2N4921G [ONSEMI]
Medium−Power Plastic NPN Silicon Transistors; 中等功率塑料NPN硅晶体管
| 型号： | 2N4921G |
| 厂家： | 
ONSEMI |
| 描述： | Medium−Power Plastic NPN Silicon Transistors |
| 文件： | 总6页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N4921, 2N4922, 2N4923
2N4923 is a Preferred Device
Medium−Power Plastic
NPN Silicon Transistors
These high−performance plastic devices are designed for driver
circuits, switching, and amplifier applications.
Features
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• Low Saturation Voltage − V
= 0.6 Vdc (Max) @ I = 1.0 A
C
CE(sat)
1.0 AMPERE
• Excellent Power Dissipation Due to Thermopad Construction −
P = 30 W @ T = 25_C
D
C
GENERAL PURPOSE
POWER TRANSISTORS
40−80 VOLTS, 30 WATTS
• Excellent Safe Operating Area
• Gain Specified to I = 1.0 A
C
• Complement to PNP 2N4918, 2N4919, 2N4920
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
2N4921
2N4922
2N4923
V
40
60
80
Vdc
CEO
TO−225
CASE 77
STYLE 1
Collector−Emitter Voltage
Emitter Base Voltage
2N4921
2N4922
2N4923
V
40
60
80
Vdc
CB
EB
3
2
1
V
5.0
Vdc
Adc
MARKING DIAGRAM
Collector Current − Continuous (Note 1)
I
1.0
3.0
C
Base Current − Continuous
I
1.0
Adc
B
1
Total Power Dissipation @ T = 25_C
P
30
0.24
W
C
D
YWW
2
N492xG
Derate above 25_C
mW/_C
_C
Operating and Storage Junction
Temperature Range
T , T
J
–65 to +150
stg
THERMAL CHARACTERISTICS (Note 2)
Y
= Year
Characteristic
Symbol
Max
Unit
WW
= Work Week
Thermal Resistance, Junction−to−Case
q
4.16
_C/W
JC
2N492x = Device Code
x = 1, 2, or 3
G
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
= Pb−Free Package
ORDERING INFORMATION
1. The 1.0 A maximum I value is based upon JEDEC current gain requirements.
C
Device
Package
Shipping
The 3.0 A maximum value is based upon actual current handling capability of
the device (see Figures 5 and 6).
2. Recommend use of thermal compound for lowest thermal resistance.
2N4921
TO−225
500 Units / Box
500 Units / Box
2N4921G
TO−225
(Pb−Free)
*Indicates JEDEC Registered Data.
2N4922
TO−225
500 Units / Box
500 Units / Box
2N4922G
TO−225
(Pb−Free)
2N4923
TO−225
500 Units / Box
500 Units / Box
2N4923G
TO−225
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
January, 2006 − Rev. 11
2N4921/D
2N4921, 2N4922, 2N4923
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
V
Vdc
CEO(sus)
(I = 0.1 Adc, I = 0)
2N4921
2N4922
2N4923
C
B
40
60
80
−
−
−
Collector Cutoff Current
(V = 20 Vdc, I = 0)
I
mAdc
mAdc
CEO
2N4921
2N4922
2N4923
CE
B
−
−
−
0.5
0.5
0.5
(V = 30 Vdc, I = 0)
CE
B
(V = 40 Vdc, I = 0)
CE
B
Collector Cutoff Current
I
CEX
(V = Rated V
(V = Rated V
CE
, V
CEO
, V
CEO
= 1.5 Vdc)
= 1.5 Vdc, T = 125_C
CE
EB(off)
EB(off)
−
−
0.1
0.5
C
Collector Cutoff Current
(V = Rated V , I = 0)
I
I
mAdc
mAdc
CBO
−
−
0.1
1.0
CB
CB
E
Emitter Cutoff Current
(V = 5.0 Vdc, I = 0)
EBO
EB
C
ON CHARACTERISTICS
DC Current Gain (Note 3)
h
FE
−
(I = 50 mAdc, V = 1.0 Vdc)
C
CE
40
30
10
−
150
−
(I = 500 mAdc, V = 1.0 Vdc)
C
CE
(I = 1.0 Adc, V = 1.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage (Note 3)
(I = 1.0 Adc, I = 0.1 Adc)
V
V
Vdc
Vdc
Vdc
CE(sat)
−
−
−
0.6
1.3
1.3
C
B
Base−Emitter Saturation Voltage (Note 3)
(I = 1.0 Adc, I = 0.1 Adc)
BE(sat)
C
B
Base−Emitter On Voltage (Note 3)
(I = 1.0 Adc, V = 1.0 Vdc)
V
BE(on)
C
CE
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
MHz
pF
−
T
(I = 250 mAdc, V = 10 Vdc, f = 1.0 MHz)
3.0
−
−
100
−
C
CE
Output Capacitance
C
ob
(V = 10 Vdc, I = 0, f = 100 kHz)
CB
E
Small−Signal Current Gain
(I = 250 mAdc, V = 10 Vdc, f = 1.0 kHz)
h
fe
25
C
CE
3. Pulse Test: PW ≈ 300 ms, Duty Cycle ≈ 2.0%.
*Indicates JEDEC Registered Data.
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2
2N4921, 2N4922, 2N4923
40
30
20
10
0
25
50
75
100
125
150
T , CASE TEMPERATURE (°C)
C
Figure 1. Power Derating
Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.
APPROX
+11 V
TURN−ON PULSE
t
1
V
CC
R
V
in
C
V
in
R
B
V
BE(off)
C ꢁ<<ꢁC
jd
eb
t
3
−ꢂ4.0 V
APPROX
+11 V
SCOPE
t ≤ 15 ns
1
100 < t ≤ 500 ms
t ≤ 15 ns
3
2
V
in
APPROX 9.0 V
DUTY CYCLE ≈ 2.0%
t
2
R
and R varied to
C
B
TURN−OFF PULSE
obtain desired
current levels
Figure 2. Switching Time Equivalent Circuit
5.0
V = 30 V
CC
I /I = 20
I /I = 10, UNLESS NOTED
C B
3.0
2.0
C B
T = 25°C
J
T = 150°C
J
V
= 60 V
CC
1.0
0.7
0.5
t
r
V
= 30 V
CC
0.3
0.2
t
d
V
V
= 60 V
CC
= 2.0 V
BE(off)
0.1
0.07
0.05
V
V
= 30 V
= 0
CC
BE(off)
10
20 30
50 70 100
200 300
500 700 1000
I , COLLECTOR CURRENT (mA)
C
Figure 3. Turn−On Time
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3
2N4921, 2N4922, 2N4923
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
P
0.1
(pk)
q
q
(t) = r(t) q
JC
JC
= 4.16°C/W MAX
JC
0.05
0.1
0.07
0.05
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.01
t
1
1
t
2
T
− T = P q (t)
C (pk) JC
J(pk)
0.03
0.02
DUTY CYCLE, D = t /t
SINGLE PULSE
1 2
0.01
0.01
0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
t, TIME (ms)
10
20 30
50
100
200 300 500
1000
Figure 4. Thermal Response
10
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I − V
7.0
5.0
100 ms
1.0 ms
5.0 ms
C
CE
3.0
2.0
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
T = 150°C
J
dc
The data of Figure 5 is based on T
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
= 150_C; T
J(pk)
C
1.0
0.7
0.5
SECOND BREAKDOWN
LIMITED
BONDING WIRE LIMITED
T
v 150_C. At high case temperatures, thermal
J(pk)
0.3
0.2
limitations will reduce the power that can be handled to
values less than the limitations imposed by second
breakdown.
THERMALLY LIMITED @ T = 25°C
C
PULSE CURVES APPLY BELOW
RATED V
CEO
0.1
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
CE
Figure 5. Active−Region Safe Operating Area
5.0
5.0
3.0
3.0
2.0
I /I = 20
C B
I /I = 20
C B
2.0
1.0
1.0
0.7
0.5
I /I = 10
C B
0.7
0.5
I /I = 20
C B
0.3
0.2
0.3
0.2
I /I = 10
C B
T = 25°C
J
T = 25°C
J
T = 150°C
J
T = 150°C
J
I = I
B1 B2
0.1
0.07
0.05
0.1
0.07
0.05
V
= 30 V
CC
t ′ = t − 1/8 t
s
s
f
I = I
B1 B2
10
20 30
50 70 100
200 300
500 700 1000
10
20 30
50 70 100
200 300
500 700 1000
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 6. Storage Time
Figure 7. Fall Time
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4
−
−
0.2
0
+ꢂ0.1
+ꢂ0.4
+ꢂ0.5
2N4921, 2N4922, 2N4923
1000
700
1.0
V
= 1.0 V
CE
500
I = 0.1 A
C
0.25 A
0.5 A
1.0 A
0.8
0.6
0.4
0.2
0
300
200
T = 150°C
J
T = 25°C
J
100
70
25°C
50
−ꢂ55°C
30
20
10
2.0 3.0 5.0
10
20 30 50 100 200 300 500 1000 2000
0.2 0.3 0.5
1.0 2.0 3.0 5.0
10 20 30 50
100 200
I , COLLECTOR CURRENT (mA)
C
I , BASE CURRENT (mA)
B
Figure 8. Current Gain
Figure 9. Collector Saturation Region
8
7
10
10
1.5
1.2
0.9
0.6
0.3
0
I = 10 x I
C
V
= 30 V
CE
CES
T = 25°C
J
I = 2 x I
C
CES
6
5
4
3
10
10
10
10
I
C
≈ I
CES
V
@ I /I = 10
C B
BE(sat)
V
@ V = 2.0 V
CE
BE
I
VALUES
CES
OBTAINED FROM
FIGURE 12
V
@ I /I = 10
C B
CE(sat)
0
30
60
90
120
150
2.0 3.0 5.0
10
20 30 50
100 200 300 500 1000 2000
T , JUNCTION TEMPERATURE (°C)
J
I , COLLECTOR CURRENT (mA)
C
Figure 10. Effects of Base−Emitter Resistance
Figure 11. “On” Voltage
4
3
10
10
+ꢂ2.5
h
@ꢁV
+ꢁ 1.0ꢁV
+ꢂ2.0
+ꢂ1.5
+ꢂ1.0
+ꢂ0.5
0
FEꢁ
CEꢁ
2
T = 150°C
*APPLIES FOR I /I ≤
C B
J
100°C
2
1
0
T = 100°C to 150°C
J
10
10
10
25°C
*q FOR V
VC
CE(sat)
−ꢂ55°C to +100°C
−ꢂ0.5
−ꢂ1.0
−ꢂ1.5
−ꢂ2.0
−ꢂ2.5
I = I
C
CES
V
= 30 V
CE
−1
10
10
q
FOR V
BE
VB
REVERSE
0.1
FORWARD
+ꢂ0.2 +ꢂ0.3
ꢂ 2
2.03.0 5.0 10
20 30 50
100 200 300 500 1000 2000
V
, BASE−EMITTER VOLTAGE (VOLTS)
I , COLLECTOR CURRENT (mA)
C
BE
Figure 12. Collector Cut−Off Region
Figure 13. Temperature Coefficients
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5
2N4921, 2N4922, 2N4923
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
077−09.
−B−
F
C
U
Q
M
−A−
INCHES
DIM MIN MAX
MILLIMETERS
1
2 3
MIN
10.80
7.50
2.42
0.51
2.93
MAX
11.04
7.74
2.66
0.66
3.30
A
B
C
D
F
0.425
0.295
0.095
0.020
0.115
0.435
0.305
0.105
0.026
0.130
H
K
G
H
J
0.094 BSC
2.39 BSC
0.050
0.015
0.575
5
0.095
0.025
0.655
1.27
0.39
14.61
5
2.41
0.63
16.63
J
K
M
Q
R
S
U
V
V
TYP
TYP
_
_
G
R
0.148
0.045
0.025
0.145
0.040
0.158
0.065
0.035
0.155
−−−
3.76
1.15
0.64
3.69
1.02
4.01
1.65
0.88
3.93
−−−
M
M
M
B
0.25 (0.010)
A
S
D 2 PL
M
M
M
0.25 (0.010)
A
B
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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2N4921/D
相关型号：
2N4921LEADFREE
Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,
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