40EPS08PBF [INFINEON]
INPUT RECTIFIER DIODE; 输入整流二极管
| 型号： | 40EPS08PBF |
| 厂家： | 
Infineon |
| 描述： | INPUT RECTIFIER DIODE |
| 文件： | 总5页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I2179 rev. A 03/06
SAFEIR Series
40EPS..PbF
INPUT RECTIFIER DIODE
Lead-Free ("PbF" suffix)
VF < 1V @ 20A
IFSM = 475A
VRRM = 800 - 1200V
Description/ Features
The 40EPS..PbF rectifier SAFEIR series has been opti-
mized for very low forward voltage drop, with moderate
leakage. The glass passivation technology used has reli-
able operation up to 150° C junction temperature.
Typical applications are in input rectification and these
products are designed to be used with International
RectifierSwitchesandOutputRectifierswhichareavailable
in identical package outlines.
Package Outline
Major Ratings and Characteristics
Characteristics
Values
Units
I
Sinusoidal
waveform
F(AV)
40
800-1200
475
A
V
A
V
range
RRM
I
FSM
V
@20A, T =25°C
J
1.0
V
F
TO-247AC (Modified)
T
-40to150
°C
J
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1
40EPS..PbF SAFEIR Series
Bulletin I2179 rev. A 03/06
Voltage Ratings
VRRM , maximum
peakreversevoltage
V
VRSM, maximum non repetitive
IRRM
150°C
mA
peakreversevoltage
V
PartNumber
40EPS08PbF
40ETF12PbF
800
900
1
1200
1300
Absolute Maximum Ratings
Parameters
40EPS.. Units
Conditions
IF(AV) Max. Average Forward Current
40
A
@TC =105°C, 180°conductionhalfsinewave
IFSM Max.PeakOneCycleNon-Repetitive
Surge Current
400
475
10msSinepulse, ratedVRRMapplied
10msSine pulse,novoltagereapplied
A
I2t
Max.I2tforfusing
800
1131
11310
10msSinepulse, ratedVRRMapplied
10msSinepulse,novoltagereapplied
t=0.1to10ms, novoltagereapplied
A2s
I2√t Max.I2√tforfusing
A2√s
Electrical Specifications
Parameters
40EPS.. Units
Conditions
VFM Max. Forward Voltage Drop
1.1
7.16
0.74
0.1
V
mΩ
V
@ 40A, TJ = 25°C
rt
Forward slope resistance
TJ = 150°C
VF(TO) Threshold voltage
IRM Max. Reverse Leakage Current
TJ = 25 °C
mA
VR = rated VRRM
1.0
TJ = 150 °C
Thermal-Mechanical Specifications
Parameters
40EPS.. Units
Conditions
TJ
Max. Junction Temperature Range
-40to150
-40to150
0.6
°C
°C
Tstg Max. Storage Temperature Range
RthJC Max. Thermal Resistance Junction
toCase
°C/W
DC operation
RthJA Max. Thermal Resistance Junction
to Ambient
40
°C/W
°C/W
g(oz.)
RthCS TypicalThermalResistance, Caseto
Heatsink
0.2
Mountingsurface, smoothandgreased
wt
T
Approximate Weight
Mounting Torque
6(0.21)
6(5)
Min.
Kg-cm
(Ibf-in)
Max.
12(10)
CaseStyle
TO-247AC
40EPS12
JEDEC (Modified)
Marking Device
2
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40EPS..PbF SAFEIR Series
Bulletin I2179 rev. A 03/06
150
145
140
135
130
125
120
115
110
105
100
95
150
40EPS.. Series
(DC) = 0.6 K/W
40EPS.. Series
R
(DC) = 0.6 K/W
R
thJC
thJC
140
130
120
110
100
Conduction Period
Conduction Angle
30°
30°
60°
60°
90°
90°
120°
180°
120°
180°
DC
0
10 20
30 40
50
60
70
0
5
10 15 20 25 30 35 40 45
Average Forward Current (A)
Average Forward Current (A)
Fig. 1-CurrentRatingCharacteristics
Fig. 2-CurrentRatingCharacteristics
80
70
60
50
40
30
20
10
0
60
55
50
45
40
35
30
25
20
15
10
5
DC
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
RM S Lim it
RM S Lim it
Conduction Period
40EPS.. Series
Conduction Angle
40EPS.. Series
T = 150°C
J
T = 150°C
J
0
0
5
10 15 20 25 30 35 40
0
10 20 30 40
Average Forward Current (A)
Fig. 4-ForwardPowerLossCharacteristics
50 60 70
Average Forward Current (A)
Fig. 3-ForwardPowerLossCharacteristics
500
1000
100
10
Maximum Non Repetitive Surge Current
VersusPulse Train Duration.
450
400
350
300
250
200
150
100
Initial T = 150 °C
J
No Voltage Reapplied
Rated V
Reapplied
RRM
T = 25°C
J
T = 150°C
J
40EPS.. Series
40EPS.. Se rie s
1
0
0.5
InstantaneousForward Voltage (V)
Fig. 5-ForwardVoltageDropCharacteristics
1
1.5
2
2.5
3
0.01
0.1
Pulse Train Duration (s)
1
Fig. 6-MaximumNon-RepetitiveSurgeCurrent
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3
40EPS..PbF SAFEIR Series
Bulletin I2179 rev. A 03/06
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
Steady State Value:
(DC Operation)
D = 0.08
0.1
Single Pulse
40EPS.. Series
0.01
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 7-ThermalImpedanceZthJC Characteristics
Outline Table
3. 65 (0.144)
5. 30 (0.209)
DIA.
15.90 (0.626)
15.30 (0.602)
3. 55 (0.139)
4.70 ( 0.185)
2.5 ( 0.098)
1.5 ( 0.059)
5. 70 (0.225)
5.30 ( 0.208)
20.30 (0.800)
19.70 (0.775)
5.50 ( 0.217)
4. 50 (0.177)
(2 PLCS.)
1
3
14. 80 ( 0.583)
14.20 (0.559)
4. 30 (0.170)
3. 70 (0.145)
2. 20 (0.087)
M AX.
2. 40 (0.095)
MAX.
1. 40 (0.056)
1. 00 (0.039)
0.80 ( 0.032)
0. 40 (0.213)
10. 94 ( 0.430)
10.86 (0.427)
BASE
CATHODE
2
3
1
ANODE
CATHODE
Dimensions in millimeters and inches
4
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40EPS..PbF SAFEIR Series
Bulletin I2179 rev. A 03/06
Marking Information
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
40EPS12
EXAMPLE: THIS IS A 40EPS12
WITH ASSEMBLY
P035H
56
57
LOT CODE 5657
ASSEMBLED ON WW 35, 2000
IN ASSEMBLY LINE "H"
DATE CODE
P = LEAD-FREE
YEAR 0 = 2000
WEEK 35
ASSEMBLY
LOT CODE
LINE H
Ordering Information Table
Device Code
40
E
P
S
12 PbF
2
4
5
6
1
3
1
2
-
-
Current Rating (40 = 40A)
Circuit Configuration:
E = Single Diode
3
4
-
-
Package:
P = TO-247AC (Modified)
Type of Silicon:
12 = 1200V
08 = 800V
S = Standard Recovery Rectifier
VoltageRatings
5
6
-
-
y none = Standard Production
y PbF = Lead-Free
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 03/06
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5
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