2N4922 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管型号: | 2N4922 |
厂家: | INCHANGE SEMICONDUCTOR COMPANY LIMITED |
描述: | Silicon NPN Power Transistors |
文件: | 总3页 (文件大小:118K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N4921 2N4922 2N4923
DESCRIPTION
·
·With TO-126 package
·Complement to type 2N4918/4919/4920
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For driver circuits ,switching ,and
amplifier applications
PINNING
PIN
1
DESCRIPTION
Emitter
Collector;connected to
mounting base
2
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
2N4921
2N4922
2N4923
2N4921
2N4922
2N4923
40
VCBO
Collector-base voltage
Open emitter
V
60
80
40
VCEO
Collector-emitter voltage
Open base
V
60
80
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current
Open collector
5
V
A
1
Collector current-Peak
Base current
3
1
A
A
PD
Tj
Total power dissipation
Junction temperature
Storage temperature
TC=25℃
30
W
℃
℃
150
Tstg
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance junction to case
VALUE
UNIT
Rth j-c
4.16
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N4921 2N4922 2N4923
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
40
TYP.
MAX
UNIT
2N4921
2N4922
2N4923
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=0.1A; IB=0
V
60
80
VCEsat
VBEsat
VBE
Collector-emitter saturation voltage IC=1.0A ;IB=0.1A
0.6
1.3
1.3
V
V
V
Base-emitter saturation voltage
Base-emitter on voltage
IC=1.0A ;IB=0.1A
IC=1A ; VCE=1V
VCE=20V; IB=0
VCE=30V; IB=0
2N4921
ICEO
Collector cut-off current
0.5
0.1
mA
2N4922
2N4923
V
CE=40V; IB=0
ICBO
ICEX
IEBO
hFE-1
hFE-2
hFE-3
fT
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
VCB= Rated VCBO ;IE=0
mA
mA
mA
VCE= Rated VCEO; VBE(off)=1.5V
TC=125℃
0.1
0.5
VEB=5V; IC=0
1.0
IC=50mA ; VCE=1V
IC=500mA ; VCE=1V
IC=1A ; VCE=1V
40
30
10
3.0
DC current gain
150
DC current gain
Transition frequency
Output capacitance
IC=250mA ; VCE=10V;f=1MHz
f=100kHz ; VCB=10V;IE=0
MHz
pF
COB
100
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N4921 2N4922 2N4923
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
相关型号:
2N4924LEADFREE
Small Signal Bipolar Transistor, 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
CENTRAL
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