40EPS16PBF [VISHAY]
Input Rectifier Diode, 40 A; 输入整流二极管, 40 A![40EPS16PBF](http://pdffile.icpdf.com/pdf1/p00166/img/icpdf/40EPS_928539_icpdf.jpg)
型号: | 40EPS16PBF |
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描述: | Input Rectifier Diode, 40 A |
文件: | 总6页 (文件大小:143K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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40EPS16PbF High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 40 A
DESCRIPTION/FEATURES
Base
The 40EPS16PbF rectifier High Voltage Series
has been optimized for very low forward
voltage drop, with moderate leakage. The
glass passivation technology used has reliable
operation up to 150° C junction temperature.
cathode
Pb-free
Available
2
RoHS*
COMPLIANT
Typical applications are in input rectification and these
products are designed to be used with Vishay HPP
switches and output rectifiers which are available in identical
package outlines.
1
3
TO-247AC modified
Cathode
Anode
PRODUCT SUMMARY
This product has been designed and qualified for industrial
level and lead (Pb)-free.
VF at 20 A
1 V
IFSM
475 A
VRRM
1600 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
40
UNITS
Sinusoidal waveform
A
V
1600
475
A
VF
20 A, TJ = 25 °C
1.0
V
TJ
- 40 to 150
°C
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
V
RSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM
AT 150 °C
mA
40EPS16PbF
1600
1700
1
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
TC = 105 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
VALUES
UNITS
Maximum average forward current
IF(AV)
40
400
A
Maximum peak one cycle
non-repetitive surge current
IFSM
475
800
Maximum I2t for fusing
I2t
A2s
1131
11 310
Maximum I2√t for fusing
I2√t
A2√s
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94344
Revision: 23-Apr-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
40EPS16PbF High Voltage Series
Input Rectifier Diode, 40 A
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
40 A, TJ = 25 °C
VALUES
1.14
7.6
UNITS
V
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
VFM
rt
mΩ
V
TJ = 150 °C
VF(TO)
0.72
0.1
TJ = 25 °C
Maximum reverse leakage current
IRM
V
R = Rated VRRM
mA
TJ = 150 °C
1.0
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
- 40 to 150
°C
Maximum thermal resistance,
junction to case
RthJC
RthJA
RthCS
DC operation
0.6
40
Maximum thermal resistance,
junction to ambient
°C/W
Typical thermal resistance,
case to heatsink
Mounting surface, flat, smooth and greased
0.2
6
g
Approximate weight
0.21
oz.
minimum
maximum
6 (5)
12 (10)
kgf · cm
(lbf · in)
Mounting torque
Marking device
Case style TO-247AC modified (JEDEC)
40EPS16
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2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94344
Revision: 23-Apr-08
40EPS16PbF High Voltage Series
Input Rectifier Diode, 40 A
Vishay High Power Products
150
145
80
70
60
50
40
30
20
10
0
DC
180°
120°
90°
60°
30°
40EPS16
thJC (DC) = 0.6 K/W
R
140
135
130
125
RMS limit
Ø
Conduction angle
120
115
110
105
30°
Ø
60°
90°
Conduction period
120°
180°
40EPS16
TJ = 150 °C
100
95
5
10 15 20 25 30 35 40 45
Average Forward Current (A)
60
0
0
0
0
10
20
30
40
50
70
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 4 - Forward Power Loss Characteristics
1000
100
10
150
140
130
120
110
100
40EPS16
RthJC (DC) = 0.6 K/W
Ø
Conduction period
TJ = 25 °C
30°
60°
TJ = 150 °C
90°
120°
180°
DC
40EPS16
1
1.5
2.5
0.5
60
10
20
30
40
50
70
Instantaneous Forward Voltage (V)
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Fig. 5 - Forward Voltage Drop Chacteristics
500
450
400
350
300
250
200
150
100
60
55
50
45
40
35
30
25
20
15
10
5
Maximum non-repetitive surge current
versus pulse train duration.
180°
120°
90°
60°
30°
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
RMS limit
Ø
Conduction angle
40EPS16
TJ = 150 °C
40EPS16
0
0.01
0.1
1
40
5
10
15
20
25
30
35
Pulse Train Duration (s)
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 94344
Revision: 23-Apr-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
40EPS16PbF High Voltage Series
Input Rectifier Diode, 40 A
Vishay High Power Products
1
Steady state value
(DC operation)
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
40EPS16
0.01
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 7 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
40
E
P
S
16 PbF
1
2
3
4
5
6
1
2
-
-
Current rating (40 = 40 A)
Circuit configuration:
E = Single diode
3
4
-
-
Package:
P = TO-247AC modified
Type of silicon:
S = Standard recovery rectifier
5
6
-
-
Voltage rating (16 = 1600 V)
None = Standard production
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95253
http://www.vishay.com/doc?95255
Part marking information
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4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94344
Revision: 23-Apr-08
Outline Dimensions
Vishay Semiconductors
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DIMENSIONS in millimeters and inches
A
A
(3)
(6)
E
ΦP
(Datum B)
B
A2
A
N
S
M
M
Ø K D B
ΦP1
(2) R/2
D2
Q
2 x R
(2)
D1 (4)
D
L
4
D
1
2
3
Thermal pad
(5) L1
C
(4)
E1
A
See view B
2 x b2
3 x b
View A - A
C
2 x e
A1
b4
M
M
0.10 C A
Lead assignments
(b1, b3, b5)
Planting
Base metal
Diodes
D D E
E
1. - Anode/open
2. - Cathode
3. - Anode
(c)
c1
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.65
2.21
1.50
0.99
0.99
1.65
1.65
2.59
2.59
0.38
0.38
19.71
13.08
MAX.
5.31
2.59
2.49
1.40
1.35
2.39
2.37
3.43
3.38
0.86
0.76
20.70
-
MAX.
0.209
0.102
0.098
0.055
0.053
0.094
0.094
0.135
0.133
0.034
0.030
0.815
-
MIN.
0.51
MAX.
1.30
15.87
-
MIN.
0.020
0.602
0.540
MAX.
0.051
0.625
-
A
A1
A2
b
0.183
0.087
0.059
0.039
0.039
0.065
0.065
0.102
0.102
0.015
0.015
0.776
0.515
D2
E
15.29
13.72
3
E1
e
5.46 BSC
2.54
0.215 BSC
0.010
0.634
b1
b2
b3
b4
b5
c
K
L
14.20
3.71
16.10
4.29
0.559
0.146
L1
N
0.169
7.62 BSC
0.3
P
P1
Q
3.56
3.66
6.98
5.69
5.49
0.14
-
0.144
0.275
0.224
0.216
-
c1
D
5.31
4.52
0.209
1.78
3
4
R
D1
S
5.51 BSC
0.217 BSC
Notes
(1)
(2)
(3)
Dimensioning and tolerance per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4)
(5)
(6)
(7)
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 21-Jun-11
Document Number: 95253
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Document Number: 91000
Revision: 11-Mar-11
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