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BC856BWQ62702-C2292 [ETC]

TRANSISTOR SOT-323 ; 晶体管SOT- 323\n
BC856BWQ62702-C2292
型号： BC856BWQ62702-C2292
厂家： ETC    ETC
描述：

TRANSISTOR SOT-323
晶体管SOT- 323\n

晶体 晶体管
文件： 总8页 (文件大小：134K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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BC 856W ... BC 860W  
PNP Silicon AF Transistors  
• For AF input stages and driver applications  
• High current gain  
3
• Low collector-emitter saturation voltage  
• Low noise between 30 Hz and 15 kHz  
• Complementary types: BC 846W, BC 847W, BC 848W  
BC 849W, BC 850W (NPN)  
2
1
VSO05561  
Type  
Marking  
3As  
3Bs  
3Es  
3Fs  
3Gs  
3Js  
3Ks  
3Ls  
4As  
4Bs  
4Cs  
4Fs  
Pin Configuration  
Package  
BC 856AW  
BC 856BW  
BC 857AW  
BC 857BW  
BC 857CW  
BC 858AW  
BC 858BW  
BC 858CW  
BC 859AW  
BC 859BW  
BC 859CW  
BC 860BW  
BC 860CW  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
2 = E  
3 = C  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
3 = C  
3 = C  
3 = C  
3 = C  
3 = C  
3 = C  
3 = C  
3 = C  
3 = C  
3 = C  
3 = C  
3 = C  
4Gs  
1
Sep-28-1999  
BC 856W ... BC 860W  
Maximum Ratings  
Parameter  
Symbol BC 856W BC 857W BC 858W Unit  
BC 860W BC 859W  
Collector-emitter voltage  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
DC collector current  
Peak collector current  
Peak base current  
65  
80  
80  
5
45  
50  
50  
30  
30  
30  
5
V
V
V
V
V
CEO  
CBO  
CES  
EBO  
V
V
mA  
mA  
5
100  
200  
200  
200  
250  
150  
-65 ... 150  
I
I
I
I
C
CM  
BM  
EM  
Peak emitter current  
mW  
°C  
Total power dissipation, T = 124 °C  
Junction temperature  
P
tot  
S
T
j
Storage temperature  
T
stg  
Thermal Resistance  
1)  
Junction ambient  
K/W  
R
≤240  
≤105  
thJA  
Junction - soldering point  
R
thJS  
Electrical Characteristics at T = 25°C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
DC Characteristics  
Collector-emitter breakdown voltage  
V
V
(BR)CEO  
(BR)CBO  
I = 10 mA, I = 0  
BC856W  
BC857/860W  
BC858/859W  
65  
45  
30  
-
-
-
-
-
-
C
B
Collector-base breakdown voltage  
V
I = 10 µA, I = 0  
BC 856W  
BC 857/860W  
BC 858/859W  
80  
50  
30  
-
-
-
-
-
-
C
B
2
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 1cm Cu  
2
Sep-28-1999  
BC 856W ... BC 860W  
Electrical Characteristics at T = 25°C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
Unit  
min.  
typ. max.  
DC Characteristics  
Collector-emitter breakdown voltage  
V
V
(BR)CES  
I = 10 µA, V = 0  
BC 856W  
BC 857/860W  
BC 858/859W  
80  
50  
30  
-
-
-
-
-
-
C
BE  
Emitter-base breakdown voltage  
5
-
-
-
-
15  
5
V
(BR)EBO  
I = 1 µA, I = 0  
E
C
Collector cutoff current  
= 30 V, I = 0  
-
nA  
µA  
-
I
CBO  
V
CB  
E
Collector cutoff current  
-
I
CBO  
V
= 30 V, I = 0 , T = 150 °C  
CB  
E
A
DC current gain 1)  
I = 10 µA, V = 5 V  
h
FE  
h -group A  
-
-
-
140  
250  
480  
-
-
-
C
CE  
FE  
h -group B  
FE  
h -group C  
FE  
DC current gain 1)  
I = 2 mA, V = 5 V  
-
h
FE  
h -group A  
125  
220  
420  
180  
290  
520  
250  
475  
800  
C
CE  
FE  
h -group B  
FE  
h -group C  
FE  
Collector-emitter saturation voltage1)  
mV  
V
CEsat  
I = 10 mA, I = 0.5 mA  
-
-
75  
250  
300  
650  
C
B
I = 100 mA, I = 5 mA  
C
B
Base-emitter saturation voltage 1)  
V
V
BEsat  
I = 10 mA, I = 0.5 mA  
-
-
700  
850  
-
-
C
B
I = 100 mA, I = 5 mA  
C
B
Base-emitter voltage 1)  
BE(ON)  
I = 2 mA, V = 5 V  
600  
-
650  
-
750  
820  
C
CE  
I = 10 mA, V = 5 V  
C
CE  
1) Pulse test: t ≤ 300µs, D = 2%  
3
Sep-28-1999  
BC 856W ... BC 860W  
Electrical Characteristics at T = 25 °C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
Unit  
min.  
typ. max.  
AC characteristics  
Transition frequency  
-
-
-
250  
3
-
5
MHz  
pF  
f
T
I = 20 mA, V = 5 V, f = 100 MHz  
C
CE  
Collector-base capacitance  
C
cb  
V
= 10 V, f = 1 MHz  
CB  
10  
15  
Emitter-base capacitance  
C
eb  
V
= 0.5 V, f = 1 MHz  
EB  
Short-circuit input impedance  
I = 2 mA, V = 5 V, f = 1 kHz  
h
kΩ  
11e  
h -gr.A  
FE  
-
-
-
2.7  
4.5  
8.7  
-
-
-
C
CE  
FE  
h -gr.B  
h -gr.C  
FE  
-4  
Open-circuit reverse voltage transf.ratio  
I = 2 mA, V = 5 V, f = 1 kHz  
FE  
10  
h
12e  
h -gr.A  
-
-
-
1.5  
2
3
-
-
-
C
CE  
h -gr.B  
FE  
h -gr.C  
FE  
Short-circuit forward current transf.ratio  
I = 2 mA, V = 5 V, f = 1 kHz  
-
h
21e  
h -gr.A  
-
-
-
200  
330  
600  
-
-
-
C
CE  
FE  
h -gr.B  
FE  
h -gr.C  
FE  
Open-circuit output admittance  
h
µS  
22e  
I = 2 mA, V = 5 V, f = 1 kHz  
h -gr.A  
-
-
-
-
18  
30  
60  
-
-
-
-
C
CE  
FE  
h -gr.B  
FE  
h -gr.C  
FE  
10  
dB  
Noise figure  
F
F
V
I = 200 µA, V = 5 V, R = 2 kΩ,  
BC 856W  
BC 857W  
BC 858W  
C
CE  
S
f = 1 kHz, ∆ f = 200 Hz  
Noise figure  
I = 200 µA, V = 5 V, R = 2 kΩ,  
C
CE  
S
f = 1 kHz, ∆ f = 200 Hz  
BC 859W  
BC 860W  
-
-
-
1
1
-
4
4
0.11 µV  
Equivalent noise voltage  
n
I = 200 µA, V = 5 V, R = 2 kΩ,  
BC 860W  
C
CE  
S
f = 10 ... 50 Hz  
4
Sep-28-1999  
BC 856W ... BC 860W  
Total power dissipation P = f (T *;T )  
Collector-base capacitance C = f (V  
)
CBO  
tot  
A
S
CB  
* Package mounted on epoxy  
Emitter-base capacitance C = f (V  
)
EB  
EBO  
EHP00376  
12 BC 856...860  
pF  
300  
mW  
CCB0  
CEB0  
(
)
10  
8
T
S
200  
CEBO  
T
A
150  
6
100  
50  
0
4
CCBO  
2
0
°C  
0
20  
40  
60  
80  
100 120  
150  
10 -1  
5
10 0  
V
101  
T ,T  
A
(
)
VCB0 VEB0  
S
Permissible pulse load  
Transition frequency f = f (I )  
T
C
P
/ P  
= f (t )  
V
= 5V  
totmax  
totDC  
p
CE  
EHP00378  
103  
EHP00377  
103  
Ptotmax  
PtotDC  
MHz  
5
t p  
5
t p  
f T  
D
=
T
T
102  
5
D
=
0
0.005  
0.01  
0.02  
0.05  
0.1  
0.2  
0.5  
102  
5
101  
5
100  
101  
10-6 10-5 10-4 10-3 10-2  
s
100  
10-1  
5
10 0  
5
101  
10 2  
mA  
t p  
Ι C  
5
Sep-28-1999  
BC 856W ... BC 860W  
Collector-emitter saturation voltage  
Collector cutoff current I  
= f (T )  
A
CBO  
I = f (V  
), h = 20  
V
= 30V  
C
CEsat  
FE  
CB  
EHP00380  
EHP00381  
10 2  
10 4  
nA  
mA  
Ι C  
ΙCB0  
10 3  
5
100 C  
25 C  
-50 C  
101  
5
max  
10 2  
5
typ  
101  
5
100  
5
100  
5
10 -1  
10 -1  
0
0
50  
100  
150  
C
0.1  
0.2  
0.3  
0.4  
V
0.5  
TA  
VCEsat  
Base-emitter saturation voltage  
DC current gain h = f (I )  
FE  
C
I = f (V  
), h = 20  
V
= 5V  
C
BEsat  
FE  
CE  
EHP00379  
EHP00382  
102  
103  
mA  
5
100 C  
25 C  
Ι C  
h FE  
100  
25  
-50  
C
C
C
-50  
C
101  
5
102  
5
101  
5
100  
5
100  
10-1  
0
10-2  
5 10 -1  
5 10 0  
5 101  
10 2  
0.2  
0.4  
0.6  
0.8  
V
1.2  
mA  
Ι C  
VBEsat  
6
Sep-28-1999  
BC 856W ... BC 860W  
h parameter h = f (I ) normalized  
h parameter h = f (V ) normalized  
e
C
e
CE  
V
= 5V  
I = 2mA  
CE  
C
BC 856...860  
EHP00383  
BC 856...860  
EHP00384  
10 2  
2.0  
1.5  
1.0  
0.5  
0
5
he  
he  
Ι
C = 2 mA  
h11  
V
CE = 5 V  
h11e  
10 1  
5
h12  
h12e  
10 0  
5
h22  
h21e  
h 22e  
10-1  
10-1  
5
10 0  
101  
0
10  
20  
V
30  
mA  
VCE  
Ι C  
Noise figure F = f (V )  
Noise figure F = f (f)  
I = 0.2mA, V = 5V, R = 2kΩ  
CE  
I = 0.2mA, R = 2kΩ, f = 1kHz  
C
S
C
CE  
S
BC 856...860  
EHP00385  
BC 856...860  
EHP00386  
20  
dB  
20  
dB  
F
F
15  
10  
5
15  
10  
5
0
0
10-1  
5
10 0  
5
101  
V
102  
10-2  
10 -1  
100  
101 kHz 10 2  
VCE  
f
7
Sep-28-1999  
BC 856W ... BC 860W  
Noise figure F = f (I )  
Noise figure F = f (I )  
C
C
V
= 5V, f = 120Hz  
V
= 5V, f = 1kHz  
CE  
CE  
BC 856...860  
EHP00388  
BC 856...860  
EHP00387  
20  
20  
dB  
dB  
F
F
15  
15  
100 k  
10 k  
Ω
Ω
RS = 1 M  
Ω
RS = 1 M  
Ω
100 k  
Ω
10 k  
Ω
10  
10  
500  
Ω
1 k  
Ω
5
0
5
0
1 k  
Ω
Ω
500  
10-3  
10-2  
10-1  
100  
101  
mA  
10-3  
10-2  
10-1  
100  
101  
mA  
Ι C  
Ι C  
Noise figure F = f (I )  
C
V
= 5V, f = 10kHz  
CE  
BC 856...860  
EHP00389  
20  
dB  
F
15  
RS = 1 M  
Ω
100 k  
10 k  
Ω
Ω
10  
500  
Ω
5
0
1 k  
Ω
10-3  
10-2  
10-1  
100  
101  
mA  
Ι C  
8
Sep-28-1999  

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