2SD2556Q [ETC]
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-252VAR ; 晶体管| BJT | NPN | 80V V（ BR ） CEO | 5A I（C ） | TO- 252VAR\n
| 型号： | 2SD2556Q |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-252VAR
|
| 文件： | 总2页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SD2556
Silicon NPN epitaxial planer type
Unit: mm
6.5 0.1
5.3 0.1
4.35 0.1
For power switching
2.3 0.1
0.5 0.1
I Features
• High forward current transfer ratio hFE
• Allowing supply with the radial taping
• Low collector to emitter saturation voltage VCE(sat): < 0.5 V
1.0 0.1
0.1 0.05
0.5 0.1
0.75 0.1
2.3 0.1
(5.3)
(4.35)
(3.0)
4.6 0.1
I Absolute Maximum Ratings TC = 25°C
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Symbol
VCBO
VCEO
VEBO
ICP
Rating
Unit
V
1
2
3
130
80
V
7
V
1: Base
2: Collector
3: Emitter
10
A
U Type Package
IC
5
A
Internal Connection
TC = 25°C
Ta = 25°C
PC
10
W
Collector power
dissipation
1
C
Junction temperature
Storage temperature
Tj
150
°C
°C
B
Tstg
−55 to +150
E
I Electrical Characteristics TC = 25°C 3°C
Parameter
Collector cutoff current
Emitter cutoff current
Symbol
ICBO
Conditions
Min
Typ
Max
Unit
µA
µA
V
VCB = 100 V, IE = 0
10
50
IEBO
VEB = 5 V, IC = 0
Collector to emitter voltage
Forward current transfer ratio
VCEO
hFE1
IC = 1 mA, IB = 0
80
45
90
VCE = 2 V, IC = 0.1 A
VCE = 2 V, IC = 2 A
*
hFE2
260
0.5
1.5
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
VCE(sat)
VBE(sat)
fT
IC = 4 A, IB = 0.2 A
V
V
IC = 4 A, IB = 0.2 A
VCE = 10 V, IC = − 0.5 A, f = 10 MHz
IC = 2 A, IB1 = 0.2 A, IB2 = − 0.2 A
VCC = 50 V
30
0.5
1.5
MHz
µs
ton
Storage time
tstg
µs
Fall time
tf
0.15
µs
Note) : Rank classification
*
Rank
P
Q
hFE2
130 to 260
90 to 180
1
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