2SB649AB [ETC]
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-126 ; 晶体管| BJT | PNP | 160V V（ BR ） CEO | 1.5AI （ C） | TO- 126\n
| 型号： | 2SB649AB |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-126
|
| 文件： | 总7页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SB649, 2SB649A
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary pair with 2SD669/A
Outline
TO-126 MOD
1. Emitter
2. Collector
3. Base
1
2
3
2SB649, 2SB649A
Absolute Maximum Ratings (Ta = 25°C)
Ratings
2SB649
–180
–120
–5
Item
Symbol
VCBO
VCEO
VEBO
IC
2SB649A
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
–180
–160
V
–5
V
–1.5
–1.5
A
Collector peak current
Collector power dissipation
IC(peak)
–3
–3
A
PC
1
1
W
W
°C
°C
PC*1
Tj
20
20
Junction temperature
150
150
Storage temperature
Tstg
–55 to +150
–55 to +150
Note: 1. Value at TC = 25°C
2
2SB649, 2SB649A
Electrical Characteristics (Ta = 25°C)
2SB649
2SB649A
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
–180
–120
–5
—
—
—
—
—
—
–180
–160
–5
—
—
—
—
—
—
V
IC = –1 mA, IE = 0
IC = –10 mA, RBE = ∞
IE = –1 mA, IC = 0
VCB = –160 V, IE = 0
Collector to emitter
breakdown voltage
V
Emitter to base
breakdown voltage
V
Collector cutoff current ICBO
DC current transfer ratio hFE1
—
—
—
–10
320
—
—
—
–10
200
µA
1
*
60
60
VCE = –5 V,
IC = –150 mA
hFE2
30
—
—
—
—
—
—
30
—
—
—
—
—
—
VCE = –5 V,
IC = –500 mA*2
Collector to emitter
saturation voltage
VCE(sat)
—
–1
–1.5
—
—
–1
–1.5
—
V
V
IC = –500 mA,
IB = –50 mA
Base to emitter voltage VBE
—
—
VCE = –5 V,
IC = –150 mA
Gain bandwidth product fT
140
27
140
27
MHz VCE = –5 V,
IC = –150 mA
Collector output
capacitance
Cob
—
—
pF
VCB = –10 V, IE = 0,
f = 1 MHz
Notes: 1. The 2SB649 and 2SB649A are grouped by hFE1 as follows.
2. Pulse test
B
C
D
2SB649
60 to 120
60 to 120
100 to 200
100 to 200
160 to 320
—
2SB649A
3
2SB649, 2SB649A
Maximum Collector Dissipation
Curve
Area of Safe Operation
(–13.3 V, –1.5 A)
30
20
10
–3
ICmax
–1.0
(–40 V, –0.5 A)
–0.3
–0.1
DC Operation (TC = 25°C)
(–120 V, –0.038 A)
–0.03
–0.01
(–160 V, –0.02 A)
2SB649A
2SB649
0
50
100
150
–1
–3
–10
–30 –100 –300
Collector to emitter voltage VCE (V)
Case temperature TC (°C)
Typical Transfer Characteristics
–500
Typical Output Characteristics
TC = 25°C
–1.0
–0.8
–0.6
–0.4
–0.2
VCE = –5 V
–100
–10
–1
IB = 0
–30
0
–10
–20
–40
–50
0
–0.2 –0.4 –0.6 –0.8 –1.0
Base to emitter voltage VBE (V)
Collector to emitter voltage VCE (V)
4
2SB649, 2SB649A
DC Current Transfer Ratio
vs. Collector Current
Collector to Emitter Saturation
Voltage vs. Collector Current
–1.2
–1.0
–0.8
–0.6
–0.4
–0.2
–0
350
350
250
200
150
100
50
VCE = –5V
IC = 10 IB
–25
25
0
–1
–10
–100
–1,000
–1
–10
–100
–1,000
Collector current IC (mA)
Collector current IC (mA)
Gain Bandwidth Product
vs. Collector Current
Base to Emitter Saturation Voltage
vs. Collector Current
240
200
160
120
80
–1.2
–1.0
–0.8
–0.6
–0.4
–0.2
–0
VCE = –5 V
IC = 10 IB
40
0
–1
–10
–100
–1,000
–10
–30
–100
–300
–1,000
Collector current IC (mA)
Collector current IC (mA)
5
2SB649, 2SB649A
Collector Output Capacitance vs.
Collector to Base Voltage
200
100
50
f = 1 MHz
IE = 0
20
10
5
2
–1
–3
–10
–30
–100
Collector to base voltage VCB (V)
6
2SB649, 2SB649A
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of
this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual
property claims or other problems that may result from applications based on the examples described
herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party or
Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
For further information write to:
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U S A
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7
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