2N4923 [ONSEMI]
1 AMPERE GENERAL PURPOSE POWER TRANSISTORS 30 WATTS; 1安培通用功率晶体管30瓦
| 型号： | 2N4923 |
| 厂家： | 
ONSEMI |
| 描述： | 1 AMPERE GENERAL PURPOSE POWER TRANSISTORS 30 WATTS |
| 文件： | 总8页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductor)
2N4921
thru
Medium-Power Plastic NPN
Silicon Transistors
*
2N4923
. . . designed for driver circuits, switching, and amplifier
applications. These high–performance plastic devices feature:
*ON Semiconductor Preferred Device
1 AMPERE
GENERAL–PURPOSE
POWER TRANSISTORS
40–80 VOLTS
• Low Saturation Voltage —
V
= 0.6 Vdc (Max) @ I = 1.0 Amp
CE(sat)
• Excellent Power Dissipation Due to Thermopad Construction —
C
P
= 30 W @ T = 25_C
D
C
30 WATTS
• Excellent Safe Operating Area
• Gain Specified to I = 1.0 Amp
C
• Complement to PNP 2N4918, 2N4919, 2N4920
*MAXIMUM RATINGS
STYLE 1:
Rating
Symbol 2N4921 2N4922 2N4923
Unit
Vdc
Vdc
Vdc
Adc
PIN 1. EMITTER
2. COLLECTOR
3. BASE
3
2
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
40
40
60
60
80
80
CEO
1
V
CB
EB
CASE 77–09
TO–225AA TYPE
V
5.0
Collector Current — Continuous (1)
I
C
1.0
3.0
Base Current — Continuous
I
B
1.0
Adc
Total Power Dissipation @ T = 25_C
P
30
0.24
Watts
W/_C
_C
C
D
Derate above 25_C
Operating & Storage Junction
Temperature Range
T , T
J stg
–65 to +150
THERMAL CHARACTERISTICS (2)
Characteristic
Symbol
Max
4.16
Unit
Thermal Resistance, Junction to Case
θ
_C/W
JC
(1) The 1.0 Amp maximum I value is based upon JEDEC current gain requirements.
C
The 3.0 Amp maximum value is based upon actual current handling capability of the
device (see Figures 5 and 6).
(2) Recommend use of thermal compound for lowest thermal resistance.
*Indicates JEDEC Registered Data.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
April, 2002 – Rev. 10
2N4921/D
2N4921 thru 2N4923
40
30
20
10
0
25
50
75
100
125
150
T , CASE TEMPERATURE (°C)
C
Figure 1. Power Derating
Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.
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2
2N4921 thru 2N4923
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (3)
(I = 0.1 Adc, I = 0)
V
Vdc
CEO(sus)
2N4921
2N4922
2N4923
40
60
80
—
—
—
C
B
Collector Cutoff Current
I
mAdc
mAdc
CEO
(V
CE
(V
CE
(V
CE
= 20 Vdc, I = 0)
2N4921
2N4922
2N4923
—
—
—
0.5
0.5
0.5
B
= 30 Vdc, I = 0)
B
= 40 Vdc, I = 0)
B
Collector Cutoff Current
I
CEX
(V
CE
(V
CE
= Rated V
= Rated V
, V
= 1.5 Vdc)
= 1.5 Vdc, T = 125_C
—
—
0.1
0.5
CEO EB(off)
, V
CEO EB(off)
C
Collector Cutoff Current
(V = Rated V , I = 0)
I
—
0.1
mAdc
mAdc
CBO
CB CB
E
Emitter Cutoff Current
(V = 5.0 Vdc, I = 0)
I
EBO
—
1.0
EB
C
ON CHARACTERISTICS
DC Current Gain (3)
h
FE
—
(I = 50 mAdc, V
= 1.0 Vdc)
= 1.0 Vdc)
CE
= 1.0 Vdc)
40
30
10
—
150
—
C
CE
(I = 500 mAdc, V
C
(I = 1.0 Adc, V
C
CE
Collector–Emitter Saturation Voltage (3)
V
—
—
—
0.6
1.3
1.3
Vdc
Vdc
Vdc
CE(sat)
(I = 1.0 Adc, I = 0.1 Adc)
C
B
Base–Emitter Saturation Voltage (3)
(I = 1.0 Adc, I = 0.1 Adc)
V
BE(sat)
C
B
Base–Emitter On Voltage (3)
(I = 1.0 Adc, V = 1.0 Vdc)
V
BE(on)
C
CE
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product (I = 250 mAdc, V
= 10 Vdc, f = 1.0 MHz)
f
T
3.0
—
—
100
—
MHz
pF
C
CE
Output Capacitance (V
= 10 Vdc, I = 0, f = 100 kHz)
C
CB
E
ob
Small–Signal Current Gain (I = 250 mAdc, V
= 10 Vdc, f = 1.0 kHz)
h
fe
25
—
C
CE
(3) Pulse Test: PW ≈ 300 µs, Duty Cycle ≈ 2.0%.
*Indicates JEDEC Registered Data.
APPROX
+11 V
TURN-ON PULSE
5.0
V
= 30 V
I /I = 10, UNLESS NOTED
C B
CC
I /I = 20
t
1
V
CC
3.0
2.0
T = 25°C
C B
R
C
J
V
in
T = 150°C
J
V
CC
= 60 V
V
in
R
B
V
1.0
BE(off)
C Ă<<ĂC
jd
eb
0.7
0.5
t
t
r
3
-ā4.0 V
t ≤ 15 ns
V
CC
= 30 V
APPROX
+11 V
SCOPE
0.3
0.2
t
d
1
V
= 60 V
CC
100 < t ≤ 500 µs
2
V
= 2.0 V
BE(off)
V
in
t ≤ 15 ns
3
0.1
0.07
0.05
V
= 30 V
= 0
BE(off)
APPROX 9.0 V
CC
DUTY CYCLE ≈ 2.0%
V
t
2
TURN-OFF PULSE
R
and R varied to
C
B
10
20 30
50 70 100
200 300
500 700 1000
obtain desired
current levels
I , COLLECTOR CURRENT (mA)
C
Figure 2. Switching Time Equivalent Circuit
Figure 3. Turn–On Time
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3
2N4921 thru 2N4923
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
P
(pk)
0.1
θ
θ
(t) = r(t) θ
JC
JC
JC
= 4.16°C/W MAX
0.05
0.1
0.07
0.05
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
0.01
t
1
READ TIME AT t
1
t
2
T
- T = P
θ
(pk) JC
(t)
J(pk)
C
0.03
0.02
DUTY CYCLE, D = t /t
1 2
SINGLE PULSE
0.01
0.01
0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
t, TIME (ms)
10
20 30
50
100
200 300 500
1000
Figure 4. Thermal Response
10
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I – V
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
7.0
5.0
100 µs
1.0 ms
5.0 ms
C
CE
3.0
2.0
T = 150°C
J
dc
The data of Figure 5 is based on T
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided T
v 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
= 150_C; T
J(pk)
C
1.0
0.7
0.5
SECOND BREAKDOWN
LIMITED
BONDING WIRE LIMITED
J(pk)
0.3
0.2
THERMALLY LIMITED @ T = 25°C
PULSE CURVES APPLY BELOW
RATED V
CEO
C
0.1
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
V , COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
Figure 5. Active–Region Safe Operating Area
5.0
5.0
3.0
3.0
2.0
I /I = 20
C B
I /I = 20
C B
2.0
1.0
1.0
0.7
0.5
I /I = 10
C B
0.7
0.5
I /I = 20
C B
0.3
0.2
0.3
0.2
I /I = 10
C B
T = 25°C
T = 150°C
J
J
T = 25°C
T = 150°C
J
J
I = I
B1 B2
0.1
0.07
0.05
0.1
0.07
0.05
V
I
= 30 V
CC
= I
t ′ = t - 1/8 t
s
s
f
B1 B2
10
20 30
50 70 100
200 300
500 700 1000
10
20 30
50 70 100
200 300
500 700 1000
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 6. Storage Time
Figure 7. Fall Time
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4
2N4921 thru 2N4923
1000
700
1.0
V
CE
= 1.0 V
500
I
= 0.1 A
0.25 A
0.5 A
1.0 A
C
0.8
0.6
0.4
0.2
0
300
200
T = 150°C
J
T = 25°C
J
100
70
25°C
50
-ā55°C
30
20
10
2.0 3.0 5.0
10
20 30 50 100 200 300 500 1000 2000
0.2 0.3 0.5
1.0 2.0 3.0 5.0
10 20 30 50
100 200
I , COLLECTOR CURRENT (mA)
C
I , BASE CURRENT (mA)
B
Figure 8. Current Gain
Figure 9. Collector Saturation Region
8
7
10
1.5
1.2
0.9
0.6
0.3
0
I
C
= 10 x I
V
= 30 V
CES
CE
T = 25°C
J
10
I
= 2 x I
CES
C
6
10
5
10
4
10
3
10
I
C
≈ I
CES
V
@ I /I = 10
C B
BE(sat)
V
@ V = 2.0 V
CE
BE
I
VALUES
CES
OBTAINED FROM
FIGURE 12
V
@ I /I = 10
C B
CE(sat)
0
30
60
90
120
150
2.0 3.0 5.0
10
20 30 50
100 200 300 500 1000 2000
T , JUNCTION TEMPERATURE (°C)
J
I , COLLECTOR CURRENT (mA)
C
Figure 10. Effects of Base–Emitter Resistance
Figure 11. “On” Voltage
4
3
10
+ā2.5
h
@ĂV
+Ă 1.0ĂV
+ā2.0
+ā1.5
+ā1.0
+ā0.5
0
FEĂ
CEĂ
2
T = 150°C
*APPLIES FOR I /I
≤
J
C B
10
100°C
2
10
1
10
0
10
T = 100°C to 150°C
J
25°C
*θ FOR V
VC
CE(sat)
-ā55°C to +100°C
-ā0.5
-ā1.0
-ā1.5
-ā2.0
-ā2.5
I
C
= I
CES
V
= 30 V
CE
-1
10
10
θ
FOR V
BE
VB
REVERSE
FORWARD
+ā0.2 +ā0.3
, BASE-EMITTER VOLTAGE (VOLTS)
-ā2
-ā0.2
-ā0.1
V
0
+ā0.1
+ā0.4
+ā0.5
2.03.0 5.0 10
20 30 50
100 200 300 500 1000 2000
I , COLLECTOR CURRENT (mA)
C
BE
Figure 12. Collector Cut–Off Region
Figure 13. Temperature Coefficients
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5
2N4921 thru 2N4923
PACKAGE DIMENSIONS
CASE 77–08
TO–225AA TYPE
ISSUE V
–B–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
F
C
U
Q
M
INCHES
DIM MIN MAX
MILLIMETERS
–A–
MIN
10.80
7.50
2.42
0.51
2.93
MAX
11.04
7.74
2.66
0.66
3.30
1
2 3
A
B
C
D
F
0.425
0.295
0.095
0.020
0.115
0.435
0.305
0.105
0.026
0.130
H
K
G
H
J
0.094 BSC
2.39 BSC
0.050
0.015
0.575
5
0.095
0.025
0.655
1.27
0.39
14.61
5
2.41
0.63
16.63
K
M
Q
R
S
U
V
TYP
TYP
_
_
J
V
G
0.148
0.045
0.025
0.145
0.040
0.158
0.055
0.035
0.155
---
3.76
1.15
0.64
3.69
1.02
4.01
1.39
0.88
3.93
---
R
M
M
M
B
0.25 (0.010)
A
S
D 2 PL
M
M
M
B
0.25 (0.010)
A
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
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6
2N4921 thru 2N4923
Notes
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7
2N4921 thru 2N4923
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2N4921/D
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