BD791T [MOTOROLA]
4A, 100V, NPN, Si, POWER TRANSISTOR, TO-225AA, PLASTIC, CASE 77-09, 3 PIN;
| 型号： | BD791T |
| 厂家： | 
MOTOROLA |
| 描述： | 4A, 100V, NPN, Si, POWER TRANSISTOR, TO-225AA, PLASTIC, CASE 77-09, 3 PIN 局域网 开关 晶体管 |
| 文件： | 总8页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Order this document
by BD791/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
. . . designed for low power audio amplifier and low–current, high speed switching
applications.
4 AMPERE
POWER TRANSISTOR
SILICON
•
•
•
•
High Collector–Emitter Sustaining Voltage —
= 100 Vdc (Min)
V
CEO(sus)
High DC Current Gain @ I = 200 mAdc
C
100 VOLTS
15 WATTS
h
= 40–250
FE
Low Collector–Emitter Saturation Voltage —
= 0.5 Vdc (Max) @ I = 500 mAdc
V
CE(sat)
High Current Gain — Bandwidth Product —
= 40 MHz (Min) @ I = 100 mAdc)
C
f
T
C
*MAXIMUM RATINGS
Rating
Symbol
Max
100
100
6.0
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
V
CB
V
EBO
CASE 77–09
TO–225AA TYPE
Collector Current — Continuous
— Peak
I
C
4.0
8.0
Base Current
I
B
1.0
Adc
Total Power Dissipation @ T = 25 C
C
Derate above 25 C
P
D
15
0.12
Watts
W/ C
Operating and Storage Junction
Temperature Range
T ,T
J stg
–65 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
8.34
C/W
θJC
16
12
1.6
1.2
0.8
0.4
0
8.0
4.0
0
20
40
60
80
100
120
140
160
T, TEMPERATURE (
°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1998
*ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(I = 10 mAdc, I = 0)
V
Vdc
CEO(sus)
100
—
—
C
B
Collector Cutoff Current
(V = 50 Vdc, I = 0)
I
µAdc
CEO
100
CE
B
Collector Cutoff Current
I
CEX
(V
CE
(V
CE
= 100 Vdc, V
= 1.5 Vdc)
—
—
1.0
0.1
µAdc
mAdc
BE(off)
= 1.5 Vdc, T = 125 C)
= 50 Vdc, V
BE(off)
C
Emitter Cutoff Current (V
= 6.0 Vdc, I = 0)
I
—
1.0
µAdc
EB
C
EBO
ON CHARACTERISTICS (1)
DC Current Gain
h
FE
—
(I = 200 mAdc, V
= 3 0 Vdc)
40
20
10
5.0
250
—
—
C
CE
= 3.0 Vdc)
(I = 1.0 Adc, V
C
CE
CE
CE
(I = 2.0 Adc, V
= 3.0 Vdc)
= 3.0 Vdc)
C
(I = 4.0 Adc, V
C
—
Collector Emitter Saturation Voltage
(I = 500 mAdc, I = 50 mAdc)
V
Vdc
CE(sat)
—
—
—
—
0.5
1.0
2.5
3.0
C
B
(I = 1.0 Adc, I = 100 mAdc)
C
C
B
B
B
(I = 2.0 Adc, I = 200 mAdc)
(I = 4.0 Adc, I = 800 mAdc)
C
Base–Emitter Saturation Voltage (I = 2.0 Adc, I = 200 mAdc)
V
—
—
1.8
1.5
Vdc
Vdc
C
B
BE(sat)
Base–Emitter On Voltage (I = 200 mAdc, V
C
= 3.0 Vdc)
V
BE(on)
CE
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
f
40
—
MHz
pF
T
(I = 100 mAdc, V
C
= 10 Vdc, f = 10 MHz)
CE
Output Capacitance
C
ob
(V
CB
= 10 Vdc, I = 0, f = 0.1 MHz)
C
—
50
—
Small–Signal Current Gain
(I = 200 mAdc, V = 10 Vdc, f = 1.0 kHz)
h
10
—
fe
C
CE
* Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle
2.0%.
500
+ 30 V
V
CC
300
200
T
V
= 25°C
J
25 µs
R
= 30 V
C
CC
/I = 10
+ 11 V
0
I
C B
SCOPE
100
R
B
70
50
– 9.0 V
t , t 10 ns
51
D
1
t
r
30
20
r
f
DUTY CYCLE = 1.0%
t
@ V
= 5.0 V
– 4 V
d
BE(off)
R
AND R VARIED TO OBTAIN DESIRED CURRENT LEVELS
B
C
10
D
MUST BE FAST RECOVERY TYPE, eg
1
7.0
MBR340 USED ABOVE I
100 mA
100 mA
B
5.0
0.04
MSD6100 USED BELOW I
0.06 0.1
0.2
0.4 0.6
1.0
2.0
4.0
B
FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES.
I
, COLLECTOR CURRENT (AMP)
C
Figure 2. Switching Time Test Circuit
Figure 3. Turn–On Time
2
Motorola Bipolar Power Transistor Device Data
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.05
P
(pk)
0.1
0.07
0.05
R
R
= r(t) R
θ
θ
θ
JC(t)
= 8.34
JC
C/W MAX
°
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.02
0.01
t
1
0.03
0.02
t
2
1
(pk)
0 (SINGLE PULSE)
T
– T = P
R
J(pk)
C
θ
JC(t)
100
DUTY CYCLE, D = t /t
1 2
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
t, TIME (ms)
5.0
10
20
50
200
Figure 4. Thermal Response
10
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
100
500
µs
5.0
1.0 ms
µs
2.0
down. Safe operating area curves indicate I – V
limits of
C
CE
dc
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
1.0
0.5
T
= 150°C
J
5.0 ms
BONDING WIRE LIMITED
THERMALLY LIMITED @ T = 25°C
C
(SINGLE PULSE)
The data of Figure 5 is based on T
= 150 C: T is
C
J(pk)
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
0.1
0.05
J(pk)
may be calculated from the data in Fig-
SECOND BREAKDOWN LIMITED
150 C, T
J(pk)
CURVES APPLY BELOW RATED V
CEO
ure 4. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.02
0.01
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
Figure 5. Active Region Safe Operating Area
2000
1000
200
T
= 25°C
T
= 25°C
J
J
V
I
= 30 V
/I = 10
CC
100
700
500
C B
B1 B2
C
ib
I
= I
t
s
70
50
300
200
100
70
50
C
30
20
ob
t
f
30
20
10
1.0
2.0
3.0
5.0 7.0
10 20
30
50 70 100
0.04 0.06
0.1
0.2
0.4
0.6
1.0
2.0
4.0
V
, REVERSE VOLTAGE (VOLTS)
R
I
, COLLECTOR CURRENT (AMP)
C
Figure 7. Capacitance
Figure 6. Turn–Off Time
3
Motorola Bipolar Power Transistor Device Data
500
1.4
1.2
T
= 25°C
J
V
V
= 1.0 V
= 3.0 V
T
= 150°C
300
200
CE
CE
J
1.0
0.8
0.6
0.4
0.2
0
25°C
100
V
BE(sat)
@ I /I = 10
C B
70
50
–55°C
V
@ V
= 3.0 V
BE(on)
CE
30
20
I
/I = 10
C B
5.0
V
CE(sat)
7.0
5.0
0.04 0.06
0.04 0.06 0.1
0.2
0.4 0.6
1.0
2.0
4.0
0.1
0.2
0.4 0.6
1.0
2.0
4.0
I
, COLLECTOR CURRENT (AMP)
I
, COLLECTOR CURRENT (AMP)
C
C
Figure 9. “On” Voltage
Figure 8. DC Current Gain
+2.5
*APPLIES FOR I /I
C B
≤ h
FE/3
+2.0
+1.5
+1.0
+0.5
0
25
°
C to 150
°C
*θ
FOR V
VC CE(sat)
– 55
°C to 25
°C
–0.5
–1.0
–1.5
25°C to 150°C
θ
FOR V
0.1
VB
BE
–2.0
–2.5
– 55°C to 25°C
0.04 0.06
0.2
0.4 0.6
1.0
2.0
4.0
I
, COLLECTOR CURRENT (AMP)
C
Figure 10. Temperature Coefficient
4
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
–B–
NOTES:
F
C
U
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Q
M
INCHES
MILLIMETERS
–A–
DIM
A
B
C
D
F
MIN
MAX
0.435
0.305
0.105
0.026
0.130
MIN
10.80
7.50
2.42
0.51
2.93
MAX
11.04
7.74
2.66
0.66
3.30
1
2
3
0.425
0.295
0.095
0.020
0.115
H
K
G
H
J
K
M
Q
R
S
0.094 BSC
2.39 BSC
0.050
0.015
0.575
5
0.095
0.025
0.655
1.27
0.39
14.61
5
2.41
0.63
16.63
TYP
TYP
J
V
G
0.148
0.045
0.025
0.145
0.040
0.158
0.065
0.035
0.155
–––
3.76
1.15
0.64
3.69
1.02
4.01
1.65
0.88
3.93
–––
R
M
M
M
0.25 (0.010)
A
B
S
U
V
D 2 PL
M
M
M
0.25 (0.010)
A
B
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
CASE 77–09
TO–225AA TYPE
ISSUE W
5
Motorola Bipolar Power Transistor Device Data
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
Opportunity/Affirmative Action Employer.
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
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BD791/D
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. . . designed for low power audio amplifier and low–current
switching applications.
Features:
• High Collector–Emitter Sustaining Voltage —
V
= 100 Vdc (Min)
CEO(sus)
• High DC Current Gain @ I = 200 mAdc
C
h
= 40–250
FE
• Low Collector–Emitter Saturation Voltage —
= 0.5 Vdc (Max) @ I = 500 mAdc
V
CE(sat)
C
• High Current Gain — Bandwidth Product —
f = 40 MHz (Min) @ I = 100 mAdc)
T
C
Orderable Parts
Orderable Short Package Pin Case
Action
StatusPrice
Part
Desc. Desc.
Count Outline
N/A BD791T Zener TO-225 3
Diode
77-09 Active $0.2
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