DEMO-HSMS285-0 [ETC]
2.45 GHz TAG circuit using the HSMS-2850 zero bias Schottky diode ; 使用HSMS- 2850零偏置肖特基二极管2.45 GHz的标签电路\n
| 型号： | DEMO-HSMS285-0 |
| 厂家： | 
ETC |
| 描述： | 2.45 GHz TAG circuit using the HSMS-2850 zero bias Schottky diode
|
| 文件： | 总12页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Surface Mount Zero Bias
Schottky Detector Diodes
Technical Data
HSMS-2850 Series
Features
SOT-23/SOT-143 Package Description
• Surface Mount SOT-23/
SOT-143 Packages
Agilent’s HSMS-285x family of
zero bias Schottky detector
Lead Code Identification
( top view)
diodes has been designed and
optimized for use in small signal
(Pin < -20 dBm) applications at
frequencies below 1.5 GHz. They
are ideal for RF/ID and RF Tag
applications where primary (DC
bias) power is not available.
• Miniature SOT-323 and
SOT-363 Packages
SINGLE
3
SERIES
3
• High Detection Sensitivity:
up to 50 mV/µW at 915 MHz
1
2
1
2
• Low Flicker Noise:
#0
#2
-162 dBV/Hz at 100 Hz
UNCONNECTED
PAIR
• Low FIT ( Failure in Time)
Rate*
Important Note: For detector
applications with input power
levels greater than –20 dBm, use
the HSMS-282x series at frequen-
cies below 4.0 GHz, and the
HSMS-286x series at frequencies
above 4.0 GHz. The HSMS-285x
series IS NOT RECOMMENDED
for these higher power level
applications.
3
4
• Tape and Reel Options
Available
1
2
#5
• Matched Diodes for
Consistent Performance
SOT-323 Package Lead
Code Identification
( top view)
• Better Thermal
Conductivity for Higher
Power Dissipation
SINGLE
3
SERIES
3
* For more information see the Surface
Mount Schottky Reliability Data Sheet.
Available in various package
configurations, these detector
diodes provide low cost solutions
to a wide variety of design prob-
lems. Agilent’s manufacturing
techniques assure that when two
diodes are mounted into a single
package, they are taken from
adjacent sites on the wafer,
assuring the highest possible
degree of match.
Pin Connections and
Package Marking
1
2
1
2
B
C
SOT-363 Package Lead
Code Identification
( top view)
1
2
3
6
5
4
UNCONNECTED
BRIDGE
QUAD
TRIO
5
6
4
6
5
4
Notes:
1. Package marking provides orienta-
1
2
3
1
2
3
tion and identification.
L
P
2. See “Electrical Specifications” for
appropriate package marking.
2
SOT-23/SOT-143 DC Electrical Specifications, TC = +25°C, Single Diode
Part
Number
HSMS-
Package
Marking
Code[1]
Maximum
Forward Voltage
VF ( mV)
Typical
Capacitance
CT ( pF)
Lead
Code
Configuration
2850
2852
2855
P0
P2
P5
0
2
5
Single
150
250
0.30
Series Pair [2,3]
Unconnected Pair [2,3]
Test
Conditions
IF = 0.1 mA IF = 1.0 mA VR = –0.5V to –1.0V
f = 1 MHz
Notes:
1. Package marking code is in white.
2. ∆VF for diodes in pairs is 15.0 mV maximum at 1.0 mA.
3. ∆CT for diodes in pairs is 0.05 pF maximum at –0.5V.
SOT-323/SOT-363 DC Electrical Specifications, TC = +25°C, Single Diode
Part
Number
HSMS-
Package
Marking
Code[1]
Maximum
Forward Voltage
VF ( mV)
Typical
Capacitance
CT ( pF)
Lead
Code
Configuration
Single[2]
Series Pair [2,3]
Unconnected Trio
Bridge Quad
285B
285C
285L
285P
P0
P2
PL
PP
B
C
L
P
150
250
0.30
Test
Conditions
IF = 0.1 mA IF = 1.0 mA VR = 0.5V to –1.0V
f = 1 MHz
Notes:
1. Package marking code is laser marked.
2. ∆VF for diodes in pairs is 15.0 mV maximum at 1.0 mA.
3. ∆CT for diodes in pairs is 0.05 pF maximum at –0.5V.
RF Electrical Specifications, TC = +25°C, Single Diode
Part Number Typical Tangential Sensitivity
Typical Voltage Sensitivity
γ ( mV/µW) @ f = 915 MHz Resistance RV ( KΩ)
Typical Video
HSMS-
TSS ( dBm) @ f = 915 MHz
2850
2852
2855
285B
285C
285L
285P
–57
40
8.0
Test
Conditions
Video Bandwidth = 2 MHz
Zero Bias
Power in = –40 dBm
RL = 100 KΩ, Zero Bias
Zero Bias
3
Absolute Maximum Ratings, TC = +25°C, Single Diode
Absolute Maximum[1]
ESD WARNING:
Symbol
Parameter
Unit
Handling Precautions
Should Be Taken To Avoid
Static Discharge.
SOT-23/143 SOT-323/363
PIV
TJ
Peak Inverse Voltage
Junction Temperature
Storage Temperature
V
°C
°C
2.0
150
2.0
150
TSTG
TOP
θjc
-65 to 150
-65 to 150
500
-65 to 150
-65 to 150
150
Operating Temperature °C
Thermal Resistance[2]
°C/W
Notes:
1. Operation in excess of any one of these conditions may result in
permanent damage to the device.
2. TC = +25°C, where TC is defined to be the temperature at the package
pins where contact is made to the circuit board.
Equivalent Linear Circuit Model
HSMS-285x chip
SPICE Parameters
Parameter Units
HSMS-285x
3.8
BV
CJ0
EG
IBV
IS
V
pF
eV
A
R
j
0.18
0.69
3 E -4
3 E-6
1.06
25
R
S
A
N
C
j
RS
Ω
RS = series resistance (see Table of SPICE parameters)
Cj = junction capacitance (see Table of SPICE parameters)
PB (V )
V
0.35
2
J
PT (XTI)
M
8.33 X 10-5 nT
Rj =
0.5
Ib + Is
where
Ib = externally applied bias current in amps
Is = saturation current (see table of SPICE parameters)
T = temperature, °K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-285x product,
please refer to Application Note AN1124.
4
Typical Parameters, Single Diode
10000
1000
100
100
30
10
R
= 100 KΩ
L
R
= 100 KΩ
L
10
915 MHz
915 MHz
1
10
1
0.1
0.01
1
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
0.1
-50
0.3
-50
-40
-30
-20
-10
0
-40
-30
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
– FORWARD VOLTAGE (V)
POWER IN (dBm)
POWER IN (dBm)
V
F
Figure 2. +25°C Output Voltage vs.
Input Power at Zero Bias.
Figure 3. +25°C Expanded Output
Voltage vs. Input Power. See Figure 2.
Figure 1. Typical Forward Current
vs. Forward Voltage.
3.1
FREQUENCY = 2.45 GHz
2.9
P
R
= -40 dBm
= 100 KΩ
IN
2.7
L
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
MEASUREMENTS MADE USING A
FR4 MICROSTRIP CIRCUIT.
0
10 20 30 40 50 60 70 80 90 100
TEMPERATURE (°C)
Figure 4. Output Voltage vs.
Temperature.
5
Applications Information
Introduction
tance of the diode, controlled by
the thickness of the epitaxial layer
and the diameter of the Schottky
contact. Rj is the junction
resistance of the diode, a function
of the total current flowing
through it.
current, IS, and is related to the
barrier height of the diode.
Agilent’s HSMS-285x family of
Schottky detector diodes has been
developed specifically for low
cost, high volume designs in small
signal (Pin < -20 dBm) applica-
tions at frequencies below
1.5 GHz. At higher frequencies,
the DC biased HSMS-286x family
should be considered.
Through the choice of p-type or
n-type silicon, and the selection of
metal, one can tailor the charac-
teristics of a Schottky diode.
Barrier height will be altered, and
at the same time CJ and RS will be
changed. In general, very low
barrier height diodes (with high
values of IS, suitable for zero bias
applications) are realized on
p-type silicon. Such diodes suffer
from higher values of RS than do
the n-type. Thus, p-type diodes are
generally reserved for small signal
detector applications (where very
high values of RV swamp out high
RS) and n-type diodes are used for
mixer applications (where high
L.O. drive levels keep RV low).
8.33 X 10-5 n T
Rj = –––––––––––– = RV – Rs
IS + Ib
0.026
= ––––– at 25°C
IS + Ib
In large signal power or gain con-
trol applications (Pin > -20 dBm),
the HSMS-282x and HSMS-286x
products should be used. The
HSMS-285x zero bias diode is not
designed for large signal designs.
where
n = ideality factor (see table of
SPICE parameters)
T = temperature in °K
IS = saturation current (see
table of SPICE parameters)
Ib = externally applied bias
current in amps
Schottky Barrier Diode
Characteristics
Stripped of its package, a
IS is a function of diode barrier
height, and can range from
picoamps for high barrier diodes
to as much as 5 µA for very low
barrier diodes.
Schottky barrier diode chip
consists of a metal-semiconductor
barrier formed by deposition of a
metal layer on a semiconductor.
The most common of several
different types, the passivated
diode, is shown in Figure 5, along
with its equivalent circuit.
Measuring Diode Parameters
The measurement of the five
elements which make up the low
frequency equivalent circuit for a
packaged Schottky diode (see
Figure 6) is a complex task.
Various techniques are used for
each element. The task begins
with the elements of the diode
chip itself.
The Height of the Schottky
Barrier
The current-voltage characteristic
of a Schottky barrier diode at
room temperature is described by
the following equation:
R
S
METAL
C
P
PASSIVATION
PASSIVATION
V - IRS
N-TYPE OR P-TYPE EPI LAYER
I = IS (exp
(
––––––
0.026
)
- 1)
R
j
SCHOTTKY JUNCTION
C
j
N-TYPE OR P-TYPE SILICON SUBSTRATE
L
R
P
V
On a semi-log plot (as shown in
the Agilent catalog) the current
graph will be a straight line with
inverse slope 2.3 X 0.026 = 0.060
volts per cycle (until the effect of
RS is seen in a curve that droops
at high current). All Schottky
diode curves have the same slope,
but not necessarily the same value
of current for a given voltage. This
is determined by the saturation
R
CROSS-SECTION OF SCHOTTKY
BARRIER DIODE CHIP
EQUIVALENT
Figure 5. Schottky Diode Chip.CIRCUIT
S
C
j
RS is the parasitic series
resistance of the diode, the sum of
the bondwire and leadframe
resistance, the resistance of the
bulk layer of silicon, etc. RF
energy coupled into RS is lost as
heat —it does not contribute to
the rectified output of the diode.
CJ is parasitic junction capaci-
FOR THE HSMS-285x SERIES
C
= 0.08 pF
= 2 nH
= 0.18 pF
= 25 Ω
P
L
P
C
R
R
j
S
V
= 9 KΩ
Figure 6. Equivalent Circuit of a
Schottky Diode.
6
RS is perhaps the easiest to
sets the loss, which plots out as a
straight line when frequency is
plotted on a log scale. Again,
calculation is straightforward.
measure accurately. The V-I curve
is measured for the diode under
forward bias, and the slope of the
curve is taken at some relatively
high value of current (such as
5 mA). This slope is converted
into a resistance Rd.
Z-MATCH
NETWORK
VIDEO
OUT
RF
IN
LP and CP are best measured on
the HP8753C, with the diode
terminating a 50 Ω line on the
input port. The resulting tabula-
tion of S11 can be put into a
microwave linear analysis
Z-MATCH
NETWORK
VIDEO
OUT
RF
IN
0.026
RS = Rd – ––––––
If
program having the five element
equivalent circuit with RV, CJ and
RS fixed. The optimizer can then
adjust the values of LP and CP
until the calculated S11 matches
the measured values. Note that
extreme care must be taken to
de-embed the parasitics of the
50 Ω test fixture.
RV and CJ are very difficult to
measure. Consider the impedance
of CJ = 0.16 pF when measured at
1 MHz — it is approximately
1 MΩ. For a well designed zero
bias Schottky, RV is in the range of
5 to 25 KΩ, and it shorts out the
junction capacitance. Moving up
to a higher frequency enables the
measurement of the capacitance,
but it then shorts out the video
resistance. The best measurement
technique is to mount the diode in
series in a 50 Ω microstrip test
circuit and measure its insertion
loss at low power levels (around
-20 dBm) using an HP8753C
Figure 8. Basic Detector Circuits.
The situation is somewhat more
complicated in the design of the
RF impedance matching network,
which includes the package
inductance and capacitance
(which can be tuned out), the
series resistance, the junction
capacitance and the video
resistance. Of these five elements
of the diode’s equivalent circuit,
the four parasitics are constants
and the video resistance is a
function of the current flowing
through the diode.
Detector Circuits
When DC bias is available,
Schottky diode detector circuits
can be used to create low cost RF
and microwave receivers with a
sensitivity of -55 dBm to
-57 dBm.[1] These circuits can take
a variety of forms, but in the most
simple case they appear as shown
in Figure 8. This is the basic
detector circuit used with the
HSMS-285x family of diodes.
network analyzer. The resulting
display will appear as shown in
Figure 7.
26,000
RV ≈ ––––––
IS + Ib
where
-10
IS = diode saturation current
in µA
Ib = bias current in µA
0.16 pF
50 Ω
-15
In the design of such detector
circuits, the starting point is the
equivalent circuit of the diode, as
shown in Figure 6.
50 Ω
-20
Saturation current is a function of
the diode’s design,[2] and it is a
constant at a given temperature.
For the HSMS-285x series, it is
typically 3 to 5 µA at 25°C.
-25
50 Ω 9 KΩ
-30
Of interest in the design of the
video portion of the circuit is the
diode’s video impedance —the
other four elements of the equiv-
alent circuit disappear at all
reasonable video frequencies. In
general, the lower the diode’s
video impedance, the better the
design.
50 Ω
-35
-40
Saturation current sets the detec-
tion sensitivity, video resistance
and input RF impedance of the
zero bias Schottky detector diode.
3
10
100
1000 3000
FREQUENCY (MHz)
Figure 7. Measuring CJ and RV.
At frequencies below 10 MHz, the
video resistance dominates the
loss and can easily be calculated
from it. At frequencies above
300 MHz, the junction capacitance
[1]
Agilent Application Note 923, Schottky Barrier Diode Video Detectors.
[2]
Agilent Application Note 969, An Optimum Zero Bias Schottky Detector Diode.
7
0
65nH
Since no external bias is used
with the HSMS-285x series, a
single transfer curve at any given
frequency is obtained, as shown in
Figure 2.
RF
INPUT
VIDEO
OUT
-5
-10
-15
-20
WIDTH = 0.050"
LENGTH = 0.065"
100 pF
WIDTH = 0.015"
LENGTH = 0.600"
The most difficult part of the
design of a detector circuit is the
input impedance matching
network. For very broadband
detectors, a shunt 60 Ω resistor
will give good input match, but at
the expense of detection
TRANSMISSION LINE
DIMENSIONS ARE FOR
MICROSTRIP ON
0.032" THICK FR-4.
Figure 10. 915 MHz Matching
Network for the HSMS-285x Series
at Zero Bias.
0.9
0.915
0.93
FREQUENCY (GHz)
A 65 nH inductor rotates the
impedance of the diode to a point
on the Smith Chart where a shunt
inductor can pull it up to the
center. The short length of 0.065"
wide microstrip line is used to
mount the lead of the diode’s
SOT-323 package. A shorted shunt
stub of length <λ/4 provides the
necessary shunt inductance and
simultaneously provides the
return circuit for the current gen-
erated in the diode. The imped-
ance of this circuit is given in
Figure 11.
Figure 12. Input Return Loss.
sensitivity.
As can be seen, the band over
When maximum sensitivity is
required over a narrow band of
frequencies, a reactive matching
network is optimum. Such net-
works can be realized in either
lumped or distributed elements,
depending upon frequency, size
constraints and cost limitations,
but certain general design
principals exist for all types.[3]
Design work begins with the RF
impedance of the HSMS-285x
series, which is given in Figure 9.
which a good match is achieved is
more than adequate for 915 MHz
RFID applications.
Voltage Doublers
To this point, we have restricted
our discussion to single diode
detectors. A glance at Figure 8,
however, will lead to the sugges-
tion that the two types of single
diode detectors be combined into
a two diode voltage doubler[4]
(known also as a full wave recti-
fier). Such a detector is shown in
Figure 13.
Z-MATCH
NETWORK
5
2
VIDEO OUT
RF IN
0.2
0.6
1
1 GHz
2
3
Figure 13. Voltage Doubler Circuit.
4
Such a circuit offers several
advantages. First the voltage
FREQUENCY (GHz): 0.9-0.93
5
6
Figure 9. RF Impedance of the
HSMS-285x Series at -40 dBm.
Figure 11. Input Impedance.
outputs of two diodes are added
in series, increasing the overall
value of voltage sensitivity for the
network (compared to a single
diode detector). Second, the RF
impedances of the two diodes are
added in parallel, making the job
of reactive matching a bit easier.
The input match, expressed in
terms of return loss, is given in
Figure 12.
915 MHz Detector Circuit
Figure 10 illustrates a simple
impedance matching network for
a 915 MHz detector.
[3]
Agilent Application Note 963, Impedance Matching Techniques for Mixers and Detectors.
Agilent Application Note 956-4, Schottky Diode Voltage Doubler.
[4]
[5]
Agilent Application Note 965-3, Flicker Noise in Schottky Diodes.
8
Such a circuit can easily be
realized using the two series di-
odes in the HSMS-285C.
For an ideal resistor R, at 300°K,
the noise voltage can be com-
puted from
between the antenna and the
Schottky diode, shorting out the
RF circuit temporarily and
reflecting the excessive RF energy
back out the antenna.
v = 1.287 X 10-10 √R volts/Hz
Flicker Noise
Reference to Figure 5 will show
that there is a junction of metal,
silicon, and passivation around
the rim of the Schottky contact. It
is in this three-way junction that
flicker noise[5] is generated. This
noise can severely reduce the
sensitivity of a crystal video
receiver utilizing a Schottky
detector circuit if the video
frequency is below the noise
corner. Flicker noise can be
substantially reduced by the
elimination of passivation, but
such diodes cannot be mounted in
non-hermetic packages. p-type
silicon Schottky diodes have the
least flicker noise at a given value
of external bias (compared to
n-type silicon or GaAs). At zero
bias, such diodes can have
which can be expressed as
Assembly Instructions
SOT-323 PCB Footprint
A recommended PCB pad layout
for the miniature SOT-323 (SC-70)
package is shown in Figure 15
(dimensions are in inches). This
layout provides ample allowance
for package placement by auto-
mated assembly equipment
without adding parasitics that
could impair the performance.
Figure 16 shows the pad layout
for the six-lead SOT-363.
20 log10
v
dBV/Hz
Thus, for a diode with RV = 9 KΩ,
the noise voltage is 12.2 nV/Hz or
-158 dBV/Hz. On the graph of
Figure 14, -158 dBV/Hz would
replace the zero on the vertical
scale to convert the chart to one
of absolute noise voltage vs.
frequency.
Diode Burnout
0.026
Any Schottky junction, be it an RF
diode or the gate of a MESFET, is
relatively delicate and can be
burned out with excessive RF
power. Many crystal video receiv-
ers used in RFID (tag) applica-
tions find themselves in poorly
controlled environments where
high power sources may be
0.07
0.035
extremely low values of flicker
noise. For the HSMS-285x series,
the noise temperature ratio is
given in Figure 14.
0.016
present. Examples are the areas
around airport and FAA radars,
nearby ham radio operators, the
vicinity of a broadcast band trans-
mitter, etc. In such environments,
the Schottky diodes of the
receiver can be protected by a de-
vice known as a limiter diode.[6]
Formerly available only in radar
warning receivers and other high
cost electronic warfare applica-
tions, these diodes have been
adapted to commercial and
Figure 15. PCB Pad Layout
( dimensions in inches) .
15
0.026
10
5
0.075
0
0.035
-5
10
100
1000
10000
100000
0.016
FREQUENCY (Hz)
consumer circuits.
Figure 14. Typical Noise Temperature
Ratio.
Figure 16. PCB Pad Layout
( dimensions in inches) .
Agilent offers a complete line of
surface mountable PIN limiter
diodes. Most notably, our
HSMP-4820 (SOT-23) can act as a
very fast (nanosecond) power-
sensitive switch when placed
Noise temperature ratio is the
quotient of the diode’s noise
power (expressed in dBV/Hz) di-
vided by the noise power of an
ideal resistor of resistance R = RV.
[6]
Agilent Application Note 1050, Low Cost, Surface Mount Power Limiters.
9
After ramping up from room
temperature, the circuit board
with components attached to it
(held in place with solder paste)
passes through one or more
preheat zones. The preheat zones
increase the temperature of the
board and components to prevent
thermal shock and begin evapo-
rating solvents from the solder
paste. The reflow zone briefly
elevates the temperature suffi-
ciently to produce a reflow of the
solder.
These parameters are typical for a
surface mount assembly process
for Agilent diodes. As a general
guideline, the circuit board and
components should be exposed
only to the minimum temperatures
and times necessary to achieve a
uniform reflow of solder.
SMT Assembly
Reliable assembly of surface
mount components is a complex
process that involves many
material, process, and equipment
factors, including: method of
heating (e.g., IR or vapor phase
reflow, wave soldering, etc.)
circuit board material, conductor
thickness and pattern, type of
solder alloy, and the thermal
conductivity and thermal mass of
components. Components with a
low mass, such as the SOT
packages, will reach solder
reflow temperatures faster than
those with a greater mass.
The rates of change of tempera-
ture for the ramp-up and cool-
down zones are chosen to be low
enough to not cause deformation
of the board or damage to compo-
nents due to thermal shock. The
maximum temperature in the
Agilent’s diodes have been
qualified to the time-temperature
profile shown in Figure 17. This
profile is representative of an IR
reflow type of surface mount
assembly process.
reflow zone (T ) should not
MAX
exceed 235°C.
250
200
TMAX
150
Reflow
Zone
100
Preheat
Zone
Cool Down
Zone
50
0
0
60
120
180
240
300
TIME (seconds)
Figure 17. Surface Mount Assembly Profile.
10
Package Dimensions
Outline 23 ( SOT-23)
1.02 (0.040)
0.89 (0.035)
1.03 (0.041)
0.54 (0.021)
0.37 (0.015)
DATE CODE (X)
*
0.89 (0.035)
PACKAGE
MARKING
CODE (XX)
3
1.40 (0.055)
1.20 (0.047)
2.65 (0.104)
2.10 (0.083)
X X X
2
1
0.60 (0.024)
0.45 (0.018)
2.04 (0.080)
1.78 (0.070)
2.05 (0.080)
1.78 (0.070)
*
TOP VIEW
0.180 (0.007)
0.085 (0.003)
*
0.152 (0.006)
0.086 (0.003)
3.06 (0.120)
2.80 (0.110)
1.04 (0.041)
0.85 (0.033)
0.69 (0.027)
0.45 (0.018)
0.10 (0.004)
0.013 (0.0005)
SIDE VIEW
END VIEW
THESE DIMENSIONS FOR HSMS-280X AND -281X FAMILIES ONLY.
DIMENSIONS ARE IN MILLIMETERS (INCHES)
*
Outline 143 ( SOT-143)
0.92 (0.036)
0.78 (0.031)
DATE CODE (X)
E
B
C
PACKAGE
MARKING
CODE (XX)
1.40 (0.055)
1.20 (0.047)
2.65 (0.104)
2.10 (0.083)
X X X
E
0.60 (0.024)
0.45 (0.018)
0.54 (0.021)
0.37 (0.015)
2.04 (0.080)
1.78 (0.070)
3.06 (0.120)
2.80 (0.110)
0.15 (0.006)
0.09 (0.003)
1.04 (0.041)
0.85 (0.033)
0.69 (0.027)
0.45 (0.018)
0.10 (0.004)
0.013 (0.0005)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
11
Outline SOT-323
( SC-70, 3 Lead)
PACKAGE
1.30 (0.051)
MARKING
DATE CODE (X)
REF.
CODE (XX)
2.20 (0.087)
X X X
1.35 (0.053)
1.15 (0.045)
2.00 (0.079)
0.650 BSC (0.025)
0.425 (0.017)
TYP.
2.20 (0.087)
1.80 (0.071)
0.10 (0.004)
0.00 (0.00)
0.30 REF.
0.20 (0.008)
0.10 (0.004)
1.00 (0.039)
0.80 (0.031)
0.25 (0.010)
0.15 (0.006)
10°
0.30 (0.012)
0.10 (0.004)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
Outline SOT-363
( SC-70, 6 Lead)
PACKAGE
1.30 (0.051)
MARKING
DATE CODE (X)
REF.
CODE (XX)
2.20 (0.087)
X X X
1.35 (0.053)
1.15 (0.045)
2.00 (0.079)
0.650 BSC (0.025)
0.425 (0.017)
TYP.
2.20 (0.087)
1.80 (0.071)
0.10 (0.004)
0.00 (0.00)
0.30 REF.
1.00 (0.039)
0.80 (0.031)
0.20 (0.008)
0.10 (0.004)
10°
0.30 (0.012)
0.10 (0.004)
0.25 (0.010)
0.15 (0.006)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
Part Number Ordering Information
No. of
Part Number
HSMS-285x-TR2*
HSMS-285x-TR1*
HSMS-285x-BLK *
Devices
10000
3000
Container
13" Reel
7" Reel
100
antistatic bag
where x = 0, 2, 5, B, C, L and P for HSMS-285x.
Device Orientation
REEL
TOP VIEW
4 mm
END VIEW
8 mm
CARRIER
TAPE
###
###
###
###
USER
FEED
DIRECTION
Note: “###” represents Package Marking Code, Date Code.
COVER TAPE
Tape Dimensions and Product Orientation
For Outline SOT-323 ( SC-70 3 Lead)
P
P
D
2
P
0
E
F
W
C
D
1
t
(CARRIER TAPE THICKNESS)
T (COVER TAPE THICKNESS)
t
1
K
8° MAX.
5° MAX.
0
A
B
0
0
DESCRIPTION
SYMBOL
SIZE (mm)
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
A
B
K
P
D
2.24 ± 0.10
2.34 ± 0.10
1.22 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.088 ± 0.004
0.092 ± 0.004
0.048 ± 0.004
0.157 ± 0.004
0.039 + 0.010
0
0
0
BOTTOM HOLE DIAMETER
1
0
PERFORATION
DIAMETER
PITCH
POSITION
D
P
E
1.55 ± 0.05
4.00 ± 0.10
1.75 ± 0.10
0.061 ± 0.002
0.157 ± 0.004
0.069 ± 0.004
CARRIER TAPE WIDTH
THICKNESS
W
8.00 ± 0.30
0.315 ± 0.012
t
0.255 ± 0.013 0.010 ± 0.0005
5.4 ± 0.10 0.205 ± 0.004
0.062 ± 0.001 0.0025 ± 0.00004
1
COVER TAPE
WIDTH
C
www.semiconductor.agilent.com
TAPE THICKNESS
T
t
Data subject to change.
Copyright © 1999 Agilent Technologies
Obsoletes 5968-5437E, 5968-5908E,
5968-2355E
DISTANCE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 ± 0.05
0.138 ± 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P
2
2.00 ± 0.05
0.079 ± 0.002
5968-7457E (11/99)
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