BC856BWT1 [MOTOROLA]

CASE 419-02, STYLE 3 SOT-323/SC-70; CASE 419-02 ，花柱3 SOT- 323 / SC- 70


型号：	BC856BWT1
厂家：	MOTOROLA
描述：	CASE 419-02, STYLE 3 SOT-323/SC-70 CASE 419-02 ，花柱3 SOT- 323 / SC- 70 晶体小信号双极晶体管
文件：	总8页 (文件大小：254K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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by BC856AWT1/D

SEMICONDUCTOR TECHNICAL DATA

PNP Silicon

COLLECTOR

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT–323/SC–70 which is

designed for low power surface mount applications.

Motorola Preferred Devices

BASE

EMITTER

MAXIMUM RATINGS

Rating

Symbol BC856 BC857 BC858

Unit

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

THERMAL CHARACTERISTICS

Characteristic

–65

–80

–45

–50

–30

CEO

CBO

EBO

–5.0

–100

–5.0

–100

–5.0

–100

CASE 419–02, STYLE 3

SOT–323/SC–70

mAdc

Symbol

Max

Unit

Total Device Dissipation FR–5 Board, (1)

= 25°C

150

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

DEVICE MARKING

833

°C/W

°C

T , T

J stg

–55 to +150

BC856AWT1 = 3A; BC856BWT1 = 3B; BC857AWT1 = 3E; BC857BWT1 = 3F;

BC858AWT1 = 3J; BC858BWT1 = 3K; BC858CWT1 = 3L

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I = –10 mA)

BC856 Series

BC857 Series

BC858 Series

–65

–45

–30

—

(BR)CEO

Collector–Emitter Breakdown Voltage

BC856 Series

BC857 Series

BC858 Series

–80

–50

–30

—

(BR)CES

(BR)CBO

(BR)EBO

(I = –10 µA, V

C EB

= 0)

Collector–Base Breakdown Voltage

(I = –10 A)

BC856 Series

BC857 Series

BC858 Series

–80

–50

–30

—

Emitter–Base Breakdown Voltage

(I = –1.0 A)

BC856 Series

BC857 Series

BC858 Series

–5.0

—

Collector Cutoff Current (V

= –30 V)

= –30 V, T = 150°C)

—

–15

–4.0

µA

CBO

1. FR–5 = 1.0 x 0.75 x 0.062 in

Thermal Clad is a registered trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

DC Current Gain

(I = –10 µA, V

BC856A, BC857A, BC585A

BC856A, BC857A, BC858A

BC858C

—

150

270

—

= –5.0 V)

(I = –2.0 mA, V

C CE

= –5.0 V) BC856A, BC857A, BC858A

BC856B, BC857B, BC858B

BC858C

125

220

420

180

290

520

250

475

800

Collector–Emitter Saturation Voltage

(I = –10 mA, I = –0.5 mA)

CE(sat)

—

–0.3

–0.65

(I = –100 mA, I = –5.0 mA)

Base–Emitter Saturation Voltage

(I = –10 mA, I = –0.5 mA)

BE(sat)

—

–0.7

–0.9

—

(I = –100 mA, I = –5.0 mA)

Base–Emitter On Voltage

BE(on)

(I = –2.0 mA, V

(I = –10 mA, V

= –5.0 V)

–0.6

—

–0.75

–0.82

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

100

—

4.5

MHz

(I = –10 mA, V

C CE

= –5.0 Vdc, f = 100 MHz)

Output Capacitance

(V = –10 V, f = 1.0 MHz)

Noise Figure

(I = –0.2 mA, V

—

= –5.0 Vdc, R = 2.0 kΩ,

f = 1.0 kHz, BW = 200 Hz)

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC857/BC858

2.0

1.5

–1.0

–0.9

= 25°C

= –10 V

= 25

@ I /I = 10

C B

BE(sat)

°C

–0.8

–0.7

–0.6

–0.5

–0.4

–0.3

–0.2

–0.1

1.0

0.7

0.5

@ V = –10 V

BE(on)

0.3

0.2

@ I /I = 10

C B

CE(sat)

–0.2

–0.5 –1.0 –2.0

–5.0 –10 –20

–50 –100 –200

–0.1

–1.0

I , COLLECTOR CURRENT (mAdc)

–10

–100

–0.2

–0.5

–2.0

–5.0

–20

–50

, COLLECTOR CURRENT (mAdc)

Figure 1. Normalized DC Current Gain

Figure 2. “Saturation” and “On” Voltages

1.0

–2.0

–1.6

–1.2

–0.8

–0.4

–55°C to +125°C

= 25°C

1.2

1.6

2.0

2.4

2.8

= –50 mA

= –200 mA

= –100 mA

–10 mA

= –20 mA

–0.02

–0.1

–1.0

, BASE CURRENT (mA)

–10 –20

–0.2

–1.0

I , COLLECTOR CURRENT (mA)

–10

–100

Figure 3. Collector Saturation Region

Figure 4. Base–Emitter Temperature Coefficient

400

300

7.0

= 25°C

200

150

5.0

= –10 V

= 25°C

100

3.0

2.0

1.0

–0.6

–1.0

–2.0

–4.0 –6.0

–10

–20 –30 –40

–1.0

–2.0 –3.0

I , COLLECTOR CURRENT (mAdc)

–5.0

–10

–20 –30

–50

–0.4

–0.5

, REVERSE VOLTAGE (VOLTS)

Figure 5. Capacitances

Figure 6. Current–Gain – Bandwidth Product

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC856

–1.0

–0.8

–0.6

= 25°C

= –5.0 V

= 25°C

@ I /I = 10

C B

BE(sat)

2.0

1.0

0.5

@ V

= –5.0 V

–0.4

–0.2

0.2

@ I /I = 10

C B

CE(sat)

–0.1 –0.2

–1.0 –2.0

–10 –20

–100 –200

–50

–0.2

–0.5 –1.0 –2.0

–5.0 –10 –20

–50 –100 –200

–5.0

, COLLECTOR CURRENT (AMP)

I , COLLECTOR CURRENT (mA)

Figure 7. DC Current Gain

Figure 8. “On” Voltage

–2.0

–1.6

–1.2

–0.8

–0.4

–1.0

–1.4

–1.8

–2.2

–2.6

–3.0

–100 mA –200 mA

–20 mA

–50 mA

–10 mA

for V

–55

C to 125

= 25°C

–0.02 –0.05 –0.1 –0.2

–0.5 –1.0 –2.0

–5.0 –10 –20

–0.2

–0.5 –1.0 –2.0

–5.0 –10 –20

–50 –100 –200

, BASE CURRENT (mA)

I , COLLECTOR CURRENT (mA)

Figure 9. Collector Saturation Region

Figure 10. Base–Emitter Temperature Coefficient

= –5.0 V

500

= 25°C

200

100

8.0

6.0

4.0

2.0

–0.1 –0.2

–0.5 –1.0 –2.0

–5.0

–10 –20

–50 –100

–1.0

–10

I , COLLECTOR CURRENT (mA)

–100

, REVERSE VOLTAGE (VOLTS)

Figure 11. Capacitance

Figure 12. Current–Gain – Bandwidth Product

Motorola Small–Signal Transistors, FETs and Diodes Device Data

1.0

0.7

0.5

D = 0.5

0.2

0.3

0.2

SINGLE PULSE

0.05

(t) = r(t) R

0.1

C/W MAX

(t) = r(t) R

0.1

0.07

0.05

= 83.3°

(pk)

SINGLE PULSE

= 200°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

0.03

0.02

DUTY CYCLE, D = t /t

1 2

READ TIME AT t

– T = P

R (t)

θJC

J(pk)

(pk)

0.01

0.1

0.2

0.5

1.0

2.0

5.0

100

200

500

1.0 k

2.0 k

5.0 k

10 k

t, TIME (ms)

Figure 13. Thermal Response

–200

1 s

3 ms

–100

–50

The safe operating area curves indicate I –V

limits of the

transistor that must be observed for reliable operation. Collector load

lines for specific circuits must fall below the limits indicated by the

applicable curve.

= 25°C

The data of Figure 14 is based upon T

= 150°C; T or T is

C A

J(pk)

variable depending upon conditions. Pulse curves are valid for duty

cyclesto10%providedT ≤ 150°C. T maybecalculatedfrom

BC558

BC557

BC556

J(pk)

–10

the data in Figure 13. At high case or ambient temperatures, thermal

limitations will reduce the power that can be handled to values less

than the limitations imposed by the secondary breakdown.

–5.0

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

–2.0

–1.0

–5.0

–10

–30 –45 –65 –100

, COLLECTOR–EMITTER VOLTAGE (V)

Figure 14. Active Region Safe Operating Area

Motorola Small–Signal Transistors, FETs and Diodes Device Data

INFORMATION FOR USING THE SOT–323/SC–70 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total

design. The footprint for the semiconductor packages must

be the correct size to insure proper solder connection

interface between the board and the package. With the

correct pad geometry, the packages will self align when

subjected to a solder reflow process.

0.025

0.65

0.025

0.65

0.075

1.9

0.035

0.9

0.028

0.7

inches

SOT–323/SC–70

SOT–323/SC–70 POWER DISSIPATION

The power dissipation of the SOT–323/SC–70 is a function

SOLDERING PRECAUTIONS

of the pad size. This can vary from the minimum pad size for

soldering to a pad size given for maximum power dissipation.

Power dissipation for a surface mount device is determined

The melting temperature of solder is higher than the rated

temperature of the device. When the entire device is heated

to a high temperature, failure to complete soldering within a

short time could result in device failure. Therefore, the

following items should always be observed in order to

minimize the thermal stress to which the devices are

subjected.

by T

, the maximum rated junction temperature of the

, the thermal resistance from the device junction to

J(max)

die, R

θJA

ambient, and the operating temperature, T . Using the

values provided on the data sheet for the SOT–323/SC–70

package, P can be calculated as follows:

•

Always preheat the device.

The delta temperature between the preheat and

soldering should be 100°C or less.*

– T

J(max)

θJA

•

When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum

temperature ratings as shown on the data sheet. When

using infrared heating with the reflow soldering method,

the difference shall be a maximum of 10°C.

The values for the equation are found in the maximum

ratings table on the data sheet. Substituting these values into

the equation for an ambient temperature T of 25°C, one can

calculate the power dissipation of the device which in this

case is 150 milliwatts.

•

The soldering temperature and time shall not exceed

260°C for more than 10 seconds.

When shifting from preheating to soldering, the

maximum temperature gradient shall be 5°C or less.

After soldering has been completed, the device should

be allowed to cool naturally for at least three minutes.

Gradual cooling should be used as the use of forced

cooling will increase the temperature gradient and result

in latent failure due to mechanical stress.

150°C – 25°C

833°C/W

= 150 milliwatts

The 833°C/W for the SOT–323/SC–70 package assumes

the use of the recommended footprint on a glass epoxy

printed circuit board to achieve a power dissipation of

150 milliwatts. There are other alternatives to achieving

higher power dissipation from the SOT–323/SC–70

package. Another alternative would be to use a ceramic

substrate or an aluminum core board such as Thermal

Clad . Using a board material such as Thermal Clad, an

aluminum core board, the power dissipation can be doubled

using the same footprint.

•

Mechanical stress or shock should not be applied during

cooling.

* Soldering a device without preheating can cause excessive

thermal shock and stress which can result in damage to the

device.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

INCHES

MILLIMETERS

DIM

MIN

MAX

0.087

0.053

0.049

0.016

0.055

0.004

0.010

MIN

1.80

1.15

0.90

0.30

1.20

0.00

0.10

MAX

2.20

1.35

1.25

0.40

1.40

0.10

0.25

0.071

0.045

0.035

0.012

0.047

0.000

0.004

0.017 REF

0.026 BSC

0.028 REF

0.425 REF

0.650 BSC

0.700 REF

0.031

0.079

0.012

0.039

0.087

0.016

0.80

2.00

0.30

1.00

2.20

0.40

0.05 (0.002)

STYLE 3:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

CASE 419–02

ISSUE G

SOT–323/SC–70

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different

applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does

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the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such

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against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.

Motorola and

are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

USA/EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,

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51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC856AWT1/D

◊

BC856BWT1 [MOTOROLA]

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