BD791/D [ETC]
NPN Plastic Silicon Power Transistor ; NPN硅塑料功率晶体管\n
| 型号： | BD791/D |
| 厂家： | 
ETC |
| 描述： | NPN Plastic Silicon Power Transistor
|
| 文件： | 总8页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductort
NPN Plastic Silicon Power
Transistor
BD791
ON Semiconductor Preferred Device
. . . designed for low power audio amplifier and low–current, high
speed switching applications.
4 AMPERE
POWER TRANSISTOR
SILICON
• High Collector–Emitter Sustaining Voltage —
V
= 100 Vdc (Min)
CEO(sus)
• High DC Current Gain @ I = 200 mAdc
C
100 VOLTS
15 WATTS
h
FE
= 40–250
• Low Collector–Emitter Saturation Voltage —
= 0.5 Vdc (Max) @ I = 500 mAdc
V
CE(sat)
C
• High Current Gain — Bandwidth Product —
f = 40 MHz (Min) @ I = 100 mAdc)
T
C
*MAXIMUM RATINGS
Rating
Symbol
Max
100
100
6.0
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
V
CB
CASE 77–09
TO–225AA TYPE
V
EBO
Collector Current — Continuous
— Peak
I
C
4.0
8.0
Base Current
I
B
1.0
Adc
Total Power Dissipation @ T = 25_C
P
15
0.12
Watts
W/_C
_C
C
D
Derate above 25_C
Operating and Storage Junction
Temperature Range
T ,T
J
–65 to +150
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
8.34
_C/W
θ
JC
16
1.6
1.2
0.8
0.4
0
12
8.0
4.0
0
20
40
60
80
100
120
140
160
T, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
March, 2001 – Rev. 2
BD791/D
BD791
*ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
V
Vdc
CEO(sus)
(I = 10 mAdc, I = 0)
C
B
100
—
—
Collector Cutoff Current
(V = 50 Vdc, I = 0)
I
µAdc
CEO
CE
B
100
Collector Cutoff Current
I
CEX
(V = 100 Vdc, V
= 1.5 Vdc)
= 1.5 Vdc, T = 125_C)
CE
BE(off)
—
—
1.0
0.1
µAdc
mAdc
(V = 50 Vdc, V
CE
BE(off)
C
Emitter Cutoff Current (V = 6.0 Vdc, I = 0)
I
—
1.0
µAdc
EB
ON CHARACTERISTICS (1)
DC Current Gain
C
EBO
h
—
FE
(I = 200 mAdc, V = 3 0 Vdc)
C
CE
40
20
10
5.0
250
—
—
(I = 1.0 Adc, V = 3.0 Vdc)
C
CE
(I = 2.0 Adc, V = 3.0 Vdc)
C
CE
(I = 4.0 Adc, V = 3.0 Vdc)
C
CE
—
Collector Emitter Saturation Voltage
(I = 500 mAdc, I = 50 mAdc)
V
V
Vdc
CE(sat)
C
B
—
—
—
—
0.5
1.0
2.5
3.0
(I = 1.0 Adc, I = 100 mAdc)
C
B
(I = 2.0 Adc, I = 200 mAdc)
C
B
(I = 4.0 Adc, I = 800 mAdc)
C
B
Base–Emitter Saturation Voltage (I = 2.0 Adc, I = 200 mAdc)
—
—
1.8
1.5
Vdc
Vdc
C
B
BE(sat)
Base–Emitter On Voltage (I = 200 mAdc, V = 3.0 Vdc)
V
BE(on)
C
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
CE
f
T
40
—
MHz
pF
(I = 100 mAdc, V = 10 Vdc, f = 10 MHz)
C
CE
Output Capacitance
C
ob
(V = 10 Vdc, I = 0, f = 0.1 MHz)
CB
C
—
50
—
Small–Signal Current Gain
(I = 200 mAdc, V = 10 Vdc, f = 1.0 kHz)
h
fe
10
—
C
CE
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.
500
+ 30 V
V
CC
300
200
T = 25°C
J
25 µs
R
C
V
CC
I /I = 10
= 30 V
+ 11 V
0
C
B
SCOPE
100
R
B
70
50
- 9.0 V
51
D
1
t
r
30
20
t , t v 10 ns
r
f
DUTY CYCLE = 1.0%
t @ V
d
= 5.0 V
- 4 V
BE(off)
R
B
AND R VARIED TO OBTAIN DESIRED CURRENT LEVELS
C
10
7.0
D MUST BE FAST RECOVERY TYPE, eg
1
MBR340 USED ABOVE I [ 100 mA
B
5.0
0.04
MSD6100 USED BELOW I [ 100 mA
B
FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES.
0.06 0.1
0.2
0.4 0.6
1.0
2.0
4.0
I , COLLECTOR CURRENT (AMP)
C
Figure 2. Switching Time Test Circuit
Figure 3. Turn–On Time
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2
BD791
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.05
P
(pk)
0.1
0.07
0.05
R
R
= r(t) R
θ
JC(t) JC
θ
= 8.34°C/W MAX
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.02
0.01
t
1
0.03
0.02
t
2
1
0 (SINGLE PULSE)
T
- T = P
C
R
θ
(pk) JC(t)
J(pk)
DUTY CYCLE, D = t /t
1
2
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
t, TIME (ms)
Figure 4. Thermal Response
10
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
100 µs
500 µs
5.0
1.0 ms
breakdown. Safe operating area curves indicate I – V
C
CE
2.0
dc
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
1.0
0.5
T = 150°C
J
5.0 ms
BONDING WIRE LIMITED
THERMALLY LIMITED @ T = 25°C
ą(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
The data of Figure 5 is based on T
variable depending on conditions. Second breakdown pulse
= 150_C: T is
J(pk)
C
C
0.1
limits are valid for duty cycles to 10% provided T
J(pk)
0.05
v 150_C,
T
may be calculated from the data in
J(pk)
CURVES APPLY BELOW RATED V
CEO
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.02
0.01
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region Safe Operating Area
2000
1000
200
T = 25°C
J
T = 25°C
J
V
CC
I /I = 10
= 30 V
700
500
C
B
100
C
ib
I = I
B1 B2
t
s
300
200
70
50
100
70
50
t
f
C
30
20
ob
30
20
10
1.0
0.04 0.06 0.1
0.2
0.4 0.6
1.0
2.0
4.0
2.0 3.0
5.0 7.0
10 20 30
50 70 100
I , COLLECTOR CURRENT (AMP)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 6. Turn–Off Time
Figure 7. Capacitance
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3
BD791
500
1.4
T = 25°C
V
V
= 1.0 V
= 3.0 V
J
T = 150°C
CE
300
200
J
1.2
1.0
0.8
0.6
0.4
0.2
0
CE
25°C
-ā55°C
100
V
@ I /I = 10
C B
BE(sat)
70
50
V
@ V = 3.0 V
CE
BE(on)
30
20
I /I = 10
C B
5.0
V
CE(sat)
7.0
5.0
0.04 0.06 0.1
0.2
0.4 0.6
1.0
2.0
4.0
0.04 0.06 0.1
0.2
0.4 0.6
1.0
2.0
4.0
I , COLLECTOR CURRENT (AMP)
C
I , COLLECTOR CURRENT (AMP)
C
Figure 8. DC Current Gain
Figure 9. “On” Voltage
+ā2.5
*APPLIES FOR I /I ≤ h
C
B
FE/3
+ā2.0
+ā1.5
+ā1.0
+ā0.5
0
25°C to 150°C
*θ FOR V
VC
CE(sat)
- 55°C to 25°C
25°C to 150°C
-ā0.5
-ā1.0
-ā1.5
θ
FOR V
0.1
VB
BE
-ā2.0
-ā2.5
- 55°C to 25°C
0.04 0.06
0.2
0.4 0.6
1.0
2.0
4.0
I , COLLECTOR CURRENT (AMP)
C
Figure 10. Temperature Coefficient
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4
BD791
PACKAGE DIMENSIONS
CASE 77–09
TO–225AA TYPE
ISSUE W
–B–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
F
C
U
Q
M
INCHES
DIM MIN MAX
MILLIMETERS
–A–
MIN
10.80
7.50
2.42
0.51
2.93
MAX
11.04
7.74
2.66
0.66
3.30
1
2 3
A
B
C
D
F
0.425
0.295
0.095
0.020
0.115
0.435
0.305
0.105
0.026
0.130
H
K
G
H
J
0.094 BSC
2.39 BSC
0.050
0.015
0.575
5
0.095
0.025
0.655
1.27
0.39
14.61
5
2.41
0.63
16.63
K
M
Q
R
S
U
V
TYP
TYP
_
_
J
V
G
0.148
0.045
0.025
0.145
0.040
0.158
0.065
0.035
0.155
---
3.76
1.15
0.64
3.69
1.02
4.01
1.65
0.88
3.93
---
R
M
M
M
B
0.25 (0.010)
A
S
D 2 PL
M
M
M
B
0.25 (0.010)
A
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
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5
BD791
Notes
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6
BD791
Notes
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7
BD791
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BD791/D
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