BC856BWT3_技术文档

BC856BDW1T1G,

SBC856BDW1T1GꢀSeries,

BC857BDW1T1G,

SBC857BDW1T1GꢀSeries,

BC858CDW1T1G Series

http://onsemi.com

Dual General Purpose

Transistors

PNP Duals

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT−363/SC−88 which is

designed for low power surface mount applications.

SOT−363/SC−88

CASE 419B

STYLE 1

(3)

(2)

(1)

Q

Features

• S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

Q

1

2

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant*

(4)

(5)

(6)

MAXIMUM RATINGS

MARKING DIAGRAM

Rating

Symbol

Value

Unit

6

Collector−Emitter Voltage

BC856, SBC856

BC857, SBC857

BC858

V

CEO

CBO

EBO

−65

−45

−30

3x MG

G

1

Collector−Base Voltage

BC856, SBC856

BC857, SBC857

BC858

V

−80

−50

−30

3x = Specific Device Code

x = B, F, G, or L

Emitter−Base Voltage

−5.0

−100

−200

V

(See Ordering Information)

= Date Code

= Pb−Free Package

M

G

Collector Current −Continuous

Collector Current − Peak

I

mAdc

C

(Note: Microdot may be in either location)

THERMAL CHARACTERISTICS

Characteristic

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

Symbol

Max

Unit

Total Device Dissipation Per Device

P

D

FR−5 Board (Note 1)

380

250

3.0

mW

mW/°C

T = 25°C

A

Derate Above 25°C

Thermal Resistance,

Junction−to−Ambient

R

°C/W

q

JA

328

Junction and Storage Temperature

Range

T , T

−55 to +150

°C

J

stg

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0 x 0.75 x 0.062 in

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

1

Publication Order Number:

June, 2013 − Rev. 9

BC856BDW1T1/D

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G,

SBC857BDW1T1G Series, BC858CDW1T1G Series

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

A

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

V

(BR)CEO

(I = −10 mA)

C

BC856, SBC856 Series

BC857, SBC857 Series

BC858 Series

−65

−45

−30

−

Collector−Emitter Breakdown Voltage

V

(BR)CES

(BR)CBO

(BR)EBO

(I = −10 mA, V = 0)

C

EB

BC856, SBC856 Series

BC857B, SBC857B Only

BC858 Series

−80

−50

−30

−

Collector−Base Breakdown Voltage

V

(I = −10 mA)

C

BC856, SBC856 Series

BC857, SBC857 Series

BC858 Series

−80

−50

−30

−

Emitter−Base Breakdown Voltage

(I = −1.0 mA)

E

BC856, SBC856 Series

BC857, SBC857 Series

BC858 Series

−5.0

−

Collector Cutoff Current

I

CBO

(V = −30 V)

−

−15

−4.0

nA

mA

CB

(V = −30 V, T = 150°C)

CB

A

ON CHARACTERISTICS

DC Current Gain

h

FE

−

(I = −10 mA, V = −5.0 V)

C

CE

BC856B, SBC856B, BC857B, SBC857B

BC857C, SBC857C, BC858C

−

150

270

−

(I = −2.0 mA, V = −5.0 V)

C

CE

BC856B, SBC856B, BC857B, SBC857B

BC857C, SBC857C, BC858C

220

420

290

520

475

800

Collector−Emitter Saturation Voltage

V

CE(sat)

(I = −10 mA, I = −0.5 mA)

−

−0.3

C

B

(I = −100 mA, I = −5.0 mA)

−0.65

C

B

Base−Emitter Saturation Voltage

(I = −10 mA, I = −0.5 mA)

V

BE(sat)

−

−0.7

−0.9

−

C

B

(I = −100 mA, I = −5.0 mA)

C

B

Base−Emitter On Voltage

(I = −2.0 mA, V = −5.0 V)

V

BE(on)

−0.6

−

−0.75

−0.82

C

CE

(I = −10 mA, V = −5.0 V)

C

CE

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

f

MHz

pF

T

(I = −10 mA, V = −5.0 Vdc, f = 100 MHz)

100

−

C

CE

Output Capacitance

C

ob

(V = −10 V, f = 1.0 MHz)

4.5

10

CB

Noise Figure

NF

dB

(I = −0.2 mA, V = −5.0 Vdc, R = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)

−

C

CE

S

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2

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G,

SBC857BDW1T1G Series, BC858CDW1T1G Series

TYPICAL CHARACTERISTICS − BC856/SBC856

-1.0

T = 25°C

J

V

= -5.0 V

CE

T = 25°C

-0.8

-0.6

A

V

@ I /I = 10

C B

BE(sat)

2.0

1.0

0.5

V

@ V = -5.0 V

CE

BE

-0.4

-0.2

0

0.2

V

@ I /I = 10

C B

CE(sat)

-0.1 -0.2

-1.0 -2.0

-10 -20

-100 -200

-50

-0.2 -0.5 -1.0 -2.0

-5.0 -10 -20

-50 -100 -200

-5.0

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 1. DC Current Gain

Figure 2. “On” Voltage

-2.0

-1.6

-1.2

-0.8

-0.4

0

-1.0

-1.4

-1.8

-2.2

-2.6

-3.0

-100 mA -200 mA

I =

C

-10 mA

-20 mA

-50 mA

q

for V

BE

VB

-55°C to 125°C

T = 25°C

J

-0.02 -0.05 -0.1 -0.2

-0.5 -1.0 -2.0

-5.0 -10 -20

-0.2 -0.5 -1.0 -2.0

-5.0 -10 -20

-50 -100 -200

I , BASE CURRENT (mA)

B

I , COLLECTOR CURRENT (mA)

C

Figure 3. Collector Saturation Region

Figure 4. Base−Emitter Temperature Coefficient

40

20

V

CE

= -5.0 V

500

T = 25°C

J

C

ib

200

100

50

10

8.0

6.0

4.0

C

ob

20

2.0

-0.1 -0.2

-0.5 -1.0 -2.0

-5.0 -10 -20

-50 -100

-1.0

-10

-100

V , REVERSE VOLTAGE (VOLTS)

R

I , COLLECTOR CURRENT (mA)

C

Figure 5. Capacitance

Figure 6. Current−Gain − Bandwidth Product

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3

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G,

SBC857BDW1T1G Series, BC858CDW1T1G Series

TYPICAL CHARACTERISTICS − BC857/SBC857/BC858

2.0

1.5

-1.0

T = 25°C

-0.9

-0.8

-0.7

-0.6

-0.5

-0.4

-0.3

-0.2

-0.1

0

A

V

= -10 V

CE

T = 25°C

V

@ I /I = 10

C B

BE(sat)

A

1.0

0.7

0.5

V

BE(on)

@ V = -10 V

CE

0.3

0.2

V

@ I /I = 10

C B

CE(sat)

-0.2

-0.5 -1.0 -2.0

-5.0 -10 -20

-50 -100 -200

-0.1

-1.0

-10

-100

-0.2

-0.5

-2.0

-5.0

-20

-50

I , COLLECTOR CURRENT (mAdc)

C

I , COLLECTOR CURRENT (mAdc)

C

Figure 7. Normalized DC Current Gain

Figure 8. “Saturation” and “On” Voltages

1.0

1.2

1.6

2.0

2.4

2.8

-2.0

-1.6

-1.2

-0.8

-0.4

0

-55°C to +125°C

T = 25°C

A

I =

C

-10 mA

I = -50 mA

C

I = -200 mA

C

I = -100 mA

C

I = -20 mA

C

-0.02

-0.1

-1.0

-10 -20

-0.2

-1.0

-10

-100

I , BASE CURRENT (mA)

B

I , COLLECTOR CURRENT (mA)

C

Figure 9. Collector Saturation Region

Figure 10. Base−Emitter Temperature

Coefficient

10

7.0

5.0

400

300

C

ib

T = 25°C

A

200

150

V

= -10 V

CE

T = 25°C

A

100

80

C

ob

3.0

2.0

60

40

30

1.0

-0.4

20

-0.5

-0.6 -1.0

-2.0

-4.0 -6.0

-10

-20 -30 -40

-1.0

-2.0 -3.0 -5.0

-10

-20 -30 -50

V , REVERSE VOLTAGE (VOLTS)

R

I , COLLECTOR CURRENT (mAdc)

C

Figure 11. Capacitances

Figure 12. Current−Gain − Bandwidth Product

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4

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G,

SBC857BDW1T1G Series, BC858CDW1T1G Series

1.0

0.1

D = 0.5

0.2

0.1

0.05

0.02

Z

(t) = r(t) R

q

JA

q

JA

P

(pk)

R

= 328°C/W MAX

q

JA

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

t

1

0.01

READ TIME AT t

1

t

2

T

− T = P

R (t)

q

JC

J(pk)

C

(pk)

DUTY CYCLE, D = t /t

1

2

SINGLE PULSE

0.001

0

1.0

10

100

1.0ꢁk

10ꢁk

100ꢁk

1.0ꢁM

t, TIME (ms)

Figure 13. Thermal Response

-200

The safe operating area curves indicate I −V limits

C

CE

1 s

3 ms

of the transistor that must be observed for reliable operation.

Collector load lines for specific circuits must fall below the

limits indicated by the applicable curve.

-100

-50

T = 25°C

A

J

The data of Figure 14 is based upon T

= 150°C; T

J(pk)

C

or T is variable depending upon conditions. Pulse curves

A

are valid for duty cycles to 10% provided T

≤ 150°C.

BC558

BC557

BC556

J(pk)

T

may be calculated from the data in Figure 13. At high

J(pk)

-10

case or ambient temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by the secondary breakdown.

-5.0

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

-2.0

-1.0

-5.0

-10

-30 -45 -65 -100

V

CE

, COLLECTOR-EMITTER VOLTAGE (V)

Figure 14. Active Region Safe Operating Area

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5

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G,

SBC857BDW1T1G Series, BC858CDW1T1G Series

ORDERING INFORMATION

†

Device

Device Marking

Package

Shipping

BC856BDW1T1G

3B

SOT−363

(Pb−Free)

3,000 / Tape & Reel

10,000 / Tape & Reel

3,000 / Tape & Reel

SBC856BDW1T1G

BC856BDW1T3G

SBC856BDW1T3G

BC857BDW1T1G

SBC857BDW1T1G

BC857CDW1T1G

SBC857CDW1T1G

BC858CDW1T1G

3B

3F

3G

3L

SOT−363

(Pb−Free)

SOT−363

(Pb−Free)

SOT−363

(Pb−Free)

SOT−363

(Pb−Free)

SOT−363

(Pb−Free)

SOT−363

(Pb−Free)

SOT−363

(Pb−Free)

SOT−363

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

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6

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G,

SBC857BDW1T1G Series, BC858CDW1T1G Series

PACKAGE DIMENSIONS

SC−88/SC70−6/SOT−363

CASE 419B−02

D

ISSUE W

NOTES:

e

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.

6

1

5

2

4

3

MILLIMETERS

DIM MIN NOM MAX

0.80

INCHES

NOM MAX

1.10 0.031 0.037 0.043

0.10 0.000 0.002 0.004

0.008 REF

MIN

H

−E−

E

A

0.95

0.05

A1 0.00

A3

0.20 REF

b

C

D

E

e

0.10

1.80

1.15

0.21

0.14

2.00

1.25

0.65 BSC

0.20

2.10

0.30 0.004 0.008 0.012

0.25 0.004 0.005 0.010

2.20 0.070 0.078 0.086

1.35 0.045 0.049 0.053

0.026 BSC

0.30 0.004 0.008 0.012

2.20 0.078 0.082 0.086

b 6 PL

M

E

0.2 (0.008)

L

0.10

2.00

H

E

A3

STYLE 1:

PIN 1. EMITTER 2

2. BASE 2

C

3. COLLECTOR 1

4. EMITTER 1

5. BASE 1

A

6. COLLECTOR 2

A1

L

SOLDERING FOOTPRINT*

0.50

0.0197

0.65

0.025

0.65

0.025

0.40

0.0157

1.9

0.0748

mm

inches

ǒ

Ǔ

SCALE 20:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

For additional information, please contact your local

Sales Representative

BC856BDW1T1/D

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7


型号：	BC856BWT3
厂家：	ONSEMI
描述：	100mA, 65V, PNP, Si, SMALL SIGNAL TRANSISTOR, SC-70, 3 PIN 放大器光电二极管晶体管
文件：	总7页 (文件大小：116K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BC856BWT3 [ONSEMI]

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