2N4921/D [ETC]
Medium-Power Plastic NPN Silicon Transistors ; 中等功率塑料NPN硅晶体管
| 型号： | 2N4921/D |
| 厂家： | 
ETC |
| 描述： | Medium-Power Plastic NPN Silicon Transistors
|
| 文件： | 总8页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductort
2N4921
thru
Medium-Power Plastic NPN
Silicon Transistors
*
2N4923
. . . designed for driver circuits, switching, and amplifier
applications. These high–performance plastic devices feature:
*ON Semiconductor Preferred Device
1 AMPERE
GENERAL–PURPOSE
POWER TRANSISTORS
40–80 VOLTS
• Low Saturation Voltage —
V
CE(sat)
= 0.6 Vdc (Max) @ I = 1.0 Amp
C
• Excellent Power Dissipation Due to Thermopad Construction —
P = 30 W @ T = 25_C
D
C
30 WATTS
• Excellent Safe Operating Area
• Gain Specified to I = 1.0 Amp
C
• Complement to PNP 2N4918, 2N4919, 2N4920
*MAXIMUM RATINGS
Rating
Symbol 2N4921 2N4922 2N4923
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
40
40
60
60
80
80
CEO
CASE 77–09
TO–225AA TYPE
V
CB
V
EB
5.0
Collector Current — Continuous (1)
I
C
1.0
3.0
Base Current — Continuous
I
B
1.0
Adc
Total Power Dissipation @ T = 25_C
P
30
0.24
Watts
W/_C
_C
C
D
Derate above 25_C
Operating & Storage Junction
Temperature Range
T , T
J
–65 to +150
stg
THERMAL CHARACTERISTICS (2)
Characteristic
Symbol
Max
4.16
Unit
Thermal Resistance, Junction to Case
θ
_C/W
JC
(1) The 1.0 Amp maximum I value is based upon JEDEC current gain requirements.
C
The 3.0 Amp maximum value is based upon actual current handling capability of the
device (see Figures 5 and 6)
(2) Recommend use of thermal compound for lowest thermal resistance.
*Indicates JEDEC Registered Data.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
March, 2001 – Rev. 9
2N4921/D
2N4921 thru 2N4923
40
30
20
10
0
25
50
75
100
125
150
T , CASE TEMPERATURE (°C)
C
Figure 1. Power Derating
Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.
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2
2N4921 thru 2N4923
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (3)
(I = 0.1 Adc, I = 0)
V
Vdc
CEO(sus)
2N4921
2N4922
2N4923
C
B
40
60
80
—
—
—
Collector Cutoff Current
(V = 20 Vdc, I = 0)
I
mAdc
mAdc
CEO
2N4921
2N4922
2N4923
CE
B
—
—
—
0.5
0.5
0.5
(V = 30 Vdc, I = 0)
CE
B
(V = 40 Vdc, I = 0)
CE
B
Collector Cutoff Current
I
CEX
(V = Rated V
, V
, V
= 1.5 Vdc)
= 1.5 Vdc, T = 125_C)
CE
CEO EB(off)
—
—
0.1
0.5
(V = Rated V
CE
CEO EB(off)
C
Collector Cutoff Current
(V = Rated V , I = 0)
I
—
0.1
mAdc
mAdc
CBO
CB
CB
E
Emitter Cutoff Current
(V = 5.0 Vdc, I = 0)
I
EBO
—
1.0
EB
C
ON CHARACTERISTICS
DC Current Gain (3)
h
FE
—
(I = 50 mAdc, V = 1.0 Vdc)
C
CE
40
30
10
—
150
—
(I = 500 mAdc, V = 1.0 Vdc)
C
CE
(I = 1.0 Adc, V = 1.0 Vdc)
C
CE
Collector–Emitter Saturation Voltage (3)
(I = 1.0 Adc, I = 0.1 Adc)
V
V
—
—
—
0.6
1.3
1.3
Vdc
Vdc
Vdc
CE(sat)
C
B
Base–Emitter Saturation Voltage (3)
(I = 1.0 Adc, I = 0.1 Adc)
BE(sat)
C
B
Base–Emitter On Voltage (3)
(I = 1.0 Adc, V = 1.0 Vdc)
V
BE(on)
C
CE
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product (I = 250 mAdc, V = 10 Vdc, f = 1.0 MHz)
f
3.0
—
—
100
—
MHz
pF
C
CE
T
Output Capacitance (V = 10 Vdc, I = 0, f = 100 kHz)
C
CB
E
ob
Small–Signal Current Gain (I = 250 mAdc, V = 10 Vdc, f = 1.0 kHz)
h
fe
25
—
C
CE
(3) Pulse Test: PW ≈ 300 µs, Duty Cycle ≈ 2.0%.
*Indicates JEDEC Registered Data.
APPROX
+11 V
TURN-ON PULSE
5.0
V
CC
I /I = 20
= 30 V
I /I = 10, UNLESS NOTED
C B
t
1
V
CC
3.0
2.0
C B
T = 25°C
R
C
J
V
in
T = 150°C
J
V
CC
= 60 V
V
in
R
B
V
BE(off)
1.0
C Ă<<ĂC
jd
eb
0.7
0.5
t
r
t
3
-ā4.0 V
V
CC
= 30 V
APPROX
+11 V
SCOPE
0.3
0.2
t
d
t ≤ 15 ns
1
V
V
= 60 V
CC
100 < t ≤ 500 µs
2
= 2.0 V
BE(off)
V
in
t ≤ 15 ns
3
0.1
0.07
0.05
V
V
= 30 V
= 0
APPROX 9.0 V
CC
DUTY CYCLE ≈ 2.0%
BE(off)
t
2
R
B
and R varied to
C
TURN-OFF PULSE
10
20 30
50 70 100
200 300
500 700 1000
obtain desired
current levels
I , COLLECTOR CURRENT (mA)
C
Figure 2. Switching Time Equivalent Circuit
Figure 3. Turn–On Time
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3
2N4921 thru 2N4923
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
P
(pk)
0.1
θ
θ
(t) = r(t) θ
JC
= 4.16°C/W MAX
JC
JC
0.05
0.1
0.07
0.05
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.01
t
1
1
t
2
T
- T = P θ (t)
C (pk) JC
J(pk)
0.03
0.02
DUTY CYCLE, D = t /t
SINGLE PULSE
1 2
0.01
0.01
0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
t, TIME (ms)
10
20 30
50
100
200 300 500
1000
Figure 4. Thermal Response
10
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I – V
7.0
5.0
100 µs
1.0 ms
5.0 ms
C
CE
3.0
2.0
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
T = 150°C
J
dc
The data of Figure 5 is based on T
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided T
v 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
= 150_C; T
J(pk)
C
1.0
0.7
0.5
SECOND BREAKDOWN
LIMITED
BONDING WIRE LIMITED
J(pk)
0.3
0.2
THERMALLY LIMITED @ T = 25°C
C
PULSE CURVES APPLY BELOW
RATED V
CEO
0.1
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active–Region Safe Operating Area
5.0
5.0
3.0
3.0
2.0
I /I = 20
C B
I /I = 20
C B
2.0
1.0
1.0
0.7
0.5
I /I = 10
C B
0.7
0.5
I /I = 20
C B
0.3
0.2
0.3
0.2
I /I = 10
C B
T = 25°C
T = 150°C
J
J
T = 25°C
T = 150°C
J
J
I
= I
0.1
0.07
0.05
0.1
0.07
0.05
B1 B2
V
= 30 V
CC
t ′ = t - 1/8 t
s
s
f
I = I
B1 B2
10
20 30
50 70 100
200 300
500 700 1000
10
20 30
50 70 100
200 300
500 700 1000
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 6. Storage Time
Figure 7. Fall Time
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4
2N4921 thru 2N4923
1000
700
1.0
V
CE
= 1.0 V
500
I
= 0.1 A
0.25 A
0.5 A
1.0 A
C
0.8
0.6
0.4
0.2
0
300
200
T = 150°C
J
T = 25°C
J
100
70
25°C
50
-ā55°C
30
20
10
2.0 3.0 5.0
10
20 30 50 100 200 300 500 1000 2000
0.2 0.3 0.5
1.0 2.0 3.0 5.0
10 20 30 50
100 200
I , COLLECTOR CURRENT (mA)
C
I , BASE CURRENT (mA)
B
Figure 8. Current Gain
Figure 9. Collector Saturation Region
8
7
10
1.5
1.2
0.9
0.6
0.3
0
I
C
= 10 x I
V
= 30 V
CES
CE
T = 25°C
J
10
I
= 2 x I
CES
C
6
5
4
3
10
10
10
10
I
C
≈ I
CES
V
@ I /I = 10
C B
BE(sat)
V
@ V = 2.0 V
CE
BE
I
VALUES
CES
OBTAINED FROM
FIGURE 12
V
@ I /I = 10
C B
CE(sat)
0
30
60
90
120
150
2.0 3.0 5.0
10
20 30 50
100 200 300 500 1000 2000
T , JUNCTION TEMPERATURE (°C)
J
I , COLLECTOR CURRENT (mA)
C
Figure 10. Effects of Base–Emitter Resistance
Figure 11. “On” Voltage
4
3
10
+ā2.5
h
@ĂV
+Ă 1.0ĂV
+ā2.0
+ā1.5
+ā1.0
+ā0.5
0
FEĂ
CEĂ
2
T = 150°C
*APPLIES FOR I /I ≤
C B
J
10
100°C
2
1
T = 100°C to 150°C
J
10
10
10
25°C
*θ FOR V
VC
CE(sat)
-ā55°C to +100°C
-ā0.5
-ā1.0
-ā1.5
-ā2.0
-ā2.5
I
C
= I
CES
0
V
= 30 V
CE
-1
10
10
θ
FOR V
BE
VB
REVERSE
FORWARD
+ā0.2 +ā0.3
, BASE-EMITTER VOLTAGE (VOLTS)
-ā2
-ā0.2
-ā0.1
V
0
+ā0.1
+ā0.4
+ā0.5
2.03.0 5.0 10
20 30 50
100 200 300 500 1000 2000
I , COLLECTOR CURRENT (mA)
C
BE
Figure 12. Collector Cut–Off Region
Figure 13. Temperature Coefficients
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5
2N4921 thru 2N4923
PACKAGE DIMENSIONS
TO–225AA
CASE 77–09
ISSUE W
–B–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
F
C
U
Q
M
INCHES
DIM MIN MAX
MILLIMETERS
–A–
MIN
10.80
7.50
2.42
0.51
2.93
MAX
11.04
7.74
2.66
0.66
3.30
1
2 3
A
B
C
D
F
0.425
0.295
0.095
0.020
0.115
0.435
0.305
0.105
0.026
0.130
H
K
G
H
J
0.094 BSC
2.39 BSC
0.050
0.015
0.575
5
0.095
0.025
0.655
1.27
0.39
14.61
5
2.41
0.63
16.63
K
M
Q
R
S
U
V
TYP
TYP
_
_
J
V
G
0.148
0.045
0.025
0.145
0.040
0.158
0.065
0.035
0.155
---
3.76
1.15
0.64
3.69
1.02
4.01
1.65
0.88
3.93
---
R
M
M
M
B
0.25 (0.010)
A
S
D 2 PL
M
M
M
B
0.25 (0.010)
A
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6
2N4921 thru 2N4923
Notes
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7
2N4921 thru 2N4923
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2N4921/D
相关型号：
2N4921LEADFREE
Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,
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