ZXMN6A08GTA [DIODES]
60V SOT223 N-channel enhancement mode MOSFET; SOT223 60V N沟道增强型MOSFET
| 型号： | ZXMN6A08GTA |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 60V SOT223 N-channel enhancement mode MOSFET |
| 文件： | 总8页 (文件大小：443K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMN6A08G
60V SOT223 N-channel enhancement mode MOSFET
Summary
V
R
(⍀)
I (A)
(BR)DSS
DS(on)
D
0.080 @ V
= 10V
5.3
2.8
GS
60
0.150 @ V
= 4.5V
GS
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
D
S
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
G
Low gate drive
SOT223 package
Applications
•
•
•
•
DC-DC converters
S
D
G
Power management functions
Disconnect switches
Motor control
D
Ordering information
Pinout - top view
Device
Reel size
(inches)
Tape width
(mm)
Quantity per
reel
ZXMN6A08GTA
ZXMN6A08GTC
7
12
12
1,000
4,000
13
Device marking
ZXMN
6A08
Issue 1 - May 2006
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ZXMN6A08G
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Drain-source voltage
V
60
V
DSS
Gate-source voltage
V
20
V
A
GS
(b)
(b)
(a)
I
5.3
Continuous drain current
@ V = 10V; T
= 25°C
= 70°C
= 25°C
D
GS
amb
amb
amb
4.2
3.8
@ V = 10V; T
GS
@ V = 10V; T
GS
(c)
I
I
20
2.1
20
2
A
A
Pulsed drain current
DM
(b)
I
S
Continuous source current (body diode)
(c)
A
Pulsed source current (body diode)
SM
(a)
P
W
D
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
= 25°C
amb
16
mW/°C
W
(b)
P
3.9
D
= 25°C
amb
31
mW/°C
°C
Operating and storage temperature range
T , T
-55 to +150
j
stg
Thermal resistance
Parameter
Symbol
Limit
Unit
(a)
R
R
62.5
°C/W
⍜JA
⍜JA
Junction to ambient
(b)
32
°C/W
Junction to ambient
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b)For a device surface mounted on FR4 PCB measured at t Յ10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction
temperature.
Issue 1 - May 2006
© Zetex Semiconductors plc 2006
2
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ZXMN6A08G
Typical characteristics
Issue 1 - May 2006
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3
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ZXMN6A08G
Electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Parameter
Static
Symbol
Min.
Typ.
Max.
Unit Conditions
Drain-source breakdown
voltage
V
60
V
I = 250A, V =0V
D GS
(BR)DSS
Zero gate voltage drain
current
I
0.5
A
V
= 60V, V =0V
GS
DSS
DS
Gate-body leakage
I
100
nA
V
V
= 20V, V =0V
DS
GSS
GS
Gate-source threshold
voltage
V
1
I = 250A, V =V
D DS GS
GS(th)
Static drain-source on-state
R
0.080
0.150
⍀
⍀
S
V
= 10V, I = 4.8A
D
DS(on)
GS
GS
DS
(*)
resistance
V
V
= 4.5V, I = 4.2A
D
(*) (‡)
g
6.6
= 15V, I = 4.8A
D
fs
Forward transconductance
(‡)
Dynamic
Input capacitance
C
C
C
459
44.2
24.1
pF
pF
pF
V
= 40V, V =0V
DS GS
iss
f=1MHz
Output capacitance
oss
rss
Reverse transfer capacitance
(†) (‡)
Switching
Turn-on delay time
Rise time
t
t
t
t
2.6
2.1
ns
ns
ns
ns
nC
V
= 30V, I = 1.5A
DD D
d(on)
R ≅6.0⍀, V = 10V
G
GS
r
Turn-off delay time
Fall time
12.3
4.6
d(off)
f
Gate charge
Q
4.0
V
= 30V, V = 5V
DS GS
g
I = 1.4A
D
Total gate charge
Gate-source charge
Gate drain charge
Q
Q
Q
5.8
1.4
1.9
nC
nC
nC
V
= 30V, V = 10V
DS GS
g
I = 1.4A
D
gs
gd
Source-drain diode
(*)
V
0.88
1.2
V
T =25°C, I = 4A,
j S
SD
Diode forward voltage
V
=0V
GS
(‡)
t
19.2
30.3
ns
Tj=25°C, I = 1.4A,
di/dt=100A/s
rr
S
Reverse recovery time
(‡)
Q
nC
rr
Reverse recovery charge
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300s; duty cycle Յ2%.
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Issue 1 - May 2006
© Zetex Semiconductors plc 2006
4
www.zetex.com
ZXMN6A08G
Typical characteristics
Issue 1 - May 2006
© Zetex Semiconductors plc 2006
5
www.zetex.com
ZXMN6A08G
Typical characteristics
Current
regulator
QG
50k
Same as
D.U.T
12V
QGS
QGD
VG
VDS
IG
D.U.T
ID
VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS
90%
RD
VGS
VDS
RG
VCC
10%
VGS
td(on)
tr
td(off)
tr
t(on)
t(on)
Switching time waveforms
Switching time test circuit
Issue 1 - May 2006
© Zetex Semiconductors plc 2006
6
www.zetex.com
ZXMN6A08G
Intentionally left blank
Issue 1 - May 2006
© Zetex Semiconductors plc 2006
7
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ZXMN6A08G
Package outline - SOT223
DIM
Millimeters
Min Max
Inches
Min
DIM
Millimeters
Min Max
2.30 BSC
4.60 BSC
Inches
Min Max
Max
0.071
0.004
0.033
0.122
0.013
0.264
A
A1
b
-
1.80
0.10
0.84
3.10
0.33
6.70
-
e
e1
E
0.0905 BSC
0.181 BSC
0.02
0.66
2.90
0.23
6.30
0.0008
0.026
0.114
0.009
0.248
6.70
7.30
0.264
0.287
b2
C
E1
L
3.30
0.90
-
3.70
0.130
0.355
-
0.146
-
-
-
-
D
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Europe
Americas
Asia Pacific
Corporate Headquarters
Zetex GmbH
Zetex Inc
Zetex (Asia Ltd)
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
Streitfeldstraße 19
D-81673 München
Germany
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
United Kingdom
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Telephone: (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
For international sales offices visit www.zetex.com/offices
Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 1 - May 2006
© Zetex Semiconductors plc 2006
8
www.zetex.com
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