40EPS..SERIES [ETC]
INPUT RECTIFIER DIODE ; 输入整流二极管\n型号: | 40EPS..SERIES |
厂家: | ETC |
描述: | INPUT RECTIFIER DIODE
|
文件: | 总5页 (文件大小:126K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Bulletin I2104A
40EPS.. SERIES
INPUT RECTIFIER DIODE
VF < 1V @ 20A
IFSM = 475A
Description/Features
VRRM 800 to 1600V
The 40EPS rectifier series has been optimized for
very low forward voltage drop with moderate
leakage. The glass passivation technology used
operatesreliablyupto150°Cjunctiontemperature.
Typical applications are in input rectification, and
these products are designed to be used with
International Rectifier switches and output
rectifiers which are available in identical package
outlines.
Output Current in Typical Applications
Single-phase Bridge Three-phase Bridge Units
CapacitiveinputfilterTA=55°C, TJ=125°C,
common heatsink of 1°C/W
21.3
27.3
A
Major Ratings and Characteristics
Characteristics
40EPS.. Units
I
Sinusoidal
waveform
40
A
F(AV)
V
800to1600
475
V
A
RRM
I
FSM
V @20A, T =25°C
1.0
V
F
J
T
J
-40to150
°C
TO-247AC (Modified)
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40EPS.. Series
Voltage Ratings
VRRM , maximum
peak reverse voltage
V
VRSM , maximum non repetitive
IRRM
150°C
mA
peak reverse voltage
V
Part Number
40EPS08
40EPS12
40EPS16
800
1200
1600
900
1300
1700
1
Absolute Maximum Ratings
Parameters
40EPS.. Units
Conditions
IF(AV) Max. AverageForwardCurrent
40
A
@ TC =105°C,180°conductionhalfsinewave
IFSM Max.PeakOneCycleNon-Repetitive
SurgeCurrent
400
475
10msSinepulse, ratedVRRMapplied
10msSine pulse,novoltagereapplied
A
I2t
Max.I2tforfusing
800
1131
8000
10msSinepulse, ratedVRRMapplied
10msSinepulse,novoltagereapplied
t=0.1to10ms,novoltagereapplied
A2s
I2√t Max.I2√tforfusing
A2√s
Electrical Specifications
Parameters
40EPS.. Units
Conditions
VFM Max. Forward Voltage Drop
1.1
7.16
0.74
0.1
V
mΩ
V
@ 40A, TJ = 25°C
rt
Forward slope resistance
TJ = 150°C
VF(TO) Threshold voltage
IRM Max. Reverse Leakage Current
TJ = 25 °C
mA
VR = rated VRRM
1.0
TJ = 150 °C
Thermal-Mechanical Specifications
Parameters
40EPS.. Units
Conditions
TJ
Max. JunctionTemperatureRange
-40to150
-40to150
0.6
°C
°C
Tstg Max. StorageTemperatureRange
RthJC Max. ThermalResistanceJunction
toCase
°C/W
DC operation
RthJA Max. ThermalResistanceJunction
toAmbient
40
°C/W
°C/W
g(oz.)
RthCS TypicalThermalResistance, Caseto
Heatsink
0.2
Mountingsurface, smoothandgreased
wt
T
Approximate Weight
Mounting Torque
6(0.21)
6(5)
Min.
Kg-cm
(Ibf-in)
Max.
12(10)
CaseStyle
TO-247AC
JEDEC (Modified)
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40EPS.. Series
150
145
140
135
130
125
120
115
110
105
100
95
150
140
130
120
110
100
40EPS.. Series
40EPS.. Series
R (DC) = 0.6 K/W
thJC
R
(DC) = 0.6 K/W
thJC
Co nd uc tio n Pe riod
Co nd uc tion Angle
30°
30°
60°
60°
20
90°
90°
120°
180°
120°
180°
DC
0
10
30
40
50
60
70
0
5
10 15 20 25 30 35 40 45
Avera ge Forwa rd Current (A)
Avera ge Forwa rd Current (A)
Fig. 1 - Current Rating Char-
a c t e r i s t i c s
Fig. 2 - Current Rating Charac-
t e r i s t i c s
80
70
60
50
40
30
20
10
0
60
55
50
45
40
35
30
25
20
15
10
5
DC
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
RMS Limit
RMS Limit
Co nd uc tion Pe riod
C ond uc tio n Ang le
40EPS.. Se rie s
40EPS.. Series
T = 150°C
J
T = 150°C
J
0
0
5
10 15 20 25 30 35 40
Avera ge Forwa rd Current (A)
0
10
20
30
40
50
60
70
Ave ra ge Forwa rd Curre nt (A)
Fig. 3 - Forward Power Loss Charac-
t e r i s t i c s
Fig. 4 - Forward Power Loss Charac-
t e r i s t i c s
1000
500
Ma ximum Non Re petitive Surge Curre nt
Ve rsus Pulse Tra in Dura tion.
450
Initia l T = 150 °C
J
No Volta ge Rea pplie d
400
Ra ted V
Rea pplied
RRM
100
10
1
350
300
T = 25°C
J
250
T = 150°C
J
200
150 40EPS.. Serie s
40EPS.. Series
100
0
0.5
1
1.5
2
2.5
3
0.01
0.1
Pulse Tra in Dura tion (s)
1
Insta nta neous Forwa rd Volta g e (V)
Fig. 5 - Forward Voltage Drop Character-
i s t i c s
Fig. 6 - Maximum Non-Repetitive Surge
Current
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40EPS.. Series
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Ste a dy Sta te Va lue :
(DC Ope ra tion)
0.1
Single Pulse
40EPS.. Series
0.01
0.001
0.01
0.1
1
Squa re Wa ve Pulse Duration (s)
Fig. 7-ThermalImpedanceZthJC Characteristics
Outline Table
3. 65 (0.144)
5. 30 (0 .209)
DIA.
15.90 (0.626)
15.30 (0.602)
3. 55 (0 .139)
4.70 ( 0.185)
2.5 ( 0.098)
1.5 ( 0.059)
5. 70 ( 0.22 5)
5.30 ( 0.208)
20.30 (0.800 )
19.70 (0.775 )
5.50 ( 0.217)
4. 50 (0.177)
(2 PLCS.)
1
3
14. 80 ( 0.583)
14.20 (0 .559)
4. 30 (0.170)
3. 70 (0.14 5)
2. 20 (0 .087)
M AX.
2. 40 (0 .095)
M AX.
1. 40 (0.056)
1. 00 (0.039)
0.80 ( 0.032)
0. 40 (0.213)
10. 94 ( 0.430)
10.86 (0.427)
Dimensionsinmillimetersandinches
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40EPS.. Series
Ordering Information Table
Device Code
40
E
P
S
16
BASE
CATHODE
2
5
1
2
3
4
1
2
-
-
Current Rating
3
1
CATHODE
Circuit Configuration
E = Single Diode
Package
ANODE
3
4
-
-
-
P = TO-247AC (Modified)
Type of Silicon
08 = 800V
S = Standard Recovery Rectifier
Voltage code: Code x 100 = V
12 = 1200V
16 = 1600V
5
6
RRM
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Data and specifications subject to change without notice. 6/95
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