2N4923 [JMNIC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
2N4923
型号: 2N4923
厂家: QUANZHOU JINMEI ELECTRONIC CO.,LTD.    QUANZHOU JINMEI ELECTRONIC CO.,LTD.
描述:

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管 局域网
文件: 总3页 (文件大小:44K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Product Specification  
www.jmnic.com  
Silicon NPN Power Transistors  
2N4921 2N4922 2N4923  
DESCRIPTION  
·
·With TO-126 package  
·Complement to type 2N4918,2N4919 2N4920  
·Excellent safe operating area  
·Low collector-emitter saturation voltage  
APPLICATIONS  
·For driver circuits ,switching ,and  
amplifier applications  
PINNING  
PIN  
DESCRIPTION  
Emitter  
1
Collector;connected to  
mounting base  
2
3
Base  
Absolute maximum ratings(Ta=25)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
2N4921  
2N4922  
2N4923  
2N4921  
2N4922  
2N4923  
40  
VCBO  
Collector-base voltage  
Open emitter  
V
60  
80  
40  
VCEO  
Collector-emitter voltage  
Open base  
V
60  
80  
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Open collector  
5
V
A
1
Collector current-Peak  
Base current  
3
1
A
A
PD  
Tj  
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25  
30  
W
150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Rth j-c  
Thermal resistance junction to case  
4.16  
/W  
JMnic  
Product Specification  
www.jmnic.com  
Silicon NPN Power Transistors  
2N4921 2N4922 2N4923  
CHARACTERISTICS  
Tj=25unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
40  
TYP.  
MAX  
UNIT  
2N4921  
2N4922  
2N4923  
Collector-emitter  
sustaining voltage  
VCEO  
IC=0.1A; IB=0  
V
60  
80  
VCEsat  
VBEsat  
VBE  
Collector-emitter saturation voltage  
Emitter-base saturation voltage  
Emitter-base on voltage  
2N4921  
IC=1.0A ;IB=0.1A  
IC=1.0A ;IB=0.1A  
IC=1A ; VCE=1V  
VCE=20V; IB=0  
VCE=30V; IB=0  
0.6  
1.3  
1.3  
V
V
V
ICEO  
Collector cut-off current  
0.5  
mA  
2N4922  
2N4923  
V
CE=40V; IB=0  
ICBO  
ICEX  
IEBO  
hFE-1  
hFE-2  
hFE-3  
fT  
Collector cut-off current  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
VCB= Rated VCBO ;IE=0  
0.1  
mA  
mA  
mA  
VCE= Rated VCEO; VBE(off)=1.5V  
TC=125℃  
0.1  
0.5  
VEB=5V; IC=0  
1.0  
IC=50mA ; VCE=1V  
IC=500mA ; VCE=1V  
IC=1A ; VCE=1V  
40  
30  
10  
3.0  
DC current gain  
150  
DC current gain  
Transition frequency  
Output capacitance  
IC=250mA ; VCE=10V;f=1MHz  
f=100kHz ; VCB=10V;IE=0  
MHz  
pF  
COB  
100  
JMnic  
Product Specification  
www.jmnic.com  
Silicon NPN Power Transistors  
2N4921 2N4922 2N4923  
PACKAGE OUTLINE  
Fig.2 Outline dimensions  
JMnic  

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