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BFP690 [ETC]

?NPN SiGe RF Transistor. medium power amps. low noise RF transistor in SCT595 Package. 4V. 350mA? ; ？ NPN硅锗RF晶体管。中等功率放大器。在SCT595封装的低噪声RF晶体管。 4V 。 350毫安？\n
BFP690
型号： BFP690
厂家： ETC    ETC
描述：

?NPN SiGe RF Transistor. medium power amps. low noise RF transistor in SCT595 Package. 4V. 350mA?
？ NPN硅锗RF晶体管。中等功率放大器。在SCT595封装的低噪声RF晶体管。 4V 。 350毫安？\n

晶体 放大器 晶体管 功率放大器
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BFP690  
NPN Silicon Germanium RF Transistor  
Preliminary data  
For medium power amplifiers  
4
5
Maxim. available Gain G = 17 dB at 1.8 GHz  
Gold metallization for high reliability  
ma  
3
2
70 GHz f - Silicon Germanium technology  
T
1
VPW05980  
ESD: Electrostatic discharge sensitive device, observe handling precaution!  
Type  
BFP690  
Marking  
R9s  
Pin Configuration  
1=B 2=E 3=C 4=C 5=E  
Package  
SCT595  
-
Maximum Ratings  
Parameter  
Symbol  
Value  
4
13  
Unit  
V
Collector-emitter voltage  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
V
CEO  
CES  
CBO  
EBO  
13  
1.2  
350  
20  
mA  
mW  
°C  
I
C
Base current  
Total power dissipation  
I
B
1)  
1000  
P
tot  
T
80°C  
S
150  
-65 ... 150  
-65 ... 150  
Junction temperature  
Ambient temperature  
Storage temperature  
T
j
T
A
T
stg  
Thermal Resistance  
Parameter  
Symbol  
R
Value  
Unit  
K/W  
2)  
Junction - soldering point  
60  
thJS  
T is measured on the collector lead at the soldering point to the pcb  
1
S
2
For calculation of R  
please refer to Application Note Thermal Resistance  
thJA  
Oct-30-2002  
1
BFP690  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
DC Characteristics  
4
4.5  
-
V
Collector-emitter breakdown voltage  
V
(BR)CEO  
I = 1 mA, I = 0 A  
C
B
-
-
-
-
100 nA  
Collector-base cutoff current  
= 5 V, I = 0 A  
I
CBO  
V
CB  
E
10  
µA  
-
Emitter-base cutoff current  
= 0.5 V, I = 0 A  
I
EBO  
V
EB  
C
100  
180  
250  
DC current gain  
I = 200 mA, V = 3 V  
h
FE  
C
CE  
Oct-30-2002  
2
BFP690  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
AC Characteristics (verified by random sampling)  
Transition frequency  
-
37  
0.6  
1.25  
3
-
-
-
-
GHz  
pF  
f
T
I = 200 mA, V = 3 V, f = 0.5 GHz  
C
CE  
-
-
-
Collector-base capacitance  
= 3 V, f = 1 MHz  
C
cb  
V
CB  
Collector emitter capacitance  
= 3 V, f = 1 MHz  
C
ce  
V
CE  
Emitter-base capacitance  
= 0.5 V, f = 1 MHz  
C
eb  
V
EB  
dB  
Noise figure  
I = 35 mA, V = 3 V, f = 1.8 GHz, Z = Z  
Sopt  
F
-
-
1
1.2  
-
-
C
CE  
S
I = 35 mA, V = 3 V, f = 3 GHz, Z = Z  
C
CE  
S
Sopt  
1)  
Power gain, maximum available  
G
ma  
I = 200 mA, V = 3 V, Z = Z  
,
C
CE  
S
Sopt  
Z = Z  
, f = 1.8 GHz  
Lopt  
-
-
17.5  
13  
-
-
L
I = 200 mA, V = 3 V, Z = Z  
,
C
CE  
S
Sopt  
Z = Z  
, f = 3 GHz  
L
Lopt  
2
Transducer gain  
|S  
|
dB  
21e  
I = 200 mA, V = 3 V, Z = Z = 50 ,  
C
CE  
S
L
f = 1.8 GHz  
-
11  
-
I = 200 mA, V = 3 V, Z = Z = 50 ,  
C
CE  
S
L
f = 3 GHz  
-
-
6.5  
29  
-
-
2)  
Third order intercept point at output  
= 3 V, I = 200 mA, f = 1.8 GHz,  
IP  
dBm  
3
V
CE  
C
Z = Z = 50  
S
L
1dB Compression point at output  
P
-
19.5  
-
-1dB  
I = 200 mA, V = 3 V, Z = Z = 50 ,  
C
CE  
S
L
f = 1.8 GHz  
1
1/2  
= |S / S | (k-(k²-1)  
21 12  
G
)
ma  
2
IP3 value depends on termination of all intermodulation frequency components.  
Termination used for this measurement is 50 from 0.1 MHz to 6 GHz  
Oct-30-2002  
3
BFP690  
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):  
Transitor Chip Data:  
1.41  
1000  
2
fA  
-
-
A
-
1.025  
145  
1
-
fA  
-
pA  
mA  
IS =  
VAF =  
NE =  
BF =  
IKF =  
BR =  
IKR =  
RB =  
RE =  
VJE =  
XTF =  
PTF =  
MJC =  
CJS =  
NK =  
450  
0.9  
40  
NF =  
ISE =  
NR =  
2
V
-
mA  
1.2  
VAR =  
NC =  
RBM =  
CJE =  
TF =  
ITF =  
VJC =  
TR =  
MJS =  
XTI =  
AF =  
TITF1  
45  
ISC =  
IRB =  
RC =  
MJE =  
VTF =  
CJC =  
XCJC =  
VJS =  
EG =  
1.8  
10.61  
0.4312  
0.3  
0.6  
477.5  
1
0.6  
1.078  
298  
0.4442  
0.14  
0.8  
5
0
0.5  
688.1  
-1.42  
0.8  
0.3836  
1.592  
1.9  
2.9  
0.6  
0.2  
-
V
-
deg  
-
fF  
-
fF  
ps  
A
V
ns  
-
-
V
fF  
-
V
eV  
K
0.27  
3
-
FC =  
KF =  
TITF2  
TNOM  
2
-
-
1.046E-11  
1.0E-5  
-0.0065  
All parameters are ready to use, no scalling is necessery. Extracted on behalf of Infineon Technologies AG by:  
Institut für Mobil- und Satellitentechnik (IMST)  
Package Equivalent Circuit:  
15  
4
R
C
B
S
LBC =  
LCC =  
LEC =  
LBB =  
LCB =  
LEB =  
CBEC =  
CBCC =  
CES =  
CBS =  
CCS =  
CCEO =  
RBS =  
RCS =  
RES =  
pH  
pH  
pH  
pH  
pH  
pH  
fF  
C
B
C
C
L
C
C
4
C
900  
700  
130  
864.4  
399.9  
450  
535  
135  
130  
190  
B
F
P
6
9
0
_
C
h
i
p
S
E
B
L
B
B
L
B
C
R
C
C
S
L
C
B
B
C
C
B
E
C
R
C
E
S
L
E
C
fF  
fF  
fF  
fF  
L
E
B
C
C
E
O
fF  
T
=
2
5
°
C
I
t
f
=
2
9
0
0
*
(
1
-
6
.
5
e
-
3
(
T
-
2
5
)
+
1
.
0
e
-
5
*
(
T
-
2
5
)
^
2
)
* E  
340  
340  
For examples and ready to use parameters  
please contact your local Infineon Technologies  
distributor or sales office to obtain a Infineon  
Technologies CD-ROM or see Internet:  
http//www.infineon.com/silicondiscretes  
Valid up to 6GHz  
Oct-30-2002  
4
BFP690  
Total power dissipation P = (T )  
Permissible Pulse Load R  
= (t )  
tot  
S
thJS  
p
10 2  
1100  
mW  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
K/W  
10 1  
D = 0.5  
0.2  
0.1  
0.05  
0.02  
0.01  
0.005  
0
10 0  
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2  
10 0  
°C  
°C  
0
15 30 45 60 75 90 105 120  
150  
T
t
p
S
Permissible Pulse Load  
Collector-base capacitance C = (V  
)
cb  
CB  
P
/P  
= (t )  
f = 1MHz  
totmax totDC  
p
10 2  
2
pF  
1.6  
1.4  
1.2  
1
-
D = 0  
0.005  
0.01  
0.02  
0.05  
0.1  
10 1  
0.2  
0.8  
0.6  
0.4  
0.2  
0.5  
10 0  
0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2  
10 0  
0
2
4
6
8
10  
13  
s
V
t
V
CB  
p
Oct-30-2002  
5
BFP690  
Transition frequency f = (I )  
Power Gain G , G = (f),  
ma ms  
T
C
f = 0.5GHz  
|S |² = f (f)  
21  
V
= parameter in V  
V
= 3V, I = 200mA  
CE  
CE  
C
45  
55  
dB  
GHz  
45  
40  
35  
30  
25  
20  
15  
10  
5
35  
30  
25  
20  
15  
10  
5
3 to 4  
Gms  
Gma  
2
1
|S21|²  
0
0.7  
0
-5  
mA  
GHz  
0
50 100 150 200 250 300  
400  
0
1
2
3
4
6
I
f
C
Power gain G , G  
=
(I )  
Power gain G , G = (V  
)
ma  
ms  
C
ma  
ms  
CE  
V
= 3V  
I = 200mA  
CE  
C
f = parameter  
f = parameter in GHz  
28  
dB  
30  
dB  
24  
22  
20  
18  
16  
14  
12  
10  
8
0.9  
1.8  
0.9  
1.8  
20  
15  
10  
5
2.4  
3
2.4  
3
4
5
6
4
5
6
6
4
0
mA  
V
0
50 100 150 200 250 300  
400  
0.5  
1
1.5  
2
2.5  
3
3.5  
4.5  
I
V
CE  
C
Oct-30-2002  
6

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