ZXMN6A08E6Q_15 [DIODES]
60V N-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | ZXMN6A08E6Q_15 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 60V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总8页 (文件大小：497K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMN6A08E6Q
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
ID
V(BR)DSS
RDS(ON)
Fast Switching Speed
TA = +25°C
Low Gate Drive
3.5A
2.5A
80mΩ @ VGS=10V
60V
Low Threshold
150mΩ @ VGS=4.5V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Available
Description
This MOSFET is designed to minimize the on-state resistance and yet
maintain superior switching performance, making it ideal for high
efficiency power management applications.
Mechanical Data
Case: SOT26
Applications
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Annealed over Copper Leadframe;
DC-DC Converters
Power Management Functions
Disconnect Switches
Motor Control
e3
Solderable per MIL-STD-202, Method 208
Weight: 0.018 grams (Approximate)
SOT26
D
G
S
Equivalent Circuit
Top View
Pin Out - Top View
Ordering Information (Note 4 & 5)
Part Number
ZXMN6A08E6QTA
Compliance
Automotive
Case
SOT26
Quantity per reel
3,000
Note:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT26
6A8 = Product Type Marking Code
YM = Date Code Marking
Y or Y
̅ = Year (ex: C = 2015)
6A8
M or M = Month (ex: 9 = September)
Date Code Key
Year
2015
2016
2017
2018
2019
2020
2021
2022
Code
C
D
E
F
G
H
I
J
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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© Diodes Incorporated
ZXMN6A08E6Q
Document Number DS36690 Rev. 3 - 2
ZXMN6A08E6Q
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDSS
Value
60
Unit
V
V
VGS
20
3.5
2.8
2.8
16
(Note 7)
Continuous Drain Current
Pulsed Drain Current
A
VGS = 10V
VGS= 10V
TA = +70°C (Note 7)
(Note 6)
ID
(Note 8)
A
A
A
IDM
IS
Continuous Source Current (Body diode)
Pulsed Source Current (Body diode)
(Note 7)
2.6
16
(Note 8)
ISM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
1.1
8.8
(Note 6)
(Note 7)
Power Dissipation
Linear Derating Factor
W
mW/°C
PD
1.7
13.6
(Note 6)
(Note 7)
113
73
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
°C/W
°C
RθJA
-55 to +150
TJ, TSTG
Notes:
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as Note 6, except the device is measured at t 10 seconds.
8. Same as Note 6, except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
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ZXMN6A08E6Q
Document Number DS36690 Rev. 3 - 2
ZXMN6A08E6Q
Thermal Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
25mm x 25mm
1oz FR4
RDS(on)
Limited
1
DC
1s
100ms
10ms
100m
10m
1ms
Single Pulse
Tamb=25°C
100µs
10
0
20
40
60
80 100 120 140 160
100m
1
VDS Drain-Source Voltage (V)
Temperature (°C)
Derating Curve
Safe Operating Area
120
100
80
Tamb=25°C
Single Pulse
Tamb=25°C
100
10
1
D=0.5
D=0.2
60
40
Single Pulse
D=0.05
D=0.1
20
100µ 1m 10m 100m
1
10
100
1k
100µ 1m 10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
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© Diodes Incorporated
ZXMN6A08E6Q
Document Number DS36690 Rev. 3 - 2
ZXMN6A08E6Q
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
60
V
BVDSS
IDSS
0.5
ID = 250µA, VGS = 0V
µA
nA
VDS = 60V, VGS = 0V
IGSS
100
VGS = 20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
1
V
VGS(th)
0.067
0.1
0.08
0.15
ID = 250µA, VDS = VGS
VGS = 10V, ID = 4.8A
Static Drain-Source On-Resistance (Note 9)
Ω
RDS(ON)
VGS = 4.5V, ID = 4.2A
VDS = 15V, ID = 4.8A
Forward Transconductance (Notes 9 & 10)
Diode Forward Voltage (Note 9)
Reverse Recovery Time (Note 10)
Reverse Recovery Charge (Note 10)
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
6.6
S
V
gfs
VSD
trr
0.88
19.2
30.3
1.2
IS = 4A, VGS = 0V, TJ = +25°C
ns
nC
IF = 1.4A, di/dt = 100A/µs,
TJ = +25°C
Qrr
459
44.2
24.1
3.7
pF
pF
pF
nC
nC
nC
nC
ns
Ciss
Coss
Crss
Qg
VDS = 40V, VGS = 0V
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 11)
Total Gate Charge (Note 11)
Gate-Source Charge (Note 11)
Gate-Drain Charge (Note 11)
Turn-On Delay Time (Note 11)
Turn-On Rise Time (Note 11)
Turn-Off Delay Time (Note 11)
Turn-Off Fall Time (Note 11)
VGS = 4.5V
5.8
Qg
VDS = 30V
ID = 1.4A
1.4
Qgs
Qgd
tD(on)
tr
VGS = 10V
1.9
2.6
2.1
ns
VDD = 30V, VGS = 10V
ID = 1.5A, RG 6Ω
12.3
4.6
ns
tD(off)
tf
ns
Notes:
9. Measured under pulsed conditions. Pulse width 300µs; duty cycle 2%.
10. For design aid only, not subject to production testing.
11. Switching characteristics are independent of operating junction temperatures.
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© Diodes Incorporated
ZXMN6A08E6Q
Document Number DS36690 Rev. 3 - 2
ZXMN6A08E6Q
Typical Characteristics
10V
10V
5V
T = 25°C
T = 150°C
5V
10
1
10
1
4.5V
4V
4V
3.5V
3V
3.5V
2.5V
VGS
0.1
0.01
3V
2V
VGS
0.1
0.1
1
10
0.1
1
10
VDS Drain-Source Voltage (V)
VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VGS = 10V
ID = 4.8A
VDS = 10V
10
1
T = 150°C
RDS(on)
T = 25°C
VGS(th)
0.1
VGS = VDS
ID = 250uA
0.01
2
3
4
5
-50
0
50
100
150
VGS Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Normalised Curves v Temperature
Typical Transfer Characteristics
3V
4V
3.5V
4.5V
10
1
T = 150°C
VGS
1
T = 25°C
T = 25°C
5V
0.1
0.1
7V
10V
VGS = 0V
0.01
0.2
0.1
1
10
0.4
0.6
0.8
1.0
1.2
ID Drain Current (A)
VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance v Drain Current
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ZXMN6A08E6Q
Document Number DS36690 Rev. 3 - 2
ZXMN6A08E6Q
Typical Characteristics (cont.)
10
8
VGS = 0V
f = 1MHz
600
6
400
CISS
4
COSS
CRSS
200
VDS = 15V
ID = 1.4A
2
0
0
1
10
0
1
2
3
4
5
6
Q - Charge (nC)
VDS - Drain - Source Voltage (V)
Gate-Source Voltage v Gate Charge
Capacitance v Drain-Source Voltage
Test Circuits
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© Diodes Incorporated
ZXMN6A08E6Q
Document Number DS36690 Rev. 3 - 2
ZXMN6A08E6Q
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
D
SOT26
Dim Min Max
A1 0.013 0.10
A2 1.00 1.30
A3 0.70 0.80
Typ
0.05
1.10
0.75
0.38
0.15
3.00
0.95
1.90
2.80
1.60
0.40
8°
E1
E
b
c
D
e
e1
E
0.35 0.50
0.10 0.20
2.90 3.10
-
-
-
-
b
a1
e1
2.70 3.00
E1 1.50 1.70
L
a
a1
0.35 0.55
-
-
-
-
A2
7°
A1
A3
All Dimensions in mm
Seating Plane
a
L
e
c
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C1
Dimensions Value (in mm)
C
C1
G
X
Y
2.40
0.95
1.60
0.55
0.80
3.20
Y1
G
Y
C
Y1
X
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ZXMN6A08E6Q
Document Number DS36690 Rev. 3 - 2
ZXMN6A08E6Q
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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Document Number DS36690 Rev. 3 - 2
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