DEMO-HSMS285-0 [ETC]

2.45 GHz TAG circuit using the HSMS-2850 zero bias Schottky diode ; 使用HSMS- 2850零偏置肖特基二极管2.45 GHz的标签电路\n
DEMO-HSMS285-0
型号: DEMO-HSMS285-0
厂家: ETC    ETC
描述:

2.45 GHz TAG circuit using the HSMS-2850 zero bias Schottky diode
使用HSMS- 2850零偏置肖特基二极管2.45 GHz的标签电路\n

肖特基二极管
文件: 总12页 (文件大小:102K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Surface Mount Zero Bias  
Schottky Detector Diodes  
Technical Data  
HSMS-2850 Series  
Features  
SOT-23/SOT-143 Package Description  
• Surface Mount SOT-23/  
SOT-143 Packages  
Agilents HSMS-285x family of  
zero bias Schottky detector  
Lead Code Identification  
( top view)  
diodes has been designed and  
optimized for use in small signal  
(Pin < -20 dBm) applications at  
frequencies below 1.5 GHz. They  
are ideal for RF/ID and RF Tag  
applications where primary (DC  
bias) power is not available.  
• Miniature SOT-323 and  
SOT-363 Packages  
SINGLE  
3
SERIES  
3
• High Detection Sensitivity:  
up to 50 mV/µW at 915 MHz  
1
2
1
2
• Low Flicker Noise:  
#0  
#2  
-162 dBV/Hz at 100 Hz  
UNCONNECTED  
PAIR  
• Low FIT ( Failure in Time)  
Rate*  
Important Note: For detector  
applications with input power  
levels greater than –20 dBm, use  
the HSMS-282x series at frequen-  
cies below 4.0 GHz, and the  
HSMS-286x series at frequencies  
above 4.0 GHz. The HSMS-285x  
series IS NOT RECOMMENDED  
for these higher power level  
applications.  
3
4
• Tape and Reel Options  
Available  
1
2
#5  
• Matched Diodes for  
Consistent Performance  
SOT-323 Package Lead  
Code Identification  
( top view)  
• Better Thermal  
Conductivity for Higher  
Power Dissipation  
SINGLE  
3
SERIES  
3
* For more information see the Surface  
Mount Schottky Reliability Data Sheet.  
Available in various package  
configurations, these detector  
diodes provide low cost solutions  
to a wide variety of design prob-  
lems. Agilents manufacturing  
techniques assure that when two  
diodes are mounted into a single  
package, they are taken from  
adjacent sites on the wafer,  
assuring the highest possible  
degree of match.  
Pin Connections and  
Package Marking  
1
2
1
2
B
C
SOT-363 Package Lead  
Code Identification  
( top view)  
1
2
3
6
5
4
UNCONNECTED  
BRIDGE  
QUAD  
TRIO  
5
6
4
6
5
4
Notes:  
1. Package marking provides orienta-  
1
2
3
1
2
3
tion and identification.  
L
P
2. See “Electrical Specifications” for  
appropriate package marking.  
2
SOT-23/SOT-143 DC Electrical Specifications, TC = +25°C, Single Diode  
Part  
Number  
HSMS-  
Package  
Marking  
Code[1]  
Maximum  
Forward Voltage  
VF ( mV)  
Typical  
Capacitance  
CT ( pF)  
Lead  
Code  
Configuration  
2850  
2852  
2855  
P0  
P2  
P5  
0
2
5
Single  
150  
250  
0.30  
Series Pair [2,3]  
Unconnected Pair [2,3]  
Test  
Conditions  
IF = 0.1 mA IF = 1.0 mA VR = –0.5V to –1.0V  
f = 1 MHz  
Notes:  
1. Package marking code is in white.  
2. VF for diodes in pairs is 15.0 mV maximum at 1.0 mA.  
3. CT for diodes in pairs is 0.05 pF maximum at –0.5V.  
SOT-323/SOT-363 DC Electrical Specifications, TC = +25°C, Single Diode  
Part  
Number  
HSMS-  
Package  
Marking  
Code[1]  
Maximum  
Forward Voltage  
VF ( mV)  
Typical  
Capacitance  
CT ( pF)  
Lead  
Code  
Configuration  
Single[2]  
Series Pair [2,3]  
Unconnected Trio  
Bridge Quad  
285B  
285C  
285L  
285P  
P0  
P2  
PL  
PP  
B
C
L
P
150  
250  
0.30  
Test  
Conditions  
IF = 0.1 mA IF = 1.0 mA VR = 0.5V to –1.0V  
f = 1 MHz  
Notes:  
1. Package marking code is laser marked.  
2. VF for diodes in pairs is 15.0 mV maximum at 1.0 mA.  
3. CT for diodes in pairs is 0.05 pF maximum at –0.5V.  
RF Electrical Specifications, TC = +25°C, Single Diode  
Part Number Typical Tangential Sensitivity  
Typical Voltage Sensitivity  
γ ( mV/µW) @ f = 915 MHz Resistance RV ( K)  
Typical Video  
HSMS-  
TSS ( dBm) @ f = 915 MHz  
2850  
2852  
2855  
285B  
285C  
285L  
285P  
57  
40  
8.0  
Test  
Conditions  
Video Bandwidth = 2 MHz  
Zero Bias  
Power in = –40 dBm  
RL = 100 K, Zero Bias  
Zero Bias  
3
Absolute Maximum Ratings, TC = +25°C, Single Diode  
Absolute Maximum[1]  
ESD WARNING:  
Symbol  
Parameter  
Unit  
Handling Precautions  
Should Be Taken To Avoid  
Static Discharge.  
SOT-23/143 SOT-323/363  
PIV  
TJ  
Peak Inverse Voltage  
Junction Temperature  
Storage Temperature  
V
°C  
°C  
2.0  
150  
2.0  
150  
TSTG  
TOP  
θjc  
-65 to 150  
-65 to 150  
500  
-65 to 150  
-65 to 150  
150  
Operating Temperature °C  
Thermal Resistance[2]  
°C/W  
Notes:  
1. Operation in excess of any one of these conditions may result in  
permanent damage to the device.  
2. TC = +25°C, where TC is defined to be the temperature at the package  
pins where contact is made to the circuit board.  
Equivalent Linear Circuit Model  
HSMS-285x chip  
SPICE Parameters  
Parameter Units  
HSMS-285x  
3.8  
BV  
CJ0  
EG  
IBV  
IS  
V
pF  
eV  
A
R
j
0.18  
0.69  
3 E -4  
3 E-6  
1.06  
25  
R
S
A
N
C
j
RS  
RS = series resistance (see Table of SPICE parameters)  
Cj = junction capacitance (see Table of SPICE parameters)  
PB (V )  
V
0.35  
2
J
PT (XTI)  
M
8.33 X 10-5 nT  
Rj =  
0.5  
Ib + Is  
where  
Ib = externally applied bias current in amps  
Is = saturation current (see table of SPICE parameters)  
T = temperature, °K  
n = ideality factor (see table of SPICE parameters)  
Note:  
To effectively model the packaged HSMS-285x product,  
please refer to Application Note AN1124.  
4
Typical Parameters, Single Diode  
10000  
1000  
100  
100  
30  
10  
R
= 100 K  
L
R
= 100 KΩ  
L
10  
915 MHz  
915 MHz  
1
10  
1
0.1  
0.01  
1
DIODES TESTED IN FIXED-TUNED  
FR4 MICROSTRIP CIRCUITS.  
DIODES TESTED IN FIXED-TUNED  
FR4 MICROSTRIP CIRCUITS.  
0.1  
-50  
0.3  
-50  
-40  
-30  
-20  
-10  
0
-40  
-30  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8  
– FORWARD VOLTAGE (V)  
POWER IN (dBm)  
POWER IN (dBm)  
V
F
Figure 2. +25°C Output Voltage vs.  
Input Power at Zero Bias.  
Figure 3. +25°C Expanded Output  
Voltage vs. Input Power. See Figure 2.  
Figure 1. Typical Forward Current  
vs. Forward Voltage.  
3.1  
FREQUENCY = 2.45 GHz  
2.9  
P
R
= -40 dBm  
= 100 KΩ  
IN  
2.7  
L
2.5  
2.3  
2.1  
1.9  
1.7  
1.5  
1.3  
1.1  
0.9  
MEASUREMENTS MADE USING A  
FR4 MICROSTRIP CIRCUIT.  
0
10 20 30 40 50 60 70 80 90 100  
TEMPERATURE (°C)  
Figure 4. Output Voltage vs.  
Temperature.  
5
Applications Information  
Introduction  
tance of the diode, controlled by  
the thickness of the epitaxial layer  
and the diameter of the Schottky  
contact. Rj is the junction  
resistance of the diode, a function  
of the total current flowing  
through it.  
current, IS, and is related to the  
barrier height of the diode.  
Agilents HSMS-285x family of  
Schottky detector diodes has been  
developed specifically for low  
cost, high volume designs in small  
signal (Pin < -20 dBm) applica-  
tions at frequencies below  
1.5 GHz. At higher frequencies,  
the DC biased HSMS-286x family  
should be considered.  
Through the choice of p-type or  
n-type silicon, and the selection of  
metal, one can tailor the charac-  
teristics of a Schottky diode.  
Barrier height will be altered, and  
at the same time CJ and RS will be  
changed. In general, very low  
barrier height diodes (with high  
values of IS, suitable for zero bias  
applications) are realized on  
p-type silicon. Such diodes suffer  
from higher values of RS than do  
the n-type. Thus, p-type diodes are  
generally reserved for small signal  
detector applications (where very  
high values of RV swamp out high  
RS) and n-type diodes are used for  
mixer applications (where high  
L.O. drive levels keep RV low).  
8.33 X 10-5 n T  
Rj = –––––––––––– = RV Rs  
IS + Ib  
0.026  
= ––––– at 25°C  
IS + Ib  
In large signal power or gain con-  
trol applications (Pin > -20 dBm),  
the HSMS-282x and HSMS-286x  
products should be used. The  
HSMS-285x zero bias diode is not  
designed for large signal designs.  
where  
n = ideality factor (see table of  
SPICE parameters)  
T = temperature in °K  
IS = saturation current (see  
table of SPICE parameters)  
Ib = externally applied bias  
current in amps  
Schottky Barrier Diode  
Characteristics  
Stripped of its package, a  
IS is a function of diode barrier  
height, and can range from  
picoamps for high barrier diodes  
to as much as 5 µA for very low  
barrier diodes.  
Schottky barrier diode chip  
consists of a metal-semiconductor  
barrier formed by deposition of a  
metal layer on a semiconductor.  
The most common of several  
different types, the passivated  
diode, is shown in Figure 5, along  
with its equivalent circuit.  
Measuring Diode Parameters  
The measurement of the five  
elements which make up the low  
frequency equivalent circuit for a  
packaged Schottky diode (see  
Figure 6) is a complex task.  
Various techniques are used for  
each element. The task begins  
with the elements of the diode  
chip itself.  
The Height of the Schottky  
Barrier  
The current-voltage characteristic  
of a Schottky barrier diode at  
room temperature is described by  
the following equation:  
R
S
METAL  
C
P
PASSIVATION  
PASSIVATION  
V - IRS  
N-TYPE OR P-TYPE EPI LAYER  
I = IS (exp  
(
––––––  
0.026  
)
- 1)  
R
j
SCHOTTKY JUNCTION  
C
j
N-TYPE OR P-TYPE SILICON SUBSTRATE  
L
R
P
V
On a semi-log plot (as shown in  
the Agilent catalog) the current  
graph will be a straight line with  
inverse slope 2.3 X 0.026 = 0.060  
volts per cycle (until the effect of  
RS is seen in a curve that droops  
at high current). All Schottky  
diode curves have the same slope,  
but not necessarily the same value  
of current for a given voltage. This  
is determined by the saturation  
R
CROSS-SECTION OF SCHOTTKY  
BARRIER DIODE CHIP  
EQUIVALENT  
Figure 5. Schottky Diode Chip.CIRCUIT  
S
C
j
RS is the parasitic series  
resistance of the diode, the sum of  
the bondwire and leadframe  
resistance, the resistance of the  
bulk layer of silicon, etc. RF  
energy coupled into RS is lost as  
heat —it does not contribute to  
the rectified output of the diode.  
CJ is parasitic junction capaci-  
FOR THE HSMS-285x SERIES  
C
= 0.08 pF  
= 2 nH  
= 0.18 pF  
= 25  
P
L
P
C
R
R
j
S
V
= 9 KΩ  
Figure 6. Equivalent Circuit of a  
Schottky Diode.  
6
RS is perhaps the easiest to  
sets the loss, which plots out as a  
straight line when frequency is  
plotted on a log scale. Again,  
calculation is straightforward.  
measure accurately. The V-I curve  
is measured for the diode under  
forward bias, and the slope of the  
curve is taken at some relatively  
high value of current (such as  
5 mA). This slope is converted  
into a resistance Rd.  
Z-MATCH  
NETWORK  
VIDEO  
OUT  
RF  
IN  
LP and CP are best measured on  
the HP8753C, with the diode  
terminating a 50 line on the  
input port. The resulting tabula-  
tion of S11 can be put into a  
microwave linear analysis  
Z-MATCH  
NETWORK  
VIDEO  
OUT  
RF  
IN  
0.026  
RS = Rd – ––––––  
If  
program having the five element  
equivalent circuit with RV, CJ and  
RS fixed. The optimizer can then  
adjust the values of LP and CP  
until the calculated S11 matches  
the measured values. Note that  
extreme care must be taken to  
de-embed the parasitics of the  
50 test fixture.  
RV and CJ are very difficult to  
measure. Consider the impedance  
of CJ = 0.16 pF when measured at  
1 MHz — it is approximately  
1 M. For a well designed zero  
bias Schottky, RV is in the range of  
5 to 25 K, and it shorts out the  
junction capacitance. Moving up  
to a higher frequency enables the  
measurement of the capacitance,  
but it then shorts out the video  
resistance. The best measurement  
technique is to mount the diode in  
series in a 50 microstrip test  
circuit and measure its insertion  
loss at low power levels (around  
-20 dBm) using an HP8753C  
Figure 8. Basic Detector Circuits.  
The situation is somewhat more  
complicated in the design of the  
RF impedance matching network,  
which includes the package  
inductance and capacitance  
(which can be tuned out), the  
series resistance, the junction  
capacitance and the video  
resistance. Of these five elements  
of the diodes equivalent circuit,  
the four parasitics are constants  
and the video resistance is a  
function of the current flowing  
through the diode.  
Detector Circuits  
When DC bias is available,  
Schottky diode detector circuits  
can be used to create low cost RF  
and microwave receivers with a  
sensitivity of -55 dBm to  
-57 dBm.[1] These circuits can take  
a variety of forms, but in the most  
simple case they appear as shown  
in Figure 8. This is the basic  
detector circuit used with the  
HSMS-285x family of diodes.  
network analyzer. The resulting  
display will appear as shown in  
Figure 7.  
26,000  
RV ––––––  
IS + Ib  
where  
-10  
IS = diode saturation current  
in µA  
Ib = bias current in µA  
0.16 pF  
50 Ω  
-15  
In the design of such detector  
circuits, the starting point is the  
equivalent circuit of the diode, as  
shown in Figure 6.  
50 Ω  
-20  
Saturation current is a function of  
the diodes design,[2] and it is a  
constant at a given temperature.  
For the HSMS-285x series, it is  
typically 3 to 5 µA at 25°C.  
-25  
50 9 KΩ  
-30  
Of interest in the design of the  
video portion of the circuit is the  
diodes video impedance —the  
other four elements of the equiv-  
alent circuit disappear at all  
reasonable video frequencies. In  
general, the lower the diodes  
video impedance, the better the  
design.  
50 Ω  
-35  
-40  
Saturation current sets the detec-  
tion sensitivity, video resistance  
and input RF impedance of the  
zero bias Schottky detector diode.  
3
10  
100  
1000 3000  
FREQUENCY (MHz)  
Figure 7. Measuring CJ and RV.  
At frequencies below 10 MHz, the  
video resistance dominates the  
loss and can easily be calculated  
from it. At frequencies above  
300 MHz, the junction capacitance  
[1]  
Agilent Application Note 923, Schottky Barrier Diode Video Detectors.  
[2]  
Agilent Application Note 969, An Optimum Zero Bias Schottky Detector Diode.  
7
0
65nH  
Since no external bias is used  
with the HSMS-285x series, a  
single transfer curve at any given  
frequency is obtained, as shown in  
Figure 2.  
RF  
INPUT  
VIDEO  
OUT  
-5  
-10  
-15  
-20  
WIDTH = 0.050"  
LENGTH = 0.065"  
100 pF  
WIDTH = 0.015"  
LENGTH = 0.600"  
The most difficult part of the  
design of a detector circuit is the  
input impedance matching  
network. For very broadband  
detectors, a shunt 60 resistor  
will give good input match, but at  
the expense of detection  
TRANSMISSION LINE  
DIMENSIONS ARE FOR  
MICROSTRIP ON  
0.032" THICK FR-4.  
Figure 10. 915 MHz Matching  
Network for the HSMS-285x Series  
at Zero Bias.  
0.9  
0.915  
0.93  
FREQUENCY (GHz)  
A 65 nH inductor rotates the  
impedance of the diode to a point  
on the Smith Chart where a shunt  
inductor can pull it up to the  
center. The short length of 0.065"  
wide microstrip line is used to  
mount the lead of the diodes  
SOT-323 package. A shorted shunt  
stub of length <λ/4 provides the  
necessary shunt inductance and  
simultaneously provides the  
return circuit for the current gen-  
erated in the diode. The imped-  
ance of this circuit is given in  
Figure 11.  
Figure 12. Input Return Loss.  
sensitivity.  
As can be seen, the band over  
When maximum sensitivity is  
required over a narrow band of  
frequencies, a reactive matching  
network is optimum. Such net-  
works can be realized in either  
lumped or distributed elements,  
depending upon frequency, size  
constraints and cost limitations,  
but certain general design  
principals exist for all types.[3]  
Design work begins with the RF  
impedance of the HSMS-285x  
series, which is given in Figure 9.  
which a good match is achieved is  
more than adequate for 915 MHz  
RFID applications.  
Voltage Doublers  
To this point, we have restricted  
our discussion to single diode  
detectors. A glance at Figure 8,  
however, will lead to the sugges-  
tion that the two types of single  
diode detectors be combined into  
a two diode voltage doubler[4]  
(known also as a full wave recti-  
fier). Such a detector is shown in  
Figure 13.  
Z-MATCH  
NETWORK  
5
2
VIDEO OUT  
RF IN  
0.2  
0.6  
1
1 GHz  
2
3
Figure 13. Voltage Doubler Circuit.  
4
Such a circuit offers several  
advantages. First the voltage  
FREQUENCY (GHz): 0.9-0.93  
5
6
Figure 9. RF Impedance of the  
HSMS-285x Series at -40 dBm.  
Figure 11. Input Impedance.  
outputs of two diodes are added  
in series, increasing the overall  
value of voltage sensitivity for the  
network (compared to a single  
diode detector). Second, the RF  
impedances of the two diodes are  
added in parallel, making the job  
of reactive matching a bit easier.  
The input match, expressed in  
terms of return loss, is given in  
Figure 12.  
915 MHz Detector Circuit  
Figure 10 illustrates a simple  
impedance matching network for  
a 915 MHz detector.  
[3]  
Agilent Application Note 963, Impedance Matching Techniques for Mixers and Detectors.  
Agilent Application Note 956-4, Schottky Diode Voltage Doubler.  
[4]  
[5]  
Agilent Application Note 965-3, Flicker Noise in Schottky Diodes.  
8
Such a circuit can easily be  
realized using the two series di-  
odes in the HSMS-285C.  
For an ideal resistor R, at 300°K,  
the noise voltage can be com-  
puted from  
between the antenna and the  
Schottky diode, shorting out the  
RF circuit temporarily and  
reflecting the excessive RF energy  
back out the antenna.  
v = 1.287 X 10-10 R volts/Hz  
Flicker Noise  
Reference to Figure 5 will show  
that there is a junction of metal,  
silicon, and passivation around  
the rim of the Schottky contact. It  
is in this three-way junction that  
flicker noise[5] is generated. This  
noise can severely reduce the  
sensitivity of a crystal video  
receiver utilizing a Schottky  
detector circuit if the video  
frequency is below the noise  
corner. Flicker noise can be  
substantially reduced by the  
elimination of passivation, but  
such diodes cannot be mounted in  
non-hermetic packages. p-type  
silicon Schottky diodes have the  
least flicker noise at a given value  
of external bias (compared to  
n-type silicon or GaAs). At zero  
bias, such diodes can have  
which can be expressed as  
Assembly Instructions  
SOT-323 PCB Footprint  
A recommended PCB pad layout  
for the miniature SOT-323 (SC-70)  
package is shown in Figure 15  
(dimensions are in inches). This  
layout provides ample allowance  
for package placement by auto-  
mated assembly equipment  
without adding parasitics that  
could impair the performance.  
Figure 16 shows the pad layout  
for the six-lead SOT-363.  
20 log10  
v
dBV/Hz  
Thus, for a diode with RV = 9 K,  
the noise voltage is 12.2 nV/Hz or  
-158 dBV/Hz. On the graph of  
Figure 14, -158 dBV/Hz would  
replace the zero on the vertical  
scale to convert the chart to one  
of absolute noise voltage vs.  
frequency.  
Diode Burnout  
0.026  
Any Schottky junction, be it an RF  
diode or the gate of a MESFET, is  
relatively delicate and can be  
burned out with excessive RF  
power. Many crystal video receiv-  
ers used in RFID (tag) applica-  
tions find themselves in poorly  
controlled environments where  
high power sources may be  
0.07  
0.035  
extremely low values of flicker  
noise. For the HSMS-285x series,  
the noise temperature ratio is  
given in Figure 14.  
0.016  
present. Examples are the areas  
around airport and FAA radars,  
nearby ham radio operators, the  
vicinity of a broadcast band trans-  
mitter, etc. In such environments,  
the Schottky diodes of the  
receiver can be protected by a de-  
vice known as a limiter diode.[6]  
Formerly available only in radar  
warning receivers and other high  
cost electronic warfare applica-  
tions, these diodes have been  
adapted to commercial and  
Figure 15. PCB Pad Layout  
( dimensions in inches) .  
15  
0.026  
10  
5
0.075  
0
0.035  
-5  
10  
100  
1000  
10000  
100000  
0.016  
FREQUENCY (Hz)  
consumer circuits.  
Figure 14. Typical Noise Temperature  
Ratio.  
Figure 16. PCB Pad Layout  
( dimensions in inches) .  
Agilent offers a complete line of  
surface mountable PIN limiter  
diodes. Most notably, our  
HSMP-4820 (SOT-23) can act as a  
very fast (nanosecond) power-  
sensitive switch when placed  
Noise temperature ratio is the  
quotient of the diodes noise  
power (expressed in dBV/Hz) di-  
vided by the noise power of an  
ideal resistor of resistance R = RV.  
[6]  
Agilent Application Note 1050, Low Cost, Surface Mount Power Limiters.  
9
After ramping up from room  
temperature, the circuit board  
with components attached to it  
(held in place with solder paste)  
passes through one or more  
preheat zones. The preheat zones  
increase the temperature of the  
board and components to prevent  
thermal shock and begin evapo-  
rating solvents from the solder  
paste. The reflow zone briefly  
elevates the temperature suffi-  
ciently to produce a reflow of the  
solder.  
These parameters are typical for a  
surface mount assembly process  
for Agilent diodes. As a general  
guideline, the circuit board and  
components should be exposed  
only to the minimum temperatures  
and times necessary to achieve a  
uniform reflow of solder.  
SMT Assembly  
Reliable assembly of surface  
mount components is a complex  
process that involves many  
material, process, and equipment  
factors, including: method of  
heating (e.g., IR or vapor phase  
reflow, wave soldering, etc.)  
circuit board material, conductor  
thickness and pattern, type of  
solder alloy, and the thermal  
conductivity and thermal mass of  
components. Components with a  
low mass, such as the SOT  
packages, will reach solder  
reflow temperatures faster than  
those with a greater mass.  
The rates of change of tempera-  
ture for the ramp-up and cool-  
down zones are chosen to be low  
enough to not cause deformation  
of the board or damage to compo-  
nents due to thermal shock. The  
maximum temperature in the  
Agilents diodes have been  
qualified to the time-temperature  
profile shown in Figure 17. This  
profile is representative of an IR  
reflow type of surface mount  
assembly process.  
reflow zone (T ) should not  
MAX  
exceed 235°C.  
250  
200  
TMAX  
150  
Reflow  
Zone  
100  
Preheat  
Zone  
Cool Down  
Zone  
50  
0
0
60  
120  
180  
240  
300  
TIME (seconds)  
Figure 17. Surface Mount Assembly Profile.  
10  
Package Dimensions  
Outline 23 ( SOT-23)  
1.02 (0.040)  
0.89 (0.035)  
1.03 (0.041)  
0.54 (0.021)  
0.37 (0.015)  
DATE CODE (X)  
*
0.89 (0.035)  
PACKAGE  
MARKING  
CODE (XX)  
3
1.40 (0.055)  
1.20 (0.047)  
2.65 (0.104)  
2.10 (0.083)  
X X X  
2
1
0.60 (0.024)  
0.45 (0.018)  
2.04 (0.080)  
1.78 (0.070)  
2.05 (0.080)  
1.78 (0.070)  
*
TOP VIEW  
0.180 (0.007)  
0.085 (0.003)  
*
0.152 (0.006)  
0.086 (0.003)  
3.06 (0.120)  
2.80 (0.110)  
1.04 (0.041)  
0.85 (0.033)  
0.69 (0.027)  
0.45 (0.018)  
0.10 (0.004)  
0.013 (0.0005)  
SIDE VIEW  
END VIEW  
THESE DIMENSIONS FOR HSMS-280X AND -281X FAMILIES ONLY.  
DIMENSIONS ARE IN MILLIMETERS (INCHES)  
*
Outline 143 ( SOT-143)  
0.92 (0.036)  
0.78 (0.031)  
DATE CODE (X)  
E
B
C
PACKAGE  
MARKING  
CODE (XX)  
1.40 (0.055)  
1.20 (0.047)  
2.65 (0.104)  
2.10 (0.083)  
X X X  
E
0.60 (0.024)  
0.45 (0.018)  
0.54 (0.021)  
0.37 (0.015)  
2.04 (0.080)  
1.78 (0.070)  
3.06 (0.120)  
2.80 (0.110)  
0.15 (0.006)  
0.09 (0.003)  
1.04 (0.041)  
0.85 (0.033)  
0.69 (0.027)  
0.45 (0.018)  
0.10 (0.004)  
0.013 (0.0005)  
DIMENSIONS ARE IN MILLIMETERS (INCHES)  
11  
Outline SOT-323  
( SC-70, 3 Lead)  
PACKAGE  
1.30 (0.051)  
MARKING  
DATE CODE (X)  
REF.  
CODE (XX)  
2.20 (0.087)  
X X X  
1.35 (0.053)  
1.15 (0.045)  
2.00 (0.079)  
0.650 BSC (0.025)  
0.425 (0.017)  
TYP.  
2.20 (0.087)  
1.80 (0.071)  
0.10 (0.004)  
0.00 (0.00)  
0.30 REF.  
0.20 (0.008)  
0.10 (0.004)  
1.00 (0.039)  
0.80 (0.031)  
0.25 (0.010)  
0.15 (0.006)  
10°  
0.30 (0.012)  
0.10 (0.004)  
DIMENSIONS ARE IN MILLIMETERS (INCHES)  
Outline SOT-363  
( SC-70, 6 Lead)  
PACKAGE  
1.30 (0.051)  
MARKING  
DATE CODE (X)  
REF.  
CODE (XX)  
2.20 (0.087)  
X X X  
1.35 (0.053)  
1.15 (0.045)  
2.00 (0.079)  
0.650 BSC (0.025)  
0.425 (0.017)  
TYP.  
2.20 (0.087)  
1.80 (0.071)  
0.10 (0.004)  
0.00 (0.00)  
0.30 REF.  
1.00 (0.039)  
0.80 (0.031)  
0.20 (0.008)  
0.10 (0.004)  
10°  
0.30 (0.012)  
0.10 (0.004)  
0.25 (0.010)  
0.15 (0.006)  
DIMENSIONS ARE IN MILLIMETERS (INCHES)  
Part Number Ordering Information  
No. of  
Part Number  
HSMS-285x-TR2*  
HSMS-285x-TR1*  
HSMS-285x-BLK *  
Devices  
10000  
3000  
Container  
13" Reel  
7" Reel  
100  
antistatic bag  
where x = 0, 2, 5, B, C, L and P for HSMS-285x.  
Device Orientation  
REEL  
TOP VIEW  
4 mm  
END VIEW  
8 mm  
CARRIER  
TAPE  
###  
###  
###  
###  
USER  
FEED  
DIRECTION  
Note: “###” represents Package Marking Code, Date Code.  
COVER TAPE  
Tape Dimensions and Product Orientation  
For Outline SOT-323 ( SC-70 3 Lead)  
P
P
D
2
P
0
E
F
W
C
D
1
t
(CARRIER TAPE THICKNESS)  
T (COVER TAPE THICKNESS)  
t
1
K
8° MAX.  
5° MAX.  
0
A
B
0
0
DESCRIPTION  
SYMBOL  
SIZE (mm)  
SIZE (INCHES)  
CAVITY  
LENGTH  
WIDTH  
DEPTH  
PITCH  
A
B
K
P
D
2.24 ± 0.10  
2.34 ± 0.10  
1.22 ± 0.10  
4.00 ± 0.10  
1.00 + 0.25  
0.088 ± 0.004  
0.092 ± 0.004  
0.048 ± 0.004  
0.157 ± 0.004  
0.039 + 0.010  
0
0
0
BOTTOM HOLE DIAMETER  
1
0
PERFORATION  
DIAMETER  
PITCH  
POSITION  
D
P
E
1.55 ± 0.05  
4.00 ± 0.10  
1.75 ± 0.10  
0.061 ± 0.002  
0.157 ± 0.004  
0.069 ± 0.004  
CARRIER TAPE WIDTH  
THICKNESS  
W
8.00 ± 0.30  
0.315 ± 0.012  
t
0.255 ± 0.013 0.010 ± 0.0005  
5.4 ± 0.10 0.205 ± 0.004  
0.062 ± 0.001 0.0025 ± 0.00004  
1
COVER TAPE  
WIDTH  
C
www.semiconductor.agilent.com  
TAPE THICKNESS  
T
t
Data subject to change.  
Copyright © 1999 Agilent Technologies  
Obsoletes 5968-5437E, 5968-5908E,  
5968-2355E  
DISTANCE  
CAVITY TO PERFORATION  
(WIDTH DIRECTION)  
F
3.50 ± 0.05  
0.138 ± 0.002  
CAVITY TO PERFORATION  
(LENGTH DIRECTION)  
P
2
2.00 ± 0.05  
0.079 ± 0.002  
5968-7457E (11/99)  

相关型号:

DEMO-IAM9156-3

IAM-91563 down-converting mixer demonstration board
ETC

DEMO-MGA-12516B

Low Noise, High Linearity Match Pair Low Noise Amplifier
BOARDCOM

DEMO-MGA-16X16A

Dual LNA for Balanced Application 450 – 1450 MHz
BOARDCOM

DEMO-MGA-16X16B

Dual LNA for Balanced Application 450 – 1450 MHz
BOARDCOM

DEMO-MGA-1X516A

Low Noise, High Linearity Match Pair Low Noise Amplifier
BOARDCOM

DEMO-MGA-30X16

½ Watt High Linearity Amplifi er
BOARDCOM

DEMO-MGA-30X16B

150MHz – 1GHz ½ Watt High Linearity Amplifi er
BOARDCOM

DEMO-MGA-43128

High Linearity (700-800) MHz Wireless Data Power Amplifi er
BOARDCOM

DEMO-MGA-43X28

High Linearity (700-800) MHz Wireless Data Power Amplifi er
BOARDCOM

DEMO-MGA-665P8A

GaAs Enhancement-Mode PHEMT 0.5 – 6 GHz Low Noise Amplifier
BOARDCOM

DEMO-MGA-665P8B

GaAs Enhancement-Mode PHEMT
BOARDCOM

DEMO-MGA-6X563

Current-Adjustable, Low Noise Amplifi er
BOARDCOM