40EPS08 [VISHAY]
Input Rectifier Diode, 40 A; 输入整流二极管， 40 A
| 型号： | 40EPS08 |
| 厂家： | 
VISHAY |
| 描述： | Input Rectifier Diode, 40 A |
| 文件： | 总6页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
40EPS..PbF High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 40 A
DESCRIPTION/FEATURES
Base
The 40EPS..PbF rectifier High Voltage Series has
been optimized for very low forward voltage drop,
with moderate leakage. The glass passivation
technology used has reliable operation up to
150 °C junction temperature.
cathode
Pb-free
Available
2
RoHS*
COMPLIANT
Typical applications are in input rectification and these
products are designed to be used with Vishay HPP
Switches and output rectifiers which are available in identical
package outlines.
1
3
TO-247AC modified
Cathode
Anode
PRODUCT SUMMARY
This product has been designed and qualified for industrial
level and lead (Pb)-free.
VF at 40 A
1.1 V
475 A
800/1200 V
IFSM
VRRM
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
Sinusoidal waveform
Range
VALUES
40
UNITS
A
V
800/1200
475
A
VF
40 A, TJ = 25 °C
1.1
V
TJ
- 40 to 150
°C
VOLTAGE RATINGS
V
RRM, MAXIMUM
VRSM, MAXIMUM NON-REPETITIVE
IRRM
AT 150 °C
mA
PART NUMBER
PEAK REVERSE VOLTAGE
V
PEAK REVERSE VOLTAGE
V
40EPS08PbF
40EPS12PbF
800
900
1
1200
1300
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
IF(AV)
TC = 105 °C, 180° conduction half sine wave
40
400
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
A
Maximum peak one cycle
non-repetitive surge current
IFSM
475
800
Maximum I2t for fusing
I2t
A2s
1131
11 310
Maximum I2√t for fusing
I2√t
A2√s
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94343
Revision: 06-Jun-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
40EPS..PbF High Voltage Series
Input Rectifier Diode, 40 A
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
20 A, TJ = 25 °C
VALUES
1.0
UNITS
Maximum forward voltage drop
VFM
V
40 A, TJ = 25 °C
1.1
Forward slope resistance
Threshold voltage
rt
7.16
0.74
0.1
mΩ
TJ = 150 °C
VF(TO)
V
TJ = 25 °C
Maximum reverse leakage current
IRM
V
R = Rated VRRM
mA
TJ = 150 °C
1.0
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storrage
temperature range
TJ, TStg
- 40 to 150
°C
Maximum thermal resistance,
junction to case
RthJC
RthJA
RthCS
DC operation
0.6
40
Maximum thermal resistance,
junction to ambient
°C/W
Typical thermal resistance,
case to heatsink
Mounting surface, flat, smooth and greased
0.2
6
g
Approximate weight
Mounting torque
Marking device
0.21
oz.
minimum
maximum
6 (5)
12 (10)
kgf · cm
(lbf · in)
40EPS08
40EPS12
Case style TO-247AC modified (JEDEC)
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2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94343
Revision: 06-Jun-08
40EPS..PbF High Voltage Series
Input Rectifier Diode, 40 A
Vishay High Power Products
150
145
140
135
130
125
120
115
110
105
100
95
80
70
60
50
40
30
20
10
0
40EPS.. Series
thJC (DC) = 0.6 K/W
DC
180°
120°
90°
R
60°
RMS limit
30°
Ø
Conduction angle
30°
60°
Ø
90°
Conduction period
120°
180°
40EPS.. Series
TJ = 150°C
0
5
10 15 20 25 30 35 40 45
0
10
20
30
40
50
60
70
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 4 - Forward Power Loss Characteristics
150
140
130
120
110
100
1000
100
10
40EPS.. Series
RthJC (DC) = 0.6 K/W
Ø
Conduction period
TJ = 25 °C
TJ = 150 °C
30°
60°
20
90°
120°
180°
40EPS.. Series
DC
1
0
10
30
40
50
60
70
0
0.5
1.0
1.5
2.0
2.5
3.0
Average Forward Current (A)
Instantaneous Forward Voltage (V)
Fig. 2 - Current Rating Characteristics
Fig. 5 - Forward Voltage Drop Chacteristics
60
55
50
45
40
35
30
25
20
15
10
5
500
450
400
350
300
250
200
150
100
Maximum non-repetitive surge current
versus pulse train duration.
180°
120°
90°
60°
30°
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
RMS limit
Ø
Conduction angle
40EPS.. Series
TJ = 150 °C
40EPS.. Series
0
0
5
10
15
20
25
30
35
40
0.01
0.1
1.0
VFM - Forward Voltage Drop (V)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (S)
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 94343
Revision: 06-Jun-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
40EPS..PbF High Voltage Series
Input Rectifier Diode, 40 A
Vishay High Power Products
1
Steady state value:
(DC operation)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.1
Single pulse
40EPS.. Series
0.01
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 7 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
40
E
P
S
12 PbF
1
2
3
4
5
6
1
2
-
-
Current rating (40 = 40 A)
Circuit configuration:
E = Single diode
3
4
-
-
Package:
P = TO-247AC modified
Type of silicon:
S = Standard recovery rectifier
08 = 800 V
5
6
-
-
Voltage rating
12 = 1200 V
None = Standard production
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95253
http://www.vishay.com/doc?95255
Part marking information
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4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94343
Revision: 06-Jun-08
Outline Dimensions
Vishay Semiconductors
www.vishay.com
DIMENSIONS in millimeters and inches
A
A
(3)
(6)
E
ΦP
(Datum B)
B
A2
A
N
S
M
M
Ø K D B
ΦP1
(2) R/2
D2
Q
2 x R
(2)
D1 (4)
D
L
4
D
1
2
3
Thermal pad
(5) L1
C
(4)
E1
A
See view B
2 x b2
3 x b
View A - A
C
2 x e
A1
b4
M
M
0.10 C A
Lead assignments
(b1, b3, b5)
Planting
Base metal
Diodes
D D E
E
1. - Anode/open
2. - Cathode
3. - Anode
(c)
c1
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.65
2.21
1.50
0.99
0.99
1.65
1.65
2.59
2.59
0.38
0.38
19.71
13.08
MAX.
5.31
2.59
2.49
1.40
1.35
2.39
2.37
3.43
3.38
0.86
0.76
20.70
-
MAX.
0.209
0.102
0.098
0.055
0.053
0.094
0.094
0.135
0.133
0.034
0.030
0.815
-
MIN.
0.51
MAX.
1.30
15.87
-
MIN.
0.020
0.602
0.540
MAX.
0.051
0.625
-
A
A1
A2
b
0.183
0.087
0.059
0.039
0.039
0.065
0.065
0.102
0.102
0.015
0.015
0.776
0.515
D2
E
15.29
13.72
3
E1
e
5.46 BSC
2.54
0.215 BSC
0.010
0.634
b1
b2
b3
b4
b5
c
K
L
14.20
3.71
16.10
4.29
0.559
0.146
L1
N
0.169
7.62 BSC
0.3
P
P1
Q
3.56
3.66
6.98
5.69
5.49
0.14
-
0.144
0.275
0.224
0.216
-
c1
D
5.31
4.52
0.209
1.78
3
4
R
D1
S
5.51 BSC
0.217 BSC
Notes
(1)
(2)
(3)
Dimensioning and tolerance per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4)
(5)
(6)
(7)
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 21-Jun-11
Document Number: 95253
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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