2SB649AC(TO-92) [UTC]
Transistor;
| 型号： | 2SB649AC(TO-92) |
| 厂家： | 
Unisonic Technologies |
| 描述： | Transistor |
| 文件： | 总4页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC 2SB649 /A
PNP EPITAXIAL SILICON TRANSISTOR
BIPOLAR POWER GENERAL
PURPOSE TRANSISTOR
APPLICATIONS
* Low frequency power amplifier complementary pair with
UTC 2SB669/A
1
TO-92
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified )
PARAMETER
Collector-base voltage
SYMBOL
VCBO
RATING
-180
UNIT
V
V
Collector-emitter voltage
VCEO
2SB649
2SB649A
-120
-160
Emitter-base voltage
Collector current
Collector peak current
Collector power dissipation
Collector power dissipation (TC=25°C)
Junction Temperature
Storage Temperature
VEBO
Ic
lc(peak)
Pc
Pc
Tj
-5
-1.5
-3
1
20
V
A
A
W
W
°C
°C
150
-55 ~ +150
TSTG
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
V(BR)CBO
V(BR)CEO
TEST CONDITIONS
IC=-1mA, IE=0
MIN TYP MAX UNIT
Collector to bse breakdown voltage
Collector to emitter breakdown
-180
V
V
IC=-10mA, RBE=∞
voltage
2SB649
-120
-160
-5
2SB649A
Emitter to base breakdown voltage
Collector cut-off current
V(BR) EBO
ICBO
IE=-1mA, IC=0
V
µA
VCB=-160V, IE=0
-10
1
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R201-048,A
UTC 2SB649 /A
PNP EPITAXIAL SILICON TRANSISTOR
PARAMETER
SYMBOL
TEST CONDITIONS
VCE=-5V, Ic=-150mA (note)
VCE=-5V, Ic=-500mA (note)
VCE=-5V, Ic=-150mA (note)
VCE=-5V, Ic=-500mA (note)
Ic=-600mA, IB=-50mA
MIN TYP MAX UNIT
hFE1
hFE2
hFE1
hFE2
VCE(sat)
VBE
60
30
60
30
320
2SB649
DC current gain
200
2SB649A
Collector-emitter saturation voltage
Base-emitter voltage
-1
V
V
VCE=-5V, Ic=-150mA
-1.5
Current gain bandwidth product
Output capacitance
fT
Cob
VCE=-5V,Ic=-150mA
VCB=-10V, IE=0, f=1MHz
140
27
MHz
pF
Note: Pulse test.
CLASSIFICATION OF hFE1
RANK
B
C
D
RANGE
60-120
100-200
160-320
TYPICAL PARAMETERS PERFORMANCE
2
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R201-048,A
UTC 2SB649 /A
PNP EPITAXIAL SILICON TRANSISTOR
3
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R201-048,A
UTC 2SB649 /A
PNP EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
4
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R201-048,A
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