2SB649AB(SOT-89) [UTC]

Transistor;
2SB649AB(SOT-89)
型号: 2SB649AB(SOT-89)
厂家: Unisonic Technologies    Unisonic Technologies
描述:

Transistor

文件: 总4页 (文件大小:113K)
中文:  中文翻译
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UTC 2SB649 /A  
PNP EPITAXIAL SILICON TRANSISTOR  
.
BIPOLAR POWER GENERAL  
PURPOSE TRANSISTOR  
APPLICATIONS  
* Low frequency power amplifier complementary pair with  
UTC 2SB669/A  
1
SOT-89  
1:EMITTER 2:COLLECTOR 3:BASE  
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified )  
PARAMETER  
Collector-base voltage  
SYMBOL  
RATING  
-180  
UNIT  
V
VCBO  
Collector-emitter voltage  
2SB649  
VCEO  
-120  
-160  
V
2SB649A  
Emitter-base voltage  
Collector current  
Collector peak current  
Collector power dissipation  
Junction Temperature  
Storage Temperature  
VEBO  
Ic  
lc(peak)  
Pc  
Tj  
TSTG  
-5  
-1.5  
-3  
1
150  
V
A
A
W
°C  
°C  
-55 ~ +150  
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
V(BR)CBO  
TEST CONDITIONS  
IC=-1mA, IE=0  
MIN TYP MAX UNIT  
Collector to bse breakdown voltage  
Collector to emitter breakdown  
-180  
V
IC=-10mA, RBE=∞  
voltage  
2SB649  
V(BR)CEO  
-120  
-160  
-5  
V
2SB649A  
Emitter to base breakdown voltage  
Collector cut-off current  
V(BR) EBO  
ICBO  
IE=-1mA, IC=0  
V
µA  
VCB=-160V, IE=0  
-10  
hFE1  
VCE=-5V, Ic=-150mA (note)  
VCE=-5V, Ic=-500mA (note)  
VCE=-5V, Ic=-150mA (note)  
VCE=-5V, Ic=-500mA (note)  
60  
30  
60  
30  
320  
2SB649  
DC current gain  
hFE2  
hFE1  
hFE2  
200  
2SB649A  
Collector-emitter saturation voltage  
Base-emitter voltage  
Current gain bandwidth product  
Output capacitance  
VCE(sat) Ic=-600mA, IB=-50mA  
-1  
-1.5  
V
V
MHz  
pF  
VBE  
fT  
VCE=-5V, Ic=-150mA  
VCE=-5V,Ic=-150mA  
VCB=-10V, IE=0, f=1MHz  
140  
27  
Cob  
1
UTC  
UNISONIC TECHNOLOGIES CO. LTD  
QW-R208-035,A  
UTC 2SB649 /A  
PNP EPITAXIAL SILICON TRANSISTOR  
Note: Pulse test.  
CLASSIFICATION OF hFE1  
RANK  
B
C
D
RANGE  
60-120  
100-200  
160-320  
TYPICAL PARAMETERS PERFORMANCE  
2
UTC  
UNISONIC TECHNOLOGIES CO. LTD  
QW-R208-035,A  
UTC 2SB649 /A  
PNP EPITAXIAL SILICON TRANSISTOR  
3
UTC  
UNISONIC TECHNOLOGIES CO. LTD  
QW-R208-035,A  
UTC 2SB649 /A  
PNP EPITAXIAL SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
4
UTC  
UNISONIC TECHNOLOGIES CO. LTD  
QW-R208-035,A  

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