79
118.59
75.36
46.94
27.91
7.94
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
1.41 -111.57 -18.06 0.125 -103.78
1.25 -127.09 -18.27 0.122 -113.43
1.11 -143.31 -18.42 0.120 -123.35
0.98 -157.87 -18.49 0.119 -134.06
0.87 -173.65 -18.86 0.114 -144.46
-8.87
-23.42
-32.96
-44.64
-40.49 -0.15
-56.20 -1.25
ATF-35143 Typical Noise Parameters
VDS = 3 V, IDS = 15 mA
30
25
20
15
10
5
Freq.
GHz
Fmin
dB
Γopt
Rn/50
-
Ga
dB
Mag.
Ang.
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.11
0.15
0.16
0.21
0.24
0.26
0.31
0.37
0.47
0.58
0.68
0.79
0.89
1.00
1.10
0.86
0.81
0.80
0.73
0.69
0.66
0.60
0.55
0.46
0.40
0.36
0.33
0.32
0.32
0.33
3.5
12.1
14.3
25.1
31.6
35.9
47.2
59.4
86.0
115.4
146.8
179.8
-146.1
-111.5
-76.8
0.17
0.16
0.16
0.15
0.14
0.20
0.17
0.15
0.11
0.07
0.05
0.05
0.07
0.13
0.22
21.2
19.9
19.6
18.2
17.6
17.2
16.3
15.6
14.2
12.9
11.8
10.8
10.0
9.3
MSG
MAG
S
21
0
-5
0
5
10
15
20
FREQUENCY (GHz)
Figure 23. MSG/MAG and |S21|2 vs.
Frequency at 3 V, 15 mA.
8.8
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measure-
ments a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
12
ATF-35143 Typical Scattering Parameters, VDS = 3 V, IDS = 30 mA
Freq.
GHz
S11
S21
Mag.
S12
Mag.
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag.
Ang.
0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
0.99
0.96
0.93
0.88
0.85
0.82
0.76
-21.01 18.45
-32.39 18.29
-42.42 18.03
-61.18 17.42
-70.01 17.09
-78.57 16.74
-95.09 16.03
8.36
8.21
7.97
7.43
7.15
6.87
6.33
5.83
4.97
4.29
3.76
3.32
2.96
2.63
2.37
2.13
1.90
1.67
163.08 -33.98 0.020
153.62 -30.46 0.030
145.49 -28.40 0.038
130.11 -25.35 0.054
122.91 -24.44 0.060
116.00 -23.61 0.066
102.87 -22.38 0.076
90.60 -21.41 0.085
68.04 -20.26 0.097
47.37 -19.58 0.105
28.09 -19.02 0.112
9.32 -18.64 0.117
-8.66 -18.34 0.121
-26.26 -18.06 0.125
-43.25 -17.79 0.129
-60.82 -17.52 0.133
-78.23 -17.46 0.134
-95.07 -17.65 0.131
76.89
69.94
64.80
54.32
49.77
45.15
36.87
29.08
14.96
2.38
-10.00
-22.21
-32.79
-44.11
-54.57
-66.16
-78.18
-89.74
-99.72
0.53
0.51
0.50
0.47
0.45
0.43
0.40
0.37
0.31
-15.23
-21.01
-27.72
-40.61
-46.56
-52.43
-63.37
-73.44
-91.21
26.21
24.36
23.22
21.39
20.72
20.17
19.21
18.36
17.10
16.11
15.26
13.78
12.10
11.00
10.36
9.76
0.70 -111.30 15.32
0.61 -143.48 13.93
0.56 -174.00 12.65
0.25 -108.94
0.19 -128.04
0.14 -151.53
0.54
0.54
0.55
0.59
0.63
0.67
0.71
0.74
0.77
0.82
0.82
0.85
0.87
157.98 11.50
130.06 10.42
105.20
82.53
63.18
44.96
26.64
7.94
9.42
8.39
7.49
6.56
5.58
4.46
3.36
2.33
1.25
0.23
0.11
0.09
0.09
0.14
0.20
0.27
0.34
0.39
0.46
0.51
0.57
179.40
138.30
95.15
62.17
39.86
23.41
5.08
-11.42
-25.74
-35.29
-46.81
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
9.05
8.14
7.40
7.41
6.44
6.19
5.71
-5.53
1.47 -110.42 -17.86 0.128
-16.02
-28.09
-40.02
1.31 -125.79 -17.99 0.126 -109.60
1.16 -141.72 -18.06 0.125 -120.39
1.03 -156.00 -18.06 0.125 -131.03
0.91 -171.48 -18.49 0.119 -141.69
-55.63 -0.85
ATF-35143 Typical Noise Parameters
VDS = 3 V, IDS = 30 mA
30
25
20
15
10
5
Freq.
GHz
Fmin
dB
Γopt
Rn/50
-
Ga
dB
Mag.
Ang.
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.11
0.16
0.17
0.23
0.27
0.28
0.35
0.41
0.53
0.66
0.79
0.91
1.04
1.17
1.29
0.87
0.81
0.79
0.72
0.68
0.65
0.59
0.53
0.43
0.37
0.33
0.31
0.31
0.33
0.38
3.5
12.5
14.7
25.9
32.6
37.1
49.3
62.5
91.6
123.4
157.1
-168.3
-133.7
-100.0
-68.1
0.18
0.17
0.17
0.16
0.15
0.15
0.14
0.12
0.09
0.07
0.05
0.06
0.10
0.17
0.28
21.6
20.5
20.2
18.9
18.3
17.9
17.0
16.3
14.9
13.6
12.4
11.4
10.6
9.9
MSG
MAG
S
21
0
-5
0
5
10
15
20
FREQUENCY (GHz)
Figure 24. MSG/MAG and |S21|2 vs.
Frequency at 3 V, 30 mA.
9.3
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measure-
ments a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
13
ATF-35143 Typical Scattering Parameters, VDS = 4 V, IDS = 30 mA
Freq.
GHz
S11
S21
Mag.
S12
Mag.
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag.
Ang.
0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
0.99
0.96
0.94
0.88
0.85
0.82
0.76
-21.11 18.54
-32.57 18.38
-42.70 18.13
-61.55 17.53
-70.46 17.20
-79.07 16.84
-95.78 16.14
8.45
8.30
8.07
7.53
7.24
6.95
6.41
5.91
5.03
4.34
3.81
3.37
3.00
2.67
2.41
2.17
1.95
1.72
163.20 -33.98 0.020
153.72 -30.75 0.029
145.56 -28.64 0.037
130.19 -25.68 0.052
123.00 -24.58 0.059
116.04 -23.88 0.064
102.91 -22.62 0.074
90.63 -21.72 0.082
68.03 -20.72 0.092
47.35 -20.00 0.100
28.07 -19.49 0.106
9.35 -19.25 0.109
-8.62 -18.94 0.113
-26.19 -18.79 0.115
-43.13 -18.49 0.119
-60.63 -18.27 0.122
-78.09 -18.13 0.124
-95.00 -18.27 0.122
77.63
70.15
64.68
53.94
49.29
44.64
36.30
28.32
13.98
1.12
-11.07
-23.07
-33.33
-44.34
-54.44
-65.68
-77.35
-88.59
-98.13
0.56
0.54
0.53
0.50
0.48
0.46
0.43
0.40
0.34
0.28 -104.23
0.22 -120.69
0.17 -139.29
0.13 -160.54
0.09
0.07
0.09
0.15
0.22
0.28
0.34
0.40
0.46
0.52
-14.66
-20.35
-26.91
-39.45
-45.29
-50.94
-61.54
-71.17
-87.95
26.26
24.55
23.38
21.61
20.90
20.36
19.38
18.58
17.38
16.38
15.55
14.19
12.47
11.33
10.70
10.10
9.40
0.71 -112.14 15.43
0.62 -144.46 14.04
0.57 -174.93 12.76
0.55
0.55
0.57
0.60
0.64
0.68
0.72
0.74
0.77
0.82
0.82
0.85
0.86
157.13 11.61
129.56 10.54
104.96
82.47
63.23
45.01
26.69
8.00
9.55
8.53
7.64
6.74
5.79
4.71
3.64
2.65
1.62
0.64
9.00
169.67
128.74
78.47
47.96
28.53
8.38
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
8.47
7.69
7.76
6.75
6.53
6.00
-5.46
1.52 -110.50 -18.42 0.120
-16.18
-28.39
-40.51
1.36 -126.04 -18.49 0.119 -108.03
1.21 -142.14 -18.49 0.119 -118.41
1.08 -156.61 -18.49 0.119 -129.54
0.95 -172.55 -18.86 0.114 -140.19
-8.46
-22.93
-32.29
-43.97
-56.36 -0.44
ATF-35143 Typical Noise Parameters
VDS = 4 V, IDS = 30 mA
30
25
20
15
10
5
Freq.
GHz
Fmin
dB
Γopt
Rn/50
-
Ga
dB
Mag.
Ang.
MSG
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.10
0.14
0.16
0.21
0.25
0.28
0.33
0.38
0.49
0.62
0.74
0.87
0.99
1.11
1.24
0.90
0.85
0.83
0.77
0.73
0.70
0.64
0.58
0.48
0.40
0.35
0.32
0.31
0.34
0.39
3.5
12.5
14.7
25.9
32.6
37.1
49.1
62.0
90.3
121.2
154.0
-172.2
-138.0
-104.2
-71.6
0.22
0.21
0.20
0.18
0.17
0.17
0.15
0.14
0.10
0.07
0.05
0.06
0.09
0.15
0.26
20.7
19.7
19.5
18.4
17.8
17.5
16.7
16.0
14.7
13.5
12.5
11.5
10.7
10.0
9.5
MAG
S
21
0
-5
0
5
10
15
20
FREQUENCY (GHz)
Figure 25. MSG/MAG and |S21|2 vs.
Frequency at 4 V, 30 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measure-
ments a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
14
ATF-35143 Typical Scattering Parameters, VDS = 4 V, IDS = 60 mA
Freq.
GHz
S11
S21
Mag.
S12
Mag.
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag.
Ang.
0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
0.99
0.96
0.94
0.88
0.85
0.82
0.76
-21.27 18.15
-32.77 17.99
-42.95 17.74
-61.92 17.13
-70.88 16.79
-79.55 16.45
-96.36 15.74
8.09
7.94
7.71
7.19
6.91
6.64
6.12
5.64
4.81
4.15
3.64
3.21
2.87
2.55
2.30
2.08
1.87
1.65
163.09 -34.89 0.018
153.59 -31.70 0.026
145.40 -29.37 0.034
129.98 -26.56 0.047
122.76 -25.51 0.053
115.80 -24.73 0.058
102.60 -23.48 0.067
90.26 -22.62 0.074
67.52 -21.51 0.084
46.76 -20.82 0.091
27.45 -20.26 0.097
8.68 -19.83 0.102
-9.34 -19.41 0.107
-27.02 -19.09 0.111
-44.01 -18.71 0.116
-61.57 -18.27 0.122
-79.17 -17.92 0.127
-96.36 -17.92 0.127
77.28
70.40
65.05
55.14
50.40
46.34
38.10
30.61
17.18
5.47
0.54
0.53
0.51
0.48
0.47
0.45
0.42
0.39
0.34
0.29
0.24 -107.07
0.19 -121.43
0.15 -137.04
0.11 -156.16
0.07
0.06
0.10
0.18
0.25
0.31
0.39
0.46
0.52
-13.50
-18.54
-24.50
-35.90
-41.17
-46.33
-55.86
-64.53
-79.32
-93.48
26.52
24.83
23.55
21.84
21.15
20.59
19.61
18.82
17.58
16.59
15.74
13.17
11.94
10.99
10.38
9.88
0.70 -112.86 15.03
0.61 -145.47 13.64
0.57 -176.15 12.35
0.55
0.55
0.57
0.60
0.64
0.69
0.72
0.75
0.78
0.83
0.84
0.87
0.88
155.85 11.21
128.25 10.14
-5.83
-17.10
-26.34
-36.93
-46.43
-57.09
-68.92
-80.43
-90.26
103.61
81.11
62.01
43.90
25.78
7.31
9.16
8.14
7.25
6.37
5.43
4.37
3.30
2.29
1.25
0.21
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
178.65
113.63
60.75
35.69
13.24
-4.12
-19.12
-28.89
-40.92
9.26
8.35
7.57
7.78
6.73
6.65
6.06
-6.12
1.46 -112.19 -17.92 0.127
-16.62
-28.78
-40.91
1.30 -127.94 -17.86 0.128 -100.79
1.16 -144.27 -17.79 0.129 -112.14
1.03 -159.19 -17.79 0.129 -123.71
0.90 -175.28 -17.99 0.126 -134.88
-56.66 -0.92
ATF-35143 Typical Noise Parameters
VDS = 4 V, IDS = 60 mA
30
25
20
15
10
5
Freq.
GHz
Fmin
dB
Γopt
Rn/50
-
Ga
dB
Mag.
Ang.
MSG
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.22
0.30
0.32
0.42
0.48
0.52
0.63
0.73
0.94
1.15
1.35
1.56
1.77
1.98
2.18
0.84
0.78
0.77
0.70
0.65
0.63
0.56
0.51
0.44
0.40
0.39
0.40
0.43
0.47
0.53
4.4
15.6
18.4
32.4
40.8
46.4
61.0
76.6
109.9
144.8
-179.8
-145.5
-113.7
-85.6
-62.6
0.29
0.29
0.28
0.26
0.25
0.24
0.21
0.19
0.13
0.09
0.08
0.13
0.26
0.48
0.79
22.5
21.3
21.0
19.8
19.2
18.8
17.8
17.0
15.5
14.1
12.9
11.9
11.0
10.3
9.8
MAG
S
21
0
-5
0
5
10
15
20
FREQUENCY (GHz)
Figure 26. MSG/MAG and |S21|2 vs.
Frequency at 4 V, 60 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measure-
ments a true Fmin is calculated. Refer to the noise parameter application section for more information.
3. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
15
presented with Γo. If the reflec-
tion coefficient of the matching
network is other than Γo, then the
noise figure of the device will be
greater than Fmin based on the
following equation.
Typically for FETs, the higher Γo
usually infers that an impedance
much higher than 50Ω is required
for the device to produce Fmin. At
VHF frequencies and even lower
L Band frequencies, the required
impedance can be in the vicinity
of several thousand ohms.
Matching to such a high imped-
ance requires very hi-Q compo-
nents in order to minimize circuit
losses. As an example at 900 MHz,
when airwwound coils (Q>100)
are used for matching networks,
the loss can still be up to 0.25 dB
which will add directly to the
Noise Parameter
Applications Information
Fmin values at 2 GHz and higher
are based on measurements while
the Fmins below 2 GHz have been
extrapolated. The Fmin values are
based on a set of 16 noise figure
measurements made at 16
different impedances using an
ATN NP5 test system. From these
measurements, a true Fmin is
calculated. Fmin represents the
true minimum noise figure of the
device when the device is pre-
sented with an impedance
matching network that trans-
forms the source impedance,
typically 50Ω, to an impedance
represented by the reflection
coefficient Γo. The designer must
design a matching network that
will present Γo to the device with
minimal associated circuit losses.
The noise figure of the completed
amplifier is equal to the noise
figure of the device plus the
NF = Fmin + 4 Rn
|Γs – Γo | 2
Zo (|1 + Γo|2)(1–Γs|2)
Where Rn/Zo is the normalized
noise resistance, Γo is the opti-
mum reflection coefficient
required to produce Fmin and Γs is
the reflection coefficient of the
source impedance actually
presented to the device. The
losses of the matching networks
are non-zero and they will also
add to the noise figure of the
device creating a higher amplifier
noise figure. The losses of the
matching networks are related to
the Q of the components and
associated printed circuit board
loss. Γo is typically fairly low at
higher frequencies and increases
as frequency is lowered. Larger
gate width devices will typically
have a lower Γo as compared to
narrower gate width devices.
noise figure of the device. Using
muiltilayer molded inductors with
Qs in the 30 to 50 range results in
additional loss over the airwound
coil. Losses as high as 0.5 dB or
greater add to the typical 0.15 dB
F
min of the device creating an
amplifier noise figure of nearly
0.65 dB. A discussion concerning
calculated and measured circuit
losses and their effect on ampli-
fier noise figure is covered in
Agilent Application 1085.
losses of the matching network
preceding the device. The noise
figure of the device is equal to
Fmin only when the device is
16
ATF-35143 SC-70 4 Lead, High Frequency Model
Optimized for 0.1– 6.0 GHz
R
EQUATION La=0.1 nH
EQUATION Lb=0.1 nH
EQUATION Lc=0.8 nH
EQUATION Ld=0.6 nH
EQUATION Rb=0.1 OH
EQUATION Ca=0.15 pF
EQUATION Cb=0.15 pF
R=0.1 OH
LOSSYL
L=Lb
R=Rb
L
LOSSYL
L
LOSSYL
L=Lb
SOURCE
GATE_IN
SOURCE
L=Lb
R=Rb
L=La .5
*
L=Lc
R=Rb
D
S
C=Cb
C
C=Ca
C
G
L
L
LOSSYL
LOSSYL
DRAIN_OUT
L=Lb
R=Rb
L=Lb
R=Rb
L=Ld
L=La
This model can be used as a
the measured data in this data
sheet. For future improvements
Agilent reserves the right to
change these models without
prior notice.
design tool. It has been tested on
MDS for various specifications.
However, for more precise and
accurate design, please refer to
ATF-35143 Die Model
STATZ MESFET MODEL
*
*
MODEL = FET
IDS model
NFET=yes
PFET=
IDSMOD=3
VTO=–0.95
BETA= Beta
LAMBDA=0.09
ALPHA=4.0
B=0.8
Gate model
DELTA=.2
GSCAP=3
CGS=cgs pF
GDCAP=3
GCD=Cgd pF
Parasitics
Breakdown
GSFWD=1
GSREV=0
GDFWD=1
GDREV=0
VJR=1
IS=1 nA
IR=1 nA
IMAX=.1
XTI=
Noise
FNC=01e+6
R=.17
P=.65
C=.2
RG=1
RD=Rd
RS=Rs
LG=Lg nH
LD=Ld nH
LS=Ls nH
CDS=Cds pF
CRF=.1
TNOM=27
IDSTC=
VBI=.7
RC=Rc
N=
EG=
Model scal factors (W=FET width in microns)
EQUATION Cds=0.01 W/200
EQUATION Beta=0.06 W/200
*
EQUATION Rd=200/W
D
*
NFETMESFET
EQUATION Rs=.5 200/W
*
EQUATION Cgs=0.2 W/200
*
G
MODEL=FET
EQUATION Cgd=0.04 W/200
*
EQUATION Lg=0.03 200/W
*
S
S
EQUATION Ld=0.03 200/W
*
EQUATION Ls=0.01 200/W
*
W=400 µm
EQUATION Rc=500 200/W
*
17
Part Number Ordering Information
No. of
Part Number
ATF-35143-TR1
ATF-35143-TR2
ATF-35143-BLK
Devices
Container
7" Reel
3000
10000
100
13" Reel
antistatic bag
Package Dimensions
Outline 43 (SOT-343/SC-70 4 lead)
1.30 (0.051)
BSC
1.30 (.051) REF
2.60 (.102)
E
1.30 (.051)
E1
0.85 (.033)
0.55 (.021) TYP
1.15 (.045) BSC
e
1.15 (.045) REF
D
h
A
A1
b TYP
C TYP
L
θ
DIMENSIONS
SYMBOL
MIN.
MAX.
A
A1
b
0.80 (0.031)
0 (0)
1.00 (0.039)
0.10 (0.004)
0.35 (0.014)
0.20 (0.008)
2.10 (0.083)
2.20 (0.087)
0.65 (0.025)
0.25 (0.010)
0.10 (0.004)
1.90 (0.075)
2.00 (0.079)
0.55 (0.022)
C
D
E
e
h
0.450 TYP (0.018)
E1
L
1.15 (0.045)
0.10 (0.004)
0
1.35 (0.053)
0.35 (0.014)
10
θ
DIMENSIONS ARE IN MILLIMETERS (INCHES)
18
Device Orientation
REEL
TOP VIEW
4 mm
END VIEW
CARRIER
TAPE
8 mm
5PX
5PX
5PX
5PX
USER
FEED
DIRECTION
COVER TAPE
Tape Dimensions
For Outline 4T
P
P
D
2
P
0
E
F
W
C
D
1
t
(CARRIER TAPE THICKNESS)
T (COVER TAPE THICKNESS)
t
1
K
8° MAX.
5° MAX.
0
A
B
0
0
DESCRIPTION
SYMBOL
SIZE (mm)
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
A
B
K
P
D
2.24 0.10
2.34 0.10
1.22 0.10
4.00 0.10
1.00 + 0.25
0.088 0.004
0.092 0.004
0.048 0.004
0.157 0.004
0.039 + 0.010
0
0
0
BOTTOM HOLE DIAMETER
1
0
PERFORATION
DIAMETER
PITCH
POSITION
D
P
E
1.55 0.05
4.00 0.10
1.75 0.10
0.061 0.002
0.157 0.004
0.069 0.004
CARRIER TAPE WIDTH
THICKNESS
W
8.00 0.30
0.315 0.012
t
0.255 0.013 0.010 0.0005
5.4 0.10 0.205 0.004
0.062 0.001 0.0025 0.00004
1
COVER TAPE
WIDTH
C
TAPE THICKNESS
T
t
DISTANCE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 0.05
0.138 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P
2
2.00 0.05
0.079 0.002
www.agilent.com/semiconductors
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Data subject to change.
Copyright © 2002 Agilent Technologies, Inc.
Obsoletes 5968-7826EN
September 20, 2002
5988-7943EN
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