DEMO-HMPP-38X0 [ETC]

Demonstration circuit board for the HMPP-3860 and HMPP-3890 ; 演示电路板为HMPP - 3860和HMPP - 3890\n
DEMO-HMPP-38X0
型号: DEMO-HMPP-38X0
厂家: ETC    ETC
描述:

Demonstration circuit board for the HMPP-3860 and HMPP-3890
演示电路板为HMPP - 3860和HMPP - 3890\n

文件: 总11页 (文件大小:160K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Agilent HMPP-389x Series  
MiniPak Surface Mount  
RF PIN Switch Diodes  
Data Sheet  
Features  
• Surface mount MiniPak package  
– low height, 0.7 mm (0.028") max.  
– small footprint, 1.75 mm2  
(0.0028 inch2)  
• Better thermal conductivity for  
higher power dissipation  
• Single and dual versions  
Low junction capacitance of the  
PIN diode chip, combined with  
ultra low package parasitics, mean  
that these products may be used  
at frequencies which are higher  
than the upper limit for conven-  
tional PIN diodes.  
Description/Applications  
These ultra-miniature products  
represent the blending of Agilent  
Technologies’ proven semiconduc-  
tor and the latest in leadless  
packaging technology.  
• Matched diodes for consistent  
performance  
• Low capacitance  
• Low resistance at low current  
• Low FIT (Failure in Time) rate*  
• Six-sigma quality level  
The HMPP-389x series is optimized  
for switching applications where  
low resistance at low current and  
low capacitance are required. The  
MiniPak package offers reduced  
parasitics when compared to  
conventional leaded diodes, and  
lower thermal resistance.  
Note that Agilents manufacturing  
techniques assure that dice  
packaged in pairs are taken from  
adjacent sites on the wafer,  
assuring the highest degree of  
match.  
*
For more information, see the Surface  
Mount Schottky Reliability Data Sheet.  
Pin Connections and  
Package Marking  
The HMPP-389T low inductance  
wide band shunt switch is well  
suited for applications up to 6 GHz.  
3
4
1
AA  
2
Package Lead Code Identification  
(Top View)  
Product code Date code  
Notes:  
1. Package marking provides orientation and  
identification.  
2. See “Electrical Specifications” for  
appropriate package marking.  
Single  
Anti-parallel  
Parallel  
Shunt Switch  
Cathode  
Anode  
3
2
4
1
3
2
4
1
3
2
4
1
3
4
1
2
Anode  
Cathode  
#0  
#2  
#5  
T
HMPP-389x Series Absolute Maximum Ratings[1], TC = 25°C  
ESD WARNING:  
Handling Precautions Should Be  
Taken To Avoid Static Discharge.  
Symbol  
Parameter  
Units  
Value  
If  
Forward Current (1 µs pulse)  
Peak Inverse Voltage  
Junction Temperature  
Storage Temperature  
Thermal Resistance[2]  
Amp  
V
1
PIV  
Tj  
100  
°C  
150  
Tstg  
θjc  
°C  
-65 to +150  
150  
°C/W  
Notes:  
1. Operation in excess of any one of these conditions may result in permanent damage to the  
device.  
2. TC = +25°C, where TC is defined to be the temperature at the package pins where contact is  
made to the circuit board.  
Electrical Specifications, TC = +25°C, each diode  
Part Number  
HMPP-  
Package  
Marking Code  
Minimum Breakdown  
Voltage (V)  
Maximum Series  
Resistance ()  
Maximum Total  
Capacitance (pF)  
Lead Code  
Configuration  
3890  
3892  
3895  
389T  
D
C
B
T
0
2
5
T
Single  
Anti-parallel  
Parallel  
100  
2.5  
0.30  
Shunt Switch  
Test Conditions  
VR = VBR  
IF = 5 mA  
VR = 5V  
Measure IR 10 µA  
f = 100 MHz  
f = 1 MHz  
Typical Parameters, TC = +25°C  
Part Number  
HMPP-  
Series Resistance  
RS ()  
Carrier Lifetime  
τ (ns)  
Total Capacitance  
CT (pF)  
389x  
3.8  
200  
0.20 @ 5V  
Test Conditions  
IF = 1 mA  
f = 100 MHz  
IF = 10 mA  
IR = 6 mA  
2
HMPP-389x Series Typical Performance, Tc = 25°C, each diode  
0.50  
120  
115  
110  
105  
100  
95  
Diode Mounted as a  
Series Attenuator in a  
50 Ohm Microstrip and  
Tested at 123 MHz  
0.45  
10  
0.40  
Intercept point  
will be higher  
at higher  
0.35  
0.30  
0.25  
frequencies  
1
1 MHz  
90  
0.20  
0.15  
1 GHz  
4
85  
0
8
12  
16  
20  
1
10  
30  
0.1  
1
10  
100  
I FORWARD BIAS CURRENT (mA)  
I
FORWARD BIAS CURRENT (mA)  
V
REVERSE VOLTAGE (V)  
F
F
R
Figure 1. Total RF Resistance at 25°C vs.  
Forward Bias Current.  
Figure 2. Capacitance vs. Reverse Voltage.  
Figure 3. 2nd Harmonic Input Intercept Point  
vs. Forward Bias Current.  
200  
160  
100  
10  
1
V
= 2V  
R
120  
80  
V
= 5V  
R
0.1  
40  
0
V
= 10V  
R
25°C 50°C  
125°C  
0.4  
FORWARD VOLTAGE (V)  
0.01  
10  
15  
20  
25  
30  
0
0.2  
0.6  
0.8  
1.0  
1.2  
FORWARD CURRENT (mA)  
V
F
Figure 4. Typical Reverse Recovery Time vs.  
Reverse Voltage.  
Figure 5. Forward Current vs. Forward Voltage.  
Typical Applications  
RF COMMON  
RF COMMON  
3
4
2
1
3
4
1
3
2
4
1
RF 1  
RF 2  
RF 1  
RF 2  
2
BIAS 1  
BIAS 2  
BIAS  
Figure 6. Simple SPDT Switch Using Only Positive Bias.  
Figure 7. High Isolation SPDT Switch Using Dual Bias.  
3
RF COMMON  
Diode Construction  
At Agilent Technologies, two basic  
methods of diode fabrication are  
used. In the case of bulk diodes, a  
wafer of very pure (intrinsic)  
silicon is heavily doped on the top  
and bottom faces to form P and N  
regions. The result is a diode with  
a very thick, very pure I region.  
The epitaxial layer (or EPI) diode  
starts as a wafer of heavily doped  
silicon (the P or N layer), onto  
which a thin I layer is grown.  
After the epitaxial growth, diffu-  
sion is used to add a heavily doped  
(N or P) layer on the top of the epi,  
creating a diode with a very thin I  
layer populated by a relatively  
large number of imperfections.  
1
2
4
3
3
2
4
1
3
2
4
1
RF 2  
RF 1  
BIAS  
Figure 8. Very High Isolation SPDT Switch, Dual Bias.  
Applications Information  
matched input impedance (low  
VSWR) to the source. Every  
microwave network which uses  
PIN diodes (phase shifter, modula-  
tor, etc.) is a variation on one of  
these two basic circuits.  
PIN Diodes  
In RF and microwave networks,  
mechanical switches and attenua-  
tors are bulky, often unreliable,  
and difficult to manufacture.  
Switch ICs, while convenient to  
use and low in cost in small  
quantities, suffer from poor  
distortion performance and are  
not as cost effective as PIN diode  
switches and attenuators in very  
large quantities. For over 30 years,  
designers have looked to the PIN  
diode for high performance/low  
cost solutions to their switching  
and level control needs.  
These two different methods of  
design result in two classes of  
diode with distinctly different  
characteristics, as shown in  
Table 1.  
One can see that the switch and  
the attenuator are quite different  
in their function, and will there-  
fore often require different  
characteristics in their PIN diodes.  
These properties are easily  
controlled through the way in  
which a PIN diode is fabricated.  
See Figure 9.  
As we shall see in the following  
paragraphs, the bulk diode is  
almost always used for attenuator  
applications and sometimes as a  
switch, while the epi diode (such  
as the HMPP-3890) is generally  
used as a switching element.  
Bulk  
N+ Diffusion  
I-Layer  
Metal Contact  
In the RF and microwave ranges,  
the switch serves the simple  
Diode Lifetime and Its Implications  
The resistance of a PIN diode is  
controlled by the conductivity (or  
resistivity) of the I layer. This  
conductivity is controlled by the  
density of the cloud of carriers  
(charges) in the I layer (which is, in  
turn, controlled by the DC bias).  
Minority carrier lifetime, indicated  
by the Greek symbol τ, is a  
purpose which is implied by its  
name; it operates between one of  
two modes, ON or OFF. In the ON  
state, the switch is designed to  
have the least possible loss. In the  
OFF state, the switch must exhibit  
a very high loss (isolation) to the  
input signal, typically from 20 to  
60 dB. The attenuator, however,  
serves a more complex function.  
It provides for the softor  
Bulk Attenuator Diode  
Epi Switching Diode  
P+ Diffusion  
N+ Substrate  
Epi  
I-Layer  
Contact Over  
P+ Diffusion  
Figure 9. PIN Diode Construction.  
Table 1. Bulk and EPI Diode Characteristics.  
controlled variation in the power  
level of a RF or microwave signal.  
At the same time as it attenuates  
the input signal to some predeter-  
mined value, it must also present a  
Characteristic  
EPI Diode  
Bulk Diode  
Lifetime  
Short  
High  
Long  
Low  
Distortion  
Current Required  
I Region Thickness  
Low  
High  
Thick  
Very Thin  
4
measure of the time it takes for the Thus, for a given current and  
Linear Equivalent Circuit  
charge stored in the I layer to  
decay, when forward bias is  
replaced with reverse bias, to some resistance than the bulk diode.  
junction capacitance, the epi  
diode will always have a lower  
In order to predict the perfor-  
mance of the HMPP-3890 as a  
switch, it is necessary to construct  
a model which can then be used in  
one of the several linear analysis  
programs presently on the market.  
predetermined value. This lifetime  
can be short (35 to 200 nsec. for  
epitaxial diodes) or it can be  
relatively long (400 to 3000 nsec.  
for bulk diodes). Lifetime has a  
strong influence over a number of  
PIN diode parameters, among  
which are distortion and basic  
diode behavior.  
The thin epi diode, with its  
physically small I region, can  
easily be saturated (taken to the  
point of minimum resistance) with Such a model is given in Figure 11,  
very little current compared to the where RS + Rj is given in Figure 1  
much larger bulk diode. While an  
epi diode is well saturated at  
currents around 10 mA, the bulk  
diode may require upwards of  
100 mA or more. Moreover, epi  
diodes can achieve reasonable  
values of resistance at currents of  
and Cj is provided in Figure 2.  
Careful examination of Figure 11  
will reveal the fact that the  
package parasitics (inductance  
and capacitance) are much lower  
for the MiniPak than they are for  
leaded plastic packages such as  
the SOT-23, SOT-323 or others.  
This will permit the HMPP-389x  
family to be used at higher fre-  
quencies than its conventional  
leaded counterparts.  
To study the effect of lifetime on  
diode behavior, we first define a  
cutoff frequency fC = 1/τ. For short 1 mA or less, making them ideal  
lifetime diodes, this cutoff fre-  
quency can be as high as 30 MHz  
while for our longer lifetime  
diodes fC 400 KHz. At frequen-  
cies which are ten times fC (or  
more), a PIN diode does indeed  
act like a current controlled  
variable resistor. At frequencies  
for battery operated applications.  
Having compared the two basic  
types of PIN diode, we will now  
focus on the HMPP-3890 epi  
diode.  
20 fF  
3
4
Given a thin epitaxial I region, the  
diode designer can trade off the  
30 fF  
30 fF  
2
1.1 nH  
1
which are one tenth (or less) of fC, devices total resistance (RS + Rj)  
a PIN diode acts like an ordinary  
PN junction diode. Finally, at  
and junction capacitance (Cj) by  
varying the diameter of the  
20 fF  
Single diode package (HMPP-3890)  
0.1fC f 10fC, the behavior of the contact and I region. The  
20 fF  
diode is very complex. Suffice it to HMPP-3890 was designed with the  
0.05 nH  
0.5 nH  
0.5 nH  
0.5 nH  
0.05 nH  
mention that in this frequency  
range, the diode can exhibit very  
strong capacitive or inductive  
reactanceit will not behave at  
930 MHz cellular and RFID, the  
1.8 GHz PCS and 2.45 GHz RFID  
markets in mind. Combining the  
low resistance shown in Figure 10  
3
2
4
1
12 fF  
30 fF  
30 fF  
0.05 nH  
0.5 nH  
0.05 nH  
all like a resistor. However, at zero with a typical total capacitance of  
20 fF  
bias or under heavy forward bias,  
all PIN diodes demonstrate very  
high or very low impedance  
(respectively) no matter what  
their lifetime is.  
0.27 pF, it forms the basis for high  
performance, low cost switching  
networks.  
Anti-parallel diode package (HMPP-3892)  
20 fF  
0.05 nH  
0.5 nH  
0.5 nH  
0.5 nH  
0.05 nH  
3
2
4
1
1000  
12 fF  
30 fF  
30 fF  
0.05 nH  
HSMP-3880 Bulk PIN Diode  
0.5 nH  
0.05 nH  
Diode Resistance vs. Forward Bias  
If we look at the typical curves for  
resistance vs. forward current for  
bulk and epi diodes (see Figure  
10), we see that they are very  
different. Of course, these curves  
apply only at frequencies > 10 fC.  
One can see that the curve of  
100  
10  
20 fF  
Parallel diode package (HMPP-3895)  
Figure 11. Linear Equivalent Circuit of the  
MiniPak PIN Diode.  
HMPP-389x  
Epi PIN Diode  
1
resistance vs. bias current for the  
bulk diode is much higher than  
that for the epi (switching) diode.  
0.01  
0.1  
1
10  
100  
BIAS CURRENT (mA)  
Figure 10. Resistance vs, Forward Bias.  
5
Testing the HMPP-389T on the  
Demo-board  
Demo-board Preparation  
Test Results  
Since the performance of the  
shunt switch is ultimately limited  
by the demo-board, a short  
discussion of the constructional  
aspects will be beneficial. Edge-  
mounted SMA connectors  
(Johnson #142-0701-881) were  
mounted on both the reference  
and test lines. A special mounting  
technique has been used to  
minimize reflection at the pcb to  
connector interface. Prior to  
mounting, the connector pins  
were cut down to two pin diam-  
eters in length. Subsequently, the  
connector fingers were soldered  
to the upper ground plane (Figure  
13). Solder was filled between the  
connector body and fingers on the  
lower ground plane until the small  
crescent of exposed teflon was  
completely covered (Figure 14).  
Measurements of the reference  
lines return and insertion losses  
were used to gauge the effective-  
ness of the VSWR mitigating steps.  
In our prototype, the worst case  
return loss of the reference line  
was 20 dB at 5 GHz (Figure 15).  
Introduction  
The HMPP-389T PIN diode is a  
high frequency shunt switch. It  
has been designed as a smaller  
and higher performance version of  
the HSMP-389T (SC-70 package).  
-18  
-22  
-26  
-30  
-34  
-38  
The DEMO-HMPP-389T demo-  
board allows customers to evalu-  
ate the performance of the  
HMPP-389T without having to  
fabricate their own PCB. Since a  
shunt switchs isolation is limited  
primarily by its parasitic induc-  
tance, the products true potential  
cannot be shown if a conventional  
microstrip pcb is used. In order to  
overcome this problem, a coplanar  
waveguide over ground-plane  
structure is used for the demo-  
board. The bottom ground-plane is  
connected to the upper ground  
traces using multiple via-holes.  
1
2
3
4
5
6
FREQUENCY (GHz)  
Figure 15. Swept return loss of reference line.  
Insertion loss of the reference was  
very low and generally, increased  
with frequency (Figure 16). If the  
demo-board has been constructed  
carefully, there should not be any  
evidence of resonance. The  
reference lines insertion loss  
trace can be stored in the VNAs  
display memory and used to  
correct for the insertion loss of  
the test line in the subsequent  
measurements.  
A 50reference line is provided at  
the top to calibrate the board loss.  
The bottom line allows the  
HMPP-389T diode to be tested as  
a shunt switch.  
reference line  
Figure 13. Soldering details of connector  
fingers to upper ground plane.  
Agilent  
SK063A  
test line  
HMPP-389T  
Figure 14. Soldering details of connector  
fingers to lower ground plane.  
Figure 12. Demo-board DEMO-HMPP-389T.  
6
0
-0.2  
-0.4  
-0.6  
-0.8  
-1.0  
Normalization was used to remove The PIN diodes resistance is a  
the pcbs and connectorslosses  
from the measurement of the  
shunt switchs loss. The active  
trace was divided by the memo-  
rized trace (Data/Memory) to  
produce the normalized data. At  
zero bias, the insertion loss was  
under 0.6 dB up to 6 GHz (Figure  
18). Applying a reverse bias to the  
PIN diode has the effect of  
function of the bias current. So, at  
higher forward current, the  
isolation improved. The combina-  
tion of the HMPP-389T and the  
SK063A demoboard exhibited  
more than 17 dB of isolation from  
1 to 6 GHz at If 1mA (Figure 20).  
-10  
0.15 mA  
1
2
3
4
5
6
0.25 mA  
-14  
reducing its parasitic capacitance.  
With a reverse bias of -20V, the  
insertion loss improved to better  
than 0.5 dB (Figure 19).  
FREQUENCY (GHz)  
0.5 mA  
-18  
-22  
-26  
-30  
1 mA  
Figure 16. Insertion loss of reference line.  
1.5 mA  
To evaluate the HMPP-389T as  
0
-0.2  
-0.4  
-0.6  
-0.8  
-1.0  
shunt switch, it was mounted on  
the test line and then the appropri-  
ate biasing voltage was applied. In  
our prototype, the worst case  
return loss was 10 dB at 5 GHz  
(Figure 17). The return loss varied  
very little when the bias was  
20 mA  
1
2
3
4
5
6
FREQUENCY (GHz)  
Figure 20. Isolation at different frequencies  
with forward current as a parameter.  
changed from zero to -20V.  
The combination of the  
-5  
-15  
-25  
-35  
-45  
-55  
HMPP-389T and the demo-board  
allows a high performance shunt  
switch to be constructed swiftly  
and economically. The extremely  
low parasitic inductance of the  
package allows the switch to  
operate over a very wide fre-  
quency range.  
1
2
3
4
5
6
FREQUENCY (GHz)  
Figure 18. Insertion loss of HMPP-389T at 0V.  
0
-0.2  
-0.4  
-0.6  
-0.8  
-1.0  
1
2
3
4
5
6
FREQUENCY (GHz)  
Figure 17. Return loss of HMPP-389T mounted  
on test line at 0V and -20V bias.  
1
2
3
4
5
6
FREQUENCY (GHz)  
Figure 19. Insertion loss of HMPP-389T at -20V.  
7
SMT Assembly  
passes through one or more  
Assembly Information  
Reliable assembly of surface  
mount components is a complex  
process that involves many  
material, process, and equipment  
factors, including: method of  
heating (e.g., IR or vapor phase  
reflow, wave soldering, etc.)  
circuit board material, conductor  
thickness and pattern, type of  
solder alloy, and the thermal  
conductivity and thermal mass of  
components. Components with a  
low mass, such as the MiniPak  
package, will reach solder reflow  
temperatures faster than those  
with a greater mass.  
preheat zones. The preheat zones  
increase the temperature of the  
board and components to prevent  
thermal shock and begin evaporat-  
ing solvents from the solder paste.  
The reflow zone briefly elevates  
the temperature sufficiently to  
produce a reflow of the solder.  
The MiniPak diode is mounted to  
the PCB or microstrip board using  
the pad pattern shown in  
Figure 21.  
0.4  
0.5  
0.4  
0.3  
0.5  
0.3  
The rates of change of tempera-  
ture for the ramp-up and cool-  
down zones are chosen to be low  
enough to not cause deformation  
of the board or damage to compo-  
nents due to thermal shock. The  
maximum temperature in the  
reflow zone (TMAX) should not  
exceed 255°C.  
Figure 21. PCB Pad Layout, MiniPak  
(dimensions in mm).  
Agilents diodes have been quali-  
fied to the time-temperature  
profile shown in Figure 23. This  
profile is representative of an IR  
reflow type of surface mount  
assembly process.  
This mounting pad pattern is  
satisfactory for most applications.  
However, there are applications  
where a high degree of isolation is  
required between one diode and  
the other is required. For such  
applications, the mounting pad  
pattern of Figure 22 is  
These parameters are typical for a  
surface mount assembly process  
for Agilent diodes. As a general  
guideline, the circuit board and  
components should be exposed  
only to the minimum temperatures  
and times necessary to achieve a  
uniform reflow of solder.  
After ramping up from room  
temperature, the circuit board  
with components attached to it  
(held in place with solder paste)  
recommended.  
0.40 mm via hole  
(4 places)  
350  
300  
0.20  
Peak Temperature  
Min. 240°C  
2.40  
0.8  
Max. 255°C  
250  
221  
200  
Reflow Time  
Min. 60 s  
Max. 90 s  
0.40  
150  
2.60  
Preheat 130170°C  
100  
Min. 60 s  
Figure 22. PCB Pad Layout, High Isolation  
MiniPak (dimensions in mm).  
Max. 150 s  
50  
0
This pattern uses four via holes,  
connecting the crossed ground  
strip pattern to the ground plane  
of the board.  
0
30  
60  
90  
120  
150  
180 210  
240  
270  
300  
330 360  
TIME (seconds)  
Figure 23. Surface Mount Assembly Temperature Profile.  
8
MiniPak Outline Drawing for HMPP-3890, -3892, and -3895  
1.44 (0.058)  
1.40 (0.056)  
1.12 (0.045)  
1.08 (0.043)  
0.82 (0.033)  
0.78 (0.031)  
1.20 (0.048)  
1.16 (0.046)  
0.32 (0.013)  
0.28 (0.011)  
0.00  
Top view  
-0.07 (-0.003)  
-0.03 (-0.001)  
0.92 (0.037)  
0.88 (0.035)  
0.00  
-0.07 (-0.003) 0.42 (0.017)  
1.32 (0.053)  
1.28 (0.051)  
-0.03 (-0.001) 0.38 (0.015)  
0.70 (0.028)  
0.58 (0.023)  
Bottom view  
Side view  
MiniPak Outline Drawing for HMPP-389T  
1.12 (0.045)  
1.08 (0.043)  
0.82 (0.033)  
0.78 (0.031)  
0.32 (0.013)  
0.28 (0.011)  
0.00  
-0.07 (-0.003)  
-0.03 (-0.001)  
0.92 (0.037)  
0.88 (0.035)  
0.00  
-0.07 (-0.003) 0.42 (0.017)  
-0.03 (-0.001) 0.38 (0.015)  
1.32 (0.053)  
1.28 (0.051)  
Bottom view  
Dimensions are in millimeteres (inches)  
Ordering Information  
Part Number  
No. of Devices  
Container  
HMPP-389x-TR2  
HMPP-389x-TR1  
HMPP-389x-BLK  
10000  
3000  
100  
13” Reel  
7”Reel  
antistatic bag  
9
Device Orientation  
REEL  
TOP VIEW  
4 mm  
END VIEW  
CARRIER  
TAPE  
8 mm  
USER  
FEED  
DIRECTION  
COVER TAPE  
Note: AArepresents package marking code. Package marking is  
right side up with carrier tape perforations at top. Conforms to  
Electronic Industries RS-481, Taping of Surface Mounted  
Components for Automated Placement.Standard quantity is 3,000  
devices per reel.  
Tape Dimensions and Product Orientation  
For Outline 4T (MiniPak 1412)  
P
P
D
2
P
0
E
F
W
C
D
1
t
(CARRIER TAPE THICKNESS)  
T (COVER TAPE THICKNESS)  
t
1
K
5° MAX.  
5° MAX.  
0
A
B
0
0
DESCRIPTION  
SYMBOL  
SIZE (mm)  
SIZE (INCHES)  
CAVITY  
LENGTH  
WIDTH  
DEPTH  
PITCH  
A
B
K
P
D
1.40 ± 0.05  
1.63 ± 0.05  
0.80 ± 0.05  
4.00 ± 0.10  
0.80 ± 0.05  
0.055 ± 0.002  
0.064 ± 0.002  
0.031 ± 0.002  
0.157 ± 0.004  
0.031 ± 0.002  
0
0
0
BOTTOM HOLE DIAMETER  
1
0
PERFORATION  
DIAMETER  
PITCH  
POSITION  
D
P
E
1.50 ± 0.10  
4.00 ± 0.10  
1.75 ± 0.10  
0.060 ± 0.004  
0.157 ± 0.004  
0.069 ± 0.004  
CARRIER TAPE WIDTH  
THICKNESS  
W
8.00 + 0.30 - 0.10 0.315 + 0.012 - 0.004  
t
0.254 ± 0.02  
0.010 ± 0.001  
1
COVER TAPE  
WIDTH  
C
5.40 ± 0.10  
0.213 ± 0.004  
TAPE THICKNESS  
T
0.062 ± 0.001  
0.002 ± 0.00004  
t
DISTANCE  
CAVITY TO PERFORATION  
(WIDTH DIRECTION)  
F
3.50 ± 0.05  
0.138 ± 0.002  
CAVITY TO PERFORATION  
(LENGTH DIRECTION)  
P
2
2.00 ± 0.05  
0.079 ± 0.002  
10  
www.agilent.com/semiconductors  
For product information and a complete list of  
distributors, please go to our web site.  
For technical assistance call:  
Americas/Canada: +1 (800) 235-0312 or  
(408) 654-8675  
Europe: +49 (0) 6441 92460  
China: 10800 650 0017  
Hong Kong: (+65) 271 2451  
India, Australia, New Zealand: (+65) 271 2394  
Japan: (+81 3) 3335-8152(Domestic/International), or  
0120-61-1280(Domestic Only)  
Korea: (+65) 271 2194  
Malaysia, Singapore: (+65) 271 2054  
Taiwan: (+65) 271 2654  
Data subject to change.  
Copyright © 2002 Agilent Technologies, Inc.  
Obsoletes 5988-4071EN  
February 20, 2002  
5988-5733EN  

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