BC856BWT1G [ONSEMI]
General Purpose Transistors; 通用晶体管
| 型号： | BC856BWT1G |
| 厂家： | 
ONSEMI |
| 描述： | General Purpose Transistors |
| 文件： | 总6页 (文件大小：194K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC856BWT1,
SBC856BWT1 Series,
BC857BWT1,
SBC857BWT1 Series,
BC858AWT1 Series
http://onsemi.com
General Purpose
Transistors
COLLECTOR
3
PNP Silicon
1
BASE
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−70/SOT−323 which is
designed for low power surface mount applications.
2
EMITTER
Features
3
• AEC−Q101 Qualified and PPAP Capable
SC−70/SOT−323
• S Prefix for Automotive and Other Applications Requiring Unique
CASE 419
STYLE 3
1
Site and Control Change Requirements
2
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MARKING DIAGRAM
xx M G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
G
Rating
Symbol
Value
Unit
1
Collector-Emitter Voltage
V
CEO
V
CBO
V
EBO
V
BC856, SBC856
BC857, SBC857
BC858
−65
−45
−30
xx = Specific Device Code
M
G
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
Collector-Base Voltage
V
BC856, SBC856
BC857, SBC857
BC858
−80
−50
−30
Emitter−Base Voltage
−5.0
V
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Collector Current − Continuous
THERMAL CHARACTERISTICS
Characteristic
I
−100
mAdc
C
Symbol
Max
Unit
Total Device Dissipation FR−5 Board,
P
D
150
mW
(Note 1) T = 25°C
A
Thermal Resistance,
Junction−to−Ambient
R
883
°C/W
°C
q
JA
Junction and Storage Temperature
T , T
J
−55 to +150
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
November, 2011 − Rev. 3
BC856BWT1/D
BC856BWT1, SBC856BWT1 Series, BC857BWT1, SBC857BWT1 Series, BC858AWT1
Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I = −10 mA)
C
BC856, SBC856 Series
BC857, SBC857 Series
BC858 Series
V
−65
−45
−30
−
−
−
−
−
−
V
(BR)CEO
Collector−Emitter Breakdown Voltage
BC856, SBC856 Series
BC857B, SBC857B Only
BC858 Series
V
−80
−50
−30
−
−
−
−
−
−
V
V
V
(BR)CES
(BR)CBO
(BR)EBO
(I = −10 mA, V = 0)
C
EB
Collector−Base Breakdown Voltage
(I = −10 mA)
C
BC856, SBC856 Series
BC857, SBC857 Series
BC858 Series
V
V
−80
−50
−30
−
−
−
−
−
−
Emitter−Base Breakdown Voltage
(I = −1.0 mA)
E
BC856, SBC856 Series
BC857, SBC857 Series
BC858 Series
−5.0
−5.0
−5.0
−
−
−
−
−
−
Collector Cutoff Current (V = −30 V)
I
−
−
−
−
−15
−4.0
nA
mA
CB
CBO
Collector Cutoff Current (V = −30 V, T = 150°C)
CB
A
ON CHARACTERISTICS
DC Current Gain
(I = −10 mA, V = −5.0 V)
C
BC856A, BC585A
BC856B, SBC856B, BC857B,
h
FE
−
−
90
150
−
−
−
CE
SBC857B BC858B
BC857C
−
270
−
(I = −2.0 mA, V = −5.0 V)
BC856A, BC858A
BC856B, SBC856B, BC857B,
125
220
180
290
250
475
C
CE
SBC857B, BC858B
BC857C
420
520
800
Collector−Emitter Saturation Voltage
(I = −10 mA, I = −0.5 mA)
V
V
V
V
CE(sat)
−
−
−
−
−0.3
−0.65
C
B
(I = −100 mA, I = −5.0 mA)
C
B
Base−Emitter Saturation Voltage
(I = −10 mA, I = −0.5 mA)
V
BE(sat)
−
−
−0.7
−0.9
−
−
C
B
(I = −100 mA, I = −5.0 mA)
C
B
Base−Emitter On Voltage
(I = −2.0 mA, V = −5.0 V)
V
BE(on)
−0.6
−
−
−
−0.75
−0.82
C
CE
(I = −10 mA, V = −5.0 V)
C
CE
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
100
−
−
−
−
−
MHz
pF
T
(I = −10 mA, V = −5.0 Vdc, f = 100 MHz)
C
CE
Output Capacitance
(V = −10 V, f = 1.0 MHz)
CB
C
4.5
10
ob
Noise Figure
NF
−
dB
(I = −0.2 mA, V = −5.0 Vdc, R = 2.0 kW,
C
CE
S
f = 1.0 kHz, BW = 200 Hz)
http://onsemi.com
2
BC856BWT1, SBC856BWT1 Series, BC857BWT1, SBC857BWT1 Series, BC858AWT1
Series
BC857/SBC847/BC858
2.0
1.5
-1.0
-0.9
T = 25°C
A
V
= -10 V
CE
T = 25°C
V
@ I /I = 10
C B
BE(sat)
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
A
1.0
0.7
0.5
V
BE(on)
@ V = -10 V
CE
0.3
0.2
V
@ I /I = 10
C B
CE(sat)
-0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100 -200
-0.1
-1.0
-10
-100
-0.2
-0.5
-2.0
-5.0
-20
-50
I , COLLECTOR CURRENT (mAdc)
C
I , COLLECTOR CURRENT (mAdc)
C
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
1.0
1.2
1.6
2.0
2.4
2.8
-2.0
-1.6
-1.2
-0.8
-0.4
0
-55°C to +125°C
T = 25°C
A
I
=
I
= -50 mA
I
C
= -200 mA
= -100 mA
C
-10 mA
C
I
C
I
= -20 mA
C
-0.02
-0.1
-1.0
-10 -20
-0.2
-1.0
-10
-100
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 3. Collector Saturation Region
Figure 4. Base−Emitter Temperature Coefficient
10
7.0
5.0
400
300
C
ib
T = 25°C
A
200
150
V
= -10 V
CE
T = 25°C
A
100
80
C
ob
3.0
2.0
60
40
30
1.0
-0.4
20
-0.5
-0.6 -1.0
-2.0
-4.0 -6.0
-10
-20 -30 -40
-1.0
-2.0 -3.0 -5.0
-10
-20 -30 -50
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mAdc)
C
Figure 5. Capacitances
Figure 6. Current−Gain − Bandwidth Product
http://onsemi.com
3
BC856BWT1, SBC856BWT1 Series, BC857BWT1, SBC857BWT1 Series, BC858AWT1
Series
BC856/SBC856
-1.0
T = 25°C
J
V
= -5.0 V
CE
T = 25°C
-0.8
-0.6
A
V
@ I /I = 10
C B
BE(sat)
2.0
1.0
0.5
V
@ V = -5.0 V
CE
BE
-0.4
-0.2
0
0.2
V
@ I /I = 10
C B
CE(sat)
-0.1 -0.2
-1.0 -2.0
-10 -20
-100 -200
-50
-0.2 -0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100 -200
-5.0
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. DC Current Gain
Figure 8. “On” Voltage
-2.0
-1.6
-1.2
-0.8
-0.4
0
-1.0
-1.4
-1.8
-2.2
-2.6
-3.0
-100 mA -200 mA
I
=
-20 mA
-50 mA
C
-10 mA
q
for V
BE
VB
-55°C to 125°C
T = 25°C
J
-0.02 -0.05 -0.1 -0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-0.2 -0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100 -200
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 9. Collector Saturation Region
Figure 10. Base−Emitter Temperature Coefficient
40
20
V
CE
= -5.0 V
500
T = 25°C
J
C
ib
200
100
50
10
8.0
6.0
4.0
C
ob
20
2.0
-0.1 -0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100
-1.0
-10
-100
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mA)
C
Figure 11. Capacitance
Figure 12. Current−Gain − Bandwidth Product
http://onsemi.com
4
BC856BWT1, SBC856BWT1 Series, BC857BWT1, SBC857BWT1 Series, BC858AWT1
Series
1.0
0.7
D = 0.5
0.5
0.2
0.3
0.2
SINGLE PULSE
0.05
Z
q
(t) = r(t) R
q
JC
JC
0.1
R
Z
= 83.3°C/W MAX
q
JC
0.1
0.07
0.05
P
(pk)
(t) = r(t) R
q
q
JA
JA
SINGLE PULSE
R
q
= 200°C/W MAX
JA
t
1
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
t
2
0.03
0.02
DUTY CYCLE, D = t /t
1 2
T
J(pk)
− T = P
R
q
JC
(t)
C
(pk)
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0ꢁk
2.0ꢁk
5.0ꢁk 10ꢁk
t, TIME (ms)
Figure 13. Thermal Response
The safe operating area curves indicate I −V lim-
-200
C
CE
1 s
3 ms
its of the transistor that must be observed for reliable oper-
ation. Collector load lines for specific circuits must fall
below the limits indicated by the applicable curve.
-100
-50
T = 25°C
T = 25°C
A
J
The data of Figure 14 is based upon T
= 150°C; T
J(pk)
C
or T is variable depending upon conditions. Pulse curves
A
are valid for duty cycles to 10% provided T
≤ 150°C.
J(pk)
BC858
BC857
BC856
T
may be calculated from the data in Figure 13. At
J(pk)
-10
high case or ambient temperatures, thermal limitations
will reduce the power that can be handled to values less
than the limitations imposed by the secondary breakdown.
-5.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-2.0
-1.0
-5.0
-10
-30 -45 -65 -100
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
ORDERING INFORMATION
Device
†
Marking
Package
Shipping
BC856BWT1G
SC−70/SOT−323
(Pb−Free)
3B
3,000 / Tape & Reel
SBC856BWT1G
BC857BWT1G
SC−70/SOT−323
(Pb−Free)
3F
3,000 / Tape & Reel
SBC857BWT1G
BC857CWT1G
SC−70/SOT−323
(Pb−Free)
3G
3J
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
BC858AWT1G
BC858BWT1G
SC−70/SOT−323
(Pb−Free)
SC−70/SOT−323
(Pb−Free)
3K
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
BC856BWT1, SBC856BWT1 Series, BC857BWT1, SBC857BWT1 Series, BC858AWT1
Series
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
e1
MILLIMETERS
INCHES
DIM
A
A1
A2
b
c
D
E
e
e1
L
MIN
0.80
0.00
NOM
0.90
0.05
0.70 REF
0.35
0.18
2.10
1.24
1.30
0.65 BSC
0.38
MAX
1.00
0.10
MIN
0.032
0.000
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
MAX
0.040
0.004
3
E
H
E
1
2
0.30
0.10
1.80
1.15
1.20
0.40
0.25
2.20
1.35
1.40
0.012
0.004
0.071
0.045
0.047
0.016
0.010
0.087
0.053
0.055
b
e
0.20
2.00
0.56
2.40
0.008
0.079
0.022
0.095
H
2.10
0.083
E
STYLE 3:
c
PIN 1. BASE
2. EMITTER
3. COLLECTOR
A
A2
0.05 (0.002)
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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BC856BWT1/D
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