DEMO-HSMP38-XX [ETC]

Demonstration Circuit Board ; 演示电路板
DEMO-HSMP38-XX
型号: DEMO-HSMP38-XX
厂家: ETC    ETC
描述:

Demonstration Circuit Board
演示电路板

文件: 总8页 (文件大小:76K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Surface Mount RF PIN Low  
Distortion Attenuator Diodes  
Technical Data  
HSMP-381x Series and  
HSMP-481x Series  
Features  
Package Lead Code  
Identification, SOT-23  
( Top View)  
Package Lead Code  
Identification, SOT-323  
( Top View)  
• Diodes Optimized for:  
– Low Distortion Attenuating  
– Microwave Frequency  
Operation  
SINGLE  
3
SERIES  
3
SERIES  
SINGLE  
• Surface Mount Packages  
– Single and Dual Versions  
– Tape and Reel Options  
Available  
1
2
1
2
B
C
#0  
#2  
COMMON  
ANODE  
3
COMMON  
CATHODE  
3
COMMON  
ANODE  
COMMON  
CATHODE  
• Low Failure in Time ( FIT)  
Rate[1]  
Note:  
1. For more information see the  
Surface Mount PIN Reliability Data  
Sheet.  
1
2
1
2
E
F
#4  
#3  
DUAL CATHODE  
DUAL CATHODE  
3
Description/Applications  
The HSMP-381x series is  
1
2
4810  
481B  
specifically designed for low  
distortion attenuator applica-  
tions. The HSMP-481x products  
feature ultra low parasitic  
inductance in the SOT-23 and  
SOT-323 packages. They are  
specifically designed for use at  
frequencies which are much  
higher than the upper limit for  
conventional diodes.  
A SPICE model is not available  
for PIN diodes as SPICE does not  
provide for a key PIN diode  
characteristic, carrier lifetime.  
2
Absolute Maximum Ratings[1] TC = +25°C  
Symbol Parameter  
Unit  
SOT-23  
SOT-323  
If  
Forward Current (1 µs Pulse) Amp  
1
Same as VBR  
150  
1
Same as VBR  
150  
PIV  
Tj  
Peak Inverse Voltage  
Junction Temperature  
Storage Temperature  
Thermal Resistance[2]  
V
°C  
Tstg  
θjc  
°C  
-65 to 150  
500  
-65 to 150  
150  
°C/W  
Notes:  
1. Operation in excess of any one of these conditions may result in permanent damage to  
the device.  
2.  
TC = +25°C, where TC is defined to be the temperature at the package pins where  
contact is made to the circuit board.  
Electrical Specifications TC = +25°C ( Each Diode)  
Conventional Diodes  
Minimum Maximum Maximum  
Minimum  
High  
Maximum  
Low  
Part  
Package  
Breakdown  
Total  
Total  
Number Marking Lead  
Voltage  
Resistance Capacitance Resistance Resistance  
HSMP-  
Code  
Code Configuration  
VBR ( V)  
RT ( )  
CT ( pF)  
RH ( )  
RL ( )  
3810  
3812  
3813  
3814  
381B  
381C  
381E  
381F  
E0[1]  
E2[1]  
E3[1]  
E4[1]  
E0[2]  
E2[2]  
E3[2]  
E4[2]  
0
2
Single  
100  
3.0  
0.35  
1500  
10  
Series  
3
4
Common Anode  
Common Cathode  
Single  
B
C
E
F
Series  
Common Anode  
Common Cathode  
Test Conditions  
VR = VBR  
Measure  
IF = 100 mA  
f = 100 MHz  
VR = 50 V  
f = 1 MHz  
IR = 0.01 mA IF = 20 mA  
f = 100 MHz f= 100 MHz  
IR 10 µA  
High Frequency ( Low Inductance, 500 MHz – 3 GHz) PIN Diodes  
Minimum Maximum  
Typical  
Total  
Maximum  
Total  
Typical  
Total  
Part  
Package  
Breakdown  
Series  
Number Marking Lead  
Voltage  
Resistance Capacitance Capacitance Inductance  
HSMP-  
Code  
Code Configuration  
VBR ( V)  
RS ()  
CT ( pF)  
CT ( pF)  
LT ( nH)  
4810  
481B  
EB  
EB  
B[1] Dual Cathode  
B[2] Dual Cathode  
100  
3.0  
0.35  
0.4  
1.0  
Test Conditions  
VR = VBR  
Measure  
IR 10 µA  
IF = 100 mA  
VR = 50 V  
f = 1 MHz  
VR = 50 V f = 500 MHz–  
f = 1 MHz  
VR = 0 V  
3 GHz  
Notes:  
1. Package marking code is white.  
2. Package laser marked.  
3
Typical Parameters at TC = 25°C  
Part Number  
HSMP-  
Series Resistance  
Carrier Lifetime  
Reverse Recovery Time  
Trr (ns)  
Total Capacitance  
CT ( pF)  
RS ( )  
τ ( ns)  
381x  
75  
1500  
300  
0.27 @ 50 V  
f = 1 MHz  
Test Conditions  
IF = 1 mA  
IF = 50 mA  
V = 10 V  
R
f = 100 MHz  
IR = 250 mA  
IF = 20 mA  
90% Recovery  
Typical Parameters at TC = 25°C ( unless otherwise noted) , Single Diode  
120  
110  
100  
90  
10000  
1000  
100  
10  
0.45  
0.40  
0.35  
0.30  
0.25  
0.20  
Diode Mounted as a  
Series Attenuator  
in a 50 Ohm Microstrip  
and Tested at 123 MHz  
TA = +85°C  
T
T
A = +25°C  
A = –55°C  
1 MHz  
80  
70  
30 MHz  
60  
50  
frequency>100 MHz  
1
0.01  
40  
1000  
0.15  
0.1  
1
10  
100  
100  
10  
0
2
4
6
8
10 12 14 16 18 20  
I
– FORWARD BIAS CURRENT (mA)  
REVERSE VOLTAGE (V)  
DIODE RF RESISTANCE (OHMS)  
F
Figure 1. RF Capacitance vs. Reverse  
Bias.  
Figure 3. 2nd Harmonic Input  
Intercept Point vs. Diode RF  
Resistance.  
Figure 2. RF Resistance vs. Forward  
Bias Current.  
100  
10  
Typical Applications for Multiple Diode Products  
VARIABLE BIAS  
1
RF IN/OUT  
INPUT  
0.1  
125°C 25°C –50°C  
0.01  
0
0.2  
0.4  
0.6  
0.8  
1.0 1.2  
V
– FORWARD VOLTAGE (mA)  
F
Figure 4. Forward Current vs.  
Forward Voltage.  
FIXED  
BIAS  
VOLTAGE  
Figure 5. Four Diode π Attenuator. See Application Note 1048  
for Details.  
4
Typical Applications for HSMP-481x Low Inductance Series  
3
Microstrip Series  
Connection for  
HSMP-481x Series  
In order to take full advantage of  
the low inductance of the  
HSMP-481x series when using  
them in series applications,  
both lead 1 and lead 2 should be  
connected together, as shown in  
Figure 7.  
1
2
HSMP-481x  
Figure 7. Circuit Layout.  
Figure 6. Internal Connections.  
Microstrip Shunt  
Connections for  
50 OHM MICROSTRIP LINES  
1.5 nH  
1.5 nH  
HSMP-481x Series  
In Figure 8, the center  
conductor of the microstrip  
line is interrupted and  
R
j
0.3 pF  
leads 1 and 2 of the  
HSMP-481x series diode are  
placed across the resulting gap.  
This forces the 1.5 nH lead  
inductance of leads 1 and 2 to  
appear as part of a low pass  
filter, reducing the shunt  
0.3 nH  
0.3 nH  
PAD CONNECTED TO  
GROUND BY TWO  
VIA HOLES  
0.08  
0.9 + 2.5  
Rj  
Ib  
Figure 8. Circuit Layout.  
Figure 9. Equivalent Circuit.  
parasitic inductance and  
increasing the maximum  
available attenuation. The  
0.3 nHof shunt inductance  
external to the diode is created  
by the via holes, and is a good  
estimate for 0.032" thick material.  
5
Typical Applications for HSMP-481x Low Inductance Series ( continued)  
Co-Planar Waveguide  
Groundplane  
Co-Planar Waveguide  
Shunt Connection for  
Center Conductor  
HSMP-481x Series  
Co-Planar waveguide, with  
Groundplane  
ground on the top side of the  
printed circuit board, is shown  
in Figure 10. Since it eliminates  
the need for via holes to ground,  
it offers lower shunt parasitic  
Figure 10. Circuit Layout.  
inductance and higher maximum  
attenuation when compared to a  
microstrip circuit.  
R
0.3 pF  
j
0.75 nH  
Figure 11. Equivalent Circuit.  
Equivalent Circuit Model  
HSMS-381x Chip*  
R
R
s
j
2.5 Ω  
Cj  
RT = 2.5 + Rj  
CT = CP + Cj  
80  
0.18 pF*  
* Measured at -20 V  
Rj =  
I0.9  
I = Forward Bias Current in mA  
*See AN1124 for package models.  
6
SMT Assembly  
passes through one or more  
Assembly Information  
SOT-323 PCB Footprint  
Reliable assembly of surface  
mount components is a complex  
process that involves many  
material, process, and equipment  
factors, including: method of  
heating (e.g., IR or vapor phase  
reflow, wave soldering, etc.)  
circuit board material, conductor  
thickness and pattern, type of  
solder alloy, and the thermal  
conductivity and thermal mass of  
components. Components with a  
preheat zones. The preheat zones  
increase the temperature of the  
board and components to prevent  
thermal shock and begin evaporat-  
ing solvents from the solder paste.  
The reflow zone briefly elevates  
the temperature sufficiently to  
produce a reflow of the solder.  
A recommended PCB pad layout  
for the miniature SOT-323 (SC-70)  
package is shown in Figure 12  
(dimensions are in inches). This  
layout provides ample allowance  
for package placement by auto-  
mated assembly equipment  
without adding parasitics that  
could impair the performance.  
The rates of change of tempera-  
ture for the ramp-up and cool-  
down zones are chosen to be low  
0.026  
low mass, such as the SOT-323/-23 enough to not cause deformation  
package, will reach solder reflow  
temperatures faster than those  
with a greater mass.  
of the board or damage to compo-  
nents due to thermal shock. The  
maximum temperature in the  
0.07  
reflow zone (T ) should not  
MAX  
Agilents diodes have been  
qualified to the time-temperature  
profile shown in Figure 14. This  
profile is representative of an IR  
reflow type of surface mount  
assembly process.  
exceed 235°C.  
0.035  
These parameters are typical for a  
surface mount assembly process  
for Agilent diodes. As a general  
guideline, the circuit board and  
components should be exposed  
only to the minimum tempera-  
tures and times necessary to  
achieve a uniform reflow of  
solder.  
0.016  
Figure 12. PCB Pad Layout  
( dimensions in inches) .  
After ramping up from room  
temperature, the circuit board  
with components attached to it  
(held in place with solder paste)  
SOT-23 PCB Footprint  
0.037  
0.95  
0.037  
0.95  
250  
200  
TMAX  
0.079  
2.0  
0.035  
0.9  
150  
Reflow  
Zone  
0.031  
0.8  
100  
inches  
DIMENSIONS IN  
mm  
Preheat  
Zone  
Cool Down  
Zone  
50  
0
Figure 13. PCB Pad Layout.  
0
60  
120  
180  
240  
300  
TIME (seconds)  
Figure 14. Surface Mount Assembly Profile.  
7
Package Dimensions  
Outline SOT-323 ( SC-70)  
Outline 23 ( SOT-23)  
PACKAGE  
MARKING  
CODE (XX)  
1.02 (0.040)  
0.89 (0.035)  
1.30 (0.051)  
REF.  
DATE CODE (X)  
0.54 (0.021)  
0.37 (0.015)  
DATE CODE (X)  
PACKAGE  
MARKING  
CODE (XX)  
3
2.20 (0.087)  
2.00 (0.079)  
1.35 (0.053)  
1.15 (0.045)  
X X X  
1.40 (0.055)  
1.20 (0.047)  
2.65 (0.104)  
2.10 (0.083)  
X X X  
2
1
0.650 BSC (0.025)  
0.50 (0.024)  
0.45 (0.018)  
2.04 (0.080)  
1.78 (0.070)  
0.425 (0.017)  
TYP.  
2.20 (0.087)  
1.80 (0.071)  
TOP VIEW  
0.10 (0.004)  
0.00 (0.00)  
0.30 REF.  
0.152 (0.006)  
0.066 (0.003)  
3.06 (0.120)  
2.80 (0.110)  
1.02 (0.041)  
0.85 (0.033)  
0.20 (0.008)  
0.10 (0.004)  
1.00 (0.039)  
0.80 (0.031)  
0.25 (0.010)  
0.15 (0.006)  
10°  
0.30 (0.012)  
0.10 (0.004)  
0.69 (0.027)  
0.45 (0.018)  
0.10 (0.004)  
0.013 (0.0005)  
DIMENSIONS ARE IN MILLIMETERS (INCHES)  
SIDE VIEW  
END VIEW  
DIMENSIONS ARE IN MILLIMETERS (INCHES)  
Package Characteristics  
Lead Material ................................... Copper (SOT-323); Alloy 42 (SOT-23)  
Lead Finish ............................................................................ Tin-Lead 85-15%  
Maximum Soldering Temperature .............................. 260°C for 5 seconds  
Minimum Lead Strength .......................................................... 2 pounds pull  
Typical Package Inductance .................................................................. 2 nH  
Typical Package Capacitance ..............................0.08 pF (opposite leads)  
Ordering Information  
Specify part number followed by option. For example:  
HSMP  
-
381x  
- XXX  
Bulk or Tape and Reel Option  
Part Number; x = Lead Code  
Surface Mount PIN  
Option Descriptions  
-BLK = Bulk, 100 pcs. per antistatic bag  
-TR1 = Tape and Reel, 3000 devices per 7" reel  
-TR2 = Tape and Reel, 10,000 devices per 13" reel  
Tape and Reeling conforms to Electronic Industries RS-481, “Taping of  
Surface Mounted Components for Automated Placement.”  
Device Orientation  
REEL  
TOP VIEW  
4 mm  
END VIEW  
8 mm  
CARRIER  
TAPE  
###  
###  
###  
###  
USER  
FEED  
DIRECTION  
Note: “###” represents Package Marking Code,  
Date Code.  
COVER TAPE  
Tape Dimensions  
For Outline SOT-323 ( SC-70 3 Lead)  
P
P
D
2
P
0
E
F
W
C
D
1
t
(CARRIER TAPE THICKNESS)  
T (COVER TAPE THICKNESS)  
t
1
K
8° MAX.  
5° MAX.  
0
A
B
0
0
DESCRIPTION  
SYMBOL  
SIZE (mm)  
SIZE (INCHES)  
CAVITY  
LENGTH  
WIDTH  
DEPTH  
PITCH  
A
B
K
P
D
2.24 ± 0.10  
2.34 ± 0.10  
1.22 ± 0.10  
4.00 ± 0.10  
1.00 + 0.25  
0.088 ± 0.004  
0.092 ± 0.004  
0.048 ± 0.004  
0.157 ± 0.004  
0.039 + 0.010  
0
0
0
BOTTOM HOLE DIAMETER  
1
0
PERFORATION  
DIAMETER  
PITCH  
POSITION  
D
P
E
1.55 ± 0.05  
4.00 ± 0.10  
1.75 ± 0.10  
0.061 ± 0.002  
0.157 ± 0.004  
0.069 ± 0.004  
CARRIER TAPE WIDTH  
THICKNESS  
W
8.00 ± 0.30  
0.315 ± 0.012  
t
0.255 ± 0.013 0.010 ± 0.0005  
5.4 ± 0.10 0.205 ± 0.004  
0.062 ± 0.001 0.0025 ± 0.00004  
1
COVER TAPE  
WIDTH  
C
TAPE THICKNESS  
T
t
DISTANCE  
CAVITY TO PERFORATION  
(WIDTH DIRECTION)  
F
3.50 ± 0.05  
0.138 ± 0.002  
CAVITY TO PERFORATION  
(LENGTH DIRECTION)  
P
2
2.00 ± 0.05  
0.079 ± 0.002  
www.semiconductor.agilent.com  
Data subject to change.  
Copyright © 1999 Agilent Technologies  
5968-5427E (11/99)  

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