2SB649AL-B-AB3-R [UTC]
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR; 双极型功率通用晶体管
| 型号： | 2SB649AL-B-AB3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 文件： | 总4页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SB649/A
PNP SILICON TRANSISTOR
BIPOLAR POWER GENERAL
PURPOSE TRANSISTOR
1
SOT-89
APPLICATIONS
ꢀ
* Low frequency power amplifier complementary pair with UTC
2SB669/A
1
TO-126
1
TO-126C
1
TO-92
*Pb-free plating product number:
2SB649L/2SB649AL
ꢀ
ORDERING INFORMATION
Order Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
1
B
E
E
E
E
B
E
E
E
E
2
3
E
B
B
B
B
E
B
B
B
B
2SB649-x-AB3-R
2SB649-x-T6C-K
2SB649-x-T60-K
2SB649-x-T92-B
2SB649-x-T92-K
2SB649A-x-AB3-R
2SB649A-x-T6C-K
2SB649A-x-T60-K
2SB649A-x-T92-B
2SB649A-x-T92-K
2SB649L-x-AB3-R
2SB649L-x-T6C-K
2SB649L-x-T60-K
2SB649L-x-T92-B
2SB649L-x-T92-K
2SB649AL-x-AB3-R
2SB649AL-x-T6C-K
2SB649AL-x-T60-K
2SB649AL-x-T92-B
2SB649AL-x-T92-K
SOT-89
TO-126C
TO-126
TO-92
C
C
C
C
C
C
C
C
C
C
Tape Reel
Bulk
Bulk
Tape Box
Bulk
TO-92
SOT-89
TO-126C
TO-126
TO-92
Tape Reel
Bulk
Bulk
Tape Box
Bulk
TO-92
2SB649L-x-AB3-R
(1) B: Tape Box, K: Bulk, R: Tape Reel
(1)Packing Type
(2)Package Type
(2) AB3: SOT-89, T6C: TO-126C, T60: TO-126,
T92: TO-92
(3)Rank
(3) x: refer to Classification of h
FE
(4)Lead Plating
(4) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 4
QW-R204-006,D
2SB649/A
PNP SILICON TRANSISTOR
ꢀ
ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
RATING
-180
-120
-160
-5
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
2SB649
VCEO
V
2SB649A
Emitter-Base Voltage
Collector Current
VEBO
IC
V
A
-1.5
Collector Peak Current
lC(PEAK)
-3
A
TO-126/TO-126C
TO-92
1.4
W
W
mW
Collector Power Dissipation
PD
1
SOT-89
500
Junction Temperature
Storage Temperature
TJ
+150
-40 ~ +150
°
°
C
C
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ꢀ
ELECTRICAL CHARACTERISTICS (Ta=25
℃
, unless otherwise specified)
PARAMETER SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector to Base Breakdown Voltage
BVCBO IC=-1mA, IE=0
BVCEO IC=-10mA, RBE
BVEBO IE=-1mA, IC=0
-180
-120
-160
-5
V
V
V
Collector to Emitter Breakdown 2SB649
=
∞
Voltage
2SB649A
Emitter to Base Breakdown Voltage
Collector Cut-off Current
ICBO
hFE1
hFE2
hFE1
hFE2
VCB=-160V, IE=0
-10
µA
VCE=-5V, IC=-150mA (note)
VCE=-5V, IC=-500mA (note)
VCE=-5V, IC=-150mA (note)
VCE=-5V, IC=-500mA (note)
60
30
60
30
320
2SB649
DC Current Gain
200
2SB649A
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
VCE(SAT) Ic=-600mA, IB=-50mA
-1
V
V
VBE
fT
VCE=-5V, IC=-150mA
VCE=-5V,IC=-150mA
VCB=-10V, IE=0, f=1MHz
-1.5
Current Gain Bandwidth Product
Output Capacitance
140
27
MHz
pF
Cob
Note: Pulse test.
ꢀ
CLASSIFICATION OF hFE
RANK
B
C
D
RANGE
60-120
100-200
160-320
UNISONIC TECHNOLOGIES CO., LTD
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QW-R204-006,D
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2SB649/A
PNP SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS
Typical Output Characteristecs
Typical Transfer Characteristics
VCE=-5V
1.0
0.8
0.6
0.4
-500
-100
0
.
4
-
0
.
5
5
TC=25℃
-
5
.
3
-
.
0
.
4
-
3
-
5
.
2
-
-2.0
-1.5
-10
-1
-1.0
0.2
-0.5mA
IB=0
-20
0
-10
-30
-40
-50
0
-0.2
-0.4
-0.6
-0.8
-1.0
Base to Emitter Voltage, VBE (V)
Collector to Emitter Voltage, VCE (V)
Collector to Emitter Saturation Voltage
vs. Collector Current
DC Current Transfer Ratio
vs. Collector Current
350
300
250
200
150
100
-1.2
-1.0
VCE=-5V
IC=10 IB
℃
5
7
=
a
T
℃
5
-0.8
-0.6
2
℃
5
2
-
-0.4
-0.2
0
℃
5
5
2
7
=
TC
50
1
5
2
-
-1
-10
-100
-1,000
-1
-10
-100
-1,000
CollectorCurrent, IC (mA)
CollectorCurrent, IC (mA)
Base to Emitter Saturation Voltage
vs. Collector Current
Gain Bandwidth Product
vs. Collector Current
1.2
240
VCE=5V
Ta=25℃
IC=10IB
200
160
120
80
1.0
0.8
0.6
℃
5
2
-
=
C
T
5
2
5
7
0.4
0.2
0
40
0
1
3
10 30
100 300 1,000
10
30
100
300
1,000
CollectorCurrent, IC (mA)
Collector Current, IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R204-006,D
www.unisonic.com.tw
2SB649/A
PNP SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS(Cont.)
Area of Safe Operation
Collector Output Capacitance
vs. Collector to Base Voltage
200
100
50
-3
f=1MHz
IE=0
I
Cmax
(-13.3V, -1.5A)
-1.0
(-40V, -0.5A)
2SB649A
-0.3
-0.1
20
10
DC Operation (TC=25℃)
(-120V, -0.038A)
(-160V,- 0.02A)
2SB649
5
-0.03
-0.01
2
-1
-1
-3
-10 -30 -100 -300
-3
-10
-30
-100
Collector to Emitter Voltage, VCE (V)
Collector to Base Voltage, VCB (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R204-006,D
www.unisonic.com.tw
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