ZXMN6A08E6TA [DIODES]
60V N-CHANNEL ENHANCEMENT MODE MOSFET; 60V N沟道增强型MOSFET
| 型号： | ZXMN6A08E6TA |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 60V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总8页 (文件大小：651K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A Product Line of
Diodes Incorporated
ZXMN6A08E6
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
•
•
•
•
•
•
Low on-resistance
ID
V(BR)DSS
RDS(on)
Fast switching speed
TA = 25°C
Low gate drive
3.5A
2.5A
80mΩ @ VGS=10V
Low threshold
100V
“Green” component and RoHS compliant (Note 1)
Qualified to AEC-Q101 Standards for High Reliability
150mΩ @ VGS=4.5V
Description and Applications
Mechanical Data
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
•
•
Case: SOT23-6
Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
•
•
Moisture Sensitivity: Level 1 per J-STD-020
•
•
•
•
DC-DC Converters
Power management functions
Disconnect switches
Motor control
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
•
Weight: 0.018 grams (approximate)
SOT23-6
D
D
D
G
D
D
G
S
S
Equivalent Circuit
Top View
Pin Out - Top View
Ordering Information (Note 1)
Product
ZXMN6A08E6TA
Marking
See below
Reel size (inches)
Tape width (mm)
Quantity per reel
7
8
3,000
Notes:
1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about
Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
6A8 = Product Type Marking Code
6A8
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August 2010
© Diodes Incorporated
ZXMN6A08E6
Document Number DS33376 Rev. 5 - 2
A Product Line of
Diodes Incorporated
ZXMN6A08E6
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source voltage
Gate-Source voltage
Symbol
VDSS
Value
60
Unit
V
V
VGS
±20
3.5
2.8
2.8
16
(Note 3)
Continuous Drain current
A
VGS = 10V
GS= 10V
TA = 70°C (Note 3)
(Note 2)
(Note 4)
ID
Pulsed Drain current
A
A
A
V
IDM
IS
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 3)
2.6
16
(Note 4)
ISM
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
1.1
8.8
Unit
(Note 2)
W
mW/°C
Power dissipation
Linear derating factor
PD
1.7
(Note 3)
13.6
113
73
(Note 1)
Thermal Resistance, Junction to Ambient
(Note 3)
Operating and storage temperature range
°C/W
°C
Rθ
JA
-55 to 150
TJ, TSTG
Notes:
2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t ≤ 10 sec.
4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
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August 2010
© Diodes Incorporated
ZXMN6A08E6
Document Number DS33376 Rev. 5 - 2
A Product Line of
Diodes Incorporated
ZXMN6A08E6
Thermal Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
25mm x 25mm
1oz FR4
RDS(on)
Limited
1
DC
1s
100ms
10ms
100m
10m
1ms
Single Pulse
Tamb=25°C
100µs
10
0
20
40 60 80 100 120 140 160
100m
1
VDS Drain-Source Voltage (V)
Temperature (°C)
Derating Curve
Safe Operating Area
120
100
80
Tamb=25°C
Single Pulse
Tamb=25°C
100
10
1
D=0.5
D=0.2
60
40
Single Pulse
D=0.05
D=0.1
20
100µ 1m 10m 100m
1
10
100
1k
100µ 1m 10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
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August 2010
© Diodes Incorporated
ZXMN6A08E6
Document Number DS33376 Rev. 5 - 2
A Product Line of
Diodes Incorporated
ZXMN6A08E6
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
60
⎯
⎯
V
BVDSS
IDSS
⎯
⎯
⎯
⎯
0.5
ID = 250μA, VGS = 0V
VDS = 60V, VGS = 0V
μA
nA
IGSS
±100
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
1.0
V
VGS(th)
⎯
⎯
0.080
0.150
⎯
ID = 250μA, VDS = VGS
GS = 10V, ID = 4.8A
0.067
0.100
6.6
V
Static Drain-Source On-Resistance (Note 5)
Ω
RDS (ON)
⎯
VGS = 4.5V, ID = 4.2A
VDS = 15V, ID = 4.8A
IS = 4A, VGS = 0V, TJ = 25°C
IF = 1.4A, di/dt = 100A/μs,
TJ = 25°C
Forward Transconductance (Notes 5 & 6)
Diode Forward Voltage (Note 5)
Reverse recovery time (Note 6)
Reverse recovery charge (Note 6)
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
S
V
gfs
VSD
trr
⎯
⎯
⎯
⎯
0.88
19.2
30.3
1.2
ns
nC
⎯
⎯
Qrr
459
44.2
24.1
3.7
pF
pF
pF
nC
nC
nC
nC
ns
Ciss
Coss
Crss
Qg
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
VDS = 40V, VGS = 0V
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 7)
Total Gate Charge (Note 7)
Gate-Source Charge (Note 7)
Gate-Drain Charge (Note 7)
Turn-On Delay Time (Note 7)
Turn-On Rise Time (Note 7)
Turn-Off Delay Time (Note 7)
Turn-Off Fall Time (Note 7)
VGS = 4.5V
VDS = 30V
5.8
Qg
1.4
ID = 1.4A
Qgs
Qgd
tD(on)
tr
VGS = 10V
1.9
2.6
2.1
ns
V
DD = 30V, VGS = 10V
12.3
4.6
ns
ID = 1.5A, RG ≅ 6.0Ω
tD(off)
tf
ns
Notes:
5. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
6. For design aid only, not subject to production testing.
7. Switching characteristics are independent of operating junction temperatures.
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August 2010
© Diodes Incorporated
ZXMN6A08E6
Document Number DS33376 Rev. 5 - 2
A Product Line of
Diodes Incorporated
ZXMN6A08E6
Typical Characteristics
10V
10V
5V
T = 25°C
T = 150°C
5V
4V
10
1
10
1
4.5V
4V
3.5V
3V
3.5V
2.5V
VGS
0.1
0.01
3V
2V
VGS
0.1
0.1
1
10
0.1
1
VDS Drain-Source Voltage 1(V0 )
VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VGS = 10V
ID = 4.8A
VDS = 10V
10
1
T = 150°C
RDS(on)
T = 25°C
VGS(th)
0.1
0.01
VGS = VDS
ID = 250uA
2
3
4
5
-50
0
50
100
150
VGS Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Normalised Curves v Temperature
Typical Transfer Characteristics
3V
4V
3.5V
4.5V
10
1
T = 150°C
VGS
1
T = 25°C
T = 25°C
5V
0.1
0.1
7V
10V
VGS = 0V
0.01
0.2
0.1
1
10
0.4
0.6
0.8
1.0
1.2
ID Drain Current (A)
VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance v Drain Current
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August 2010
© Diodes Incorporated
ZXMN6A08E6
Document Number DS33376 Rev. 5 - 2
A Product Line of
Diodes Incorporated
ZXMN6A08E6
Typical Characteristics – continued
10
8
VGS = 0V
f = 1MHz
600
6
400
CISS
4
COSS
CRSS
200
VDS = 15V
ID = 1.4A
2
0
0
1
10
0
1
2
3
4
5
6
Q - Charge (nC)
VDS - Drain - Source Voltage (V)
Gate-Source Voltage v Gate Charge
Capacitance v Drain-Source Voltage
Test Circuits
Current
regulator
QG
50k
Same as
D.U.T
12V
QGS
QGD
VG
VDS
IG
D.U.T
ID
VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS
90%
RD
VGS
VDS
RG
VDD
10%
VGS
td(on)
tr
td(off)
tr
t(on)
t(on)
Switching time waveforms
Switching time test circuit
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August 2010
© Diodes Incorporated
ZXMN6A08E6
Document Number DS33376 Rev. 5 - 2
A Product Line of
Diodes Incorporated
ZXMN6A08E6
Package Outline Dimensions
Millimeters
Inches
DIM
Min
0.90
0.00
0.90
0.20
0.09
2.70
2.20
1.30
0.10
Max
1.45
0.15
1.30
0.50
0.26
3.10
3.20
1.80
0.60
Min
Max
A
A1
A2
b
0.354
0.0570
0.0059
0.0511
0.0196
0.0102
0.1220
0.1181
0.0708
0.0236
0.00
0.0354
0.0078
0.0035
0.1062
0.0866
0.0511
0.0039
C
D
E
E1
L
e
0.95 REF
1.90 REF
0.0374 REF
0.0748 REF
e1
θ
0°
30°
0°
30°
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August 2010
© Diodes Incorporated
ZXMN6A08E6
Document Number DS33376 Rev. 5 - 2
A Product Line of
Diodes Incorporated
ZXMN6A08E6
Suggested Pad Layout
0.95
0.037
1.06
0.042
2.2
0.087
mm
inches
0.65
0.026
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
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© Diodes Incorporated
ZXMN6A08E6
Document Number DS33376 Rev. 5 - 2
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